INTERSIL 5962F0721801V9A

ISL73096RH
®
Data Sheet
March 29, 2007
Radiation Hardened Ultra High Frequency
NPN-PNP Transistor Array
The ISL73096RH is a radiation hardened transistor array
consisting of three NPN transistors and two PNP transistors
on a common substrate. One of our bonded wafer,
dielectrically isolated fabrication processes provides an
immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
The high gain-bandwidth product and low noise figure of
these transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-07218. A “hot-link” is provided
on our website for downloading.
Pinout
ISL73096RH
(16 LD SBDIP) CDIP2-T16
TOP VIEW
FN6475.0
Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105RAD(Si)
- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation
• NPN Gain Bandwidth Product (FT) . . . . . . . . .8GHz (Typ)
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . 130 (Typ)
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (FT). . . . . . . . 5.5GHz (Typ)
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)
Applications
• High Frequency Amplifiers and Mixers
- Refer to Application Note AN9315
• High Frequency Converters
• Synchronous Detectors
Ordering Information
Q1B
1
Q1E
2
Q1C
3
Q2E
4
Q2B
5
Q2C
6
Q3E
7
Q3B
8
16 NC
Q1
15 Q5C
Q5
14 Q5B
13 Q5E
Q2
ORDERING NUMBER
5962F0721801V9A
INTERNAL
MKT. NUMBER
ISL73096RHVX
TEMP. RANGE
(°C)
-55 to +125
12 Q4C
Q4
11 Q4B
10 Q4E
Q3
9 Q3C
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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ISL73096RH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
52.8 mils x 52.0 mils x 14 mils ±1 mil
1340μm x 1320μm x 355.6μm ±25.4μm
INTERFACE MATERIALS:
Substrate Potential:
Floating
ADDITIONAL INFORMATION:
Glassivation:
Worst Case Current Density:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
3.04 x 105A/cm2
Transistor Count:
Top Metallization:
5
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8kÅ ±0.5kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Substrate:
UHF-1X Bonded Wafer, DI
Backside Finish:
Silicon
Metallization Mask Layout
ISL73096RH.
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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2
FN6475.0
March 29, 2007