PRELIMINARY DATASHEET LOW POWER, DUAL SIM CARD HYBRID SWITCH Description Features The IDTHS421V16 is a bi-directional, low power, Quad single-pole, double-throw (SPDT) hybrid switch targeted at dual SIM card multiplexing. It is optimized for switching the WLAN-SIM data and control signals and dedicates one channel as a supply-source switch. • • • • IDTHS421V16 Low On Capacitance for data path: 10 pF typical Low On Resistance for data path: 10Ω typical Low On Resistance for supply path: 0.4Ω typical Low power consumption: 1 µA maximum – 15 µA maximum ICCT over expanded voltage range (VIN = 1.8 V, VCC = 4.3 V) This device is compatible with the requirements of SIM cards and features a low on capacitance (CON) of 10 pF to ensure high-speed data transfer. The VSIM switch path has a low RON characteristic to insure minimal voltage drop in the dual SIM card supply paths. • Wide -3dB bandwidth: >160 MHz • Available in 16-pin QFN package – RoHS compliant • 8 kV ESD rating, >16kV power/ground ESD rating The IDTHS421P16 contains special circuitry that minimizes current consumption when the control voltage applied to the SEL pin is lower than the supply voltage (VCC). This feature is especially valuable in ultra-portable applications, such as cell phones; allowing direct interface with the general purpose I/Os of the baseband processor. Other applications include switching and connector sharing in portable cell phones, PDAs, digital cameras, printers, and notebook computers. Applications • Cell phones, PDAs, Digital cameras, and Notebooks • LCD monitors, TV, and Set-top boxes Analog Symbol 1VSIM VSIM 2VSIM 1RST RST 2RST 1CLK CLK 2CLK 1DAT DAT 2DAT Sel IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH 1 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH 1VSIM DAT 1 Sel Function Logic LOW 1DAT=DAT, 1RST=RST, 1CLK=CLK, 1VSIM=VSIM Logic HIGH 2DAT=DAT, 2RST=RST, 2CLK=CLK, 2VSIM=VSIM 2DAT Sel 2RST NC 1CLK CLK 2CLK GND 4 1RST RST Truth Table 1DAT VCC VSIM 2VSIM Pin Assignment (16-pin QFN) 16-pin QFN Pin Descriptions Pin Name Pin Description nDAT, nRST, nCLK Multiplexed data source inputs. nVSIM Multiplexed SIM supply inputs. VSIM, DAT, RST, CLK Sel Common SIM ports. Switch select. IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH 2 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH Absolute Maximum Ratings Stresses above the ratings listed below can cause permanent damage to the IDTHS421P16. These ratings, which are standard values for IDT commercially rated parts, are stress ratings only. Functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods can affect product reliability. Electrical parameters are guaranteed only over the recommended operating temperature range. Symbol Min. Max. Units Supply Voltage -0.5 +5.5 V VCNTRL DC Input Voltage, Sel (note 1) -0.5 VCC V VSW DC Switch I/O Voltage (note 1) -0.5 VCC+0.3 V IIK DC Input Diode Current -50 ISIM DC Output Current, VSIM 350 mA IOUT DC Output Current, DAT, CLK, RST 35 mA TSTG Storage Temperature +150 °C VCC ESD Parameter -65 Human Body Model, JEDEC: JESD22-A114 mA All pins 8 I/O to GND 8 Charged Device Model, JEDEC: JESD22-C101 kV 2 Note 1 : The input and output negative ratings may be exceeded if the input and output diode current ratings are observed. Recommended Operation Conditions Symbol VCC VCNTRL Parameter Supply Voltage Control Input Voltage, Sel (note 2) Min. Max. Units 2.7 4.3 V 0 VCC V -0.5 VCC V VSW Switch I/O Voltage ISIM DC Output Current, VSIM 150 mA IOUT DC Output Current, DAT, CLK, RST 25 mA +85 °C TA Operating Temperature -40 Note 2 : The control pin must be held HIGH or LOW; it must not float. Thermal Characteristics Parameter Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH Symbol Conditions Min. Typ. Max. Units θ JA Still air 69.4 ° C/W θ JA 1 m/s air flow 60.7 ° C/W θ JA 2.5 m/s air flow 54.4 ° C/W 9.7 ° C/W θ JC 3 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH DC Electrical Characteristics Unless stated otherwise, VCC = 3.3 V @ 25°C Parameter Symbol Clamp Diode Voltage VIK Input Voltage High VIH Input Voltage Low VIL Control Input Leakage IIN Conditions IIN = 18 mA VCC (V) TA = -40°C to +85°C Min. Typ. 2.7 Max. Units -1.2 2.7 to 3.6 1.3 4.3 1.7 V V 2.7 to 3.6 0.5 4.3 0.7 V VSW = 0 to VCC 4.3 -1 1 µA nRST, nDAT, nCLK, nVSIM = 0.3 V or 3.6 V (Fig. 2) 4.3 -60 60 nA OFF State Leakage Inc(OFF), Ino(OFF) Data Path Switch On Resistance (note 3) ROND VSW = 0, 2.3 V, ION = -20 mA (Fig. 1) 2.7 6.0 10.0 Ω VSIM Switch On Resistance (note 3) RONV VSW = 0, 2.3 V, ION = -100 mA (Fig. 1) 2.7 0.4 0.6 Ω 0.65 Ω Data Path Delta On Resistance (note 4) ROND VSW = 0V, ION = -20 mA 2.7 Quiescent Supply Current ICC VCNTRL = 0 or VCC, IOUT = 0 4.3 1.0 Increase in ICC Current per Control Voltage and VCC ICCT VCNTRL = 2.6 V, VCC = 4.3 V 4.3 10.0 VCNTRL = 1.8 V, VCC = 4.3 V 4.3 15.0 µA µA Notes: 3. Measured by the voltage drop between nDAT, nRST, nCLK and relative common port pins at the indicated current through the switch. On resistance is determined by the lower of the voltage on the relative ports. 4. Guaranteed by characterization. IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH 4 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH AC Electrical Characteristics Unless stated otherwise, VCC = 3.3 V @ 25°C TA = -40°C to +85°C Parameter Symbol Conditions VCC (V) Turn-on Time Sel to Output (DAT, CLK, RST) tOND RL = 50Ω, CL = 35 pF, VSW = 1.5 V (Fig. 3, Fig. 4) 2.7 to 3.6 60 ns Turn-off Time Sel to Output (DAT, CLK, RST) tOFFD RL = 50Ω, CL = 35 pF, VSW = 1.5 V (Fig. 3, Fig. 4) 2.7 to 3.6 40 ns Turn-on Time Sel to Output (VSIM) tONV RL = 50Ω, CL = 35 pF, VSW = 1.5 V (Fig. 3, Fig. 4) 2.7 to 3.6 50 ns Turn-off Time Sel to Output (VSIM) tOFFV RL = 50Ω, CL = 35 pF, VSW = 1.5 V (Fig. 3, Fig. 4) 2.7 to 3.6 40 ns Propagation Delay (DAT, CLK, RST) tPD RL = 50Ω, CL = 35 pF, (Fig. 3, Fig. 5), Note 5 Min. 3.3 Typ. Max. Units 0.25 ns Break-Before-Make (VSIM) tBBMV RL = 50Ω, CL = 35 pF, VSW1 = VSW2 = 1.5 V (Fig. 7), Note 5 2.7 to 3.6 3 12 ns Break-Before-Make (DAT, CLK, RST) tBBMD RL = 50Ω, CL = 35 pF, VSW1 = VSW2 = 1.5 V (Fig. 7), Note 5 2.7 to 3.6 3 18 ns RGEN = 0Ω, CL = 50 pF, VGEN = 0V 2.7 to 3.6 10 pC Charge Injection (DAT, CLK, RST) Q Off Isolation (DAT, CLK, RST) OIRR RL = 50Ω, f = 10 MHz (Fig. 9) 2.7 to 3.6 -80 dB Non-Adjacent Channel Crosstalk (DAT, CLK, RST) Xtalk RL = 50Ω, f = 10 MHz (Fig. 10) 2.7 to 3.6 -80 dB -3 dB Bandwidth (DAT, CLK, RST) BW RL = 50Ω, CL = 5 pF (Fig. 8) 2.7 to 3.6 >160 MHz Note: 5. Guaranteed by characterization. Capacitance Parameter Control Pin Input Capacitance Symbol CIN Conditions VCC = 0V TA = -40°C to +85°C Min. Typ. Max. 1.5 RST, CLK, DAT On Capacitance COND VCC = 3.3 V, f = 1 MHz (Fig. 12) 10 12 VSIM On Capacitance CONV VCC = 3.3 V, f = 1 MHz (Fig. 12) 130 150 RST, CLK, DAT Off Capacitance COFFD VCC = 3.3 V(Fig. 11) 3 VSIM Off Capacitance COFFV VCC = 3.3 V(Fig. 11) 40 IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH Units 5 pF IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH Test Diagrams tRISE = 2.5 ns VON nVSIM, nRST, nCLK, or nDAT VCC VOUT, RST, CLK, or DAT VSW ION GND VOH VSEL = 0 or VCC 90% 10% 90% Output - VOUT RON = VON / ION VOL Figure 1: On Resistance tOFF tON Figure 4: Turn-On/Turn-Off Waveforms InA(OFF) NC VCC /2 VCC /2 10% GND 90% 90% Input - VSEL tFALL = 2.5 ns A VSW tRISE = 2.5 ns tFALL = 2.5 ns GND VCC VSEL = 0 or VCC Input - VSW Figure 2: Off Leakage GND 10% 90% 90% VCC /2 VCC /2 10% VOH nVSIM, nRST, nCLK, or nDAT VSIM, RST, CLK, or DAT Output - VOUT VSW CL 50% 50% VOL RL VOUT tpLH tpHL GND Sel Figure 5: Propagation Delay GND RL and CL are functions of the application environment (see tables for specific values). CL includes test fixture and stray capacitance. Figure 3: AC Test Circuit Load IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH 6 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH nVSIM, nRST, nCLK, or nDAT HYBRID SWITCH VSIM, RST, CLK, or DAT Network Analyzer RS VSW CL VIN RL VOUT GND VSEL Sel GND VOUT GND RT GND GND VCC Off Logic Input On VS GND RS and RT are functions of the application environment (see tables for specific values). Off 0V Figure 8: Bandwidth VOUT VOUT Network Analyzer Q= RS VOUT x CL Figure 6: Charge Injection VIN RT VSEL GND nVSIM, nRST, nCLK, or nDAT VSIM, RST, CLK, or DAT CL VSW2 VOUT GND RT GND VSW1 GND VS GND RS and RT are functions of the application environment (see tables for specific values). RL VOUT GND Off isolation = 20 Log (VOUT / VIN) GND GND Figure 9: Channel Off Isolation Sel tRISE = 2.5 ns VCC Input - VSel 10% Network Analyzer NC 90% RS VIN VCC /2 0V VOUT 0.9 x VOUT VS GND VSEL RT 0.9 x VOUT GND GND tBBM RL and CL are functions of the application environment (see tables for specific values). CL includes test fixture and stray capacitance. GND RS and RT are functions of the application environment (see tables for specific values). Figure 7: Break-Before-Make Interval Timing RT VOUT GND Crosstalk = 20 Log (VOUT / VIN) Figure 10: Non-Adjacent Channel-to-channel Crosstalk IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH 7 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH nVSIM, nRST, nCLK, or nDAT Capacitance Meter VSEL = 0 or VCC f = 1 MHz nVSIM, nRST, nCLK, or nDAT Figure 11: Channel Off Capacitance VSIM, RST, CLK, or DAT Capacitance Meter f = 1 MHz VSEL = 0 or VCC nVSIM, nRST, nCLK, or nDAT Figure 12: Channel On Capacitance IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH 8 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH Marking Diagram (QFN) TBD Notes: 1. “Z” is the device step (1 to 2 characters). 2. YYWW is the last two digits of the year and week that the part was assembled. 3. “$” is the assembly mark code. 4. “G” after the two-letter package code designates RoHS compliant package. 5. “I” at the end of part number indicates industrial temperature range. 6. Bottom marking: country of origin if not USA. IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH 9 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH Package Outline and Package Dimensions (16-pin 3x3mm QFN) Package dimensions are kept current with JEDEC Publication No. 95 Seating Plane A1 Index Area N 1 2 (Ref) ND & NE Even (ND-1)x e (Ref) L A3 e N 1 (Typ) If ND & NE 2 are Even 2 Sawn Singulation E E2 E2 Top View A D 0.08 C Symbol A A1 A3 b e N ND NE D x E BASIC D2 E2 L Min (NE-1)x e (Ref) 2 (Ref) ND & NE Odd C b e Thermal Base D2 2 D2 Millimeters Max 0.80 1.00 0 0.05 0.25 Reference 0.18 0.30 0.50 BASIC 16 4 4 3.00 x 3.00 1.55 1.80 1.55 1.80 0.30 0.50 Ordering Information Part / Order Number Marking Shipping Packaging Package Temperature IDTHS421V16NLGI TBD Tubes 16-pin QFN -40 to +85° C Tape and Reel 16-pin QFN -40 to +85° C IDTHS421V16NLGI8 Parts that are ordered with a “G” after the two-letter package code are the Pb-Free configuration and are RoHS compliant. While the information presented herein has been checked for both accuracy and reliability, Integrated Device Technology (IDT) assumes no responsibility for either its use or for the infringement of any patents or other rights of third parties, which would result from its use. No other circuits, patents, or licenses are implied. This product is intended for use in normal commercial applications. Any other applications such as those requiring extended temperature range, high reliability, or other extraordinary environmental requirements are not recommended without additional processing by IDT. IDT reserves the right to change any circuitry or specifications without notice. IDT does not authorize or warrant any IDT product for use in life support devices or critical medical instruments. IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH 10 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH Revision History Rev. Originator Date Description of Change A JS 01/15/08 Preliminary datasheet. Initial release. B JS 02/12/08 Change the part number to IDTHS421V16. IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH 11 IDTHS421V16 REV B 012908 IDTHS421V16 LOW POWER, DUAL SIM CARD HYBRID SWITCH HYBRID SWITCH Innovate with IDT and accelerate your future networks. Contact: www.IDT.com For Sales For Tech Support 800-345-7015 408-284-8200 Fax: 408-284-2775 www.idt.com/go/clockhelp Corporate Headquarters Integrated Device Technology, Inc. www.idt.com © 2006 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice. IDT and the IDT logo are trademarks of Integrated Device Technology, Inc. Accelerated Thinking is a service mark of Integrated Device Technology, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners. Printed in USA