PHOTOMULTIPLIER TUBE R13456 FEATURES ●High sensitivity Radiant at 900 nm................................... 7.3 mA/W (Typ.) Quantum efficiency at 900 nm ....................... 1 % (Typ.) ●Wide spectral response .......................... 185 nm to 980 nm ●Pin compatible with conventional 1-1/8" side-on PMTs APPLICATIONS ●Biomedical analysis Blood analyzer, Flow cytometer, DNA sequencer ●Environmental monitoring NOx analyzer ●Spectroscopy Fluorescence spectrometer, Raman spectrometer, UV–VIS-NIR spectrometer ●Microscopy Figure 1: Typical spectral response SPECIFICATIONS 100 Parameter Description / Value 185 to 980 Spectral response 400 Wavelength of maximum response MateriaI Multialkali Photocathode Minimum effective area 8 × 24 UV glass Window material Structure Circular-cage Dynode Number of stages 9 4 Direct interelectrode Anode to last dynode 6 Anode to all other electrodes capacitances Base 11-pin base JEDEC No. B11-88 Weight Approx. 45 Operating ambient temperature -30 to +50 Storage temperature -30 to +50 SuitabIe socket E678–11A (Sold separately) E717–63 (Sold separately) SuitabIe socket assembly E717–74 (Sold separately) Unit nm nm — mm — — — pF pF — g °C °C — CATHODE RADIANT SENSITIVITY (mA/W) GENERAL TPMSB0261EA 10 1 0.1 R13456 R928 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY — 0.01 100 200 300 400 500 600 700 800 900 1000 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2016 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R13456 MAXIMUM RATINGS (Absolute maximum values) Parameter Between anode and cathode Supply voltage Between anode and last dynode Average anode current A Unit V V mA Value 1250 250 0.1 CHARACTERISTlCS (at 25 °C) Parameter Quantum efficiency at 900 nm Luminous B at 194 nm at 254 nm at 400 nm Radiant at 633 nm at 852 nm Red/White ratio C Blue sensitivity index D Luminous E at 194 nm at 254 nm at 400 nm Radiant at 633 nm at 852 nm Cathode sensitivity Anode sensitivity Min. 0.3 140 — — — — — 0.3 — 400 — — — — — — — — — — — Gain E Anode dark current F (After 30 min storage in darkness) ENI (Equivalent Noise Input) G Anode pulse rise time H Time response Electron transit time I Transit time spread (T.T.S.) J Typ. 1 280 18 52 74 41 18 0.4 8 2800 1.8 × 105 5.2 × 105 7.4 × 105 4.1 × 105 1.8 × 105 1.0 × 107 5 1.7 × 10-16 2.2 22 1.2 Max. — — — — — — — — — — — — — — — — 50 — — — — Unit % µA/lm mA/W mA/W mA/W mA/W mA/W — — A/lm A/W A/W A/W A/W A/W — nA W ns ns ns NOTES A: Averaged over any interval of 30 s maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: Red/White ratio is the quotient of the cathode current measured using a red filter(Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. D: The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. E: Measured with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage distribution ratio Electrode Distribution ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 SuppIy voltage: 1000 V, K: Cathode, 1 1 1 Dy: Dynode, 1 P 1 P: Anode F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = 2q.ldb.G.∆f S where q = Electronic charge (1.60 × 10-19 coulomb). ldb = Anode dark current(after 30 min storage) in amperes. G = Gain. ∆f = Bandwidth of the system in hertz. 1 Hz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. I: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. Figure 2: Anode luminous sensitivity and gain characteristics 105 TPMSB0262EA Figure 3: Typical time response 100 108 TPMSB0004EC 80 60 104 107 40 TRANS IT TIME 103 106 105 TIME (ns) TYPICAL ANODE SENSITIVITY 102 20 GAIN ANODE LUMINOUS SENSITIVITY (A/lm) TYPICAL GAIN 10 8 6 101 MINIMUM ANODE SENSITIVITY 104 4 RISE T IME 100 103 10-1 500 700 2 102 1500 1000 1 500 700 Figure 4: Typical temperature coefficient of anode sensitivity Figure 5: Typical temperature characteristic of dark current (at 1000 V, after 30 min storage in darkness) TPMSB0263 EA 1000 TPMSB0264EA 100 5 DARK CURRENT (nA) TEMPERATURE COEFFICIENT (%/°C) 1500 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) 10 1000 0 10 1 -5 0.1 -10 200 300 400 500 600 700 800 900 WAVELENGTH (nm) 1000 0.01 -30 -20 -10 0 +10 +20 +30 +40 TEMPERATURE (°C) +50 PHOTOMULTIPLIER TUBE R13456 Figure 6: Dimensional outline and basing diagram (Unit: mm) 28.5 ± 1.5 Figure 7: Socket (Unit: mm) Sold separately E678-11A 8 MIN. 49 38 PHOTOCATHODE DY6 6 7 80 MAX. DY7 8 DY8 DY3 3 94 MAX. DY2 9 DY9 2 5 10 P 1 11 29 K DY1 4 DIRECTION OF LIGHT 18 49.0 ± 2.5 24 MIN. DY4 4 33 5 3.5 DY5 Bottom View (Basing Diagram) 32.2 ± 0.5 11 PIN BASE JEDEC No. B11-88 TPMSA0008EA Figure 8: D type socket assembly (Unit: mm) TACCA0064EA Sold separately E717-63 E717-74 HOUSING (INSULATOR) 10 P R10 9 DY8 8 DY7 C2 R8 C1 26.0±0.2 7 4 R6 5 R1 to R10 : 330 kΩ C1 to C3 : 10 nF DY4 A G 2.7 0.7 R5 31.0 ± 0.5 4 R4 HOUSING (INSULATOR) POTTING COMPOUND DY3 3 DY2 2 DY1 K 1 DY8 8 22.4±0.2 ° 10 R2 30° R10 C3 R9 C2 R8 C1 7 R7 K DY6 6 DY5 5 R6 R5 DY4 4 DY3 3 DY2 2 DY1 K 1 R1 to R10 : 330 kΩ C1 to C3 : 10 nF R4 SIDE VIEW R3 R3 0.7 R1 11 9 DY7 TOP VIEW 2 6 DY9 32.0±0.5 7 DY6 DY5 30.0 +0 -1 R9 SIGNAL OUTPUT (A) GND (G) 10 R7 29.0 ± 0.3 450 ± 10 C3 SOCKET PIN No. P 14.0±0.5 38.0 ± 0.3 49.0 ± 0.3 DY9 PMT SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) 26.0±0.2 SOCKET PIN No. 32.0±0.5 PMT 3.5 33.0 ± 0.3 5 R2 R1 11 -HV AWG22 (VIOLET) -HV (K) 4- 2.8 R13 * "Wiring diagram applies when -HV is supplied." To supply +HV,connect the pin "G" to+HV, and the pin "K" to the GND. BOTTOM VIEW TACCA0002EH TACCA0277EA * Hamamatsu also provides C4900 series compact high voltage power supplies and C12597-01 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal safety hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected] TPMS1102E01 China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No.158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)03-659-0080, Fax: (886)07-811-7238 E-mail: [email protected] MAR. 2016 IP