2016 01 Cover Story PAGE 4 Technological progress in large-format photomultiplier tubes at Super-Kamiokande OPTO-SEMICONDUCTOR PRODUCTS PAGE 21 16 ch distance measurement APD array for direct TOF ELECTRON TUBE PRODUCTS LIGHTNINGCURE LC-L5G High output 10 W/cm2 PAGE 24 SYSTEMS PRODUCTS PAGE 39 A new NanoZoomer for whole slide imaging Hamamatsu Photonics congratulates winners of the 2015 Nobel Prize in Physics Hamamatsu Photonics K.K. would like to congratulate Professor Takaaki Kajita of the University of Tokyo and Professor Arthur B. McDonald of Queen's University (Canada) for being jointly awarded the 2015 Nobel Prize in Physics for the discovery of neutrino oscillations, which shows that neutrinos have mass. Hamamatsu employees are especially delighted by the recognition of Professor Kajita, whose research at the Super Kamiokande was conducted in a large-scale facility that included photomultiplier tubes manufactured by the company’s Electron Tube Division. Professor Kajita was one of several top-tier physics researchers in Japan that provided feedback to Hamamatsu during the development of the high-performance 20-inch photomultiplier tube (R3600-05) that was installed at the Super Kamiokande facility to detect atmospheric and solar neutrinos. When observations at the facility began in 1996, there were 11,200 pieces of this photomultiplier tube installed in a 50,000-ton tank of pure water placed 1,000 meters underground. In 1998, when Professor Kajita announced the results of his observations at an international conference on neutrino astrophysics in Gifu Prefecture, his statement that “there is mass in neutrinos” was widely reported by news media in Japan. It is a source of great pride of Hamamatsu employees to have contributed to the discovery of new knowledge, as this is part of the company’s mission to continually support humankind’s journey of scientific discovery. For further information contact us on email: [email protected] or visit our website: www.hamamatsu.com 2 News 2016 Vol. 1 M ed ica l Lif eS cie nc e Dr ug Di sc ov M ery ea su rem en An t aly ti c al Se mi co nd .P Op ro ti c d. al Co mm Se cu s ri t y Ind us try ND Ins pe cti Ac on ad em ic Re se ar ch Content OPTO-SEMICONDUCTOR PRODUCTS 17 MPPC S13360 Series 18 MPPC module C13365 Series, C13366 Series 19 MPPC S13190 Series, S13615 Series 20 Micro-Spectrometer TF Series C13555MA, C13053-54MA 21 Photosensor with front-end IC S13645-01CR 22 Photo IC for Rangefinder S13021-01CT 23 CMOS Linear Image Sensors S11639-01, S13496 ELECTRON TUBE PRODUCTS 24 Linear Type UV-LED Unit LIGHTNINGCURE LC-L5G L12990-2303 25 Deuterium Lamp for Photoionization L13301 26 20 W Xenon Flash Lamp Module L12745 Series 27 Excimer Lamp Light Source "FLAT EXCIMERTM" EX-86U L13129 28 Micro PMT Photon Counting Head H12406/-01 29 Photomultiplier Tube Assembly H13175U-01/20/110 30 High Speed HPD (Hybrid Photo Detector) Assembly H13223-40 31 Head-on Type PMT/Assembly R12421-300 and H12690-300 32 Side-on Type Photomultiplier Tube R13194 33 Side-on Type Photomultiplier Tube R13456 34 Photomultiplier Tube Module H13320 Series 35 Photon Counting Head H13467 Series 36 Wide dynamic Range PMT Unit H13126, C12918 Series 37 High Voltage Power Supply Module C12766-12 SYSTEMS PRODUCTS 38 Optical NanoGauge Thickness Measurement System C13027-02 39 NanoZoomer S210 Digital Slide Scanner C13239-01 41 InGaAs Camera C12741-03, C12741-11 LASER PRODUCTS 43 Fiber Output Laser Diode L13181-01 44 Fiber Output Laser Diode L13421-01 45 CW Laser Diode L13421-04 46 CW Laser Diode L13400, L13402 47 Quantum Cascade Laser 48 Fiber Output Laser Diode Bar Module L13705-20-940DA 49 Pulsed Laser Diode Bar Module L13713-25P940 Cover Story Application Report 4Technological progress in large-format photomultiplier tubes at Super-Kamiokande 12Using super-resolution nanorulers to study the capabilities of EM-CCD and sCMOS cameras beyond the diffraction limit R&D Interview SERVICE 8Taking the lead by offering new choices in both high throughput and energy saving to the world's UV printing market. 50 Global Exhibitions 2016 51 Hamamatsu Photonics K.K. Sales Offices News 2016 Vol. 1 3 Cover Story Technological progress in large-format photomultiplier tubes at Super-Kamiokande Hiroyuki Kyushima, Electron Tube Technical Department, Electron Tube Division Super-Kamiokande*1 is a neutrino observatory located in the town of Kamioka in Hida city, Gifu prefecture, Japan. Super-Kamiokande leads the world in research on studying the properties of neutrinos*2 by detecting the faint Cherenkov light*3 generated by neutrinos in the rare cases where they collide with water molecules. Super-Kamiokande drew a great deal of international attention when Professor Takaaki Kajita, Director of the Institute for Cosmic Radiation Research, University of Tokyo, was awarded the 2015 Nobel Prize in Physics, following the 2002 Nobel Prize in Physics given to Masatoshi Koshiba, Emeritus Professor of University of Tokyo. reaching the tank wall, making it difficult to obtain a 50 centimeter position resolution equivalent to the diameter of one 20-inch photo multiplier tube. The specifications required by Professor Koshiba called for: (1) Obtaining pattern information for the Cherenkov light, (2) Time characteristics within 3 nanoseconds, and (3) Capable of clearly discrim inating the peak of the single-photon pulse height distribution from the noise level that becomes relatively noticeable as the number of photons decreases. Improving these characteristics made it essential to boost performance by creating a new 20-inch photomultiplier tube. Specs required for photomultiplier tubes at Super-Kamiokande In July 1986 we talked with Professor Koshiba about the next planning (for the Super-Kamiokande facility) after Kamiokande. This was some 7 months before Kamiokande succeeded for the first time in human history in observing neutrinos arriving from the supernova that explod ed in the Large Magellanic Cloud. Method for boosting performance of 20-inch photomultiplier tube We studied how to detect even just one photon more reliably wherever that photon might hit the surface of the photocathode. Fabricating a smaller electron multiplier section makes it harder to focus photoelec trons from photocathode onto the electron multiplier section with an electron lens due to geomagnetic effects. On the other hand, making the electron multiplier larger creates another problem that the thin electrodes droop during fabrication due to thermal effects. There was also the issue of how to minimize the difference in response time of photoelectrons emitted from the center and from the periphery of the photocathode surface. Professor Koshiba’s new plan called for enlarging the pure water tank size about 20 times from 3,000 tons to 50,000 tons. However, this en largement plan would cause a drastic drop in the number of photons To achieve these goals, we designed a new dynode with a large surface area. More specifically, to improve the time characteristics of the venetian-blind dynode, we halved the dynode width (pitch) to 2.5 mm to ob This article tells of an episode when we developed the large-format photomultiplier tubes*4 used at Super-Kamiokande and also describes how the technology we invented at that time is applied to our current products. 4 News 2016 Vol. 1 Cover Story tain a scale effect. We also widened the electron multiplier aperture to 90 mm from its prior diameter of 75 mm to minimize the geomagnetic effects. Furthermore, in order to make the photoelectrons emitted from the photocathode enter the first dynode more efficiently, we found the optimal position relation between the first and second dynodes and also arranged a grid pattern immediately in front of the first dynode to match each blade of the venetian-blind dynode. Since photoelectrons are emitted from the photocathode surface formed on the inner surface of a semispherical glass bulb in response to the incoming photons, they are greatly focused on the first dynode by the curvature of the semispherical surface and further focused by the grid pattern onto each blade of the first dynode. In this way we improved the time characteristics whilst simultaneously retaining the ability to clearly differentiate the peak of the single-photon pulse height distribution. Three patents from the development process Patent 1 Patent 2 Grid pattern placed immediately in front of first dynode [Objective] Arrange a designated pattern for the focusing electrode (grid pattern) placed between the photocathode and the first dy Fig.1 20 inch photomultiplier tube*1 node to focus photoelectrons by electron lens effect to efficiently guide photoelectrons from the photocathode to the first dynode. Patent 3 Optimized position relation between first and second dynodes [Objective] Fabricate a secondary electron multiplier and a photomultiplier tube with good collection efficiency by correcting the trajectory of secondary electrons emitted from the first dynode to increase number of electrons reaching the second dynode. Prevention of feedback to photocathode [Objective] Prevent ions and weak light gen erated near the anode of the photomultiplier tube from feeding back to the photocathode by utilizing an optimal number of frame shaped insulated spacers in the electron multiplier section. 20 inch photomultiplier tube*4 Ø 508 mm Photocathode*5 Focusing electrode*6 Second dynode Grid between dynodes First dynode 680 mm Anode*8 Sectional view of 20 inch photomultiplier tube Patent 3 Enlarged sectional view of electron multiplier*7 Patent 2 Patent 1 Enlarged sectional view of focusing electrode (grid pattern) and dynode *5 Photocathode: A photoemissive surface that emits electrons (photoelectrons) when *1 Super-Kamiokande: World’s largest water Cherenkov type neutrino observatory. struck by light (photons) in a vacuum. *2 Neutrino: A type of elementary particle having no electric charge and very rarely interacting *6 Focusing electrode: Electrode designedoftoaguide the photoelectrons emitted from the *1.with Photomultiplier tube: A type of vacuumdifficult tube that functions an extremely high sensitive photosensor. A typical photomultiplier tube is comprised photocathode (photoemissive surface), matter, which makes it extremely to detect. Theasgroup led by Professor T. Kajita photocathode toward the electron multiplier. provedelectrode, that neutrinos domultiplier have mass. focusing electron section, and an anode. *7 Electron multiplier: A secondary electron multiplier made up of multi-stage electrodes *3 Cherenkov light: Very faint bluish light emitted when charged particles pass through *2. Photocathode: A photoemissive surface that emits electrons (photoelectrons) when struck by light (photons) in a vacuum. (called dynodes) capable of multiplying electrons 1-10 million times. water at velocities close to the speed of light. *3. Focusing electrode:tube: Electrode designed to guide photoelectrons from the photocathode*8 Anode: toward the electron multiplier. An electrode that collects the electrons multiplied by the electron multiplier. *4 Photomultiplier A type of vacuum tubethe that functions as emitted an extremely high *4.sensitivity Electron multiplier: A secondary electron multiplier made up of multi-stage electrodes (called dynodes) capable of multiplying electrons to 1 million or even up to 10 million times. photosensor. A typical photomultiplier tube is comprised of a photocathode surface), electrode, electron multiplier section, multiplier. and an anode. *5.(photoemissive Anode: An electrode thatfocusing collects the electrons multiplied by the electron News 2016 Vol. 1 5 Cover Story Episode 1 Could not fabricate the electrode structure as designed A problem occurred in which the mold for making the dynode blades to dimensions of a 2.5 mm width and 90 mm length was broken only after a few press-work cycles. To resolve this problem, the High Energy Accelerator Research Organization (KEK) made mold fabrication exper iments. Then, the Hamamatsu-Electronic Press Co. Ltd. continued the development to fabricate a mold that splits in the center also by using several molds (2 cutting and bending processes, 2 forming and bending processes) and finally succeeded in making practical and hard-to-break molds with the stress applied to a single mold properly dispersed. 2 Problem of a large noise level The noise level drastically increased when a voltage of 1,000 V or more was applied. As a countermeasure to this problem, we interposed an insulating materials between the adjacent dynodes to prevent ions and light from feeding back to the photocathode in the electron multiplica tion process. 3 Dedicated manufacturing plant was needed A dedicated factory was required in order to manufacture 11,200 20-inch photomultiplier tubes. We adopted a design using an easy-toFig.2 Metal package photomultiplier tube see, easy-to-understand counterclockwise process layout within the plant. Up until that time, the workers held a large photomultiplier tube in their hands while moving them, but in the new plant, photomultiplier tubes are moved by cranes and roller conveyors after the sealing pro cess. The factory layout left in a room on the first floor of building No. 7 at the Toyooka Factory reminds us of the work at that time. some 250 km away. This was the first time in the world that artificial neutrinos were detected and this was verified by the detector at SuperKamiokande. Applying Super-Kamiokande technology (Technological continuity) 1 A pplying this technology to metal package photomultiplier tubes The technology for placing a grid pattern immediately in front of the first dynode has been even further simplified and applied to metal package photomultiplier tubes developed in 1992. Moreover, the technology for optimizing the position relation between the first and second dynodes has been utilized to invent metal channel dynodes with no grid patterns, which can be mounted between each of the further evolved venetianblind type dynodes. To obtain the same effect in preventing ions and light from feeding back to the photocathode without using grid patterns, the feedback prevention has been improved by minimizing the gap between dynodes and also by using metal packages. Metal package photomultiplier tube 1 inch square type 22 mm Flat panel type 52 mm 22 mm 32,7 mm The neutrino has mass On June 5, 1998, Professor Kajita made the startling announcement that “The neutrino has mass” at the ”International Conference on Neutrino Physics and Astrophysics” held at Takayama city, Japan. The conclusion that the neutrino has mass was reached from data found from observing atmospheric neutrinos over 2 years at Super-Kamiokan de. This led to a push to reconsider the conventional “Standard Model” of particle physics. On June 19, 1999, in order to verify that neutrinos have mass by utilizing artificial neutrinos, an experiment called K2K (or KEK to Kamioka) was performed in which a large quantity of muon-neutrinos made at the KEK synchrotron (proton accelerator) in the city of Tsukuba were launched through the earth toward Super-Kamiokande 6 News 2016 Vol. 1 TO-8 type Ø 16 mm 12 mm Electron Grid pattern First dynode Second dynode Cover Story As a result, we developed the world’s smallest (at that time) TO-8 metal package photomultiplier tubes that inherited the technology originally developed for the world’s largest photomultiplier tubes to achieve a compact design with excellent time characteristics and the ability to clearly differentiate the peak of single-photon pulse-height distribution. Dynodes have been downsized to a width of 1 mm or 1 mm pitch, and the forming method was changed from press-working to etching. These are utilized in TO-8 type, square type, and flat-panel type photomultiplier tubes. 2 Using this technology in micro PMT The cross section structure of a micro PMT (photomultiplier tube) we successfully developed in September 2010 is basically based on the same concept. It incorporates the grid pattern placed immediately in front of the first dynode and the optimized position relation between the first and second dynodes. To obtain the same effect in preventing ions and light from feeding back to the photocathode, its vacuum envelope is made of glass plates with the inner side metalized with aluminum and a silicon substrate that blocks out light MEMS technology for deep microstructure RIE (reactive ion etching) which did not yet exist at the time of initial development of the micro PMT. This MEMS technology allowed forming the focusing electrode (grid pattern), all dynodes, anode, and the vacuum envelope at one time. These processes proved ideal for mass production of the micro PMT for the first time in the world in a manner similar to semiconduc tor manufacturing processes. The photomultiplier tubes utilized the latest technologies available at that time and provided an innovative design and enhanced value. Those technologies were applied to various products ranging from the world’s largest 20-inch photomultiplier tubes to the world’s smallest micro PMT and from hereon we can anticipate even further dramatic advances. Product size comparison (1/10th of actual dimensions) a) A 3-dimensional curved dynode structure was utilized in view of the vacuum envelope thickness to help minimize the gap between dynodes while providing electron multiplier pathways. Achieving this kind of 3-dimensional deep microstructure of silicon required advances in Micro PMT (Photomultiplier tube) φ 508 mm x H 680 mm max. b) Connection terminal Second dynode First dynode Focusing electrode (grid pattern) c) Secondary electron φ 16 mm x H 12 mm Vacuum (to 10-4 Pa) e) 1cm Anode Direction of light Photocathode and input window d) Vacuum tube Last dynode Electron multiplier (dynodes) 52 x H 16.5 mm 1cm 30 x H 18.7 mm W 10 mm x H 18 mm a) 20-inch photomultiplier tube; b) flat panel type multianode photomultiplier tube; c) 1-inch square metal package photomultiplier tube; d) TO-8 metal package photomultiplier tube; e) micro PMT News 2016 Vol. 1 7 Taking the lead by offering new choices in both high throughput and energy saving to the world's UV printing market. リニア照射型UV-LEDユニット Linear type UV-LED unit LIGHTNINGCURE® LC-L5G Printers express and reproduce colors to an unbelievably realistic level to boost the basic product value. Among these, UV printers (printers using ultraviolet light to dry ink) are popular since they can print on almost any surface. The UV-LED light sources made by Hamamatsu Photonics are gaining a big name for themselves in the market of UV printers. Now, Hamamatsu offers the new linear type 8 News 2016 Vol. 1 UV-LED unit ”LIGHTNINGCURE LC-L5G.” Compared to the conventional model LC-L5, the LC-L5G delivers drastically higher specs including 1.5 times the input power, 7 times the light output and half the cost, yet its size is one-third that of the LC-L5. We interviewed the development team members to find out how they succeeded in creating this new model which is drawing global attention at exhibitions. R&D Interview Big expectations for UV-LED light sources from features found in conventional models So what type of product is the LIGHTNINGCURE LC-L5G? Suzuki: The LC-L5G is an LED light source that emits ultraviolet light. This product was designed to target the UV printing market. In addition to paper, UV printing works on all kinds of items including containers, cardboard boxes and boards. Moreover, the print quality is high and tact time (time for printing and drying) is short. Therefore the UV print ing market is rapidly expanding all over the world. Matsui: The technology to dry ink with ultraviolet light has been around for 60 years and UV printing itself has been steadily expanding for some 45 years. At the start of the 21st century, we saw an increasing demand in the UV printing market for shifting light sources from conventional metal halide lamps to energy-saving LED. At that time, UV-LED did not have enough output power and so failed to become widespread. About 5 to 6 years ago, UV-LED appeared having a light output equivalent to metal halide lamps. So now the use of UV-LED light sources has become practical. Suzuki: When the conventional model LC-L5 was released 5 years ago, we foresaw it would be used in the market of UV curing for assembly of smartphones and tablet computers. Applying ultraviolet light to dry the adhesive is one application of UV curing. What we also Irradiance distribution focused on, at the same time, was the market of UV printers. There were plenty of enquiries about the conventional model, but these ended with the comment “it still does not have enough power.” So we started designing and developing the LC-L5G in a bid to capture the printing market with a high-power model. In other words, the ultimate mission for developing the LC-L5G was to make a high power model, right? Suzuki: Yes, we knew through our conventional model that increased needs would arise in the printing market. We had to face the painful realization that our conventional model did not have enough power. In other words, we knew if we could increase light output we could acquire a larger market. We therefore poured all our efforts into accom plishing that goal. Matsui: The LC-L5G achieves specs of 10 W/cm2, which is the world’s highest output level among air-cooled types. It is 1.2 times that of our competitor’s products. Increasing the light output also boosts the printer throughput or, in other words, the production line speed. Suzuki: Currently, the metal halide lamp is the mainstream in light sources for UV printers, but it has a product service life of only 2,000 to 3,000 hours. However, by switching to UV-LED light sources, service life could be extended to 20,000 hours. The UV-LED may be more expen sive in terms of initial investment, but the low running costs make it a true bargain in the long term. Irradiance distribution X direction Y direction 12000 12000 Distance from beam exit point: 2 mm 8000 7 times UP 6000 4000 2000 0 -50 Conventional model LC-L5 -40 -30 LC-L5G 10000 Irradiance distribution (mW/cm2) Irradiance distribution (mW/cm2) 10000 Distance from beam exit point: 2 mm LC-L5G -20 8000 4000 2000 -10 0 10 20 Distance from irradiated center (mm) 30 40 50 7 times UP 6000 0 -30 Conventional model LC-L5 -20 -10 0 10 20 30 Distance from irradiated center (mm) News 2016 Vol. 1 9 R&D Interview The battle against heat, assessing options from every angle What were the critical factors in designing a high power UV-LED? Kashiwabara: The development requirements were extremely chal lenging … one third of the size, 1.5 times higher input power, 7 times higher light output and half the cost, yet a housing temperature about the same as a conventional model. Murayama: The first time I heard these challenging requirements, they seemed so impossible that I couldn’t believe my ears. Even on the conventional model we had a really hard time satisfying the heat dissipation requirements. Yet in spite of all that, we had to deal with increased heat emissions caused by the higher power output. More over, we were told this would not be water-cooled but must be air-cooled. To be honest, I thought accomplishing this was totally impossible. But in spite of all this, you achieved your goals didn’t you? Matsui: At a point where about one year had passed since the start of LC-L5G development, we had reached the same level as our com petitor’s products and had mostly secured orders from customers satisfied with how our prototype functioned. However, at that point in time, we had only reached about 70 % of our target relating to heat dissipation design; a critical requirement. So we faced the extremely tough situation of how to reach a 100 % successful design in only about 3 months. In the end it was Mr. Murayama who succeeded. Murayama: I knew I had to manage this heat dissipation issue, otherwise we couldn't complete development of this product. I studied the issue from all angles including selection of the housing material, heatsink size and fan, and the balance between the heatsink and the fan in an attempt to find a solution. Matsui: Mr. Kashiwabara and I also worked on each responsible area drying)All ensures clear printing. to get Pinning ridPinning of (temporary excess heat. were studied in each area and (temporary drying) aspects ensures clear printing. Mr. Murayama came through for us with the final breakthrough. You also had to re-evaluate the electronic circuits I suppose? Kashiwabara: Yes, we had to first reduce the circuit board size to one-third of the conventional model, which meant taking a new look at each and every circuit and closely examining what functions are needed and what functions are not. We basically had to scrape off any excess and if performance was low, select high performance parts and improve the circuit design in order to satisfy our target specifications. Of course we also had to meet demands to reduce costs which meant striking a balance between selecting electronic components and circuit design. A team that never forgot “Don’t say I can’t. Say I’ll try” What was the reason for setting all of these tough design requirements? Matsui: We first started out by fabricating what was basically an ex tension of our conventional model. However, a competitor of the same type UV-LED light sources already had a product capable of a light output of 8 W/cm2. That was the point we realized that just making a better model than our old one only gave us a product with half the light out put power of our competitors. That fact made us realize that “if another company can achieve such specs in that size, then we can do the same thing or even better. There is nothing that we cannot do if it’s already on the market” and so we set all of these tough design conditions. Suzuki: Those tough design conditions were also driven by customer demands and needs. Mr. Matsui set these design conditions to respond to what the market wanted to get. And so you were finally able to overtake the competitor’s product? Matsui: I think the area where we overtook our competitors was due to the successful efforts of Mr. Murayama and Mr. Kashiwabara. At this point I can now say that if it came to the worse case scenario and Mr. Murayama’s heat dissipation design didn’t work, then I was starting to think of lowering our specifications to the same level as our competitor’s product. Without pinning Without pinning (temporary drying) (temporary drying) With pinning With pinning (temporary drying) (temporary drying) Pinning Pinning (temporary drying) Drying (temporary drying) Drying Drying Drying Printing process Printing process Example: Example: Barcode printing Barcode printing Printing process Printing process Example: Example: Barcode printing Barcode printing Pinning (temporary drying) ensures clear printing. 10 News 2016 Vol. 1 R&D Interview Murayama: I never heard about that… (laughter). Actually in the final part of development, we simply could not get the internal tem perature to drop no matter what we did and so kept trying different experiments while sighing and hoping for better results. There were many times when I thought of going to Mr. Matsui and saying “I am really sorry, please make do with this.” But something inside kept pushing hard to make me continue trying to make those target prod uct specs a reality. After all kinds of experiments and design changes we finally succeeded, just barely meeting the deadline. I was really glad (laughter). Making our photonics technology major in the UV printing market What do you see as the likely new trends in the future? Pinning (temporary drying) ensures clear printing. Suzuki: During 2016 and beyond we will be offering various types of UV-LED to support a variety of printers including inkjet, screen, Without pinning flexographic, pre-drying, etc. I recently visited a printer exhibition in (temporary drying) Europe where I found that the UV printing market is demanding light Dryingtions. That will be output power higher than current product specifica Example: the next future issue to deal with. Suzuki: Our development team really showed great teamwork. I was involved in sales and even if I gave them a tough request such as “We need this” after listening to customer requests, the team would never say, “That’s impossible” but would start thinking about what to do Barcode printing Printing process next. This team takes the words of Mr. Teruo Hiruma (Chairman of the Board of Hamamatsu Photonics) to heart “Don’t say I can’t. Say I’ll try.” Murayama: That means I will have to start looking for a more efficient method to reduce heat. Mr. Matsui you really know how to put together a great team. What is your secret? Kashiwabara: I will be studying how to increase the input power to Matsui: That’s not something I consciously think about, but I always the circuitry. But driving circuits with high electrical power generates a welcome any ideas the members have to offer. great deal of heat. Figuring out how to put heat dissipation technology to work to eliminate heat in a limited space will be a development issue Murayama: He always listens to our ideas and if it looks possible where our entire team will have to work together to make progress. he immediately says: “Let’s try it.” He is definitely someone easy to approach with new ideas and plans. When I was having a hard time Matsui: I hope our UV-LED light sources will prove a valuable asset in with some problem, then Mr. Matsui and Mr. Kashiwabara would markets involvedPinning with (temporary printing drying) applications. I think it would be great ensures clear printing. always come up with a lot of plans and suggestions which in turn if technology utilizing light and optics could be expanded even further caused many ideas to bubble up inside me. into the printing market. Kashiwabara: If I proposed some type of approach to a problem with a circuit I was in charge of, then Mr. Matsui would say: “You might also try this other approach.” These types of exchanges helped create new ideas and after agreeing on them we were able to start making progress. Please read also product information on page 24. With pinning (temporary dry Without Suzuki: Applying not only UV-LED light sources but alsopinning excimer lamp (temporary drying) light sources to printing applications is being studied. Hamamatsu Photonics is a major player in the medical treatment and chemical analytical markets, but is still not well known in the printing market. Drying We will be working hard to also gain a name for “Hamamatsu” in the printing market. Printing process Members (from the left) Hiroya Kashiwabara, Electron Tube Division, Manuf. #4 (in charge of electrical circuitry) Kyoichi Murayama, Electron Tube Division, Manuf. #4 (in charge of housing & heat dissipation design) Ryotaro Matsui, Electron Tube Division, Manuf. #4 (coordinator of development project, in charge of LED) Akimasa Suzuki, Electron Tube Division, Business Promotion 2nd Group (in charge of sales) News 2016 Vol. 1 11 Pinning (temporary d Printing pro Application Report sing super-resolution nanorulers to study the capabilities of U EM-CCD and sCMOS cameras beyond the diffraction limit Light microscopes enabling super-resolution imaging suffer from a standardized quantification method. We demonstrate the quantification of a super-resolution microscope by using standardized DNA origami samples with the help of two leading camera technologies (EM-CCD and sCMOS). 1. Overview Recently, the Nobel Prize in chemistry was awarded to Stephan Hell, Eric Betzig and William E. Moerner for their groundbreaking improve ments in optical and single molecule microscopy. Their fundamental work and innovative approaches made it possible to image structures smaller than the diffraction barrier of light (~200 nm), a limit which was first introduced by Ernst Abbe in 1873. The development of novel types of microscopes, so called ‘super-resolution’ microscopes, enabled the visualization of biological processes on a molecular level and im proved the insight in diverse fields of biomedicine such as neuroscience, morphogenesis or drug delivery, to name a few. Researchers developed a large number of methods to overcome the diffraction barrier based on spatiotemporal fluorescent switching. In this paper, we performed a standard single molecule switching nano scopy (SMSN) technique to demonstrate how two camera technologies (EM-CCD and sCMOS) can resolve the world’s first standardized nano samples. The utilization of nanostructured standards from GATTAquant GmbH offered the opportunity to test the super-resolution capability of Hamamatsu´s leading camera technologies in a quantitative and reproducible way. 2. Introduction In nature nearly all biomolecules are smaller than 200 nm. As a con sequence, the finest structures of fluorescently labeled cells and their molecular components are hidden under the intensity peak from a single point source of light (point-spread function – PSF), which is emitted by a nanoscaled fluorophore. To overcome this barrier, superresolution microscopy makes use of the changing states of fluorescence markers and measures the shape of the blinking PSF1. In general there are two main techniques to achieve a bright ON or dark OFF state of fluorophores, either by deterministic photoswitching in space or by stochastically switching single molecule fluorescence ON and OFF in space and time. Prominent methods of the first technique involves ground state depletion (GSD) microscopy2, reversible saturable optical 12 News 2016 Vol. 1 fluorescence transition (RESOLFT) microscopy3, linear or saturated structured illumination microscopy4, 5 ((S)SIM) or stimulated emission depletion (STED) microscopy6. In the field of stochastic imaging (direct) stochastic optical reconstruction microscopy7, 8 ((d)STORM), (fluores cence) photo-activation localization microscopy9, 10 ((f)PALM), or (DNAbased) point accumulation for imaging in nanoscale topography11 ((DNA-)PAINT) are known to be commonly used. Nevertheless, whichever technique is applied, samples with standard ized dimensions are missing. Recently founded GATTAquant GmbH utilizes state-of-the-art innovations in the field of DNA nanotechnology to fabricate probes for fast, easy and precise quantification of superresolution systems12, 13. The samples allow the quantification of the resolution of the microscope with a precision of a few nanometers. This is possible by using special nanoconstructs, so called ‘DNA origami structures’14-16, as a breadboard for placing single dye molecules in an exactly defined pattern. This technique allows the placement of fluorophores in preassigned distances, subsequently serving as a ruler on the nanoscale. To study the capabilities of different cameras we focused on nanorulers using DNA-PAINT as SMSN technique (GATTAPAINT 80R nanoruler). DNA-PAINT is based on the transient binding of fluorophore-labeled “imager” strands to complementary target positions on the nanoruler, enabling a stochastic blinking and subse quently allowing for the reconstruction of a super-resolved image17. Besides the blinking technique itself and the optical instrument, which is necessary to perform super-resolution imaging, the camera is a key component. The sensor records the PSF, which is used to reconstruct the super-resolved image. Currently there are two leading camera technologies on the market, which are suitable for super-resolution imaging. In general, both offer a very low readout noise characteristic. The widespread electron multiplying charge coupled device (EM-CCD) cameras multiply the number of electrons on-chip before digitalization. New scientific complementary metal oxide semiconductor (sCMOS) cameras show comparable low-light sensitivities. In general, they are governed by an order of magnitude higher read noise (~1 e-) but do not suffer from electron multiplication noise compared to EM-CCDs. The goal of this white paper is to envision the capability of Hamamatsu’s cameras for super-resolution imaging using both EM-CCD and sCMOS technologies with the help of GATTAquant’s standardized nanorulers. Application Report In the equation, QE is the quantum efficiency which is the ratio of inci dent photons to converted electrons. For the sCMOS camera the peak quantum efficiency is 72 % (at 560 nm) and for the EM-CCD 92 % (at 560 nm). Further, S is the digital signal value in analogue digital units (ADU). Ib is the signal intensity of the background in the experiments. Nr is the readout noise and is a statistical expression of the variability within the electronics that convert the charge of the photoelectrons in each pixel to a digital number. EM gain occurs in a voltage dependent, stepwise manner and the total amount is a combination of the voltage applied and number of steps in the EM register. EM gain has a statistical distribution and an associated variance, which is accounted for by Fn. At typical EM-CCD gains up to 1200, Fn = ≈1.4. Since CCD and CMOS do not have EM gain, Fn = 1 in these cameras. Please note that in this calculation the dark current is neglected because exposure times in localization experiments are typically less than 1 s. In Figure 1, the signal-to-noise ratio in absolute values versus input signal photons in number of photons per pixel is plotted. Values are taken from the data sheets of the cameras. The blue line corresponds to the sCMOS camera and the green line to the EM-CCD camera. Additionally the effect of excess noise in EM-CCD cameras is plotted and expressed by the purple line. As sCMOS technology has a six fold smaller pixel area, the corrected plot for sCMOS is also shown and denoted as the red line. The graph suggests small advantages for sCMOS technology in terms of sensitivity of more than 10 photons per individual pixel (intersection of blue and green line). If excess noise is 1000 3 2,5 2 1,5 100 Signal to noise ratio 3. Imaging technologies Currently, there are two leading technologies in the field of ultra-low light camera detectors. Super-resolution imaging is clearly considered for ultra-low light applications since typical light levels are less than 1000 photons per pixel per frame. On the one hand there is the Electron Multiplying Charge Coupled Device (EM-CCD) sensor which multiplies the photoelectrons in an electron multiplying register on the chip and on the other hand the scientific grade Complementary Metal Oxide Semiconductor (sCMOS) sensor which amplifies the photoelectrons on the pixel directly. Typically, these different signal processes introduce different readout noise levels and characteristics20, 21. The electron mul tiplication in EM-CCD enables the detection of weak light and lowers the readout noise to less than 1e- (rms) but introduces additional noise (excess noise) which effectively lowers the superior quantum efficiency of more than 90 % by a factor of 2. In contrast, sCMOS cameras do not suffer from excess noise but show a higher readout noise of 1.4 e(rms). With the help of the following equation the signal-to-noise ratio can be calculated theoretically. 1 5 10 15 20 10 1 sCMOS EM-CCD sCMOS (compensated pixel size) EM-CCD (excess noise) 0.1 1 10 100 Input signal / photons per pixel 1000 10000 Figure 1: Theoretical signal-to-noise ratios for EM-CCD (green) and sCMOS (blue) in dependency of input photons per individual pixel at 688 nm. The purple line is the excess noise corrected SNR-plot for the EM-CCD and the red line compensates the different pixel sizes of the two sensors. accounted for with the EM-CCD, this intersection shifts to 4 photons per individual pixel. However, the corrected pixel sizes for the sCMOS camera reveals a 30 % better SNR. In some super resolution applications the acquisition speed may be another interesting sensor parameter that makes your application de manding. The EM-CCD camera allows 70 fps at full resolution whereas the rolling shutter in the sCMOS camera allows for an operation at 100 fps at full resolution. 4. Materials and methods Super-resolution standards (GATTA-PAINT 80R nanoruler) were provided as ready-to-use slides from GATTAquant GmbH, Braunschweig, Germany. High sensitivity cameras (ImagEM X2 and ORCA-Flash4.0 V2) were provided by Hamamatsu Photonics Deutschland GmbH, Herrsching, Germany. Super-resolution imaging was performed on a custom-built total in ternal reflection fluorescence (TIRF) microscope, based on an inverted microscope body (IX71, Olympus). For excitation, a 150 mW, 644 nm diode laser was used (iBeam smart, Toptica Photonics) which was spectrally filtered using a clean-up filter (Brightline HC 650/13, Semrock) and coupled into the microscope with a beamsplitter (zt 647 rdc, Chroma). The laser beam was focused to the backfocal plane of an oil-immersion objective (100x, NA = 1.4, UPlanSApo, Olympus) and News 2016 Vol. 1 13 Application Report b) a) Frequency Frequency 200 150 100 50 Frequency 100 Distance (nm) 150 f) 600 180 160 140 120 100 80 60 40 20 0 binding 20 40 FWHM (nm) 60 0 20 40 FWHM (nm) 60 350 300 400 250 300 200 200 150 100 100 0 0 400 500 Frequency e) d) 50 OFF designed with a distance of 80 nm between two adjacent marks (and consequently 160 nm between the two exterior marks). The fluores cence signal is based on the transient binding of ATTO 655 labeled imager oligonucleotides to the complementary target marks on the c) 0 ON Figure 2: Illustration of the DNA-PAINT imaging technique: The transient binding and unbinding of fluorescently labeled oligonucleotides to specifically designed binding sites, mimics a signal of blinking dye molecules which can be processed in the same way as standard localization based SR microscopy. 300 0 OFF Time 250 100 nm ON binding binding Intensity OFF unbinding 5. Results and discussion The GATTA-PAINT 80R nanorulers are straight rods based on DNA origami structures, featuring three marks for DNA-PAINT imaging ON unbinding Typical acquisition parameters were: laser power: ~9 kW/cm2, inte gration time: 30 ms, number of frames: 10,000, EM gain (for EM-CCD camera): 150. Acquisition was controlled by open source microscopy software Micro-Manager, followed by analysis using custom-built spot finding and 2D-Gaussian fitting algorithms based on MATLAB and LabVIEW. Reconstructed images with resolved nanorulers were finally analyzed using the GATTAnalysis software from GATTAquant GmbH. OFF unbinding aligned for TIRF illumination. In addition, a 1.6x optical magnification was applied resulting in an effective pixel size of 100 nm (EM-CCD) or 40.6 nm (sCMOS). The fluorescence light was spectrally filtered by an emission filter (ET 700/75, Chroma). For imaging, an electron multi plying charge coupled device (EM-CCD, ImagEM X2, Hamamatsu) or a scientific complementary metal oxide semiconductor (sCMOS, ORCAFlash4.0, Hamamatsu) camera was used. To minimize setup and sample drift, the microscope was mounted on an actively stabilized optical table (TS-300, JRS Scientific Instruments). Additionally, the objective was mounted via a nosepiece (IX2-NPS, Olympus). 50 0 50 100 Distance (nm) 150 0 Figure 3: a) DNA-PAINT images of GATTA-PAINT 80R nanorulers acquired with an EM-CCD camera. b) Gained distance histogram showing an average distance of (77 ± 14) nm. c) Gained histogram of the individual mark FWHMs showing an average FWHM of (25 ± 6) nm. d) DNA-PAINT images of GATTA-PAINT 80R nanorulers acquired with an sCMOS camera. e) Gained distance histogram showing an average distance of (79 ± 18) nm. f) Gained histogram of the individual mark FWHMs showing an average FWHM of (19 ± 8) nm. 14 News 2016 Vol. 1 Application Report nanoruler (Figure 2). The data presented originates from the identical probe, whereas the cameras were exchanged during this study. For both camera types – the EM-CCD and the sCMOS – hundreds of nanorulers could be resolved, confirming the qualitative capability for super-resolution imaging and subsequent image reconstruction. The re constructed image, given as a 2D heat map of the single events, clearly shows the three in-line marks of the nanoruler (Figure 3a and d). Using the GATTAnalysis software both the distances between adjacent marks and the full width at half maximum (FWHM) of every individual mark is determined for each ruler, respectively. The results are binned in a histogram and fitted accordingly with a Gaussian. The EM-CCD camera shows an average distance of (77 ± 14) nm for the GATTA-PAINT 80R nanoruler (Figure 3b) with a FWHM of (25 ± 6) nm (Figure 3c). Using the same acquisition parameters for the sCMOS camera, the distance values of (79 ± 18) nm tend to be very similar in comparison to the EM-CCD camera (Figure 3e), nevertheless the FWHM is clearly shifted to (19 ± 8) nm, resulting in an improved FWHM by 24 % (Figure 3f). In the following the intensity signals of the blinking events are iden tified in detail for both the EM-CCD and sCMOS. Therefore, 10 intensity levels from the blinking spots from 10 different frames are measured. The EM-CCD showed average intensity values of (29,098 ± 8,590) ADU a) 1400 2 µm and the sCMOS (768 ± 266) ADU. Both camera sensors allow 16 bit ADU values so that the EM-CCD is saturated by 44 % and the sCMOS to only 1.2 % on average. However to calculate the signal-to-noise ratio the background signal also has to be taken into account. To identify the average background signals the mean value of a square is measured (see Figure 4). The EM-CCD has background intensities of (15,224 ± 564) ADU and the sCMOS (282 ± 21) ADU. Now these values can be used to calculate the signal-to-noise ratios as previously explained (see equation 1). The EM-CCD shows a SNR of 93 per pixel and the sCMOS 20 per pixel. Considering the six times smaller pixel area (256 µm² / 42.25 µm² = 6) of the sCMOS this value increases to 120. In other words the sCMOS sensor has an improved SNR of 30 %. This fact validates the theoretical SNR consideration discussed before (see Imaging Technologies). Nevertheless the intensities are highly sufficient for threshold-based spot finding and subsequent 2D Gaussian fitting. The calculated distance values of the reconstructed nanorulers only slightly deviate for each camera type. Further they strongly agree with the designed distance of 80 nm within the given standard error. The FWHM for the EM-CCD is found to be around 25 nm, a value comparable to previous DNA-PAINT measurements17-19. Nevertheless, our finding that the FWHM for the sCMOS is around 19 nm opens the potential use of these camera types for single molecule measurements. b) 37500 750 22750 100 8000 2 µm Figure 4: a) sCMOS raw image (480 x 360 pxls) b) EM-CCD raw image (192 x 144 pxls). The images are 8bit LUT corrected. A red square identifies the area where the background intensity was identified in the SNR calculation. The red circle measures a PSF of a fluorophore. The color scales indicate the intensity values in ADU. News 2016 Vol. 1 15 Application Report 6. Conclusions The utilization of GATTAquant´s standardized nanostructures for superresolution microscopy offers a variety of advantages compared to previ ous test samples like microtubules or fluorescent beads. It is the first time that a large amount of identical patterns, with defined distances, is available and these nanorulers allow for the parallel analysis and statis tical validation of the resolution of the set-up. In addition, their fluorescent properties are – due to the selected type and number of dyes – comparable to real samples, for instance mimicking classically stained cell samples in a more comparable way to setup parameters and settings. Now, the utilization of these standard probes enables the verification of the performance of different camera types under uniform (or stable) conditions. The statistical data evaluation allows a direct comparison of Hamamatsu´s EM-CCD and sCMOS cameras and confirms their benefit for super-resolution imaging. The SNR measurement showed small advantages for sCMOS technol ogy. Recently, Hamamatsu launched a new sCMOS camera with 10 % increase of quantum efficiency over the visible spectra. This makes sCMOS technology even more suitable for super-resolution imaging. Key words DNA-PAINT, Standardized Super Resolution, Ultra Low Light Camera, Nanoruler, sCMOS, EM-CCD Authors Dr. Benjamin Eggart, Application Engineer +49 (8152) 375 205, [email protected] Hamamatsu Photonics Deutschland GmbH http://www.hamamatsu.de Dr. Max Boy Scheible, Research and Development +49 (531) 391 5349, [email protected] GATTAquant GmbH http://www.gattaquant.com/ Dr. Carsten Forthmann +49 (531) 391 5349, [email protected] GATTAquant GmbH http://www.gattaquant.com/ References 1. Hell, S. W., Far-field optical nanoscopy. In Science, 2007; Vol. 316, p 1153. 2.Hell, S. W.; Kroug, M., Ground-state-depletion fluorscence microscopy: A concept for breaking the diffraction resolution limit. In Applied Physics B, Springer: 1995; Vol. 60, pp 495-497. 3.Hofmann, M.; Eggeling, C.; Jakobs, S.; Hell, S. W., Breaking the diffraction barrier in fluorescence microscopy at low light intensities by using reversibly photoswitchable proteins. In Proc Natl Acad Sci USA, 2005; Vol. 102, pp 17565-17569. 4.Gustafsson, M. G. L., Surpassing the lateral resolution limit by a factor of two using structured illumination microscopy. In Journal of Microscopy, 2000; Vol. 198, pp 82-87. 16 News 2016 Vol. 1 5. Gustafsson, M., Nonlinear structured-illumination microscopy: Wide-field fluorescence imaging with theoretically unlimited resolution. In Proceedings of the National Academy of …, 2005. 6. Hell, S. W.; Wichmann, J., Breaking the diffraction resolution limit by stimulated emission: stimulated-emission-depletion fluorescence microscopy. In Opt Lett, Optical Society of America: 1994; Vol. 19, pp 780-782. 7.Rust, M. J.; Bates, M.; Zhuang, X., Sub-diffraction-limit imaging by stochastic optical reconstruction microscopy (STORM). In Nat Meth, 2006; Vol. 3, pp 793-795. 8. Heilemann, M.; van de Linde, S.; Schüttpelz, M.; Kasper, R.; Seefeldt, B.; Mukherjee, A.; Tinnefeld, P.; Sauer, M., Subdiffraction-Resolution Fluorescence Imaging with Conventional Fluorescent Probes. In Angew Chem Int Ed Engl, 2008; Vol. 47, pp 6172-6176. 9.Betzig, E.; Patterson, G. H.; Sougrat, R.; Lindwasser, O. W.; Olenych, S.; Bonifacino, J. S.; Davidson, M. W.; Lippincott-Schwartz, J.; Hess, H. F., Imaging intracellular fluorescent proteins at nanometer resolution. In Science, 2006; Vol. 313, pp 1642-1645. 10.Hess, S. T.; Girirajan, T. P. K.; Mason, M. D., Ultra-high resolution imaging by fluorescence photoactivation localization microscopy. In Biophys J, 2006; Vol. 91, pp 4258-4272. 11.Sharonov, A.; Hochstrasser, R., Wide-field subdiffraction imaging by accu mulated binding of diffusing probes. In Proc Natl Acad Sci USA, 2006; Vol. 103, p 18911. 12. Schmied, J. J.; Gietl, A.; Holzmeister, P.; Forthmann, C.; Steinhauer, C.; Dammeyer, T.; Tinnefeld, P., Fluorescence and super-resolution standards based on DNA origami. In Nat Meth, 2012; Vol. 9, pp 1133-1134. 13.Schmied, J. J.; Raab, M.; Forthmann, C.; Pibiri, E.; Wünsch, B.; Dammeyer, T.; Tinnefeld, P., DNA origami-based standards for quantitative fluorescence microscopy. In Nat Protoc, 2014; Vol. 9, pp 1367-1391. 14.Rothemund, P. W. K., Folding DNA to create nanoscale shapes and patterns. In Nature, 2006; Vol. 440, pp 297-302. 15.Douglas, S. M.; Dietz, H.; Liedl, T.; Högberg, B.; Graf, F.; Shih, W. M., Selfassembly of DNA into nanoscale three-dimensional shapes. In Nature, 2009; Vol. 459, pp 414-418. 16.Dietz, H.; Douglas, S. M.; Shih, W. M., Folding DNA into twisted and curved nanoscale shapes. In Science, 2009; Vol. 325, pp 725-730. 17. Jungmann, R.; Steinhauer, C.; Scheible, M. B.; Kuzyk, A.; Tinnefeld, P.; Simmel, F. C., Single-molecule kinetics and super-resolution microscopy by fluorescence imaging of transient binding on DNA origami. In Nano Lett, 2010; Vol. 10, pp 4756-4761. 18.Lin, C.; Jungmann, R.; Leifer, A. M.; Li, C.; Levner, D.; Church, G. M.; Shih, W. M.; Yin, P., Submicrometre geometrically encoded fluorescent barcodes self-assembled from DNA. In Nat Chem, 2012; Vol. 4, pp 832-839. 19.Scheible, M. B.; Pardatscher, G.; Kuzyk, A.; Simmel, F. C., Single molecule characterization of DNA binding and strand displacement reactions on lithographic DNA origami microarrays. In Nano Lett, 2014; Vol. 14, pp 16271633. 20.Hernandez-Palacios, J., and L. L. Randeberg. “Intercomparison of EM-CCDand sCMOS-based imaging spectrometers for biomedical applications in lowlight conditions.“ SPIE BiOS. International Society for Optics and Photonics, 2012. 21.Long, Fan, Shaoqun Zeng, and Zhen-Li Huang. “Localization-based superresolution microscopy with an sCMOS camera Part II: Experimental meth odology for comparing sCMOS with EM-CCD cameras.“ Optics express 20.16 (2012): 17741-17759. nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca Lif ed M OPTO-SEMICONDUCTOR PRODUCTS MPPC S13360 Series New Low crosstalk MPPC® for precision measurement The S13360 series are MPPCs for precision measurement. They inherit the superb low afterpulse characteristics of previous products and further provide lower crosstalk and lower dark count. Various types with different photosensitive areas and pixel pitches are available. Features Reduced crosstalk and dark count (compared to previous products) Excellent photon-counting capability (excellent detection efficiency versus number of incident photons) MPPC array also available (S13361 series) S13360 series Applications Fluorescence measurement Laser microscope Flow cytometry DNA sequencer For details on product specifications, visit our website. Pulse waveform comparison (typical example) NEW S13360-3050CS series (M = 1.25 × 106) (M = 1.25 × 106) 50 mV 50 mV Previous product 10 ns 10 ns News 2016 Vol. 1 17 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif M ed OPTO-SEMICONDUCTOR PRODUCTS MPPC module C13365 Series, C13366 Series New Low-light-level measurement module with built-in new MPPC The C13365/C13366 series are modules capable of low-light-level detection with a new built-in MPPC for precision measurement. These modules consist of an MPPC, an amplifier, a high-voltage power supply circuit, and a temperature compensation circuit. The modules operate by simply connecting them to an external power supply (±5 V). Digital output and analog output types are available. Features New MPPC for precision measurement built-in High sensitivity in the short wavelength range Low noise equivalent power Built-in temperature compensation circuit Compact and lightweight C13365 series, C13366 series Applications Low-light-level measurement Specifications Parameter C13365 -1350SA C13366 -3050SA -1350GA -3050GA -1350GD -3050GD Output Analog Analog Digital Cooling Non-cooled Cooled Cooled Photosensitive area Number of pixels 1.3 x 1.3 667 Pixel pitch Photoelectric sensitivity Photon detection efficiency Noise equivalent power*1 Dark count*2 *1 Dark state *2 Threshold: 0.5 p.e. 18 News 2016 Vol. 1 3.0 x 3.0 1.3 x 1.3 3,600 667 50 50 1.0 x 109 0.5 1.2 - 3.0 x 3.0 1.3 x 1.3 3,600 667 Unit - 3.0 x 3.0 3,600 mm - 50 µm 1.0 x 109 - V/W - 40 % - fW/Hz1/2 0.1 0.15 - 2.5 12 kcps nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M OPTO-SEMICONDUCTOR PRODUCTS MPPC S13190 Series, S13615 Series New MPPCs in a chip size package miniaturized through the adoption of TSV*1 structure 1m m The S13190/S13615 series are MPPCs for precision measurement miniaturized by the use of TSV and CSP*2 technologies. The adoption of a TSV structure made it possible to eliminate wiring on the photosensitive area side, resulting in a compact structure with little dead space compared with previous products. The four-side buttable structure allows multiple devices to be arranged side by side to fabricate large-area devices. The S13190 series offers wide dynamic range, whereas the S13615 series feature low crosstalk. MPPC arrays with higher resolution than previous products are also available. m 1m S13190 series, S13615 series Features Compact chip size package with little dead space Low cost Wide dynamic range Low afterpulses MPPC arrays also available 8 x 8 ch Applications Distance measurement Nuclear medicine High energy physics experiments 4 x 4 ch 16 x 16 ch Examples of MPPC arrays *1 Through-silicon via *2 Chip size package Structure comparison with a previous product 2,425 mm Previous product 300 µm Epoxy resin 250 µm MPCC 300 µm Solder Circuit board (prepared by the user) 1.13 mm New MPPC S13190/S13615 series Miniaturization Support glass 310 µm 50 µm TSV MPCC Solder Circuit board (prepared by the user) News 2016 Vol. 1 19 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif M ed OPTO-SEMICONDUCTOR PRODUCTS Micro-Spectrometer TF Series C13555MA, C13053MA, C13054MA New High performance mini-spectrometers in an ultraslim package The TF series are high performance mini-spectrometers in a 12 mm deep, ultraslim package. Utilising a high-sensitivity CMOS linear image sensor results in a sensitivity equivalent to that of a CCD, with low power consumption. A trigger function for short integration times, enables spectroscopic measurement of pulse emissions. The C13054MA is a high resolution mini-spectrometer suitable for Raman spectroscopy. Features Compact, ultra-thin package High-sensitivity CMOS linear image sensor Trigger compatible (software trigger, external trigger) USB bus powered (no external power supply necessary) C13054MA Applications C13555MA Visible light source inspection Color measurement C13053MA Sugar content and acidity measurement of foods Plastic screening Film thickness gauge C13054MA Raman spectroscopy Specifications Type Type no. C13555MA Photo Spectral response range (nm) 200 400 600 800 1000 1200 1400 Spectral resoltion max. (mm) Integration time (μs) Trigger function High sensitivity 500 to 1,100 3.5 High Resolution TF series for Raman spectroscopy 20 News 2016 Vol. 1 C13054MA Type Pixels Highsensitivity CMOS linear image sensor 512 3 340 to 830 TF series C13053MA Internal image sensor 790 to 920 0.7 11 to 100,000 Yes nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M OPTO-SEMICONDUCTOR PRODUCTS Photosensor with front-end IC S13645-01CR New 16 channel distance measurement APD array for direct TOF*1 The S13645-01CR is a device designed for direct TOF measurement. It integrates Hamamatsu's 16 ch Si APD array and TIA*2. It has a built-in DC feedback circuit for reducing the effects of background light. It also provides excellent noise and frequency characteristics. Features Integration of 16 ch Si APDs and TIA High-speed response: 200 MHz Background light elimination function Switchable gain amp (x1 or x20) No waveform distortion with excessive incident light S13645-01CR Block diagram GND-TIAVdd-TIA Applications Distance measurement Object detection Dummy cathode SW1 Buffer TIA DCFB *1 Time-of-Flight *2 Trans-impedance amplifier SW2 VGA Buffer SW3 Dummy amp DC current replica out1 out2 Gain TIA Specifications DCFB Parameter Photosensitive area/ch (H x V) Specification Unit 0.4 x 1.0 mm Peak sensitivity wavelength 840 nm Feedback resistance 2.5 kΩ Cutoff frequency 200 MHz Noise equivalent characteristics 160 fW/Hz1/2*3 Gain GND-VGAVdd-VGA High gain 1,000 Low gain 50 DCM Select logic APD-Anode DCM_dis D0 D1 D2 D3 kV/W*3 *3 λ = 840 nm, M = 50 at 10 MHz. News 2016 Vol. 1 21 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif M ed OPTO-SEMICONDUCTOR PRODUCTS Photo IC for Rangefinder S13021-01CT New 1 channel distance measurement photo IC for indirect TOF*1 The S13021-01CT is a distance measurement device using the indirect TOF method. It integrates Hamamatsu’s CMOS sensor and signal processing circuit. The sensor outputs signals proportional to the time for the pulse-modulated light reflect by the target object and return. The output value can be used to calculate the distance to the target object. The S13021-01CT runs on low voltage (3.3 V) and supports I2C and SPI interfaces. Features Low voltage operation (3.3 V) I2C interface/SPI ready Built-in 16-bit A/D converter S13021-01CT Block diagram Applications Distance measurement Object detection CMOS sensor *1 Time-of-Flight Specifications Parameter Photosensitive area Specification Unit 0.4 x 0.4 mm Peak sensitivity wavelength 800 µm Current consumption 12 mA Output voltage Dark state*2 1.4 When saturated 0.65 VDD = 3.3 V *2Output value immediately after reset 22 News 2016 Vol. 1 V S/H ∆∑ A/D converter I2 C timing SPI LED driver Microcomputer FPGA nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M OPTO-SEMICONDUCTOR PRODUCTS CMOS Linear Image Sensors S11639-01, S13496 New High sensitivity, employs vertically long pixels The S11639-01 and S13496 are high sensitivity CMOS linear image sensors employing a photosensitive area consisting of vertically long pixels (pixel height: 200 μm). High sensitivity and high resistance have been achieved, even in the ultraviolet region. These sensors operate on a single 5 V power supply making them suitable for low cost spectrometers. Differences from previous products Readout noise and dark current were reduced to approximately half those of the previous product. Moreover, variations in sensitivity in the ultraviolet region (200 to 300 nm) have been suppressed. Spectral response (typical example) Features High sensitivity in the UV to near IR region Simultaneous integration of all pixels Variable integration time function (electronic shutter function) Single 5 V power supply operation (Ta = 25 deg. C.) 100 100 RelativeRelative sensitivity (%) (%) sensitivity 80 Applications Spectroscopy Position detection Image scanning Encoders 80 60 60 40 40 20 20 0 Specifications 0 Number of effective pixels Pixel size (H x V) S 11639-01 S13496 Unit 2,048 4,096 pixels 14 x 200 Effective photosensitive area length Spectral response range Photosensitivity 7 x 200 µm 28.672 mm 200 to 1,000 nm 1,300 650 200 e- rms Video data rate (max.) 10 MHz 500 700 800 900 1000 400 Wavelength (nm) 500 600 700 600 800 900 1000 0.16 (Ta = 25 deg. C.) 0.16 • 16 300 400 Spectral response in the ultraviolet region (S11639-01, typical example) V/(lx s) Readout noise 300 Wavelength (nm) S11639-01 0.12 Photosensitivity (A/W) (A/W) Photosensitivity Parameter 200 S11639-01 0.12 0.08 Previous product S11639 Previous product S11639 0.08 0.04 0.04 0 200 0 220 240 260 280 300 200 220 Wavelength (nm) 240 260 280 300 Wavelength (nm) News 2016 Vol. 1 23 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca Lif M ed ELECTRON TUBE PRODUCTS Linear Type UV-LED Unit LIGHTNINGCURE LC-L5G L12990-2303 New High output 10,000 mW/cm2 UV-LED replacing metal-halide lamps The L12990-2303 delivers high power while still maintaining the features of our current product original LC-L5 including compact size, light weight and air cooling. These features have traditionally been a challenge for UV-LED light sources until now. The L12990-2303 offers a light intensity of 10,000 mW/cm2 which is about 7 times higher than our original product (LC-L5), making it suitable for high throughput applications that requires a high UV output. L12990-2303 Features High output 10,000 mW/cm2 Air cooling by fan • No exhaust duct installation and no chiller equipment required Compact and light weight Irradiance distribution Distance from beam exit point: 2 mm Irradiance (mW/cm2) 10000 Applications UV ink drying • UV inkjet printer • UV seal & label printing • UV offset printing UV coating agent drying • Printed circuit board protective film • IC card & IC tag coating • Blu-ray & DVD media coating • Furniture & building material (wall, floor, etc.)/woodworking applications Fluorescence excitation/scratch & flaw inspection lighting X direction 12000 LC-L5G 8000 7 times up 6000 4000 2000 0 -50 Conventional type LC-L5 -40 -30 -20 -10 0 10 20 30 40 50 Distance from irradiated center (mm) Y direction 12000 Distance from beam exit point: 2 mm Specification Unit Irradiation area*1 12 x 75 mm Maximum UV irradiance intensity*2 10,000 mW/cm2 Peak wavelength 385±5 nm Input voltage (DC) 48 V 600 W 20,000 h Power consumption (max.) LED design life*3 *1 Area subject to at least 80 % irradiance at distance of 2 mm. *2 Within irradiation area, at 2 mm of irradiation distance. *3 Average time until irradiance reaches 70 % of initial value. Please read also R & D Interview on page 8. 24 News 2016 Vol. 1 Irradiance (mW/cm2) Parameter LC-L5G 10000 Specifications 8000 7 times up 6000 4000 2000 0 -30 Conventional type LC-L5 -20 -10 0 10 Distance from irradiated center (mm) 20 30 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M ELECTRON TUBE PRODUCTS Deuterium Lamp for Photoionization L13301 New Higher output than PID lamps Compact deuterium lamp for photoionization In mass spectrometry and gas chromatography, photoionization or ionization by light is the focus of attention as a soft ionization technique that does not cause excessive damage to measurement samples. Up until now, PID (photo ionization detector) lamps and lasers have been used as the light sources for photoionization. However, PID lamps have insufficient output and lasers require designing a large, complicated system that is not easy to handle. The L13301 deuterium lamp optimized for soft photoionization will solve those problems. Features Capable of soft ionization High energy: 10.78 eV Long life Compact L13301 Schematic diagram of mass spectrometry Ionization Separation Detection Sample (Gas) Applications Mass spectrometry Environmental analysis • Gas detection L13301 Electron multiplier Ion Ion Ion MCP assembly or Phosphor Specifications Parameter Window material Specification MgF2 Spectral distribution Output stability at 230 nm Drift (max.) Fluctuation (p-p) (max.) Unit - 115 to 400 nm ±0.25 %/h 0.05 % Guaranteed life*1 at 230 nm 1,000 h Type number of power supply C10707 - *1Life end is defined as the time when the light output intensity at 230 nm falls to 50 % of its initial value or when output fluctuations exceed 0.05 % (p-p). News 2016 Vol. 1 25 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca Lif M ed ELECTRON TUBE PRODUCTS 20 W Xenon Flash Lamp Module L12745 Series New High output of 20 W High repetition operation The L12745 series is a 20 W xenon flash lamp module integrated with a regulated drive power supply and a lamp trigger socket. The light-emitting point of the lamp is preadjusted so the L12745 can be easily installed into equipment. Features High output power 20 W High stability High repetition operation Preadjusted light-emitting point 120 [20 W] L12745-01 (320 mJ) [10 W] L13046-01 (160 mJ) [5 W] L9455-01 (40 mJ) [2 W] L12336-01 (25 mJ) Relative light output (%) L12745 100series Emission 80 pulse waveform Relative light output (%) Applications Spectrophotometry Environmental analysis • Water quality and pollution analysis • Air pollution analysis • Laboratory testing • Urine analysis • Blood analysis Semiconductor inspection Operating conditions Main discharge voltage L12745/L13046-01: 1,000 V L9455/L12336-01: 600 V [20 W] L12745-01 Measurement distance: (320 20 cmmJ) [10 W] L13046-01 (160 mJ) [5 W] L9455-01 (40 mJ) [2 W] L12336-01 (25 mJ) 120 60 100 40 80 20 600 0 1 2 0 1 2 Operating conditions Main discharge voltage L12745/L13046-01: 1,000 V L9455/L12336-01: 600 V 3 4 5 Measurement distance: 20 cm Time (µS) 40 6 20 Specifications L12745 Light output spectral range -02 185 to 2,000 Main discharge voltage variable range 300 to 1,000 Main discharge capacitance -01 0.64 Maximum average input (continuous) Guaranteed life*1 *1 20 W operation, at 791 V, 0.64 μF, 100 Hz 391 Unit 5 6 V 0.1 μF Life characteristics W 1 % CV 1x109 flashes 781 4 nm 20 Light output stability (typ.) Maximum repetitive emission frequency 0.32 -03 3 Time (µS) 1,000 120 110 Hz 100 90 Relative irradianec (%) Parameter 0 80 70 Guaranteed life range 120 60 110 50 100 40 Relative irradianec (%) 90 30 80 20 Average input: 20 W 70 10 600 50 0 Guaranteed life range 0.5x109 1x109 Number of flashes 40 1.5x109 2x109 1.0x10 flashes = 2,777 h with 100 Hz operation 9 30 20 26 News 2016 Vol. 1 Average input: 20 W 10 0 0 0.5x109 1x109 1.5x109 2x109 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M ELECTRON TUBE PRODUCTS Excimer Lamp Light Source "FLAT EXCIMER " EX-86U L13129 TM New Modification, cleaning and bonding with light Unlike the excimer lamps of other manufacturers, our FLAT EXCIMER light source uses a flat lamp that ensures uniform irradiation. Processing by light (vacuum UV light at 172 nm) does not cause damage to objects, dust particle generation, or processing unevenness, which are usually caused by corona / plasma discharge methods. Compared to our current in-line type (EX-400), the L13129 is more compact, lightweight and contains a power supply so that it can be easily installed almost anywhere without installation hassles. These features make it simple to incorporate the L13129 into existing production lines. L13129 Features No damage to objects No generation of dust particles Uniform irradiation Instantaneous ON/OFF Long life Less flickering Applications Surface modification • Pretreatment for adhesives (adhesive strength improvement) • Coating/printing adhesion improvement Material dry cleaning • Silicon wafer and glass substrate cleaning • Removal of organic films/adhesive residues Bonding of microfluidic devices Irradiation area Installation example Installation example EX-86U AC 100 V to AC 240 V Specifications Parameter Specification Unit Emission wavelength 172 nm Irradiance*1 50 mW/cm2 2,000 h 86 x 40 mm Lamp design life Irradiation area (W x H) *1Value calculated on the assumption that the irradiance is measured with a Hamamatsu UV power meter C9536/H9535-172 placed in the immediate vicinity of the lamp. Ozone exhaust duct Ozone is formed in air irradiated with vacuum UV light, so we ask that customers install exhaust air ducts that enclose the unit as shown in the example. The E12685 ozone decomposition unit (option) requiring no exhaust air duct can be used under certain conditions, depending on the installation environment and conditions. News 2016 Vol. 1 27 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca Lif M ed ELECTRON TUBE PRODUCTS Micro PMT Photon Counting Head H12406/-01 New Contains the world's smallest*, thinnest and lightest photomultiplier tube Capable of photon counting measurement 38 mm R The H12406 and H12406-01 contain the world's smallest photomultiplier tube, "micro-PMT" together with a high voltage power supply and a photon counting circuit. Photon counting measurement can be performed by supplying +5 V. Two kinds of photocathodes (bialkali and multialkali) are selectable. The cubic volume is about 1/2 compared to a metal package photomultiplier tube (H10682), so will help reduce equipment size. Features Low voltage (+5 V) operation 15 mm 30 mm H12406/-01 Count sensitivity characteristics Count sensitivity characteristics Applications Portable medical devices Portable environmental measurement devices Hygiene monitoring system, etc. 10 6 H12406-01 * As of Oct. 2015, based on our research Specifications Parameter Spectral response range H12406 H12406-01 300 to 650 300 to 850 Effective photocathode area (X x Y) 3x1 Input voltage Count linearity*1 Dark count (typ.) Pulse-pair resolution Output pulse width Output pulse height (typ.)*2 *1 Random pulse, at 10 % count loss *2 Input voltage +5 V, load resistance 50Ω Unit nm mm +5 V 5x106 s-1 10 100 Count sensitivity (s-1･pW-1) 10 5 H12406 10 4 s-1 20 ns 10 ns +2.2 V 10 3 200 300 400 500 600 700 Wavelength (nm) 28 News 2016 Vol. 1 800 900 1000 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M ELECTRON TUBE PRODUCTS Photomultiplier Tube Assembly H13175U-01/20/110 New Head-on photomultiplier tube assembly with the shortest overall length Ø 17.5 mm The H13175U-01/20/110 are photomultiplier tube assemblies using a TO-8 metal-package photomultiplier tube R9880 integrated with a voltage divider circuit. The overall length of these photomultiplier tube assemblies is shorter than the length of the R9880U combined with a D-type socket assembly, so helps reduce equipment size. Features Compact and light weight: 7.5 g High gain 19.5 mm H13175U-01/20/110 Spectral response Applications Portable medical devices Portable environmental measurement devices Hygiene monitoring system, etc. 1000 -01 -20 -110 Specifications Parameter H13175U-01 Spectral response range 230 to 870 H13175U-20 H13175U-110 230 to 920 230 to 700 φ8 Effective photocathode area Unit nm mm Max. supply voltage 1,100 V Voltage divider resistance 3.46 MΩ Max. voltage divider current Cathode luminous sensitivity (typ.) 0.32 200 mA 105 μA/lm 1 nA 2 x 106 Gain (typ.)*1 Dark current (typ)* 500 1 Rise time 1 10 0.57 ns Cathode radiant sensitivity (mA/W) Quantum efficiency (%) 100 10 1 *1 Supply voltage 1,000 V Cathode radiant sensitivity Quantum efficiency 0.1 100 200 300 400 500 600 700 800 900 1000 Wavelength (nm) News 2016 Vol. 1 29 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif M ed ELECTRON TUBE PRODUCTS High Speed HPD (Hybrid Photo Detector) Assembly H13223-40 New Photodetector with high-speed response, high sensitivity, and low afterpulsing HPD is a unique photomultiplier tube that contains a semiconductor device in the electron tube (vacuum tube). In a HPD, photoelectrons from the photo cathode are accelerated to directly impinge on the semiconductor device where the photoelectrons are multiplied. This electron multiplication is efficient and generates less noise. The H13223-40 HPD has connectors to allow safe and easy connection to any length of cable. We also provide the C12929 power supply specifically designed for the HPD, which outputs a high voltage and reverse bias voltage necessary to operate a HPD. The high voltage and reverse bias voltage can also be externally controlled by input of control voltage. H13223-40 Features Fast time response Low afterpulsing High sensitivity Excellent time resolution Applications Laser scanning microscope FCS (fluorescence correlation spectroscopy) LIDAR (light detection and ranging) TCSPC (time-correlated single photon counting) Left: HPD assembly H13223-40, right: Power supply C12929 Specifications Parameter H13223-40 Unit Spectral response 300 to 720 nm Photocathode material Effective photocathode area GaAsP - φ3 mm Quantum efficiency at 500 nm 45 % T.T.S.*1 90 ps Rise time 400 ps Gain (typ.) 1.2 x 105 - *1At the single photon state and the full illumination on photocathode, specified as FWHM (Full Width at Half Maximum). These values include the jitter of the electronics of about 30 ps. Specifications Parameter High voltage Diode bias voltage 30 News 2016 Vol. 1 C12929 Unit Max. output voltage -8.5 kV Max. output current 16 μA Max. output voltage ±500 Vdc Max. output current 500 μA nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M ELECTRON TUBE PRODUCTS Head-on Type Photomultiplier Tube/Assembly R12421-300 and H12690-300 New Enhanced green sensitivity at 500 to 700 nm The R12421-300 is a 13 mm (1/2 inch) diameter head-on photomultiplier tube with enhanced green sensitivity (quantum efficiency is 14 % at 550 nm while that of the current product is 8 %). The H12690-300 is a photomultiplier tube assembly incorporating the R12421-300, together with voltage divider circuit, HA treatment and magnetic shield. Features High quantum efficiency: 14 % at 550 nm Compact Low dark counts Good PHD and plateau characteristics 43 mm Ø 13.5 mm Left: R12421-300, right: H12690-300 Quantum efficiency Applications Photon counting • Hygiene monitoring • Clinical testing • Fluorescence/bioluminescence observation Scintillation counting • Survey meters 45 R12421-300 Conventional type (R12421) 40 35 Specifications Parameter Spectral response range Photocathode type Specification 300 to 700 Unit nm Extended green bialkali - 14 % φ10 mm Quantum efficiency at 550 nm Effective photocathode area Gain (typ.)*1 Dark counts (typ.)*1 *1 Supply voltage 1,000 V, at 25 deg. C. 2 x 106 - 400 s-1 Quantum efficiency (%) 30 25 20 15 10 5 0 200 300 400 500 600 700 800 Wavelength (nm) News 2016 Vol. 1 31 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca M Lif ed ELECTRON TUBE PRODUCTS Side-on Type Photomultiplier Tube R13194 New Solar-blind spectral response The R13194 is a 13 mm (1/2 inch) side-on photomultiplier tube which offers around 5 times improved solar blindness, compared to a conventional product (R10825). The anode radiant sensitivity ratio (121 nm / 300 nm) is increased from 1,500 to 8,500, and so helps to enhance equipment performance. Features Solar-blind spectral response High stability in VUV region Low dark current High VUV quantum efficiency R13194 Spectral response Spectral response Applications Emission spectroscopic analysis Plasma emission measurement 100 R13194 Conventional type (R10825) Specifications Specification 115 to 195 Unit nm Cathode radiant sensitivity at 121 nm 25.5 mA/W Anode radiant sensitivity at 121 nm*1 1.0 x 105 A/W 26 % Quantum efficiency at 121 nm Anode sensitivity ratio 121 nm / 300 nm*1 8,500 - Anode dark current*1 0.05 nA 3.9 x 106 - Gain (typ.)*1 *1 Supply voltage 1,000 V, at 25 deg. C. Cathode radiant sensitivity (mA/W) Parameter Spectral response range 10 1 0.1 0.01 0.001 100 150 200 Wavelength (nm) 32 News 2016 Vol. 1 250 300 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca Lif ed M ELECTRON TUBE PRODUCTS Side-on Type Photomultiplier Tube R13456 New Extended near-infrared sensitivity The R13456 is a 28 mm (1-1/8 inch) diameter side-on photomultiplier tube. The limiting wavelength in the near infrared region is extended from 900 nm, compared to our current product (R928), to 980nm and sensitivity at 900 nm is 100 times higher than the R928. This makes the R13456 ideal for precision photometry, where high sensitivity in the near-infrared region is required. Features Wide spectral response High sensitivity at 900 nm (100 times higher than conventional type) R13456 Applications Spectrophotometer (fluorescence, UV-VIS-NIR) Microscope Atomic absorption spectrophotometer NOx monitor Specifications Parameter Spectral response range Specification 185 to 980 Unit nm Cathode luminous sensitivity 280 μA/lm Anode luminous sensitivity*1 2,800 A/lm 5 nA 7.3 mA/W 1 % Anode dark current*1, 2 Cathode radiant sensitivity at 900 nm Spectral response Quantum efficiency at 900 nm R13456 10 1 20 R928 0.1 0.01 100 200 300 400 500 600 700 800 900 1000 Wavelength (nm) R13456 10 Cathode radiant sensitivity (mA/W) Cathode radiant sensitivity (mA/W) 100 R928 1 *1 Supply voltage 1,000 V, at 25 deg. C. *2 After 30 min storage in darkness 100 times 0.1 0.01 700 Extended to 980 nm 800 900 1000 Wavelength (nm) News 2016 Vol. 1 33 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca Lif M ed ELECTRON TUBE PRODUCTS Photomultiplier Tube Module H13320 Series New Low power consumption, battery operation available The H13320 series is a 13 mm (1/2 inch) side-on photomultiplier tube module with a high-voltage power supply circuit and output cables. The current consumption is reduced to about one-eighth that of the currently available product (H9305), making the H13320 series ideal for portable instruments. Features Low power consumption Battery operation available (+3 V) Applications Portable medical devices Portable environmental measurement devices, etc. H13320 series Spectral response 1000 Specifications Input voltage Max. input current*1 Specification 3.7 x 13 Unit mm +3 to +5 V 2.7 mA Max. output signal current 10 μA Ripple noise*2 (p-p) (max.) 0.5 mV Settling time*3 14 s *1 Input voltage +5 V, control voltage +1.0 V, operated in darkness *2 Control voltage = +1.0 V *3The time required for the output to reach a stable level following a change in the control voltage from +1.0 V to +0.5 V. -02 -03 10 -05 -01 1 0.1 100 -04 200 300 400 500 600 Wavelength (nm) 34 News 2016 Vol. 1 -13 100 Cathode radiant sensitivity (mA/W) Parameter Effective photocathode area (X x Y) 700 800 900 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M ELECTRON TUBE PRODUCTS Photon Counting Head H13467 Series New Low power consumption, excessive light detection output 60 The H13467 series is a square-shaped photon counting head that contains a 25 mm (1 inch) diameter head-on photomultiplier tube, high-voltage power supply circuit and photon counting circuit. The H13467 series also includes a wide-band circuit to deliver high count rate performance. The high voltage for the photomultiplier tube and the discriminator setting are preadjusted to optimal levels, so photon counting measurement can start just by supplying +5 V. The H13467 can be easily installed in equipment by screw, due to its square-shaped case and compact overall length. Features Low power consumption Excessive light detection output mm 43 mm 33 mm H13467 Count sensitivity Applications Blood analyzer 106 -02 Specifications -03 H13467-01 H13467-02 300 to 650 Effective photocathode area Count linearity*1 Input voltage Dark count (typ.) H13467-03 300 to 850 φ22 mm 6 x 106 s-1 +5 15 Unit nm 60 V 5000 S-1 Pulse-pair resolution 18 ns Output pulse width 9 ns +2.2 V Output pulse height (typ.)*2 105 Count sensitivity (s-1. pW-1) Parameter Spectral response range -01 104 *1 Random pulse, at 10 % count loss. *2 Input voltage +5 V, load resistance 50Ω 103 200 300 400 500 600 700 800 900 Wavelength (nm) News 2016 Vol. 1 35 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca M Lif ed ELECTRON TUBE PRODUCTS Wide Dynamic Range Photomultiplier Tube Unit H13126, C12918 Series New Photomultiplier tube unit that can measure with wide dynamic range up to 8 digits This unit is capable of measuring light levels over a wide dynamic range of up to 8 orders of magnitude, by simultaneously extracting a digital output (photon counting) for detecting low level light and an analog output for detecting higher light levels visible to the human eye. This unit is designed to connect to a PC via a USB interface. Features Measurement from single photon region to analog region Wide dynamic range measurement without changing photomultiplier gain USB interface for connection to PC for measurement and data acquisition Applications Blood analyzer Luminometer Fluorescence measurement device Semiconductor inspection system MTP reader LIDAR (light detection and ranging) Spectral response range 300 to 650 nm Photon counting dark count (typ.)*1 Below 100 s-1 Bandwidth (-3 dB) DC to 50/DC to 500 kHz Output voltage*2 0 to +10 V C12918 series 1 μs/10 μs Unit - *1 After 3 hours storage in darkness. *2 Load resistance 1 kΩ. Parameter Counter gate time Single photon area Analog area Wide dynamic range photomultiplier tube module 8 digits range light intensity Single photon area 8 digits Analog arealight intensity can be range measured by 1 unit canintensity be measured by 1 unit 8 digits range light can Photomultiplier be measured tube by 1(Photon unit counting type) Photomultiplier tube (Photon counting type) Photomultiplier tube (Photon between countingnumber type) of incident photon and irradiance and illuminance Correlation Correlation between when the light is λ = number 555 nmof incident photon and irradiance and illuminance when the light is λ = 555 nm Correlation between number of incident photon and irradiance and illuminance when the light is λ = 555 nm News 2016 Vol. 1 Measurement example: afterglow characteristics of P43 phosphor 10000 10000 10000 1000 100 Capable of continuous measurement for 2 ms to 3 ms or more Measures measurement a wide range from Capable of continuous for 2 signals ms to 3 ms or more on oscilloscope low from level light signals Measures adown wide to range signals on oscilloscope low level light signals Capable of continuous measurement for 2 ms to 3down ms ortomore Measures a wide range from signals 1000 1000on oscilloscope down to low level light signals Count/1 Count/1 msms Wide dynamic photomultiplier module Room light Full moon tube 0 mag star range Wide dynamic rangearea photomultiplier Single photon Analogtube area module 36 Unit mm Count/1 ms uminance ) H13126 φ22 Analog (Amplifier output) Number of 100 102 104 106 108 1010 1012 Number of incident photon 100 102 104 106 108 1010 1012 2• incident photon [pcs/(mm s)] 0 2• 2 4 6 8 10 12 -18 -16 -14 -12 -10 -8 10 s)] 10 [pcs/(mm 10 10 10 10 10 10 10 10 10 10 10 Irradiance 10-18 10-16 10-14 10-12 10-10 10-8 Irradiance (W/mm2) -16 -14 -12 -10 -8 2 -18 10 10 10 10 10 (W/mm 10 ) 10-10 10-8 10-6 10-4 10-2 100 102 Illuminance 10-10 10-8 10-6 10-4 10-2 100 102 Illuminance (lx) -10 -8 -6 -4 -2 0 2 (lx)10 10 10 10 0 mag star 10 10 Room light Full 10 moon Room light Full moon 0 mag star adiance W/mm2) Specifications Parameter Photocathode effective area Light intensity umber of cident photon cs/(mm2•s)] Left: Wide dynamic range photomultiplier tube module H13126 Right: Data acquisition unit C12918 series 100 100 10 10 Analog measurement 10 1 1 Time (1 ms/div.) Time (1 ms/div.) 1 Time (1 ms/div.) Single photon counting measurement Analog Analog measurem measurem Single pho Single pho counting counting measurem measurem nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M ELECTRON TUBE PRODUCTS High Voltage Power Supply Module C12766-12 New Approved to UL 60601-1 -1,500 V/30 mA output The C12766-12 provides a maximum output of -1500 V at 30 mA which is the highest output current among our high voltage power supply modules. The C12766-12 allows operation of multiple photomultiplier tubes with a single unit, making it ideal for PET and high energy physics experiments. The C12766-12 is our first high voltage power supply to be approved to UL 60601-1 Medical Electrical Safety Standard. Features Approved to UL 60601-1 Medical Electrical Safety Standard High efficiency and less heat generation High stability C12766-12 Efficiency characteristics 100 Applications Photomultiplier tube operation for PET diagnostic system Photomultiplier tube operation for high energy physics experiments 90 80 Specifications Parameter Maximum output voltage Specification -1,500 Unit V Maximum output current 30 mA Ripple/noise (p-p) (Typ.)*1, 2 75 mV Line regulation (Typ.)*1, 2, 3 ±0.01 % ±0.01 % +24±1.2 V Units protected against reversed power input, reversed/excessive controlling voltage input, continuous overloading/short circuit in output - Load regulation (Typ.)*1, 4 Input voltage Protective functions Efficiency (%) 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 Relative output (%) 70 80 90 100 (45 W) *1 at maximum output voltage *2 at maximum output current *3 against ±1.2 V input change *4 against 0 % to 100 % load change News 2016 Vol. 1 37 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif M ed SYSTEMS PRODUCTS Optical NanoGauge Thickness Measurement System C13027-02 New 10 nm to 100 µm thin film high speed measurement The Optical NanoGauge Thickness measurement system is a noncontact film thickness measurement system utilizing spectral interferometry. This new model supports connections to a PLC and and can be easily installed into production equipment. Features Supports PLC connections Shortening of cycle time (max. 200 Hz) Capable of measuring 10 nm thin films Simultaneously measures thickness and color Downsized (footprint reduced by 30 % compared to C12562) Covers broad wavelength range (400 nm to 1,100 nm) Simplified measurement is added to the software Can measure both adverse side and reverse side of a film Precise measurement of fluctuating film Analyze optical constants (n, k) Example: In-line measurement Example: In-line measurement settings for film coating system C13027-02 settings for film coating system Optical NanoGauge Thickness measurement system C13027/C12562 Optical MicroGauge Thickness measurement system C11011 Multipoint NanoGauge Thickness measurement system C11295 Cutting, Roll-up Coating layer Plastic film, Bonding layer, ITO, Wet film Drying, Curing Coating, Deposition (PVD/CVD) Let-off 38 News 2016 Vol. 1 Measurement after drying and curing Film thickness, Coated layer thickness, Total thickness nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca Lif ed M SYSTEMS PRODUCTS NanoZoomer S210 Digital Slide Scanner C13239-01 New A new NanoZoomer for whole slide imaging The newly developed NanoZoomer S210 delivers high performance, and is capable of handling large numbers of slides, at a lower cost. This was achieved without sacrificing the high image quality and equipment reliability, which has made our NanoZoomer series popular with many users around the world. Features 210 slide capability Simple operation High performance C13239-01 Applications Connecting with laboratory information system and electronic medical records Consultation Slide conferences, CPC (clinical pathology conferences) onnecting with laboratory information systems C Connecting Connecting with with laboratory laboratory information information system system and electronic medical records Consultation and and electronic electronic medical medical records records Slide conferences, CPC Slide Slide conferences, conferences, CPC CPC (clinical pathology conferences) Consultation Consultation (clinical (clinical pathology pathology conferences) conferences) Major Major hospitals hospitals work work together together along along with with organ organ specialists specialists to to support support accurate accurate pathological pathological diagnosis. diagnosis. NanoZoomer NanoZoomer S210 S210 Same Same image image data data can can be be shared shared with with many many persons persons for for smooth smooth and and easy easy exchange exchange of of opinions. opinions. Image Image database database laboratory laboratory information information system system Hospital Hospital LAN LAN Lung Lung specialists specialists Mammary Mammary gland gland specialists specialists Pancreas Pancreas specialists specialists Liver Liver specialists specialists Electronic Electronic medical medical records records Stomach Stomach specialists specialists Stores Stores patient patient medical medical treatment treatment information information along along with with images! images! Request Request for for consultation consultation News 2016 Vol. 1 39 SYSTEMS PRODUCTS Discover the Breakthrough Scientific CMOS camera with 82 % peak quantum efficiency. Available NOW from Hamamatsu Scientific breakthroughs rarely come from giant steps. Rather, it’s a continuous progression of small steps and astute application of those differences that enables advances. From its introduction the ORCA-Flash4.0 has challenged the status quo of imaging and has undergone a series of useful enhancements. The most recent is perhaps the most exciting; a notable increase in the ability to detect photons. If you have not yet experienced the ORCA-Flash4.0 V2 sCMOS, now is the time. What breakthrough will you make with your extra photons? 40 News 2016 Vol. 1 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l eS i ca Lif ed M SYSTEMS PRODUCTS InGaAs Camera C12741-03, C12741-11 New High sensitivity in the near infrared region from 950 nm to 1,700 nm The C12741-03 and the C12741-11 are InGaAs cameras with high sensitivity in the near infrared region. They can be used in a wide range of applications including silicon wafer inspection, laser beam alignment and evaluation of solar cells. Features High sensitivity in the near infrared region from 950 nm to 1,700 nm 640 × 512 pixels C12741-03 C12741-03 Simultaneous output both analog (EIA) and USB 3.0 ports Frame rate: 60 frames/s C12741-11 Low-dark current with -70 deg. C. peltier cooling requires (water-cooling) Air-cooling / water-cooling (interchangeable) Interface: Camera Link Frame rate: 7 frames/s Applications Internal inspections of silicon wafers and devices Evaluation of solar cells Evaluation and analysis of optical communication devices EL/PL image acquisition C12741-11 Spectral response C12741-11 100 80 80 Quantum efficiency (%) Quantum efficiency (%) C12741-03 100 60 40 20 0 900 1000 1100 1200 1300 1400 Wavelength (nm) 1500 1600 1700 1800 -70 deg. C. -60 deg. C. 60 40 20 0 800 900 1000 1100 1200 1300 1400 1500 1600 Wavelength (nm) News 2016 Vol. 1 41 LASER PRODUCTS NIRO -200NX DP ® Quick and easy probe attachment with soft and lightweight, disposable probes Simply peel off the outer seal and the probes are ready for use. Soft and light probe Soft and lightweight probes for user friendly attachment. Smaller size probes available, designed to attach to smaller areas and compatible for simultaneous use with a monitor such as BIS. Two types of probes available depending on the patients (adults and children). S-type probe L-type probe Hamamatsu Photonics Deutschland GmbH Arzberger Str.10, D-82211 Herrsching, Germany Telefon: +49 (8152) 375-201, Telefax: +49 (8152) 375-272 42 News 2016 Vol. 1 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M LASER PRODUCTS Fiber Output Laser Diode L13181-01 New Fiber output laser diode with high environmental durability The L13181-01 is a fiber output laser diode with high optical output (10 W) and high conversion efficiency (55 %) achieved by our unique device structure. The L13181-01 is an ideal high-luminance light source in a wide range of fields, including material processing, pumping of fiber lasers and solid-state lasers, medical treatment and chemical analysis. Difference from conventional product Package design emphasizes environmental durability. L13181-01 Features 915 nm emission wavelength High output: 10 W High conversion efficiency: 55 % or more 0.15 NA, 105 μm core optical fiber Fiber coupled Applications Direct condensing processing Fiber laser and solid-state laser pumping Medical treatment Chemical analysis Specifications Parameter Output power at fiber exit end Symbol Φef Value 10 W Notes Operating current Iop 11 A (typ.) Operating voltage Vop <2 V Emission wavelength λc 915 nm ±20 nm Guided wave longitudinal mode - Multimode Core diameter - 105 μm MM-S105 NA - 0.15 Equivalent to 125-15 A Jacket diameter - Φ0.25 mm Bare optical fiber Contact Hamamatsu for other wavelengths News 2016 Vol. 1 43 New Fiber output laser diode ideal for oxygen measurement The L13421-01 is a semiconductor laser diode ideal for oxygen analysis. It delivers a stable oscillation wavelength and narrow linewidth via an optimized distributed feedback structure (DFB). Fiber output makes optical branching and lens coupling simple and easy. If any particular wavelength is required please feel free to contact us. (Designable center wavelength range is: 759 nm to 763 nm) Difference from conventional product We succeeded in producing a highly reliable 760 nm laser diode which was considered a very difficult task up to now. L13421-01 Features 760 nm DFB pigtail Oscillation wavelength: 760.6 nm Wavelength linewidth: 13 MHz or less (typical value) Current dependence of wavelength shift: Approx. 0.004 nm/mA (typical value) LD temperature dependence of wavelength shift: Approx. 0.05 nm/deg. C. (typical value) Monitor PD/TEC inside Applications Light source for oxygen monitor Medical instrument Specifications Parameter Peak emission wavelength Symbol λp Min. 759.6 Typ. 760.6 Optical output Φe 3 Operating voltage Vop - Max. 761.6 Unit nm 7 - mW - 2 V Emission mode - Single - Mode field diameter - 4.5 to 5.5 µm Conditions: Iop = 100 mA; Top(c) and Top(ld) = 25 deg. C. 44 News 2016 Vol. 1 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Fiber Output Laser Diode L13421-01 Dr u l i ca eS Lif M ed LASER PRODUCTS nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M LASER PRODUCTS CW Laser Diode L13421-04 New High output power semiconductor laser ideal for oxygen measurement The L13421-04 is a semiconductor laser diode ideal for oxygen analysis. It de livers a stable oscillation wavelength and narrow linewidth by optimizing the distributed feedback structure (DFB). If any particular wavelength is required please feel free to contact us. (Designable center wavelength range is: 759 nm to 763 nm) Difference from conventional product We succeeded in producing a highly reliable 760 nm laser diode which was considered a highly difficult task up to now. L13421-04 Features 760 nm DFB Oscillation wavelength: 760.6 nm Wavelength linewidth: 13 MHz or less (typical value) Current dependence of wavelength shift: Approx. 0.005 nm/mA (typical value) LD temperature dependence of wavelength shift: Approx. 0.06 nm/deg. C. (typical value) Applications Light source for oxygen monitor Medical instrument Specifications Parameter Operating current Peak emission wavelength Beam spread angle Parallel Vertical Threshold current Symbol Condition Min. Typ. Max. Unit Iop Φe = 20 mW - 95 115 mA λp Φe = 20 mW 759.6 760.6 761.6 nm 6 9 12 θ⊥ Φe = 20 mW FWHM 18 21 24 Ith - - 65 85 θ// ° mA Conditions: Top(c) = 25 deg. C. News 2016 Vol. 1 45 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif M ed LASER PRODUCTS CW Laser Diode L13400, L13402 PRELIMINARY Laser diode that delivers both high optical output and high conversion efficiency The L13400 and L13402 are single emitter laser diodes achieving both high optical output power (12 W) and high conversion efficiency (L13400: 59 %, L13402: 55 %) by means of our unique device structure. These laser diodes use an F-mount package with a COS (Chip on submount) assembled on a flat open heatsink. This ensures good thermal contact with the heatsink and delivers high output power and high-reliability operation. Difference from conventional product These laser diodes offer the world’s highest optical output and conversion efficiency levels. Features 915 nm, 976 nm F-mount High output: 12 W High conversion efficiency: 59 % (L13400) 55 % (L13402) Applications Direct condensing processing Fiber laser and solid-state laser pumping Medical treatment Chemical analysis Specifications Parameter Symbol Condition Value L13400 L13402 Unit Threshold current Ith - 0.6 0.6 A Operating current Iop 12 W 12 12.3 A Vf 12 W 1.7 1.75 V 10 10 25 25 Operating voltage Beam spread angle Parallel (FWHM) Vertical θ// θ⊥ 12 W ° Peak wavelength λp 12 W 915 976 nm Emitter stripe width W - 90 90 μm 46 News 2016 Vol. 1 L13400, L13402 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M LASER PRODUCTS New Quantum Cascade Laser An optimum mid-infrared laser diode for molecular gas analysis Quantum Cascade Lasers (QCLs) are semiconductor lasers that offer peak emission in the mid-IR range (4 µm to 10 µm). They have gained considerable attention as a new light source for mid-IR applications such as molecular gas analysis. Difference from conventional product Our lineup of QCLs now includes new products which emit light at long and short wavelengths. DFB-CW type Features Mid-IR laser (4 μm to 10 μm) Compact, lightweight Applications IR molecular spectroscopy Specifications Type No. Wavelength Wave number Target gas New L12004-2310H-C 4.33 μm 2,310 cm-1 CO2, CO2 isotope L12004-2209H-C 4.53 μm 2,209 cm-1 N2O L12004-2190H-C 4.57 μm 2,190 cm-1 N2O, CO L12005-1900H-C 5.26 μm 1,900 cm-1 NO L12006-1631H-C 6.13 μm 1,631 cm-1 NO2 New L12007-1392H-C New L12007-1354H-C 7.18 μm 1,392 cm-1 SO3 7.39 μm 1,354 cm-1 L12007-1294H-C 7.73 μm 1,294 cm-1 DFB-Pulsed type SO2 CH4/13CH4 12 Specifications Type No. Wavelength Wave number Target gas L12014-2231T-C 4.48 μm 2,231 cm-1 N2O, CO, CO2 L12015-1901T-C 5.26 μm 1,901 cm-1 NO L12016-1630T-C 6.13 μm 1,630 cm-1 N2O L12017-1278T-C 7.82 μm 1,278 cm-1 CH4, N2O New L12020-0993T-C 10.07 μm 993 cm-1 NH3 News 2016 Vol. 1 47 nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif M ed LASER PRODUCTS Fiber Output Laser Diode Bar Module L13705-20-940DA Works with cooling units not requiring deionized water, making laser processing easy The L13705-20-940DA is a compact, water-cooled laser diode bar module that boasts a high power of 200 W. This module uses distilled water for cooling and does not require deionized water. It can operate even under tough conditions such as low water flow, low water pressure, cooling water temperature of 25 deg. C. and is therefore easy to handle and use. Difference from conventional product It does not require chillers using deionized water. L13705-20-940DA Features High cooling efficiency Compact high-reliability package Allows cooling with distilled water (needs no deionized water) Applications Solid state laser pumping Annealing Laser direct processing, etc. Specifications Parameter Value Radiant flux 200 W (CW) Laser class General specifications Wavelength Dimensions (W x H x D) Weight Applicable fiber core diameter Other specifications N. A Coolant 48 News 2016 Vol. 1 Class 4 940 nm ± 20 nm Approx. 120 mm x 64 mm x 210 mm Approx. 3.7 kg φ0.8 mm or φ0.6 mm 0.2 ± 0.02 Distilled water New nc e gD isc ov M ery ea su rem en An t al y tic al Se mi co nP ro Op d. tic al Co mm Se cu s rit y In d us try ND In s pe ct i Ac on ad em ic Re s. ci e Dr u l i ca eS Lif ed M LASER PRODUCTS Pulsed Laser Diode Bar Module L13713-25P940 New Rear water cooling ensures high luminance and simplifies installation The L13713-25P940 laser diode bar module features a light weight, compact size and easily mounts into equipment. Laser diodes are eco-friendly since they deliver higher emission efficiency at lower energy, reducing running costs. The L13713-25P940 can also be designed for fast axis collimation as an option on request. Difference from conventional product Drastic boost in optical output from 100 W to 320 W per bar. L13713-25P940 Features High optical power: 10 kW High stability Long life Light weight, compact Applications Solid state laser pumping Fiber laser excitation Specifications (tw = 400 μs, fr*1 = 25 Hz, temperature of coolant: 20 deg. C., flow rate: 1.0 L/min) Parameter Symbol Conditions Min. Typ. Max. Operating current Iop φ ep = 8.0 kW - 310 330 A Center wavelength λc φ ep = 8.0 kW 935 940 945 nm Spectral radiation half bandwidth Δλ FWHM, φ ep = 8.0 kW - 5 8 nm φ ep = 8.0 kW - V Forward voltage Vop Beam spread Parallel angle Vertical θ// Lasing threshold current Ith θ⊥ 1/e2, Ifp = 300 A*2 - - - 45 60 15 20 58 68 33 40 Unit ° A *1 Repetition frequency *2Measured with one bar (tw = 1 ms, fr = 10 Hz, Top(c) = 25 deg. C.) News 2016 Vol. 1 49 Global Exhibitions 2016 Europe April 2016 Photonics Europe April 5-6 2016, Bruxelles, Belgium Photonex London Roadshow April 11 2016, London, England USA April 2016 Advances & Breakthroughs in Calcium Signaling April 7-9 2016, Honolulu, HI BIOMEDevice April 13-14 2016, Boston, MA AACR April 16-20 2016, New Orleans, LA SPIE Defense & Commercial Sensing April 19-21 2016, Baltimore, MD ISA Symposium April 24-28 2016, Galveston, TX May 2016 The Vision Show May 3-5 2016, Boston, MA Radtech May 16-18 2016, Chicago, IL Pathology Informatics May 23-26 2016, Pittsburgh, PA June 2016 ASMS June 5-9 2016, San Antonio, TX CLEO June 7-9 2016, San Jose, CA CYTO June 11-15 2016, Seattle, WA July 2016 Semicon West July 12-14 2016, San Francisco, CA Digital Pathology Congress USA July 14-15 2016, Philadelphia, PA August 2016 ICHEP Aug 7-10 2016, Chicago, IL IMSC Aug 20-26 2016, Toronto, ON BSCB-BSDB Spring Meeting April 11-12 2016, Coventry, England Swiss Biotech Day April 12 2016, Basel, Switzerland Analytika April 12-14 2016,Moscow, Russia MINALOGIC April 14 2016, Grenoble, France MOST Forum April 18-19 2016, Stuttgart, Germany Affidabilità & Tecnologia 2016 April 20-21 2016, Torino, Italy ENOVA June 8-9 2016, Angers, France Photonex Scotland Roadshow June 8 2016, Edinburgh, Scotland 3rd FDSS Workshop June 8 2016, Barcelona, Spain 12th FDSS Users Meeting June 9 2016, Barcelona, Spain 29ème Congrès AFH June 9-10 2016, Paris, France WCNDT June 13-17 2016, Munich, Germany Connected Car & Mobility Expo June 29-30 2016, Düsseldorf, Germany July 2016 AKL April 27-29 2016, Aachen, Germany OPTIQUE July 4-7 2016, Talence, France 24. Jahrestagung der ADH April 29-May 1 2016,Hildesheim, Germany 11ème Congrès Européen de Neuropathologie July 6-9 2016, Bordeaux, France May 2016 E-MRS May 2-6 2016, Lille, France Diamond Light Source Monthly Supplier Exhibition May 9 2016, Didcot, England Sensor und Test May 10-12 2016, Nuremberg, Germany ICTON 2016 July 10-14 2016, Trento, Italy Frontiers in BioImaging July 14-15 2016, London, England OSA July 25-28 2016, Heidelberg, Germany August 2016 Analytica May 10-13 2016, Munich, Germany European Microscopy Congress - EMC Aug 28-Sept 2 2016,Lyon, France DigitalPath Europe May 18-19 2016, London, England Light Sheet Fluorescence Microscopy 2016 Aug 31-Sept 3 2016,Sheffield, England Vårmöte Patologi May 18-19 2016, Karlstad, Sweden Pathologie Kongress 2016 May 19-21 2016, Berlin, Germany SPS IPC Drives Italia 2016 May 24-26 2016, Parma, Italy 13th European Congress on Digital Pathology May 25-28 2016,Berlin, Germany DRUPA May 31-June 11 2016,Düsseldorf, Germany June 2016 September 2016 RICH 2016 Sept 5-9 2016, Bed, Slovenia Photon16 Sept 6-7 2016, Leeds, England Sindex Sept 6-8 2016, Bern, Switzerland E16 Sept 6-8 2016, Odense, Denmark ENOVA Sept 14-15 2016, Paris, France Photonics Event June 1-2 2016, Veldhoven, Netherlands MipTec Sept 19-22 2016, Basel, Switzerland Optatec June 7-9 Juni 2016,Frankfurt, Germany ESREF Sept 19-22 2016, Halle (Saale), Germany SGIA Sept 14-16 2016, Las Vegas, NV Fotonica 2016 June 6-8 2016, Roma, Italy 14th Congress ESTP Sept 20-23 2016, Barcelona, Spain CAP Sept 25-28 2016, Las Vegas, NV 3D Print Hub June 7-9 2016,Milan, Italy 28th Congress of the ESP Sept 25-29 2016, Cologne, Germany SPIE Optics & Photonics Aug 28-Sept 1 2016, San Diego, CA September 2016 50 News 2016 Vol. 1 Hamamatsu Photonics K.K. Sales Offices Japan: HAMAMATSU PHOTONICS K.K. 325-6, Sunayama-cho, Naka-ku Hamamatsu City, Shizuoka Pref. 430-8587, Japan Telephone: (81)53 452 2141, Fax: (81)53 456 7889 China: HAMAMATSU PHOTONICS (CHINA) Co., Ltd 1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China Telephone: (86)10 6586 6006, Fax: (86)10 6586 2866 E-mail: [email protected] USA: HAMAMATSU CORPORATION Main Office: 360 Foothill Road Bridgewater, NJ 08807, U.S.A. Telephone: (1)908 231 0960, Fax: (1)908 231 1218 E-mail: [email protected] California Office: 2875 Moorpark Avenue San Jose, CA 95128, U.S.A. Telephone: (1)408 261 2022, Fax: (1)408 261 2522 E-mail: [email protected] United Kingdom, South Africa: HAMAMATSU PHOTONICS UK LIMITED Main Office: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire, AL7 1BW, United Kingdom Telephone: (44)1707 294888, Fax: (44)1707 325777 E-mail: [email protected] South Africa Office: PO Box 1112 Buccleuch 2066 Johannesburg, South Africa Telephone/Fax: (27)11 8025505 France, Belgium, Switzerland, Spain, Portugal: HAMAMATSU PHOTONICS FRANCE S.A.R.L. Main Office: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] Swiss Office: Dornacherplatz 7 4500 Solothurn, Switzerland Telephone: (41)32 625 60 60, Fax: (41)32 625 60 61 E-mail: [email protected] Belgian Office: Axisparc Technology, 7, Rue Andre Dumont B-1435 Mont-Saint-Guibert, Belgium Telephone: (32)10 45 63 34, Fax: (32)10 45 63 67 E-mail: [email protected] Spanish Office: C. 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Boboli Str., Poland Telephone: (48)22 646 0016, Fax: (48)22 646 0018 E-mail: [email protected] North Europe and CIS: HAMAMATSU PHOTONICS NORDEN AB Main Office: Torshamnsgatan 35 SE-16440 Kista, Sweden Telephone: (46)8 509 031 00, Fax: (46)8 509 031 01 E-mail: [email protected] Russian Office: 11, Chistoprudny Boulevard, Building 1, RU-101000, Moscow, Russia Telephone: (7)495 258 85 18, Fax: (7)495 258 85 19 E-mail: [email protected] Italy: HAMAMATSU PHOTONICS ITALIA S.R.L. Main Office: Strada della Moia, 1 int. 6 20020 Arese, (Milano), Italy Telephone: (39)02 93581733, Fax: (39)02 93581741 E-mail: [email protected] Rome Office: Viale Cesare Pavese, 435, 00144 Roma, Italy Telephone: (39)06 50513454, Fax: (39)06 50513460 E-mail: [email protected] Impressum Hamamatsu Photonics News Publisher and copyright: HAMAMATSU PHOTONICS K.K. 325-6, Sunayama-cho, Naka-ku Hamamatsu City Shizuoka Pref. 430-8587, Japan Telephone: (81)53 452 2141 Fax: (81)53 456 7889 http://www.hamamatsu.com [email protected] Editor and responsible for content: Hiroaki Fukuoka Graphics and realisation: SINNIQ Technologiewerbung Ltd. www.sinniq.com Publishing frequency: Bi-annual, Date of this issue March 2016 Printing: Mühlbauer Druck GmbH Copyright: Reproduction in part or whole only allowed with our written permission. All rights reserved. Information in this catalogue is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2016 Hamamatsu Photonics K.K. News 2016 Vol. 1 51 e: n lso onli a w o n ws – atsu Ne -news.com m a m a H tsu amama www.h www.hamamatsu.com