VS-104MT..KPbF Series Datasheet

VS-104MT..KPbF Series
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Vishay Semiconductors
Three Phase AC Switch (Power Modules), 100 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Outstanding number of power encapsulated components
• Excellent power volume ratio
• 4000 VRMS isolating voltage
• UL E78996 approved
MT-K
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IO
100 A
DESCRIPTION
VRRM
800 V to 1600 V
Package
MT-K
Circuit
Three phase AC switch
A range of extremely compact, encapsulated three phase
AC switches offering efficient and reliable operation. They
are intended for use in general purpose and heavy duty
applications as control motor starter.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IO
TC
IFSM
I2t
VALUES
104MT..K
UNITS
100
A
80
°C
50 Hz
1130
60 Hz
1180
50 Hz
6380
60 Hz
5830
I2t
A
A2s
63 800
A2s
V
VRRM
Range
800 to 1600
TStg
Range
-40 to +125
TJ
Range
-40 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
80
800
900
800
100
1000
1100
1000
120
1200
1300
1200
140
1400
1500
1400
160
1600
1700
1600
VS-104MT..K
IRRM/IDRM,
MAXIMUM
AT TJ = 125 °C
mA
40 (1)
Note
(1) For single AC switch
Revision: 20-Nov-15
Document Number: 94351
1
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VS-104MT..KPbF Series
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum IRMS output current at case temperature
IO
TEST CONDITIONS
For all conduction angle
t = 10 ms
Maximum peak, one-cycle forward, non-repetitive
on state surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
No voltage 
reapplied
100 % VRRM
reapplied
No voltage 
reapplied
VALUES
104MT..K
UNITS
100
A
80
°C
1130
1180
950
Initial 
TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
A
1000
6380
5830
4510
A2s
4120
63 800
Low level value of threshold voltage
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum
0.99
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ maximum
1.15
A2s
V
Low level value on-state slope resistance
rt1
16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum
3.90
High level value on-state slope resistance
rt2
(I >  x IT(AV)), TJ maximum
3.48
VTM
Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction
1.53
V
dI/dt
TJ = 25 °C, from 0.67 VDRM, ITM =  x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
A/μs
Maximum on-state voltage drop
Maximum non-repetitive rate of rise of turned on
current
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V, resistive load, grate
open circuit
200
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
m
mA
BLOCKING
PARAMETER
RMS isolation voltage
Maximum critical rate of rise of off-state voltage
SYMBOL
VINS
dV/dt (1)
104MT.K
UNITS
TJ = 25 °C all terminal shorted
f = 50 Hz, t = 1 s
TEST CONDITIONS
4000
V
TJ = TJ maximum, linear to 0.67 VDRM, 
gate open circuit
500
V/μs
104MT.K
UNITS
Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 104MT160KBS90
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate voltage to trigger
SYMBOL
TEST CONDITIONS
PGM
10
PG(AV)
2.5
IGM
TJ = TJ maximum
VGT
TJ = 40 °C
4.0
TJ = 25 °C
2.5
TJ = 125 °C
IGT
Maximum gate voltage that will not trigger
VGD
Maximum gate current that will not trigger
IGD
A
10
TJ = -40 °C
Maximum required DC gate current to trigger
2.5
- VGT
W
Anode supply = 6 V, resistive load
1.7
270
TJ = 25 °C
150
TJ = 125 °C
80
TJ = TJ maximum, rated VDRM applied
V
mA
0.25
V
6
mA
Revision: 20-Nov-15
Document Number: 94351
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-104MT..KPbF Series
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Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
and storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
case to heat sink
RthCS
to heat sink
Mounting
torque ± 100 %
104MT.K
UNITS
-40 to +125
°C
DC operation per single AC switch
0.34
DC operation per junction
0.69
180 °C sine conduction angle per single AC switch
0.36
180 °C sine conduction angle per junction
0.72
Per module
Mounting surface smooth, flat and greased
0.03
A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow for
the spread of the compound. Lubricated threads.
to terminal
Approximate weight
K/W
4 to 6
Nm
3 to 4
225
g
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
104MT.K
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.027
0.033
0.042
0.057
0.081
0.023
0.037
0.046
0.059
0.082
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Instantaneous On-State Current (A)
Maximum Allowable Case
Temperature (°C)
130
104MT..K Series
Device fully turned-on
120
110
100
90
Per single AC switch
IRMS
~
80
70
For all conduction angles
60
0
20
40
60
80
100
120
1000
100
TJ = 25 °C
TJ = 125 °C
10
104MT..K Series
Per junction
1
0
1
2
3
4
5
RMS Output Current (A)
Instantaneous On-State Voltage (V)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Forward Voltage Drop Characteristics
Revision: 20-Nov-15
Document Number: 94351
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-104MT..KPbF Series
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Vishay Semiconductors
500
Maximum Total Power Loss (W)
(Per Total Module)
50
0
0.3
250
K/W
R
100
W
300
-Δ
Conduction angle
150
K/
W
K/
200
15
03
0.
Ø
Ø
250
0.
350
=
300
400
SA
350
450
R th
400
180°
120°
90°
60°
30°
W
K/
104MT..K Series
TJ = 125 °C
Device fully
turned-on
450
05
0.
Maximum Total Power Loss (W)
(Per Total Module)
500
0.5
200
100
K/W
0.7 K
/W
1.0 K
/W
50
1.5 K/W
150
0
0
20
40
60
80
100
0
120
25
50
75
100
125
Maximum Allowable Ambient
Temperature (°C)
RMS Output Current (A)
Fig. 3 - Total Power Loss Characteristics
1100
900
800
700
600
500
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
1100
Peak Half Sine Wave
On-State Current (A)
1000
Peak Half Sine Wave
On-State Current (A)
1200
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
104MT..K Series
Per junction
1000
900
800
700
600
500
400
104MT..K Series
Per junction
400
1
10
0.01
100
0.1
1
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
10
ZthJC - Transient Thermal
Impedance (°C/W)
Steady state value
RthJC = 1.05 K/W
1
RthJC = 0.77 K/W
RthJC = 0.69 K/W
(DC operation)
104MT..K Series
0.1
0.01
Per junction
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 6 - Thermal Impedance ZthJC Characteristics
Revision: 20-Nov-15
Document Number: 94351
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-104MT..KPbF Series
www.vishay.com
Vishay Semiconductors
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
tr = 0.5 µs, tp ≥ 6 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 µs, tp ≥ 6 µs
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(a)
TJ = 25 °C
1
TJ = -40 °C
(b)
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(4)
(3)
(1)
(2)
VGD
IGD
0.1
0.001
Frequency limited by PG(AV)
104MT..K Series
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 7 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
10
4
MT
160
1
2
3
4
5
K
PbF
6
1
-
Vishay Semiconductors product
2
-
Current rating code: 10 = 100 A (average)
3
-
AC switch
4
5
-
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
PbF = lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
A
B
C
1
3
5
2
4
6
D
E
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95004
Revision: 20-Nov-15
Document Number: 94351
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (type 110)
8.5 ± 0.5
(0.34 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
24 ± 0.5
(0.94 ± 0.02)
38 ± 0.5
(1.5 ± 0.02)
25.5 ± 0.5
(1.004 ± 0.02)
28 ± 1
(1.11 ± 0.04)
Screws M5 x 0.8 length 10
35 ± 0.3
(1.38 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
A
2
3
4
B
C
5
6
7
8
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
1
D
18 ± 0.3
(0.71 ± 0.01)
5 ± 0.3
(0.2 ± 0.01)
F
E
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
Document Number: 95004
Revision: 27-Aug-07
For technical questions, contact: [email protected]
www.vishay.com
1
Outline Dimensions
MTK (with and without optional barrier)
Vishay Semiconductors
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (type 110)
24 ± 0.5
(0.94 ± 0.02)
8.5 ± 0.5
(0.34 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
25.5 ± 0.5
(1.004 ± 0.02)
28 ± 1
(1.11 ± 0.04)
Screws M5 x 0.8 length 10
35 ± 0.3
(1.38 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
A
2
3
4
B
C
5
6
7
8
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
1
D
18 ± 0.3
(0.71 ± 0.01)
5 ± 0.3
(0.2 ± 0.01)
F
E
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
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Document Number: 95004
Revision: 27-Aug-07
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000