VS-T20HF220 www.vishay.com Vishay Semiconductors Power Rectifier Diodes (T-Modules), 2200 V, 20 A FEATURES • Electrically isolated base plate • 2200 VRRM • Industrial standard packaging • UL approved file E78996 • Simplified mechanical designs, rapid assembly • Large creepage distances • Designed and qualified for industrial level D-55 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY IF(AV) 20 A Type Modules - Diode, High Voltage VRRM 2200 V Package D-55 Circuit Single diodes These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built. Applications include power supplies, battery charges, welders, motor controls, and solar panel application. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) TC T20HF UNITS 20 A 85 °C 31 IF(RMS) IFSM I2t 50 Hz 450 60 Hz 470 50 Hz 1015 60 Hz 920 I2t VRRM TJ A A2s 10 125 A2s 2200 V - 40 to 150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = 150 °C mA T20HF220 22 2200 2250 18 Revision: 07-Jun-13 Document Number: 94709 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T20HF220 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop IF(AV) TEST CONDITIONS 180° conduction, half sine wave IF(RMS) IFSM I2t I2t t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied T20HF UNITS 20 85 31 450 470 380 400 1015 920 715 650 A °C A 10 125 A A2s A2s VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 0.77 VF(TO)2 (I > x IF(AV)), TJ maximum 0.89 rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 8.5 rf2 (I > x IF(AV)), TJ maximum 6.7 IFM = 60 A, TJ = 25 °C, tp = 400 μs square pulse Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.50 V T20HF UNITS 18 mA 3500 V VFM V m BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse leakage current IRRM TJ = 150 °C RMS isolation voltage VISOL 50 Hz, circuit to base, all terminals shorted TJ = 25 °C, t = 1 s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES T20HF UNITS Maximum junction operating - 40 to 150 °C TJ, TStg and storage temperature range Maximum thermal resistance, RthJC DC operation 2.53 junction to case per junction K/W Mounting surface smooth, flat Maximum thermal resistance, 0.2 RthCS and greased case to heatsink M3.5 mounting screws (1) to heatsink 1.3 ± 10 % Non-lubricated Mounting torque, Nm threads ± 10 % terminals M5 screw terminals 3 ± 10 % Approximate weight See dimensions - link at the end of datasheet 54 g Case style T-module (D-55) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound R CONDUCTION PER JUNCTION DEVICES T20HF... SINUSOIDAL CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 0.29 0.34 0.43 0.64 1.10 RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 0.20 0.35 0.47 0.67 1.11 UNITS K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 07-Jun-13 Document Number: 94709 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T20HF220 Vishay Semiconductors Maximum Forward Power Loss (W) 160 150 140 130 120 110 100 90 30° 80 60° 90° 120° 180° 70 60 50 0 10 20 100 80 DC 60 50 40 30 RMS limit 20 10 0 0 10 20 30 40 50 60 70 80 Anode Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics 150 140 90° 130 120 110 100 90 30° 80 60° 70 120° DC 180° 60 0 10 20 30 IF(AV) - Average Forward Current (A) Peak Half Sine Wave Forward Current (A) IF(AV) - Average Forward Current (A) 500 620 450 75 30° 60° 90° 180° 120° 50 RMS limit 25 0 10 20 30 40 50 60 Anode Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Revision: 07-Jun-13 at 60 Hz 0.0083 s at 50 Hz 0.0100 s 400 350 300 250 200 150 100 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 2 - Current Ratings Characteristics Maximum Forward Power Loss Characteristics 60° 120° 90° 180° 70 30 160 0 30° 90 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 520 No Voltage Reapplied Rated VRRM Reapplied 420 320 220 120 20 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94709 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T20HF220 Vishay Semiconductors 100 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 °C TJ = 25 °C 10 TJ = 150 °C 10 1 0.1 0.01 1 TJ = 25 °C 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 500 1000 1500 2000 2500 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Typical Values of Reverse Current vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- T 20 HF 220 1 2 3 4 5 1 - Vishay Semiconductors product 2 - Module type 3 - Current rating 4 - Circuit configuration (see Circuit Configuration table) 5 - Voltage code x 10 = VRRM CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION Single diode CIRCUIT CONFIGURATION CODE HF CIRCUIT DRAWING + - LINKS TO RELATED DOCUMENTS Dimensions Revision: 07-Jun-13 www.vishay.com/doc?95313 Document Number: 94709 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-55 T-Module Diode Standard and Fast Recovery DIMENSIONS in millimeters (inches) 25 ± 1 23.5 (0.93) 3 (0.12) 41 (1.61) MAX. 11 (0.43) 18 (0.71) + 27 (1.06) 15 (0.59) 3.9 (0.15) 8 (0.31) - M5 30 (1.18) Document Number: 95313 Revision: 01-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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