SMCJ Series Transient Voltage Suppressors PRODUCT SUMMARY Stand-off Voltage ratings from 5.0V to 440V Peak pulse power 1500W in SMC surface-mount package FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile package with built-in strain relief for surface-mount Glass passivated junction Low incremental surge resistance, excellent clamping capability Peak pulse power capability of 1500W with a 10/1000us waveform, repetition rate (duty cycle): 0.01% Very fast response time High temperature soldering guaranteed: 260°C for 10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AB (SMC) molded plastic over passivated chip Terminals: Matte-Sn plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation. Mounting position: Any Weight: 0.007oz., 0.21g Pb-free; RoHS-compliant Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. SMCJ10CA). Electrical characteristics apply in both directions. MAXIMUM RATINGS Rating at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit P PPM Minimum 1500 W IPPM See Next Table A IFSM 200 A RθJA 75 °C/W RθJL 15 °C/W TJ, TSTG -55 to +150 °C Peak pulse power dissipation with a 10/1000us waveform (1,2) (see Fig. 1) Peak pulse current with a 10/1000us waveform (1) Peak forward surge current, 8.3ms single half sine-wave uni-directional only (2) Typical thermal resistance, junction to ambient (3) Typical thermal resistance, junction to lead Operating junction and storage temperature range Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2. 2. Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal 3. Mounted on minimum recommended pad layout 9/21/2006 Rev.4.01 www.SiliconStandard.com 1 of 4 SMCJ Series ELECTRICAL PARAMETERS At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Device marking co d e Breakdow n voltage V(BR) (Volts) (1) Stand-off voltage VWM (Volts) Maximum reverse leakage at VWM ID(3) (uA) Maximum peak pulse surge current IPPM(2) (A) Maximum clamping voltage at IPPM VC (Volts) 9.6 Device type UNI BI Min. Max. Test current at IT (mA) SMCJ5.0 GDD BD D 6.40 7.82 10 5.0 1000 156.3 GDE BD E 6.40 7.07 10 5.0 1000 163.0 9.2 SMCJ6.0 GDF BD F 6.67 8.15 10 6.0 1000 131.6 11.4 SMCJ6.0A GDG BD G 6.67 7.37 10 6.0 1000 145.6 10.3 SMCJ6.5 GDH BD H 7.22 8.82 10 6.5 500 122.0 12.3 SMCJ6.5A GDK BD K 7.22 7.98 10 6.5 500 133.9 11.2 SMCJ7.0 GDL BD L 7.78 9.51 10 7.0 200 112.8 13.3 12.0 SMCJ5.0A (5) SMCJ7.0A GDM BD M 7.78 8.60 10 7.0 200 125.0 SMCJ7.5 GDN BD N 8.33 10.2 1.0 7.5 100 104.9 14.3 SMCJ7.5A GDP BD P 8.33 9.21 1.0 7.5 100 116.3 12.9 SMCJ8.0 GDQ BD Q 8.89 10.9 1.0 8.0 50 100.0 15.0 SMCJ8.0A GDR BD R 8.89 9.83 1.0 8.0 50 110.3 13.6 SMCJ8.5 GDS BD S 9.44 11.5 1.0 8.5 20 94.3 15.9 SMCJ8.5A GDT BD T 9.44 10.4 1.0 8.5 20 104.2 14.4 SMCJ9.0 GDU BD U 10.0 12.2 1.0 9.0 10.0 88.8 16.9 SMCJ9.0A GDV BD V 10.0 11.1 1.0 9.0 10.0 97.4 15.4 SMCJ10 GDW BD W 11.1 13.6 1.0 10 5.0 79.8 18.8 SMCJ10A GDX BD X 11.1 12.3 1.0 10 5.0 88.2 17.0 SMCJ11 GDY BD Y 12.2 14.9 1.0 11 5.0 74.6 20.1 SMCJ11A GDZ BD Z 12.2 13.5 1.0 11 5.0 82.4 18.2 22.0 SMCJ12 GED BED 13.3 16.3 1.0 12 5.0 68.2 SMCJ12A GEE BEE 13.3 14.7 1.0 12 5.0 75.4 19.9 SMCJ13 GEF BEF 14.4 17.6 1.0 13 1.0 63.0 23.8 SMCJ13A GEG BEG 14.4 15.9 1.0 13 1.0 69.8 21.5 SMCJ14 GEH BEH 15.6 19.1 1.0 14 1.0 58.1 25.8 SMCJ14A GEK BEK 15.6 17.2 1.0 14 1.0 64.7 23.2 SMCJ15 GEL BEL 16.7 20.4 1.0 15 1.0 55.8 26.9 SMCJ15A GEM BEM 16.7 18.5 1.0 15 1.0 61.5 24.4 SMCJ16 GEN BEN 17.8 21.8 1.0 16 1.0 52.1 28.8 26.0 SMCJ16A GEP BEP 17.8 19.7 1.0 16 1.0 57.7 SMCJ17 GEQ BEQ 18.9 23.1 1.0 17 1.0 49.2 30.5 SMCJ17A GER BER 18.9 20.9 1.0 17 1.0 54.3 27.6 SMCJ18 GES BES 20.0 24.4 1.0 18 1.0 46.6 32.2 SMCJ18A GET BET 20.0 22.1 1.0 18 1.0 51.4 29.2 SMCJ20 GEU BEU 22.2 27.1 1.0 20 1.0 41.9 35.8 SMCJ20A GEV BEV 22.2 24.5 1.0 20 1.0 46.3 32.4 SMCJ22 GEW BEW 24.4 29.8 1.0 22 1.0 38.1 39.4 SMCJ22A GEX BEX 24.4 26.9 1.0 22 1.0 42.3 35.5 43.0 SMCJ24 GEY BEY 26.7 32.6 1.0 24 1.0 34.9 SMCJ24A GEZ BEZ 26.7 29.5 1.0 24 1.0 38.6 38.9 SMCJ26 GFD B FD 28.9 35.3 1.0 26 1.0 32.2 46.6 SMCJ26A GFE B FE 28.9 31.9 1.0 26 1.0 35.6 42.1 SMCJ28 GFF B FF 31.1 38.0 1.0 28 1.0 30.0 50.0 45.4 SMCJ28A GFG B FG 31.1 34.4 1.0 28 1.0 33.0 SMCJ30 GFH B FH 33.3 40.7 1.0 30 1.0 28.0 53.5 SMCJ30A GFK B FK 33.3 36.8 1.0 30 1.0 31.0 48.4 Notes: 9/21/2006 Rev.4.01 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For the bi-directional SMCG/SMCJ5.0CA, the maximum V(BR) is 7.25V. www.SiliconStandard.com 2 of 4 SMCJ Series ELECTRICAL PARAMETERS At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Device marking co d e Stand-off voltage VWM (Volts) Maximum reverse leakage at VWM ID(3) (uA) Maximum peak pulse surge current IPPM(2) (A) Maximum clamping voltage at IPPM VC (Volts) Device type UNI BI Min. Max. Test current at IT (mA) SMCJ33 GFL B FL 36.7 44.9 1.0 33 1.0 25.4 59.0 SMCJ33A GFM B FM 36.7 40.6 1.0 33 1.0 28.1 53.3 SMCJ36 GFN B FN 40.0 48.9 1.0 36 1.0 23.3 64.3 SMCJ36A GFP B FP 40.0 44.2 1.0 36 1.0 25.8 58.1 SMCJ40 GFQ B FQ 44.4 54.3 1.0 40 1.0 21.0 71.4 SMCJ40A GFR B FR 44.4 49.1 1.0 40 1.0 23.3 64.5 SMCJ43 GFS B FS 47.8 58.4 1.0 43 1.0 19.6 76.7 SMCJ43A GFT B FT 47.8 52.8 1.0 43 1.0 21.6 69.4 SMCJ45 GFU B FU 50.0 61.1 1.0 45 1.0 18.7 80.3 SMCJ45A GFV B FV 50.0 55.3 1.0 45 1.0 20.6 72.7 SMCJ48 GFW B FW 53.3 65.1 1.0 48 1.0 17.5 85.5 SMCJ48A GFX B FX 53.3 58.9 1.0 48 1.0 19.4 77.4 SMCJ51 GFY B FY 56.7 69.3 1.0 51 1.0 16.5 91.1 SMCJ51A GFZ B FZ 56.7 62.7 1.0 51 1.0 18.2 82.4 SMCJ54 GGD BGD 60.0 73.3 1.0 54 1.0 15.6 96.3 SMCJ54A GGE BGE 60.0 66.3 1.0 54 1.0 17.2 87.1 SMCJ58 GGF BGF 64.4 78.7 1.0 58 1.0 14.6 103 SMCJ58A GGG BGG 64.4 71.2 1.0 58 1.0 16.0 93 SMCJ60 GGH BGH 66.7 81.5 1.0 60 1.0 14.0 107 SMCJ60A GGK BGK 66.7 73.7 1.0 60 1.0 15.5 96 SMCJ64 GGL BGL 71.1 86.9 1.0 64 1.0 13.2 114 SMCJ64A GGM BGM 71.1 78.6 1.0 64 1.0 14.6 103 SMCJ70 GGN BGN 77.8 95.1 1.0 70 1.0 12.0 125 SMCJ70A GGP BGP 77.8 86.0 1.0 70 1.0 13.3 113 SMCJ75 GGQ BGQ 83.3 102 1.0 75 1.0 11.2 134 SMCJ75A GGR BGR 83.3 92.1 1.0 75 1.0 12.4 121 SMCJ78 GGS BGS 86.7 106 1.0 78 1.0 10.8 139 126 SMCJ78A GGT BGT 86.7 95.8 1.0 78 1.0 11.9 SMCJ85 GGU BGU 94.4 115 1.0 85 1.0 9.9 151 SMCJ85A GGV BGV 94.4 104 1.0 85 1.0 10.9 137 SMCJ90 GGW BGW 100 122 1.0 90 1.0 9.4 160 SMCJ90A GGX BGX 100 111 1.0 90 1.0 10.3 146 SMCJ100 GGY BGY 111 136 1.0 100 1.0 8.4 179 SMCJ100A GGZ BGZ 111 123 1.0 100 1.0 9.3 162 SMCJ110 GHD BHD 122 149 1.0 110 1.0 7.7 196 SMCJ110A GHE BHE 122 135 1.0 110 1.0 8.5 177 SMCJ120 GHF BHF 133 163 1.0 120 1.0 7.0 214 SMCJ120A GHG BHG 133 147 1.0 120 1.0 7.8 193 SMCJ130 GHH BHH 144 176 1.0 130 1.0 6.5 231 SMCJ130A GHK BHK 144 159 1.0 130 1.0 7.2 209 268 SMCJ150 GHL BHL 167 204 1.0 150 1.0 5.6 SMCJ150A GHM BHM 167 185 1.0 150 1.0 6.2 243 SMCJ160 GHN BHN 178 218 1.0 160 1.0 5.2 287 259 SMCJ160A GHP BHP 178 197 1.0 160 1.0 5.8 SMCJ170 GHQ BHQ 189 231 1.0 170 1.0 4.9 304 SMCJ170A GHR BHR 189 209 1.0 170 1.0 5.5 275 292 SMCJ180A GHT BHT 209 222 1.0 180 1.0 5.0 SMCJ200A GHV BHV 224 247 1.0 200 1.0 4.6 324 SMCJ220A GHX BHX 246 272 1.0 220 1.0 4.2 356. SMCJ250A GHZ BHZ 279 309 1.0 250 1.0 3.7 405 SMCJ300A GJE B JE 335 371 1.0 300 1.0 3.1 486 SMCJ350A GJG B JG 391 432 1.0 350 1.0 2.6 567 SMCJ400A GJK B JK 447 494 1.0 400 1.0 2.3 648 SMCJ440A GJM B JM 492 543 1.0 440 1.0 2.1 713 Notes: 9/21/2006 Rev.4.01 Breakdow n voltage V(BR) (Volts) (1) 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For parts without A, the VBR is +10% www.SiliconStandard.com 3 of 4 SMCJ Series RATINGS AND CHARACTERISTIC CURVES Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 9/21/2006 Rev.4.01 www.SiliconStandard.com 4 of 4