Switching Diodes MA4X194 (MA194) Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 1 0.4 − 0.05 0.5 0.95 4 V 40 V + 0.1 0.16 − 0.06 40 0.1 to 0.3 0 to 0.1 VR VRRM 0.8 Unit + 0.2 Rating 1.1 − 0.1 Symbol 0.4 ± 0.2 Average forward current Single IF(AV) 100 mA Double IF(AV) 75 mA/Unit Repetitive peak forward current Single IFRM 225 mA Double IFRM 170 mA/Unit Non-repetitive peak forward surge current* Single IFSM 500 mA Double IFSM 375 mA/Unit Power dissipation PD 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.6 − 0 0.2 ■ Absolute Maximum Ratings Ta = 25°C Repetitive peak reverse voltage 2 + 0.1 3 + 0.1 0.95 + 0.2 2.9 − 0.05 1.9 ± 0.2 0.5 R • Short reverse recovery time trr • Two isolated elements contained in one package, allowing highdensity mounting Reverse voltage (DC) + 0.1 ■ Features Parameter 0.65 ± 0.15 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1F Internal Connection 4 1 3 2 Note) * : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Reverse current (DC) Conditions Min Typ Max Unit IR1 VR = 40 V 10 nA IR2 VR = 35 V, Ta = 150°C 10 µA Forward voltage (DC) VF IF = 100 mA 0.98 1.2 V Terminal capacitance Ct VR = 6 V, f = 1 MHz 1.0 2.0 pF Forward dynamic resistance r f* 1 IF = 3 mA, f = 30 MHz 1.7 2.5 Ω r f* 2 IF = 3 mA, f = 30 MHz 3.6 trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 100 Reverse recovery time*3 Note) *1 : rf measuring instrument: Nihon Koshuha Model TDC-121A *2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER *3 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 ns Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. 197 MA4X194 Switching Diodes IF V F 102 1.2 100°C 10 25°C – 20°C 1 10−1 Ta = 150°C 100°C 1 25°C 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 10−3 1.2 0 10 20 30 40 50 Reverse voltage VR (V) IR Ta f = 1 MHz Ta = 25°C Reverse current IR (nA) 6V 1 10−1 10−2 Terminal capacitance Ct (pF) 5 VR = 30 V 3 2 1 0.5 0.3 0.2 10−3 0 40 80 120 160 Ambient temperature Ta (°C) 198 0.1 0.6 10 mA 0.4 3 mA 0 10 20 30 40 Reverse voltage VR (V) 0 −40 0 40 80 120 Ambient temperature Ta (°C) Ct VR 10 10 IF = 100 mA 0.8 0.2 Forward voltage VF (V) 102 Forward voltage VF (V) 1.0 10 Ta = 150°C Reverse current IR (µA) Forward current IF (mA) 102 10−2 VF Ta IR VR 103 50 160 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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