SMCJ SERIES Taiwan Semiconductor CREAT BY ART 1500W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Excellent clamping capability - Fast response time: Typically less than 1.0ps - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 DO-214AB (SMC) MECHANICAL DATA Case: DO-214AB (SMC) Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.21 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation at TA=25°C, tp=1ms (Note 1) PPK 1500 W Steady state power dissipation PD 5 W Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A VF 3.5 / 5.0 V RθJC RθJA 10 55 °C/W TJ - 55 to +150 °C TSTG - 55 to +150 °C Maximum instantaneous forward voltage at 100 A for Unidirectional only (Note 2) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Non-repetitive current pulse per fig. 3 and derated above TA=25°C per fig. 2 Note 2: VF=3.5V on SMCJ5.0 - SMCJ90 and VF=5.0V on SMCJ100 - SMCJ170 Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMCJ5.0 - types SMCJ170 2. Electrical characteristics apply in both directions Version: O1602 SMCJ SERIES Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION PART NO. SMCJxxxx (Note 1) PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX R7 H R6 G M6 PACKAGE PACKING SMC 850 / 7" Plastic reel SMC 3,000 / 13" Paper reel SMC 3,000 / 13" Plastic reel Note 1: "xxxx" defines voltage from 5.0V (SMCJ5.0) to 170V (SMCJ170A) EXAMPLE EXAMPLE PART NO. SMCJ170AHR7G PART NO. SMCJ170A PART NO. SUFFIX H PACKING CODE R7 PACKING CODE SUFFIX G DESCRIPTION AEC-Q101 qualified Green compound Version: O1602 SMCJ SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 125 Non-repetitive pulse waveform shown in fig.3 PEAK PULSE POWER (PPPM) OR CURRENT(IPP) DERATING IN PERCENTAGE, % PPPM, PEAK PULSE POWER, KW 100 10 1 0.1 0.1 1 10 100 1000 100 75 50 25 0 0 10000 25 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM Peak value IPPM 100 Half value-IPPM/2 80 10/1000μs, waveform as defined by R.E.A. 60 40 20 td 0 0 0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms IFSM, PEAK FORWARD SURGE CURRENT (A) PEAK PULSE CURRENT (%) 120 100 125 150 175 200 FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY FIG. 3 CLAMPING POWER PULSE WAVEFORM tr=10μs 75 TA, AMBIENT TEMPERATURE (°C) tp, PULSE WIDTH, (μs) 140 50 1000 8.3ms single half sine wave 100 10 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE CJ, JUNCTION CAPACITANCE (pF) A 100000 UNIDIRECTIONAL BIDIRECTIONAL 10000 VR=0 1000 100 f=1.0MHz Vsig=50mVp-p VR-rated stand-off voltage 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) Version: O1602 SMCJ SERIES Taiwan Semiconductor CREAT BY ART Maximum Clamping Voltage at IPPM Vc (V) (Note5) 9.6 SMCJ5.0 GDD 6.40 7.30 10 5 1000 Maximum Peak Surge Current IPPM (A) (Note2) 164 SMCJ5.0A GDE 6.40 7.00 10 5 1000 171 9.2 SMCJ6.0 GDF 6.67 8.15 10 6 1000 138 11.4 SMCJ6.0A GDG 6.67 7.37 10 6 1000 152 10.3 SMCJ6.5 GDH 7.22 8.82 10 6.5 500 128 12.3 SMCJ6.5A GDK 7.22 7.98 10 6.5 500 140 11.2 SMCJ7.0 GDL 7.78 9.51 10 7 200 118 13.3 SMCJ7.0A GDM 7.78 8.60 10 7 200 131 12.0 SMCJ7.5 GDN 8.33 10.30 1 7.5 100 110 14.3 SMCJ7.5A GDP 8.33 9.21 1 7.5 100 122 12.9 SMCJ8.0 GDQ 8.89 10.9 1 8 50 105 15.0 SMCJ8.0A GDR 8.89 9.83 1 8 50 115 13.6 SMCJ8.5 GDS 9.44 11.5 1 8.5 20 99 15.9 SMCJ8.5A GDT 9.44 10.4 1 8.5 20 109 14.4 SMCJ9.0 GDU 10.0 12.2 1 9 10 93 16.9 SMCJ9.0A GDV 10.0 11.1 1 9 10 102 15.4 SMCJ10 GDW 11.1 13.6 1 10 5 83 18.8 SMCJ10A GDX 11.1 12.3 1 10 5 92 17.0 SMCJ11 GDY 12.2 14.9 1 11 1 78 20.1 SMCJ11A GDZ 12.2 13.5 1 11 1 86 18.2 SMCJ12 GED 13.3 16.3 1 12 1 71 22.0 SMCJ12A GEE 13.3 14.7 1 12 1 79 19.9 SMCJ13 GEF 14.4 17.6 1 13 1 66 23.8 SMCJ13A GEG 14.4 15.9 1 13 1 73 21.5 SMCJ14 GEH 15.6 19.1 1 14 1 61 25.8 SMCJ14A GEK 15.6 17.2 1 14 1 67 23.2 SMCJ15 GEL 16.7 20.4 1 15 1 58 26.9 SMCJ15A GEM 16.7 18.5 1 15 1 64 24.4 SMCJ16 GEN 17.8 21.8 1 16 1 54 28.8 SMCJ16A GEP 17.8 19.7 1 16 1 60 26.0 SMCJ17 GEQ 18.9 23.1 1 17 1 51 30.5 SMCJ17A GER 18.9 20.9 1 17 1 57 27.6 SMCJ18 GES 20.0 24.4 1 18 1 48 32.2 SMCJ18A GET 20.0 22.1 1 18 1 53 29.2 SMCJ20 GEU 22.2 27.1 1 20 1 43 35.8 SMCJ20A GEV 22.2 24.5 1 20 1 48 32.4 SMCJ22 GEW 24.4 29.8 1 22 1 39 39.4 SMCJ22A GEX 24.4 26.9 1 22 1 44 35.5 SMCJ24 GEY 26.7 32.6 1 24 1 36 43.0 SMCJ24A GEZ 26.7 29.5 1 24 1 40 38.9 SMCJ26 GFD 28.9 35.3 1 26 1 33 46.6 SMCJ26A GFE 28.9 31.9 1 26 1 37 42.1 SMCJ28 GFF 31.1 38.0 1 28 1 31 50.0 SMCJ28A GFG 31.1 34.4 1 28 1 34 45.4 SMCJ30 GFH 33.3 40.7 1 30 1 29 53.5 SMCJ30A GFK 33.3 36.8 1 30 1 32 48.4 SMCJ33 GFL 36.7 44.9 1 33 1 26 59.0 SMCJ33A GFM 36.7 40.6 1 33 1 29 53.3 SMCJ36 GFN 40.0 48.9 1 36 1 24 64.3 SMCJ36A GFP 40.0 44.2 1 36 1 27 58.1 Device Breakdown Voltage Test Stand-Off Maximum VBR (V) Current Voltage Reverse Leakage at IT IT VWM @ VWM Device Marking Code Min Max (mA) (V) IR (μA) (Note3) Version: O1602 SMCJ SERIES Taiwan Semiconductor CREAT BY ART Maximum Clamping Voltage at IPPM Vc (V) (Note5) 71.4 SMCJ40 GFQ 44.4 54.3 1 40 1 Maximum Peak Surge Current IPPM (A) (Note2) 22 SMCJ40A GFR 44.4 49.1 1 40 1 24 64.5 SMCJ43 GFS 47.8 58.4 1 43 1 20 76.7 SMCJ43A GFT 47.8 52.8 1 43 1 22 69.4 SMCJ45 GFU 50.0 61.1 1 45 1 19 80.3 SMCJ45A GFV 50.0 55.3 1 45 1 21 72.7 SMCJ48 GFW 53.3 65.1 1 48 1 18 85.5 SMCJ48A GFX 53.3 58.9 1 48 1 20 77.4 SMCJ51 GFY 56.7 69.3 1 51 1 17 91.1 SMCJ51A GFZ 56.7 62.7 1 51 1 19 82.4 SMCJ54 GGD 60.0 73.3 1 54 1 16 96.3 SMCJ54A GGE 60.0 66.3 1 54 1 18 87.1 SMCJ58 GGF 64.4 78.7 1 58 1 15 103 SMCJ58A GGG 64.4 71.2 1 58 1 16 93.6 SMCJ60 GGH 66.7 81.5 1 60 1 14 107 SMCJ60A GGK 66.7 73.7 1 60 1 16 96.8 SMCJ64 GGL 71.1 86.9 1 64 1 13.8 114 SMCJ64A GGM 71.1 78.6 1 64 1 15 103 SMCJ70 GGN 77.8 95.1 1 70 1 12.6 125 SMCJ70A GGP 77.8 86.0 1 70 1 13.9 113 SMCJ75 GGQ 83.3 102 1 75 1 11.7 134 SMCJ75A GGR 83.3 92.1 1 75 1 13 121 SMCJ78 GGS 86.7 106 1 78 1 11.3 139 SMCJ78A GGT 86.7 95.8 1 78 1 12.5 126 SMCJ85 GGU 94.4 115 1 85 1 10.4 151 SMCJ85A GGV 94.4 104 1 85 1 11.5 137 SMCJ90 GGW 100 122 1 90 1 9.8 160 SMCJ90A GGX 100 111 1 90 1 10.7 146 SMCJ100 GGY 111 136 1 100 1 8.8 179 SMCJ100A GGZ 111 123 1 100 1 9.7 162 SMCJ110 GHD 122 149 1 110 1 8 196 SMCJ110A GHE 122 135 1 110 1 8.9 177 SMCJ120 GHF 133 163 1 120 1 7.3 214 SMCJ120A GHG 133 147 1 120 1 8.1 193 SMCJ130 GHH 144 176 1 130 1 6.8 231 SMCJ130A GHK 144 159 1 130 1 7.5 209 SMCJ150 GHL 167 204 1 150 1 5.8 266 SMCJ150A GHM 167 185 1 150 1 6.4 243 SMCJ160 GHN 178 218 1 160 1 5.4 287 SMCJ160A GHP 178 197 1 160 1 6 259 SMCJ170 GHQ 189 231 1 170 1 5.1 304 SMCJ170A GHR 189 209 1 170 1 5.7 275 Device Device Marking Code Breakdown Voltage Test Stand-Off Maximum VBR (V) Current Voltage Reverse Leakage at IT IT VWM @ VWM Min Max (mA) (V) IR (μA) (Note3) Notes: 1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent. 2. Surge current waveform per figure. 3 and derate per figure. 2. 3. For bipolar types having VWM of 10 volts and less, the IR limit is doubled. 4. All terms and symbols are consistent with ANSI/IEEE C62.35. Version: O1602 SMCJ SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) Unit (mm) DIM. Unit (inch) Min Max Min Max A 2.90 3.20 0.114 0.126 B 6.60 7.11 0.260 0.280 C 5.59 6.22 0.220 0.245 D 2.00 2.62 0.079 0.103 E 1.00 1.60 0.039 0.063 F 7.75 8.13 0.305 0.320 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 3.3 0.130 B 2.5 0.098 C 6.8 0.268 D 4.4 0.173 E 9.4 0.370 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Note: Cathode band for uni-directional products only Version: O1602 SMCJ SERIES Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: O1602