VS-104MT..KPbF Series www.vishay.com Vishay Semiconductors Three Phase AC Switch (Power Modules), 100 A FEATURES • Package fully compatible with the industry standard INT-A-PAK power modules series • High thermal conductivity package, electrically insulated case • Outstanding number of power encapsulated components • Excellent power volume ratio • 4000 VRMS isolating voltage • UL E78996 approved MT-K • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IO 100 A DESCRIPTION VRRM 800 V to 1600 V Package MT-K Circuit Three phase AC switch A range of extremely compact, encapsulated three phase AC switches offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications as control motor starter. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IO TC IFSM I2t VALUES 104MT..K UNITS 100 A 80 °C 50 Hz 1130 60 Hz 1180 50 Hz 6380 60 Hz 5830 I2t A A2s 63 800 A2s V VRRM Range 800 to 1600 TStg Range -40 to +125 TJ Range -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 80 800 900 800 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 VS-104MT..K IRRM/IDRM, MAXIMUM AT TJ = 125 °C mA 40 (1) Note (1) For single AC switch Revision: 20-Nov-15 Document Number: 94351 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-104MT..KPbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum IRMS output current at case temperature IO TEST CONDITIONS For all conduction angle t = 10 ms Maximum peak, one-cycle forward, non-repetitive on state surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied VALUES 104MT..K UNITS 100 A 80 °C 1130 1180 950 Initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied A 1000 6380 5830 4510 A2s 4120 63 800 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 0.99 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ maximum 1.15 A2s V Low level value on-state slope resistance rt1 16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 3.90 High level value on-state slope resistance rt2 (I > x IT(AV)), TJ maximum 3.48 VTM Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction 1.53 V dI/dt TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs Maximum on-state voltage drop Maximum non-repetitive rate of rise of turned on current Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, grate open circuit 200 Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 m mA BLOCKING PARAMETER RMS isolation voltage Maximum critical rate of rise of off-state voltage SYMBOL VINS dV/dt (1) 104MT.K UNITS TJ = 25 °C all terminal shorted f = 50 Hz, t = 1 s TEST CONDITIONS 4000 V TJ = TJ maximum, linear to 0.67 VDRM, gate open circuit 500 V/μs 104MT.K UNITS Note (1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 104MT160KBS90 TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger SYMBOL TEST CONDITIONS PGM 10 PG(AV) 2.5 IGM TJ = TJ maximum VGT TJ = 40 °C 4.0 TJ = 25 °C 2.5 TJ = 125 °C IGT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger IGD A 10 TJ = -40 °C Maximum required DC gate current to trigger 2.5 - VGT W Anode supply = 6 V, resistive load 1.7 270 TJ = 25 °C 150 TJ = 125 °C 80 TJ = TJ maximum, rated VDRM applied V mA 0.25 V 6 mA Revision: 20-Nov-15 Document Number: 94351 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-104MT..KPbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heat sink RthCS to heat sink Mounting torque ± 100 % 104MT.K UNITS -40 to +125 °C DC operation per single AC switch 0.34 DC operation per junction 0.69 180 °C sine conduction angle per single AC switch 0.36 180 °C sine conduction angle per junction 0.72 Per module Mounting surface smooth, flat and greased 0.03 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. to terminal Approximate weight K/W 4 to 6 Nm 3 to 4 225 g R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES 104MT.K RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082 K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Instantaneous On-State Current (A) Maximum Allowable Case Temperature (°C) 130 104MT..K Series Device fully turned-on 120 110 100 90 Per single AC switch IRMS ~ 80 70 For all conduction angles 60 0 20 40 60 80 100 120 1000 100 TJ = 25 °C TJ = 125 °C 10 104MT..K Series Per junction 1 0 1 2 3 4 5 RMS Output Current (A) Instantaneous On-State Voltage (V) Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics Revision: 20-Nov-15 Document Number: 94351 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-104MT..KPbF Series www.vishay.com Vishay Semiconductors 500 Maximum Total Power Loss (W) (Per Total Module) 50 0 0.3 250 K/W R 100 W 300 -Δ Conduction angle 150 K/ W K/ 200 15 03 0. Ø Ø 250 0. 350 = 300 400 SA 350 450 R th 400 180° 120° 90° 60° 30° W K/ 104MT..K Series TJ = 125 °C Device fully turned-on 450 05 0. Maximum Total Power Loss (W) (Per Total Module) 500 0.5 200 100 K/W 0.7 K /W 1.0 K /W 50 1.5 K/W 150 0 0 20 40 60 80 100 0 120 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) RMS Output Current (A) Fig. 3 - Total Power Loss Characteristics 1100 900 800 700 600 500 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 1100 Peak Half Sine Wave On-State Current (A) 1000 Peak Half Sine Wave On-State Current (A) 1200 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 104MT..K Series Per junction 1000 900 800 700 600 500 400 104MT..K Series Per junction 400 1 10 0.01 100 0.1 1 Number of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 10 ZthJC - Transient Thermal Impedance (°C/W) Steady state value RthJC = 1.05 K/W 1 RthJC = 0.77 K/W RthJC = 0.69 K/W (DC operation) 104MT..K Series 0.1 0.01 Per junction 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC Characteristics Revision: 20-Nov-15 Document Number: 94351 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-104MT..KPbF Series www.vishay.com Vishay Semiconductors 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω tr = 0.5 µs, tp ≥ 6 µs b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω tr = 1 µs, tp ≥ 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) TJ = 25 °C 1 TJ = -40 °C (b) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (4) (3) (1) (2) VGD IGD 0.1 0.001 Frequency limited by PG(AV) 104MT..K Series 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 7 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 10 4 MT 160 1 2 3 4 5 K PbF 6 1 - Vishay Semiconductors product 2 - Current rating code: 10 = 100 A (average) 3 - AC switch 4 5 - Essential part number Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - PbF = lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION A B C 1 3 5 2 4 6 D E F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95004 Revision: 20-Nov-15 Document Number: 94351 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTK (with and without optional barrier) DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 8.5 ± 0.5 (0.34 ± 0.02) 30 ± 0.5 (1.17 ± 0.02) 24 ± 0.5 (0.94 ± 0.02) 38 ± 0.5 (1.5 ± 0.02) 25.5 ± 0.5 (1.004 ± 0.02) 28 ± 1 (1.11 ± 0.04) Screws M5 x 0.8 length 10 35 ± 0.3 (1.38 ± 0.01) 75 ± 0.5 (2.95 ± 0.02) A 2 3 4 B C 5 6 7 8 Ø 6.5 ± 0.2 (Ø 0.26 ± 0.01) 14 ± 0.3 (0.55 ± 0.01) 1 D 18 ± 0.3 (0.71 ± 0.01) 5 ± 0.3 (0.2 ± 0.01) F E 46 ± 0.3 (1.81 ± 0.01) 80 ± 0.3 (3.15 ± 0.01) 94 ± 0.3 (3.7 ± 0.01) Document Number: 95004 Revision: 27-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Outline Dimensions MTK (with and without optional barrier) Vishay Semiconductors DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 24 ± 0.5 (0.94 ± 0.02) 8.5 ± 0.5 (0.34 ± 0.02) 30 ± 0.5 (1.17 ± 0.02) 25.5 ± 0.5 (1.004 ± 0.02) 28 ± 1 (1.11 ± 0.04) Screws M5 x 0.8 length 10 35 ± 0.3 (1.38 ± 0.01) 75 ± 0.5 (2.95 ± 0.02) A 2 3 4 B C 5 6 7 8 Ø 6.5 ± 0.2 (Ø 0.26 ± 0.01) 14 ± 0.3 (0.55 ± 0.01) 1 D 18 ± 0.3 (0.71 ± 0.01) 5 ± 0.3 (0.2 ± 0.01) F E 46 ± 0.3 (1.81 ± 0.01) 80 ± 0.3 (3.15 ± 0.01) 94 ± 0.3 (3.7 ± 0.01) www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 95004 Revision: 27-Aug-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000