DF N2 020 D-3 PMEG2010EPAS 20 V, 1 A low VF MEGA Schottky barrier rectifier 19 January 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • • • • • • • • • Average forward current IF(AV) ≤ 1 A Reverse voltage VR ≤ 20 V Low forward voltage VF ≤ 375 mV Low reverse current Reduced Printed-Circuit-Board (PCB) area requirements Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity Leadless small SMD plastic package with visible and solderable side pads Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications • • • • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Free-wheeling application Reverse polarity protection Low power consumption application Battery chargers for mobile equipment LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 125 °C; [1] Min Typ Max Unit - - 1 A - - 1 A - - 20 V square wave δ = 0.5; f = 20 kHz; Tsp ≤ 145 °C; square wave VR reverse voltage Tj = 25 °C Scan or click this QR code to view the latest information for this product PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; - 320 375 mV - 335 1900 µA Tj = 25 °C; pulsed IR reverse current VR = 20 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 A anode 3 K cathode Simplified outline Graphic symbol 3 3 1, 2 006aab624 1 2 Transparent top view DFN2020D-3 (SOT1061D) 6. Ordering information Table 3. Ordering information Type number PMEG2010EPAS Package Name Description Version DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm SOT1061D 7. Marking Table 4. Marking codes Type number Marking code PMEG2010EPAS CR PMEG2010EPAS Product data sheet All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 20 V IF forward current Tsp ≤ 140 °C; δ = 1 - 1.4 A IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 125 °C; - 1 A - 1 A [1] square wave δ = 0.5; f = 20 kHz; Tsp ≤ 145 °C; square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 [2] - 7 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave [2] - 17 A Ptot total power dissipation Tamb ≤ 25 °C [3] - 500 mW [4] - 960 mW [1] - 1800 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] [4] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Both anode pins connected. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] [3] [4] [5] PMEG2010EPAS Product data sheet Min Typ Max Unit [1][2] - - 250 K/W [1][3] - - 130 K/W [1][4] - - 70 K/W [5] - - 12 K/W For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 006aab625 103 duty cycle = Zth(j-a) (K/W) 1 102 0.5 0.25 0.1 10 0.02 0.75 0.33 0.2 0.05 0.01 0 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab626 103 Zth(j-a) (K/W) duty cycle = 102 1 0.5 0.25 0.1 10 0 1 10- 3 0.75 0.33 0.2 0.05 0.02 0.01 10- 2 10- 1 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2010EPAS Product data sheet All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 102 006aab627 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 10 0.1 0 1 10- 3 0.75 0.33 0.2 0.05 0.02 0.01 10- 2 10- 1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2010EPAS Product data sheet All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 10 mA; tp = 300 µs; δ = 0.02; 20 - - V forward voltage IF = 0.5 A; tp ≤ 300 µs; δ ≤ 0.02; - 280 - mV - 320 375 mV - 135 - µA - 335 1900 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 175 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 65 - pF IF = 10 mA; IR = 10 mA; RL = 100 Ω; - 50 - ns VF Tj = 25 °C; pulsed Tj = 25 °C; pulsed IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed IR VR = 10 V; tp ≤ 300 µs; δ ≤ 0.02; reverse current Tj = 25 °C; pulsed VR = 20 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed Cd diode capacitance trr reverse recovery time IR(meas) = 1 mA; Tj = 25 °C 006aab628 10 IF (A) (1) 1 006aab629 10- 1 IR (A) 10- 2 (1) (2) (2) 10- 3 (3) 10- 1 (4) (5) 10- 4 (3) 10- 5 10- 2 10- 6 10- 3 10- 4 0 0.2 0.4 VF (V) 0.6 10- 8 0 5 (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig. 4. (4) 10- 7 Fig. 5. Forward current as a function of forward voltage; typical values PMEG2010EPAS Product data sheet 15 VR (V) 20 Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 19 January 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 006aab630 350 Cd (pF) 300 006aab631 0.5 PF(AV) (W) 0.4 (4) 250 (3) 0.3 200 (1) 150 (2) 0.2 100 0.1 50 0 Fig. 6. 0 4 8 12 16 VR (V) 0.0 0.0 20 0.5 f = 1 MHz; Tamb = 25 °C Tj = 150 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. 006aab632 1.5 1.0 IF(AV) (A) 1.5 Average forward power dissipation as a function of average forward current; typical values aaa-015088 0.3 (1) PR(AV) (W) PR(AV) (W) 1.0 0.2 (2) (3) (1) (2) (3) 0.5 0.1 (4) (4) 0 Fig. 8. 0 5 10 VR (V) 0 15 0 Tj = 125 °C Tj = 85 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Average reverse power dissipation as a function of reverse voltage; typical values PMEG2010EPAS Product data sheet Fig. 9. 10 15 VR (V) 20 Average reverse power dissipation as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 19 January 2015 5 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 006aab633 1.5 (1) IF(AV) (A) 006aab634 1.5 (1) IF(AV) (A) (2) (2) 1.0 1.0 (3) (3) 0.5 0.5 (4) 0.0 0 25 (4) 50 75 100 125 150 175 Tamb (°C) 0.0 FR4 PCB, standard footprint Tj = 150 °C 25 75 100 125 150 175 Tamb (°C) 2 (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values 006aab635 1.5 (1) Fig. 11. Average forward current as a function of ambient temperature; typical values 006aab636 1.5 (1) IF(AV) (A) (2) (2) 1.0 1.0 (3) (3) 0.5 0.5 (4) 0.0 50 FR4 PCB, mounting pad for cathode 1 cm Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz IF(AV) (A) 0 0 25 (4) 50 75 100 125 150 175 Tamb (°C) 0.0 0 25 50 75 Ceramic PCB, Al2O3, standard footprint Tj = 150 °C Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of ambient temperature; typical values PMEG2010EPAS Product data sheet 100 125 150 175 Tsp (°C) Fig. 13. Average forward current as a function of solder point temperature; typical values All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 11. Test information tr D.U.T. IF RS = 50 Ω tp 10 % t + IF SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS mga881 (1) 90 % VR input signal output signal Fig. 14. Reverse recovery time: test circuit and waveforms P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 15. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG2010EPAS Product data sheet All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 12. Package outline 1.3 0.35 0.25 1 0.3 0.2 0.65 max 0.45 0.35 0.04 max 2 1.1 0.9 2.1 1.9 3 1.6 1.4 2.1 1.9 Dimensions in mm 14-03-18 Fig. 16. Package outline DFN2020D-3 (SOT1061D) PMEG2010EPAS Product data sheet All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 13. Soldering Footprint information for reflow soldering of DFN2020D-3 package SOT1061D 2.1 1.7 1.3 0.4 (2x) 0.5 (2x) 0.3 (2x) 0.5 (2x) 0.6 (2x) 0.7 (2x) 0.25 1.1 2.5 0.35 0.3 0.25 2.3 0.25 1 0.35 1.1 0.35 1.2 0.35 0.3 0.4 0.5 1.5 1.6 1.7 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 14-03-05 14-03-12 sot1061d_fr Fig. 17. Reflow soldering footprint for DFN2020D-3 (SOT1061D) PMEG2010EPAS Product data sheet All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG2010EPAS v.2 20150119 Product data sheet - PMEG2010EPAS v.1 Modification: • PMEG2010EPAS v.1 20141208 - - PMEG2010EPAS Product data sheet Product status changed Preliminary data sheet All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG2010EPAS Product data sheet All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 15 PMEG2010EPAS NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 January 2015 PMEG2010EPAS Product data sheet All information provided in this document is subject to legal disclaimers. 19 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15