UGA15120 Taiwan Semiconductor CREAT BY ART 15A, 1200V Super Fast Power Rectifier FEATURES - Superfast, soft recovery characteristics - High junction temperature up to 175°C - Negligible leakage sustain the high operation temperature - Planar passivated for voltage ruggedness and reliability - Very low stored charge and its soft recovery minimize ringing and 1 electronica noise to reduce power loss in associated MOSFET or IGBT - High capability for high di/dt operation. - High surge current capability 2 TO-220AC - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 TYPICAL APPLICATIONS Ideal solution used as freewheeling diodes , features extremely low peak recovery current helping to significantly reduce snubbing, and lower switching losses in IGBT, especially as heavy duty applications demanding long term reliability. Such as inverters , Uninterrupted Power Supply, motor drive and other mission-critical systems where the high frequency and high efficiency is needed. The series with negligible leakage, is an immediately competitive advantage for high temperature environment. MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm Weight: 1.7g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL UGA15120 UNIT Maximum repetitive peak reverse voltage VRRM 1200 V Maximum average forward rectified current IF(AV) 15 A Non-repetitive peak forward surge current 8.3ms single sine-wave IFSM 200 A VF 2.9 V Maximum instantaneous forward voltage (Note 1) IF= 15 A Maximum reverse current @ Rated VR TJ=25 °C TJ=125 °C IR Reverse Recovery Time TJ=25°C, IF=0.5A, IR=1A, IRR=0.25A trr TJ=25°C, IF=1A, dIF/dt= -100A/µs, VR=30V Typical thermal resistance Operating junction temperature range Storage temperature range RθJC TYP MAX 1 5 5 100 TYP MAX 48 58 - 65 μA ns 2 °C/W TJ - 55 to +175 °C TSTG - 55 to +175 °C Note 1: Pulse test with PW=300 μs, 1% duty cycle Document Number: DS_D1501012 Version: C15 UGA15120 Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING SUFFIX CODE H C0 UGA15120 PACKING CODE SUFFIX (*) G PACKAGE PACKING TO-220AC 50 / Tube *: Optional available EXAMPLE PREFERRED P/N PART NO. UGA15120HC0G UGA15120 PART NO. PACKING CODE SUFFIX H PACKING CODE DESCRIPTION SUFFIX C0 AEC-Q101 qualified Green compound G RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AVERAGE FORWARD A CURRENT (A) 20 15 10 5 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 200 8.3ms Single Half Sine Wave 150 100 50 0 1 10 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (°C) FIG. 3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4 TYPICAL REVERSE CHARACTERISTICS 100 100 INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS FORWARD CURRENT (A) Pulse Width=300μs 1% Duty Cycle 10 TJ=125°C TJ=25°C 1 10 TJ=125°C 1 TJ=25°C 0.1 0.01 0.1 0 0.5 1 1.5 2 FORWARD VOLTAGE (V) Document Number: DS_D1501012 2.5 3 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: C15 UGA15120 Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE (pF) A 1000 100 f=1.0MHz Vsig=50mVp-p 10 0.1 1 10 100 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS TO-220AC DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 0.00 1.60 0.000 0.063 H 13.19 14.79 0.519 0.582 I 4.95 5.20 0.195 0.205 J 4.42 4.76 0.174 0.187 K 1.14 1.40 0.045 0.055 L 5.84 6.86 0.230 0.270 M 2.20 2.80 0.087 0.110 N 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1501012 Version: C15 UGA15120 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1501012 Version: C15