INTERSIL 5962F0721801V9A

ISL73096RH, ISL73127RH, ISL73128RH
The ISL73096RH, ISL73127RH and ISL73128RH are
radiation hardened bipolar transistor arrays. The
ISL73096RH consists of three NPN transistors and two
PNP transistors on a common substrate. The
ISL73127RH consists of five NPN transistors on a
common substrate. The ISL73128RH consists of five PNP
transistors on a common substrate. One of our bonded
wafer, dielectrically isolated fabrication processes
provides an immunity to Single Event Latch-up and the
capability of highly reliable performance in any radiation
environment.
The high gain-bandwidth product and low noise figure of
these transistors make them ideal for use in high
frequency amplifier and mixer applications. Monolithic
construction of the NPN and PNP transistors provides the
closest electrical and thermal matching possible. Access
is provided to each terminal of the transistors for
maximum application flexibility.
Specifications for Rad Hard QML devices are
controlled by the Defense Supply Center in
Columbus (DSCC). The SMD numbers listed here
must be used when ordering.
Detailed Electrical Specifications for these
devices are contained in SMD 5962-07218. A
“hot-link” is provided on our website for
downloading.
Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . 3 x 105RAD(Si)
- SEL Immune . . Bonded Wafer Dielectric Isolation
• NPN Gain Bandwidth Product (FT) . . . 8GHz (Typ)
• NPN Current Gain (hFE). . . . . . . . . . . . 130 (Typ)
• NPN Early Voltage (VA) . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (FT) . . . 5.5GHz (Typ)
• PNP Current Gain (hFE) . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (VA) . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)
• Complete Isolation Between Transistors
Applications
• High Frequency Amplifiers and Mixers
- Refer to Application Note AN1503
• High Frequency Converters
• Synchronous Detector
Ordering Information
ORDERING NUMBER
PART NUMBER
TEMP. RANGE
(°C)
PACKAGE
(Pb-free)
5962F0721801V9A
ISL73096RHVX
-55 to +125
DIE
5962F0721801VXC
ISL73096RHVF (Notes 1, 2)
-55 to +125
16 LD FLATPACK
5962F0721802V9A
ISL73127RHVX
-55 to +125
DIE
5962F0721802VXC
ISL73127RHVF (Notes 1, 2)
-55 to +125
16 LD FLATPACK
5962F0721803V9A
ISL73128RHVX
-55 to +125
DIE
5962F0721803VXC
ISL73128RHVF (Notes 1, 2)
-55 to +125
16 LD FLATPACK
ISL73096RHF/PROTO
ISL73096RHF/PROTO
-55 to +125
ISL73096RHX/SAMPLE
ISL73096RHX/SAMPLE
-55 to +125
ISL73127RHF/PROTO
ISL73127RHF/PROTO
-55 to +125
ISL73127RHX/SAMPLE
ISL73127RHX/SAMPLE
-55 to +125
November 12, 2009
FN6475.3
1
DIE
DIE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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ISL73096RH, ISL73127RH, ISL73128RH
Radiation Hardened Ultra High Frequency
NPN/PNP Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH
Ordering Information (Continued)
ORDERING NUMBER
TEMP. RANGE
(°C)
PART NUMBER
ISL73128RHF/PROTO
ISL73128RHF/PROTO
-55 to +125
ISL73128RHX/SAMPLE
ISL73128RHX/SAMPLE
-55 to +125
PACKAGE
(Pb-free)
DIE
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant
and compatible with both SnPb and Pb-free soldering operations.
2. For Moisture Sensitivity Level (MSL), please see device information page for ISL73096RH, ISL73127RH, ISL73128RH. For more
information on MSL please see techbrief TB363.
Pin Configurations
ISL73127RH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
ISL73096RH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
Q1B
1
16
NC
Q1C
1
16
Q1E
Q1E
2
15
Q5C
Q2C
2
15
Q1B
Q1C
3
14
Q5B
Q2E
3
14
Q5B
Q2E
4
13
Q5E
Q2B
4
13
Q5E
5
12
Q5C
Q2B
5
12
Q4C
NC
Q2C
6
11
Q4B
Q3C
6
11
Q4C
Q3E
7
10
Q4E
Q3E
7
10
Q4E
Q3B
8
9
Q3C
Q3B
8
9
Q4B
ISL73128RH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
2
Q1C
1
16
Q1E
Q2C
2
15
Q1B
Q2E
3
14
Q5B
Q2B
4
13
Q5E
NC
5
12
Q5C
Q3C
6
11
Q4C
Q3E
7
10
Q4E
Q3B
8
9
Q4B
FN6475.3
November 12, 2009
ISL73096RH, ISL73127RH, ISL73128RH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
52.8 mils x 52.0 mils x 14 mils ±1 mil
1340μm x 1320µm x 355.6µm ±25.4µm
INTERFACE MATERIALS:
Substrate Potential:
Floating
ADDITIONAL INFORMATION:
Glassivation:
Worst Case Current Density:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
3.04 x 105A/cm2
Transistor Count:
Top Metallization:
5
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8kÅ ±0.5kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Substrate:
UHF-1X Bonded Wafer, DI
Backside Finish:
Silicon
Metallization Mask Layout
(2) Q2C (1) Q1C(16) Q1E
(15) Q1B
(3) Q2E
(14) Q5
(4) Q2B
(13) Q5
(5) NC
(12) Q5
(6) Q3C
(11) Q4
(7) Q3E (8) Q3B (9) Q4B(10) Q4E
FIGURE 1. ISL73096RH, ISL73127RH
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Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications
at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by
Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any
infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of Intersil or its subsidiaries.
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3
FN6475.3
November 12, 2009
ISL73096RH, ISL73127RH, ISL73128RH
Metallization Mask Layout (Continued)
(15) Q1B
(2) Q2C (1) Q1C(16) Q1E
(3) Q2E
(14) Q5B
(4) Q2B
(13) Q5E
(5) NC
(12) Q5C
(6) Q3C
(11) Q4C
(7) Q3E (8) Q3B (9) Q4B(10) Q4E
FIGURE 2. ISL73128RH
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to
web to make sure you have the latest Rev.
DATE
REVISION
CHANGE
11/12/09
FN6475.3
Converted to new Intersil template. Changed App Note Reference from “AN9315” to “AN1503”
to reflect new app note for the radiation hardened product. Updated ordering information with
package column, notes to match lead finish and MSL note.
03/23/09
FN6475.2
Under Pinouts, changed DIP symbols to flatpack symbols. Changed (16 LD SBDIP) CDIP2-T16
to (16 LD Flatpack) CDFP4-F16.
Under Ordering Information, added the following flatpack device types:
5962F0721801VXC (ISL73096RHVF), 5962F0721802VXC (ISL73127RHVF) and
5962F0721803VXC (ISL73128RHVF).
12/2007
FN6475.1
Added ISL73127RH & ISL73128RH device types.
03/29/07
FN6475.0
Initial Release.
Products
Intersil Corporation is a leader in the design and manufacture of high-performance analog semiconductors. The
Company's products address some of the industry's fastest growing markets, such as, flat panel displays, cell phones,
handheld products, and notebooks. Intersil's product families address power management and analog signal
processing functions. Go to www.intersil.com/products for a complete list of Intersil product families.
*For a complete listing of Applications, Related Documentation and Related Parts, please see the respective device
information page on intersil.com: ISL73096, ISL73127RH, ISL73128RH
To report errors or suggestions for this datasheet, please go to www.intersil.com/askourstaff
FITs are available from our website at http://rel.intersil.com/reports/search.php
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FN6475.3
November 12, 2009