MBR735 thru MBR7150 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AC MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.85 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR MBR 735 745 750 760 790 7100 7150 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 V Maximum average forward rectified current IF(AV) 7.5 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 15 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=7.5 A, TJ=25℃ IF=7.5 A, TJ=125℃ IF=15 A, TJ=25℃ IF=15 A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range VF IR 1 0.5 A - 0.75 0.92 0.95 0.57 0.65 0.82 0.92 0.84 - - - 0.72 - - - 0.1 15 10 5 V mA dV/dt 10000 RθJC RθJA 5 15 TJ - 55 to +150 O C TSTG - 55 to +175 O C V/μs O C/W Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1308048 Version: J13 MBR735 thru MBR7150 Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PART NO. QUALIFIED MBR7xx (Note 1) PACKING CODE Prefix "H" GREEN COMPOUND CODE C0 Suffix "G" PACKAGE PACKING TO-220AC 50 / Tube Note 1: "xx" defines voltage from 35V (MBR735) to 150V (MBR7150) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. PACKING CODE MBR760 C0 MBR760 C0 MBR760 C0G MBR760 C0 MBR760HC0 MBR760 QUALIFIED H GREEN COMPOUND CODE G DESCRIPTION Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD A CURRENT (A) 10 8 6 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 4 2 MBR735-MBR745 MBR750-MBR7150 0 0 50 100 150 PEAK FORWARD SURGE CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 8.3ms Single Half Sine Wave JEDEC Method 150 125 100 75 50 25 1 10 FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 100 10 TJ=125℃ 1 TJ=25℃ 0.1 MBR735-MBR745 MBR750-MBR760 MBR790-MBR7150 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1308048 1 1.1 1.2 INSTANTANEOUS REVERSE CURRENT (mA) MBR735-745 MBR750-7150 Pulse Width=300μs 1% Duty Cycle INSTANTANEOUS FORWARD CURRENT (A) 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) 10 TJ=125℃ 1 0.1 TJ=75℃ 0.01 TJ=25℃ 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: J13 MBR735 thru MBR7150 Taiwan Semiconductor FIG. 5- TYPICAL JUNCTION CAPACITANCE 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 1000 10 100 MBR735-MBR745 MBR750-MBR760 MBR790-MBR7150 10 0.1 1 10 100 1 0.1 0.01 0.1 REVERSE VOLTAGE (V) 1 10 100 T-PULSE DURATION. (sec) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 0.00 1.60 0.000 0.063 H 13.19 14.79 0.519 0.582 I 4.95 5.20 0.195 0.205 J 4.42 4.76 0.174 0.187 K 1.14 1.40 0.045 0.055 L 5.84 6.86 0.230 0.270 M 2.20 2.80 0.087 0.110 N 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1308048 Version: J13 MBR735 thru MBR7150 Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1308048 Version: J13