mm3134

HFA3134 8.5GHz NPN Matched
Transistor Pair SPICE Model
TM
Application Note
June 1998
MM3134
Introduction
Parameters Not Modeled
This application note describes the SPICE transistor model
for the bipolar devices that comprise the HFA3134, Ultra
High Frequency Transistor Array. This array is fabricated with
Intersil's complementary bipolar UHF1X process and
contains a pair of hfe and VBE matched transistors. These
transistors exhibit peak fT's of 9.5GHz, as illustrated by the
included performance curves.
Some effects haven’t been included in this model. The major
exclusions are listed below:
• Temperature Effects
• Breakdown Effects
• Noise Effects
Future releases of this model may include some of these
effects.
Model Description
While this model was developed for the PSPICE™ simulator
from MicroSim Corporation, it may be adaptable to other
simulators. The performance curves included in this
document were generated using PSPICE. A cdsSPICE
compatible version of the model is available upon request.
The PSPICE model contains parameters for a UHF1X NPN
transistor of the geometry utilized on the HFA3134.
Parameters not listed in the model should be allowed to
default.
The model emulates typical rather than worst case,
packaged devices, at an ambient temperature of 25oC.
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Copyright
© Intersil Corporation 2000
Application Note 3134
PSPICE Listing
*
*COPYRIGHT © 1998 INTERSIL CORPORATION
*ALL RIGHTS RESERVED
*
*HFA3134 PSPICE MODEL
*REV: 5-98
*
***** UHF1XN - LE = 1.3 WE = 64*****
*
*
----- BJT MODEL -----
*
.model HFA3134 NPN
+
(IS = 1.98E - 16
VAF = 2.00E + 01
BF = 1.20E + 02
IKF = 2.10E + 00
+
ISE = 7.70E - 15
NE = 2.00E + 00
VAR = 2.64E + 00
BR = 1.78E + 01
+
IKR = 6.10E - 03
ISC = 2.26E - 16
NC = 1.57E + 00
NK = 3.00E + 00
+
CJC = 6.00E - 13
MJC = 3.80E - 01
VJC = 6.00E - 01
CJE = 7.00E - 13
+
MJE = 5.10E- 01
VJE = 8.72E - 01
XCJC = 9.00E - 01
CJS = 1.39E - 13
+
VJS = 7.50E - 01
MJS = 0.00E + 00
FC = 5.00E - 01
TR = 2.50E - 09
+
TF = 1.30E - 11
ITF = 2.80E - 01
XTF = 2.01E + 01
VTF = 2.37E + 00
+
PTF = 3.70E + 01
RC = 5.25E + 00
RE = 8.70E -01
RB = 1.29E + 01
+
RBM = 6.47E + 00
KF = 0.00E + 00
AF = 1.00E + 00)
*
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Application Note 3134
Model Performance
10
VCE = 5V
20
IB = 200µA
18
8
IB = 160µA
14
VCE = 3V
6
IC (mA)
fT (GHz)
16
VCE = 1V
4
IB = 120µA
12
10
IB = 80µA
8
6
2
IB = 40µA
4
2
0
100µA
300µA
1.0mA
3.0mA
IC
10mA
30mA
0
100mA
0
0.5
1.0
100mA
VCE = 5V
3.5
4.0
4.5
5.0
VCB = 0V
1mA
100
100µA
CURRENT
90
hFE
3.0
10mA
110
VCE = 1V
80
VCE = 3V
60
IC
10µA
IB
1µA
100nA
10nA
50
40
1nA
30
100pA
20
1nA
2.5
FIGURE 2. NPN IC vs VCE
130
70
2.0
VCE (V)
FIGURE 1. NPN fT vs IC
120
1.5
10nA 100nA
1µA
10µA 100µA 1mA
IC
FIGURE 3. NPN hFE vs IC
10mA 100mA
10pA
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VBE (V)
FIGURE 4. NPN IC AND IB vs VBE
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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