S ESIGN NEW D L5263 R O F ENDED ACEMENT E r at COMM E EPL R ente T NO port C m/tsc DE D R p N u E S M l o M chnica RECO Data eSheet tersil.c t our T IL or www.in c a t n o c S INTER 1- 888- HFA1205 TM Dual, 425MHz, Low Power, Video Operational Amplifier • Low Supply Current . . . . . . . . . . . . . . . . . 5.8mA/Op Amp • High Input Impedance . . . . . . . . . . . . . . . . . . . . . . . 2MΩ • Wide -3dB Bandwidth (AV = +2) . . . . . . . . . . . . . 425MHz These amplifiers deliver 425MHz bandwidth and 1350V/μs slew rate, on only 60mW of quiescent power. They are specifically designed to meet the performance, power, and cost requirements of high volume video applications. The excellent gain flatness and differential gain/phase performance make these amplifiers well suited for component or composite video applications. Video performance is maintained even when driving a back terminated cable (RL = 150Ω), and degrades only slightly when driving two back terminated cables (RL = 75Ω). RGB applications will benefit from the high slew rates, and high full power bandwidth. The HFA1205 is a pin compatible, low power, high performance upgrade for the popular Intersil HA5023. For a dual amplifier with output disable capability, please see the HFA1245 data sheet. Part # Information • Very Fast Slew Rate . . . . . . . . . . . . . . . . . . . . . 1350V/μs • Gain Flatness (to 50MHz). . . . . . . . . . . . . . . . . . . . . ±0.04dB • Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.03% • Differential Phase. . . . . . . . . . . . . . . . . . . . . 0.03 Degrees • Pin Compatible Upgrade to HA5023 Applications • Flash A/D Drivers • High Resolution Monitors • Video Switching and Routing • Professional Video Processing • Video Digitizing Boards/Systems • Multimedia Systems • RGB Preamps TEMP. RANGE (oC) PACKAGE PKG. NO. HFA1205IP -40 to 85 8 Ld PDIP E8.3 HFA1205IB (H1205I) -40 to 85 8 Ld SOIC M8.15 HA5023EVAL FN3605.6 Features The HFA1205 is a dual, high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 process. PART NUMBER (BRAND) July 2004 • Medical Imaging • Hand Held and Miniaturized RF Equipment • Battery Powered Communications • High Speed Oscilloscopes and Analyzers High Speed Op Amp DIP Evaluation Board Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” Pinout HFA1205 (PDIP, SOIC) TOP VIEW OUT1 1 -IN1 2 +IN1 3 V- 1 4 + + 8 V+ 7 OUT2 6 -IN2 5 +IN2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. Copyright © Intersil Corporation 2000, 2004 HFA1205 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11V DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSUPPLY Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Output Current (Note 2) . . . . . . . . . . . . . . . . . Short Circuit Protected 30mA Continuous 60mA ≤ 50% Duty Cycle ESD Rating Human Body Model (Per MIL-STD-883 Method 3015.7) . . . 600V Thermal Resistance (Typical, Note 1) θJA (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 2. Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous (100% duty cycle) output current must not exceed 30mA for maximum reliability. Electrical Specifications VSUPPLY = ±5V, AV = +1, RF = 560Ω, RL = 100Ω, Unless Otherwise Specified (NOTE 3) TEST LEVEL TEMP. (oC) MIN TYP MAX UNITS Input Offset Voltage A 25 - 2 5 mV A Full - 3 8 mV Average Input Offset Voltage Drift B Full - 1 10 μV/ oC PARAMETER TEST CONDITIONS INPUT CHARACTERISTICS Input Offset Voltage Common-Mode Rejection Ratio ΔVCM = ±1.8V A 25 45 48 - dB ΔVCM = ±1.8V A 85 43 46 - dB ΔVCM = ±1.2V A -40 43 46 - dB Input Offset Voltage Power Supply Rejection Ratio ΔVPS = ±1.8V A 25 48 52 - dB ΔVPS = ±1.8V A 85 46 50 - dB ΔVPS = ±1.2V A -40 46 50 - dB Non-Inverting Input Bias Current A 25 - 6 15 μA A Full - 10 25 μA Non-Inverting Input Bias Current Drift B Full - 5 60 nA/ oC Non-Inverting Input Bias Current Power Supply Sensitivity Non-Inverting Input Resistance ΔVPS = ±1.8V A 25 - 0.5 1 μA/V ΔVPS = ±1.8V A 85 - 0.8 3 μA/V ΔVPS = ±1.2V A -40 - 0.8 3 μA/V ΔVCM = ±1.8V A 25 0.8 2 - MΩ ΔVCM = ±1.8V A 85 0.5 1.3 - MΩ ΔVCM = ±1.2V A -40 0.5 1.3 - MΩ Inverting Input Bias Current A 25 - 2 8.5 μA A Full - 5 15 μA Inverting Input Bias Current Drift B Full - 60 200 nA/ oC Inverting Input Bias Current Common-Mode Sensitivity 2 ΔVCM = ±1.8V A 25 - 3 6 μA/V ΔVCM = ±1.8V A 85 - 4 8 μA/ V ΔVCM = ±1.2V A -40 - 4 8 μA/V HFA1205 Electrical Specifications VSUPPLY = ±5V, AV = +1, RF = 560Ω, RL = 100Ω, Unless Otherwise Specified (Continued) PARAMETER (NOTE 3) TEST LEVEL TEMP. (oC) MIN TYP MAX UNITS ΔVPS = ±1.8V A 25 - 2 5 μA/V ΔVPS = ±1.8V A 85 - 4 8 μA/V TEST CONDITIONS Inverting Input Bias Current Power Supply Sensitivity A -40 - 4 8 μA/V Inverting Input Resistance ΔVPS = ±1.2V C 25 - 55 - Ω Input Capacitance C 25 - 1.5 - pF Input Voltage Common Mode Range (Implied by VIO CMRR, +RIN, and -IBIAS CMS tests) A 25, 85 ±1.8 ±2.4 - V A -40 ±1.2 ±1.7 - V Input Noise Voltage Density (Note 6) f = 100kHz B 25 - 3.5 - nV/√Hz Non-Inverting Input Noise Current Density (Note 6) f = 100kHz B 25 - 2.5 - pA/√Hz Inverting Input Noise Current Density (Note 6) B 25 - 25 - pA/√Hz C 25 - 400 - kΩ AV = +1, +RS = 432Ω B 25 - 300 - MHz AV = +2 B 25 - 425 - MHz AV = -1, RF = 332Ω B 25 - 350 - MHz Full Power Bandwidth (VOUT = 5VP-P at AV = +2/-1, 4VP-P at AV = +1, Note 6) AV = +1, RS = 432Ω B 25 - 135 - MHz AV = +2 B 25 - 130 - MHz AV = -1, RF = 332Ω B 25 - 200 - MHz Gain Flatness (AV = +2,VOUT = 0.2VP-P, Note 6) To 25MHz B 25 - ±0.04 - dB To 50MHz B 25 - ±0.04 - dB f = 100kHz TRANSFER CHARACTERISTICS Open Loop Transimpedance Gain (Note 6) AC CHARACTERISTICS AV = +2, RF = 464Ω, Unless Otherwise Specified -3dB Bandwidth (VOUT = 0.2VP-P, Note 6) To 100MHz Minimum Stable Gain Crosstalk (AV = +2, Note 6) B 25 - ±0.07 - dB A Full - 1 - V/V 5MHz B 25 - -60 - dB 10MHz B 25 - -54 - dB AV = -1, RL = 100Ω RF = 560Ω A 25 ±3 ±3.5 - V A Full ±2.8 ±3 - V AV = -1, RL = 50Ω RF = 560Ω A 25, 85 50 60 - mA A -40 28 42 - mA OUTPUT CHARACTERISTICS Output Voltage Swing (Note 6) Output Current (Note 6) Output Short Circuit Current RF = 560Ω B 25 - 90 - mA Closed Loop Output Impedance (Note 6) DC, AV = +2, RF = 464Ω B 25 - 0.07 - Ω Second Harmonic Distortion (AV = +2, RF = 464Ω, VOUT = 2VP-P) 10MHz B 25 - -53 - dBc 20MHz B 25 - -45 - dBc Third Harmonic Distortion (AV = +2, RF = 464Ω, VOUT = 2VP-P) 10MHz B 25 - -55 - dBc 20MHz B 25 - -50 - dBc TRANSIENT CHARACTERISTICS AV = +2, RF = 464Ω, Unless Otherwise Specified Rise and Fall Times (VOUT = 0.5VP-P) Rise Time B 25 - 1.0 - ns Fall Time B 25 - 1.4 - ns Overshoot (VOUT = 0 to 0.5V, VIN tRISE = 1ns, Note 4) +OS B 25 - 5 - % -OS B 25 - 4 - % Overshoot (VOUT = 0.5VP-P, VIN tRISE = 1ns, Note 4) +OS B 25 - 5 - % -OS B 25 - 10 - % 3 HFA1205 Electrical Specifications VSUPPLY = ±5V, AV = +1, RF = 560Ω, RL = 100Ω, Unless Otherwise Specified (Continued) PARAMETER TEST CONDITIONS (NOTE 3) TEST LEVEL TEMP. (oC) MIN TYP MAX UNITS Slew Rate (VOUT = 4VP-P, AV = +1, +RS = 432Ω) +SR B 25 - 1150 - V/μs -SR (Note 5) B 25 - 800 - V/μs Slew Rate (VOUT = 5VP-P, AV = +2) +SR B 25 - 1425 - V/μs -SR (Note 5) B 25 - 900 - V/μs +SR B 25 - 2400 - V/μs -SR (Note 5) B 25 - 1350 - V/μs Slew Rate (VOUT = 5VP-P, AV = -1, RF = 332Ω) Settling Time (VOUT = +2V to 0V step, Note 6) Overdrive Recovery Time VIDEO CHARACTERISTICS To 0.1% B 25 - 23 - ns To 0.05% B 25 - 33 - ns To 0.025% B 25 - 85 - ns VIN = ±2V B 25 - 10 - ns AV = +2, RF = 464Ω, Unless Otherwise Specified RL = 150Ω B 25 - 0.03 - % RL = 75Ω B 25 - 0.03 - % RL = 150Ω B 25 - 0.03 - Degrees RL = 75Ω B 25 - 0.05 - Degrees Power Supply Range C 25 ±4.5 - ±5.5 V Power Supply Current (Note 6) A 25 5.6 5.8 6.1 mA/ Op Amp A Full 5.4 5.9 6.3 mA/ Op Amp Differential Gain (f = 3.58MHz) Differential Phase (f = 3.58MHz) POWER SUPPLY CHARACTERISTICS NOTES: 3. Test Level: A. Production Tested.; B. Typical or Guaranteed Limit Based on Characterization.; C. Design Typical for Information Only. 4. Undershoot dominates for output signal swings below GND (e.g., 0.5VP-P), yielding a higher overshoot limit compared to the VOUT = 0V to 0.5V condition. See the “Application Information “section for details. 5. Slew rates are asymmetrical if the output swings below GND (e.g., a bipolar signal). Positive unipolar output signals have symmetric positive and negative slew rates comparable to the +SR specification. See the “Application Information” text, and the pulse response graphs for details. 6. See Typical Performance Curves for more information. Application Information Optimum Feedback Resistor Although a current feedback amplifier’s bandwidth dependency on closed loop gain isn’t as severe as that of a voltage feedback amplifier, there can be an appreciable decrease in bandwidth at higher gains. This decrease may be minimized by taking advantage of the current feedback amplifier’s unique relationship between bandwidth and RF . All current feedback amplifiers require a feedback resistor, even for unity gain applications, and RF , in conjunction with the internal compensation capacitor, sets the dominant pole of the frequency response. Thus, the amplifier’s bandwidth is inversely proportional to RF . The HFA1205 design is optimized for a 464Ω RF at a gain of +2. Decreasing RF decreases stability, resulting in excessive peaking and overshoot (Note: Capacitive feedback will cause the same problems due to the feedback impedance decrease at higher 4 frequencies). At higher gains the amplifier is more stable, so RF can be decreased in a trade-off of stability for bandwidth. Table 1 lists recommended RF values for various gains, and the expected bandwidth. For good channel-to-channel gain matching, it is recommended that all resistors (termination as well as gain setting) be ±1% tolerance or better. Note that a series input resistor, on +IN, is required for a gain of +1, to reduce gain peaking and increase stability. TABLE 1. OPTIMUM FEEDBACK RESISTOR GAIN (ACL ) RF (Ω) BANDWIDTH (MHz) -1 332 350 +1 464 (+RS = 432Ω) 300 +2 464 425 +5 215 270 +10 180 115 HFA1205 For best operation, the DC source impedance seen by the non-inverting input should be ≥50Ω. This is especially important in inverting gain configurations where the noninverting input would normally be connected directly to GND. Pulse Undershoot and Asymmetrical Slew Rates The HFA1205 utilizes a quasi-complementary output stage to achieve high output current while minimizing quiescent supply current. In this approach, a composite device replaces the traditional PNP pulldown transistor. The composite device switches modes after crossing 0V, resulting in added distortion for signals swinging below ground, and an increased undershoot on the negative portion of the output waveform (see Figures 7, 11, 15 and 19). This undershoot isn’t present for small bipolar signals, or large positive signals (see Figures 5, 6, 9, 10, 13, 14, 17 and 18). Another artifact of the composite device is asymmetrical slew rates for output signals with a negative voltage component. The slew rate degrades as the output signal crosses through 0V (see Figures 7, 11, 15, and 19), resulting in a slower overall negative slew rate. Positive only signals have symmetrical slew rates as illustrated in the large signal positive pulse response graphs (see Figures 5, 9, 13 and 17). PC Board Layout The frequency response of this amplifier depends greatly on the amount of care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! Attention should be given to decoupling the power supplies. A large value (10μF) tantalum in parallel with a small value (0.1μF) chip capacitor works well in most cases. Terminated microstrip signal lines are recommended at the input and output of the device. Capacitance directly on the output must be minimized, or isolated as discussed in the next section. Care must also be taken to minimize the capacitance to ground at the amplifier’s inverting input (-IN). The larger this capacitance, the worse the gain peaking, resulting in pulse overshoot and possible instability. Reduce this capacitance by removing the ground plane under traces connected to IN, and keep connections to -IN as short as possible. Driving Capacitive Loads Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the amplifier’s phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (RS) in series with the output prior to the capacitance. 5 Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the RS and CL combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. Picking a point above or to the right of the curve yields an overdamped response, while points below or left of the curve indicate areas of underdamped performance. RS and CL form a low pass network at the output, thus limiting system bandwidth well below the amplifier bandwidth of 425MHz (for AV = +2). By decreasing RS as CL increases (as illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. In spite of this, bandwidth still decreases as the load capacitance increases. For example, at AV = +2, RS = 50Ω, CL = 22pF, the overall bandwidth is limited to 230MHz, and bandwidth drops to 80MHz at AV = +2, RS = 7Ω, CL = 390pF. 50 SERIES OUTPUT RESISTANCE (Ω) Non-inverting Input Source Impedance AV = +2 40 30 20 10 0 0 50 100 150 200 250 300 350 400 LOAD CAPACITANCE (pF) FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs LOAD CAPACITANCE Evaluation Board The performance of the HFA1205 may be evaluated using the HA5023 Evaluation Board. The performance of the HFA1205IB (SOIC) may be evaluated using the HA5023 Evaluation Board and a SOIC to DIP adaptor like the Aries Electronics Part Number 08-350000-10. The schematic for amplifier 1 and the board layout are shown in Figure 2 and Figure 3. Resistors RF, RG and RS may require a change to the appropriate value (see “Optimum Feedback Resistor” section) for the gain being evaluated. To order evaluation boards (Part Number HA5023EVAL), please contact your local sales office. HFA1205 50Ω OUT RG 1 RF 2 IN 50Ω 3 RS +5V 8 0.1μF 7 + 10μF 6 4 5 GND GND −5V 10μF 0.1μF FIGURE 2. MODIFIED EVALUATION BOARD SCHEMATIC FIGURE 3A. TOP LAYOUT FIGURE 3B. BOTTOM LAYOUT FIGURE 3. EVALUATION BOARD LAYOUT 6 HFA1205 Typical Performance Curves VSUPPLY = ±5V, RF = Value From the Optimum Feedback Resistor Table, TA = 25oC, RL = 100Ω, Unless Otherwise Specified 300 3.0 AV = +2 250 2.5 200 2.0 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (mV) AV = +2 150 100 50 0 -100 0 TIME (5ns/DIV.) FIGURE 5. LARGE SIGNAL POSITIVE PULSE RESPONSE 2.0 AV = +2 150 1.5 100 1.0 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (mV) 0.5 -1.0 TIME (5ns/DIV.) FIGURE 4. SMALL SIGNAL POSITIVE PULSE RESPONSE 50 0 -50 -100 -150 0 -0.5 -1.0 TIME (5ns/DIV.) FIGURE 7. LARGE SIGNAL BIPOLAR PULSE RESPONSE 300 3.0 AV = +1 AV = +1 2.5 200 OUTPUT VOLTAGE (V) 2.0 150 100 50 0 -50 -100 0.5 -2.0 TIME (5ns/DIV.) FIGURE 6. SMALL SIGNAL BIPOLAR PULSE RESPONSE 250 AV = +2 -1.5 -200 OUTPUT VOLTAGE (mV) 1.0 -0.5 -50 200 1.5 1.5 1.0 0.5 0 -0.5 TIME (5ns/DIV.) FIGURE 8. SMALL SIGNAL POSITIVE PULSE RESPONSE 7 -1.0 TIME (5ns/DIV.) FIGURE 9. LARGE SIGNAL POSITIVE PULSE RESPONSE HFA1205 Typical Performance Curves VSUPPLY = ±5V, RF = Value From the Optimum Feedback Resistor Table, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued) 2.0 200 1.5 1.0 100 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (mV) 150 AV = +1 AV = +1 50 0 -50 -100 -2.0 TIME (5ns/DIV.) FIGURE 10. SMALL SIGNAL BIPOLAR PULSE RESPONSE TIME (5ns/DIV.) FIGURE 11. LARGE SIGNAL BIPOLAR PULSE RESPONSE 300 3.0 AV = -1 AV = -1 2.5 200 2.0 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (mV) -0.5 -1.5 -200 150 100 50 0 -50 -100 0 -1.0 -150 250 0.5 1.5 1.0 0.5 0 -0.5 -1.0 TIME (5ns/DIV.) FIGURE 12. SMALL SIGNAL POSITIVE PULSE RESPONSE 8 TIME (5ns/DIV.) FIGURE 13. LARGE SIGNAL POSITIVE PULSE RESPONSE HFA1205 Typical Performance Curves VSUPPLY = ±5V, RF = Value From the Optimum Feedback Resistor Table, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued) 2.0 200 AV = -1 1.5 1.0 100 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (mV) 150 AV = -1 50 0 -50 -100 0.5 0 -0.5 -1.0 -150 -1.5 -200 -2.0 TIME (5ns/DIV.) FIGURE 14. SMALL SIGNAL BIPOLAR PULSE RESPONSE FIGURE 15. LARGE SIGNAL BIPOLAR PULSE RESPONSE 3.0 300 250 2.5 AV = +5 AV = +5 2.0 200 AV = +10 150 100 50 AV = +5 0 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (mV) TIME (5ns/DIV.) -50 1.5 1.0 0.5 AV = +5 0 -0.5 -100 -1.0 TIME (5ns/DIV.) TIME (5ns/DIV.) FIGURE 16. SMALL SIGNAL POSITIVE PULSE RESPONSE FIGURE 17. LARGE SIGNAL POSITIVE PULSE RESPONSE 2.0 200 150 1.5 AV = +5 AV = +5 1.0 AV = +10 50 0 -50 AV = +5 -100 OUTPUT VOLTAGE (V) 100 OUTPUT VOLTAGE (mV) AV = +10 AV = +10 0.5 0 -0.5 -1.0 AV = +5 -1.5 -150 -2.0 -200 TIME (5ns/DIV.) FIGURE 18. SMALL SIGNAL BIPOLAR PULSE RESPONSE 9 TIME (5ns/DIV.) FIGURE 19. LARGE SIGNAL BIPOLAR PULSE RESPONSE HFA1205 Typical Performance Curves VSUPPLY = ±5V, RF = Value From the Optimum Feedback Resistor Table, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued) 630 AV = +2 VOUT = 2V CH2 200 20 0.025 0 -0.025 -0.05 6.3 2.0 0.63 90 0.2 45 20 30 40 50 60 TIME (ns) 70 80 90 100 0.001 AV = +1, CH1 PHASE AV = -1 0 90 AV = +1 BOTH CHANNELS SHOWN 1 AV = -1 10 100 FREQUENCY (MHz) FIGURE 22. FREQUENCY RESPONSE 10 180 270 360 1000 NORMALIZED GAIN (dB) AV = +1, CH2 GAIN -3 0.01 0.1 1 3 6 10 FREQUENCY (MHz) 100 500 FIGURE 21. OPEN LOOP TRANSIMPEDANCE NORMALIZED PHASE (DEGREES) GAIN (dB) FIGURE 20. SETTLING TIME RESPONSE VOUT = 200mVP-P 0 VOUT = 200mVP-P 3 AV = +2, CH2 GAIN 0 AV = +2, CH1 AV = +5 -3 -6 PHASE AV = +10 0 90 AV = +10 AV = +5 AV = +2 180 270 360 BOTH CHANNELS SHOWN 1 10 100 FREQUENCY (MHz) FIGURE 23. FREQUENCY RESPONSE 1000 PHASE (DEGREES) 10 -6 135 0.063 -0.1 0 180 PHASE PHASE (DEGREES) 0.05 3 GAIN 63 GAIN (kΩ) SETTLING ERROR (%) 0.1 HFA1205 Typical Performance Curves VSUPPLY = ±5V, RF = Value From the Optimum Feedback Resistor Table, TA = 25oC, RL = 100Ω, AV = +1 GAIN (dB) VOUT = 1VP-P , CH2 GAIN 0 VOUT = 1VP-P , CH1 -3 VOUT = 2.5VP-P -6 GAIN 0 VOUT = 4VP-P -3 VOUT = 1VP-P , CH1 -6 VOUT = 4VP-P PHASE 0 90 VOUT = 4VP-P VOUT = 2.5VP-P VOUT = 1VP-P 180 270 360 10 100 FREQUENCY (MHz) 90 VOUT = 4VP-P VOUT = 2.5VP-P VOUT = 1VP-P 180 270 360 1000 1 AV = -1 10 100 FREQUENCY (MHz) 1000 FIGURE 25. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES BOTH CHANNELS SHOWN VOUT = 1VP-P -3 VOUT = 4VP-P -6 PHASE VOUT = 2.5VP-P 0 VOUT = 4VP-P 90 VOUT = 2.5VP-P 180 VOUT = 1VP-P 270 360 BOTH CHANNELS SHOWN 1 10 100 FREQUENCY (MHz) NORMALIZED GAIN (dB) GAIN 0 NORMALIZED PHASE (DEGREES) GAIN (dB) 0 BOTH CHANNELS SHOWN FIGURE 24. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES 3 VOUT = 2.5VP-P PHASE BOTH CHANNELS SHOWN 1 VOUT = 1VP-P , CH2 3 PHASE (DEGREES) AV = +2 3 PHASE (DEGREES) NORMALIZED GAIN (dB) Unless Otherwise Specified (Continued) 3 0 AV = +2, VOUT = 5VP-P -3 AV = +1, VOUT = 4VP-P -6 -9 1000 AV = -1, VOUT = 5VP-P 1 10 100 FREQUENCY (MHz) FIGURE 26. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES 1000 FIGURE 27. FULL POWER BANDWIDTH -40 VOUT = 200mVP-P -45 AV = +1, CH2 0.3 AV = -1 0.2 AV = +2, CH2 0.1 0 -0.1 AV = +2, CH1 -0.2 -0.3 RL = 100Ω -50 CROSSTALK (dB) NORMALIZED GAIN (dB) 0.4 RL = 1kΩ -55 -60 -65 -70 -75 -80 AV = +1, CH1 -85 -0.4 BOTH CHANNELS SHOWN 1 10 FREQUENCY (MHz) FIGURE 28. GAIN FLATNESS 11 100 0.3 1 10 FREQUENCY (MHz) FIGURE 29. CROSSTALK 100 HFA1205 Typical Performance Curves VSUPPLY = ±5V, RF = Value From the Optimum Feedback Resistor Table, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued) 10 AV = +2 20 OUTPUT RESISTANCE (Ω) AV = +2 ISOLATION (dB) 30 40 AV = +1 50 60 70 80 1K 100 10 1 0.1 0.01 90 100 10 100 FREQUENCY (MHz) 0.3 1000 1 10 FIGURE 30. REVERSE ISOLATION (S12) 100 100 AV = +2 NOISE VOLTAGE (nV/√Hz) TOI (dBm) 25 20 15 10 0 50 100 INI- INI+ ENI 0.1 TOTAL SUPPLY CURRENT (mA) OUTPUT VOLTAGE (V) 25oC 3.3 3.2 |-VOUT| (RL = 50Ω) 3.1 +VOUT (RL = 50Ω) 3.0 100 16 +VOUT (RL = 100Ω) 3.4 1 10 FREQUENCY (kHz) FIGURE 33. INPUT NOISE CHARACTERISTICS |-VOUT| (RL = 100Ω) 3.5 1 1 150 FIGURE 32. 3rd ORDER INTERCEPT vs FREQUENCY AV = -1 10 10 FREQUENCY (MHz) 3.6 1000 FIGURE 31. OUTPUT RESISTANCE 30 5 100 FREQUENCY (MHz) NOISE CURRENT (pA/√Hz) 1 2.9 2.8 14 -55oC 12 125oC 10 25oC 8 6 2.7 2.6 -50 -25 0 25 50 75 TEMPERATURE (oC) 100 FIGURE 34. OUTPUT VOLTAGE vs TEMPERATURE 12 125 4 3 4 5 6 SUPPLY VOLTAGE (±V) 7 FIGURE 35. SUPPLY CURRENT vs SUPPLY VOLTAGE 8 HFA1205 Die Characteristics DIE DIMENSIONS: SUBSTRATE POTENTIAL (POWERED UP): 69 mils x 92 mils 1750μm x 2330μm Floating (Recommend Connection to V-) PASSIVATION: METALLIZATION: Type: Nitride Thickness: 4kÅ ± 0.5kÅ Type: Metal 1: AICu (2%)/TiW Thickness: Metal 1: 8kÅ ± 0.4kÅ Type: Metal 2: AICu (2%) Thickness: Metal 2: 16kÅ ± 0.8kÅ TRANSISTOR COUNT: 180 Metallization Mask Layout HFA1205 -IN1 OUT1 NC V+ NC OUT2 +IN1 NC NC -IN2 NC V- NC 13 +IN2 HFA1205 Dual-In-Line Plastic Packages (PDIP) E8.3 (JEDEC MS-001-BA ISSUE D) N 8 LEAD DUAL-IN-LINE PLASTIC PACKAGE E1 INDEX AREA 1 2 3 INCHES N/2 -B- -AD E BASE PLANE -C- SEATING PLANE A2 A L D1 e B1 D1 A1 eC B 0.010 (0.25) M C A B S MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A - 0.210 - 5.33 4 A1 0.015 - 0.39 - 4 A2 0.115 0.195 2.93 4.95 - B 0.014 0.022 0.356 0.558 - C L B1 0.045 0.070 1.15 1.77 8, 10 eA C 0.008 0.014 0.204 C D 0.355 0.400 9.01 eB NOTES: 1. Controlling Dimensions: INCH. In case of conflict between English and Metric dimensions, the inch dimensions control. 0.005 - 0.13 - 5 E 0.300 0.325 7.62 8.25 6 E1 0.240 0.280 6.10 7.11 5 e 0.100 BSC eA 0.300 BSC 3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication No. 95. eB - L 0.115 5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 inch (0.25mm). 6. E and eA are measured with the leads constrained to be perpendicular to datum -C- . 7. eB and eC are measured at the lead tips with the leads unconstrained. eC must be zero or greater. 8. B1 maximum dimensions do not include dambar protrusions. Dambar protrusions shall not exceed 0.010 inch (0.25mm). 9. N is the maximum number of terminal positions. 10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm). 14 5 D1 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 4. Dimensions A, A1 and L are measured with the package seated in JEDEC seating plane gauge GS-3. 0.355 10.16 N 8 2.54 BSC 7.62 BSC 0.430 - 0.150 2.93 8 6 10.92 7 3.81 4 9 Rev. 0 12/93 HFA1205 Small Outline Plastic Packages (SOIC) M8.15 (JEDEC MS-012-AA ISSUE C) N INDEX AREA 0.25(0.010) M H 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M E INCHES -B- 1 2 SYMBOL 3 L SEATING PLANE -A- h x 45o A D -C- e µα A1 B 0.25(0.010) M C C A M B S 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. MILLIMETERS MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.1890 0.1968 4.80 5.00 3 E 0.1497 0.1574 3.80 4.00 4 0.050 BSC 1.27 BSC - H 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 8o 0o N NOTES: MAX A1 e 0.10(0.004) MIN α 8 0o 8 7 8o Rev. 0 12/93 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 15