DF N2 020 D-3 PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4330PAS 2. Features and benefits • • • • • • • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified 3. Applications • • • • • Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -30 V IC collector current - - -3 A ICM peak collector current single pulse; tp ≤ 1 ms - - -5 A RCEsat collector-emitter saturation resistance IC = -3 A; IB = -300 mA; pulsed; - 75 107 mΩ tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol 3 3 1 2 1 2 sym013 Transparent top view DFN2020D-3 (SOT1061D) 6. Ordering information Table 3. Ordering information Type number PBSS5330PAS Package Name Description Version DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm SOT1061D 7. Marking Table 4. Marking codes Type number Marking code PBSS5330PAS E2 PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -30 V VCEO collector-emitter voltage open base - -30 V VEBO emitter-base voltage open collector - -6 V IC collector current - -3 A ICM peak collector current - -5 A IB base current - -500 mA Ptot total power dissipation [1] - 600 mW [2][3] - 1.2 W [4] - 1.5 W [5][6] - 2.5 W single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] [4] [5] [6] PBSS5330PAS Product data sheet Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 2 Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor aaa-013298 3 (1) + (2) Ptot (W) 2 (3) (4) + (5) 1 (6) 0 -75 25 125 Tamb (°C) 225 (1) Ceramic PCB, single-sided copper, standard footprint (2) FR4 PCB, 4-layer copper, 1 cm 2 (3) FR4 PCB, single-sided copper, 6 cm 2 2 (4) FR4 PCB, single-sided copper, 1 cm (5) FR4 PCB, 4-layer copper, standard footprint (6) FR4 PCB, single-sided copper, standard footprint Fig. 1. Power derating curves 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] [3] [4] [5] [6] PBSS5330PAS Product data sheet Min Typ Max Unit [1] - - 250 K/W [2][3] - - 125 K/W [4] - - 100 K/W [5][6] - - 60 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. 2 Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm . All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 006aab979 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.02 1 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab980 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 10 0.2 0.1 0.05 0.02 1 0.5 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 1 cm Fig. 3. 10- 1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 006aac000 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 10 0.2 0.1 1 0.05 0.02 0 0.01 10- 1 10- 5 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 6 cm Fig. 4. 10- 1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-013299 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.50 0.33 0.20 10 0.10 0.05 0.02 0.01 1 10-1 10-5 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, 4-layer copper, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 102 aaa-013300 duty cycle = 1 Zth(j-a) (K/W) 0.50 10 0.20 0.75 0.33 0.10 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 FR4 PCB, 4-layer copper, mounting pad for collector 1 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 Zth(j-a) (K/W) 006aab982 duty cycle = 1 0.75 0.33 0.5 0.2 10 0.1 0.05 1 0.02 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -24 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -24 V; IE = 0 A; Tj = 150 °C - - -50 µA ICES collector-emitter cut-off VCE = -24 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -2 V; IC = -0.5 A; pulsed; 200 320 - 175 280 450 140 210 - 100 160 - - -45 -70 mV - -90 -130 mV - -170 -240 mV IC = -3 A; IB = -300 mA; pulsed; - -230 -320 mV RCEsat collector-emitter saturation resistance tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - 75 107 mΩ VBEsat base-emitter saturation IC = -2 A; IB = -100 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - -0.89 -1.1 V - -0.97 -1.2 V - -0.75 -1 V tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = -2 V; IC = -3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCEsat collector-emitter saturation voltage IC = -0.5 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = -1 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = -2 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VBEon base-emitter turn-on voltage VCE = -2 V; IC = -1 A; pulsed; td delay time VCC = -9 V; IC = -2 A; IBon = -0.1 A; - 11 - ns tr rise time IBoff = 0.1 A; Tamb = 25 °C - 59 - ns ton turn-on time - 70 - ns ts storage time - 165 - ns tf fall time - 35 - ns toff turn-off time - 200 - ns PBSS5330PAS Product data sheet tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit fT transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; 100 165 - MHz - 38 45 pF Tamb = 25 °C Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 006aac036 800 hFE 600 006aac037 -5 IC (A) IB (mA) = - 53 - 42.4 -4 (1) - 31.8 0 - 10- 1 - 10.6 (3) - 5.3 -1 -1 - 10 - 102 0 - 103 - 104 IC (mA) VCE = −2 V 0 - 0.4 - 0.8 - 1.2 - 1.6 - 2.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C Fig. 9. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 8. - 26.5 - 15.9 -2 200 - 37.1 - 21.2 -3 (2) 400 - 47.7 Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 006aac038 - 1.2 006aac039 - 1.4 VBEsat (V) VBE (V) (1) - 0.8 - 1.0 (2) (1) (3) (2) - 0.4 0 - 10- 1 - 0.6 -1 - 102 - 10 - 0.2 - 10- 1 - 103 - 104 IC (mA) (3) -1 - 10 VCE = −2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig. 10. Base-emitter voltage as a function of collector current; typical values 006aac040 -1 - 102 Fig. 11. Base-emitter saturation voltage as a function of collector current; typical values 006aac041 -1 VCEsat (V) - 103 - 104 IC (mA) VCEsat (V) - 10- 1 - 10- 1 (1) (1) (2) (2) (3) - 10- 2 - 10- 2 (3) - 10- 3 - 10- 1 -1 - 10 - 102 - 10- 3 - 10- 1 - 103 - 104 IC (mA) -1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 12. Collector-emitter saturation voltage as a function of collector current; typical values PBSS5330PAS Product data sheet - 10 - 102 - 103 - 104 IC (mA) Fig. 13. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 006aac042 102 006aac043 103 RCEsat (Ω) RCEsat (Ω) 102 10 10 (1) 1 1 10- 1 (1) (2) 10- 2 - 10- 1 -1 - 10 - 102 (2) (3) 10- 1 (3) - 103 - 104 IC (mA) 10- 2 - 10- 1 -1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 14. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5330PAS Product data sheet - 10 - 102 - 103 - 104 IC (mA) Fig. 15. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 16. BISS transistor switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 17. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 12. Package outline DFN2020D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm X v bp A B A D SOT1061D B A A1 E detail X pin 1 index area pin 1 index area solderable lead end, protrusion max. 0.02 mm (3x) e 1 C y1 C 2 Lp e1 visible depend upon used manufacturing technology (6x) E1 3 D1 0 1 mm A(1) A1 bp max 0.65 0.04 0.35 nom min 0.25 2 mm scale Dimensions (mm are the original dimensions) Unit y D D1 E E1 2.1 1.6 2.1 1.1 1.9 1.4 1.9 0.9 e 1.3 e1 Lp 0.3 0.45 0.2 0.35 v 0.1 y y1 0.05 0.05 Note 1. Dimension A is including plating thickness Outline version SOT1061D sot1061d_po References IEC JEDEC JEITA European projection Issue date 14-03-11 14-03-12 --- Fig. 18. Package outline DFN2020D-3 (SOT1061D) PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 13. Soldering Footprint information for reflow soldering of DFN2020D-3 package SOT1061D 2.1 1.7 1.3 0.4 (2x) 0.5 (2x) 0.3 (2x) 0.5 (2x) 0.6 (2x) 0.7 (2x) 0.25 1.1 2.5 0.35 0.3 0.25 2.3 0.25 1 0.35 1.1 0.35 1.2 0.35 0.3 0.4 0.5 1.5 1.6 1.7 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 14-03-05 14-03-12 sot1061d_fr Fig. 19. Reflow soldering footprint for DFN2020D-3 (SOT1061D) PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 14 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5330PAS v.1 20140911 Product data sheet - - PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 15 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PBSS5330PAS Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 16 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 17 / 18 PBSS5330PAS NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 8 11 11.1 Test information ................................................... 12 Quality information ............................................. 12 12 Package outline ................................................... 13 13 Soldering .............................................................. 14 14 Revision history ................................................... 15 15 15.1 15.2 15.3 15.4 Legal information .................................................16 Data sheet status ............................................... 16 Definitions ...........................................................16 Disclaimers .........................................................16 Trademarks ........................................................ 17 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 September 2014 PBSS5330PAS Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved 18 / 18