HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model TM Application Note June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with Intersil's complementary bipolar UHF1X process and contains a pair of hfe and VBE matched transistors. These transistors exhibit peak fT's of 9.5GHz, as illustrated by the included performance curves. Some effects haven’t been included in this model. The major exclusions are listed below: • Temperature Effects • Breakdown Effects • Noise Effects Future releases of this model may include some of these effects. Model Description While this model was developed for the PSPICE™ simulator from MicroSim Corporation, it may be adaptable to other simulators. The performance curves included in this document were generated using PSPICE. A cdsSPICE compatible version of the model is available upon request. The PSPICE model contains parameters for a UHF1X NPN transistor of the geometry utilized on the HFA3134. Parameters not listed in the model should be allowed to default. The model emulates typical rather than worst case, packaged devices, at an ambient temperature of 25oC. 3-1 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 Application Note 3134 PSPICE Listing * *COPYRIGHT © 1998 INTERSIL CORPORATION *ALL RIGHTS RESERVED * *HFA3134 PSPICE MODEL *REV: 5-98 * ***** UHF1XN - LE = 1.3 WE = 64***** * * ----- BJT MODEL ----- * .model HFA3134 NPN + (IS = 1.98E - 16 VAF = 2.00E + 01 BF = 1.20E + 02 IKF = 2.10E + 00 + ISE = 7.70E - 15 NE = 2.00E + 00 VAR = 2.64E + 00 BR = 1.78E + 01 + IKR = 6.10E - 03 ISC = 2.26E - 16 NC = 1.57E + 00 NK = 3.00E + 00 + CJC = 6.00E - 13 MJC = 3.80E - 01 VJC = 6.00E - 01 CJE = 7.00E - 13 + MJE = 5.10E- 01 VJE = 8.72E - 01 XCJC = 9.00E - 01 CJS = 1.39E - 13 + VJS = 7.50E - 01 MJS = 0.00E + 00 FC = 5.00E - 01 TR = 2.50E - 09 + TF = 1.30E - 11 ITF = 2.80E - 01 XTF = 2.01E + 01 VTF = 2.37E + 00 + PTF = 3.70E + 01 RC = 5.25E + 00 RE = 8.70E -01 RB = 1.29E + 01 + RBM = 6.47E + 00 KF = 0.00E + 00 AF = 1.00E + 00) * 3-2 Application Note 3134 Model Performance 10 VCE = 5V 20 IB = 200µA 18 8 IB = 160µA 14 VCE = 3V 6 IC (mA) fT (GHz) 16 VCE = 1V 4 IB = 120µA 12 10 IB = 80µA 8 6 2 IB = 40µA 4 2 0 100µA 300µA 1.0mA 3.0mA IC 10mA 30mA 0 100mA 0 0.5 1.0 100mA VCE = 5V 3.5 4.0 4.5 5.0 VCB = 0V 1mA 100 100µA CURRENT 90 hFE 3.0 10mA 110 VCE = 1V 80 VCE = 3V 60 IC 10µA IB 1µA 100nA 10nA 50 40 1nA 30 100pA 20 1nA 2.5 FIGURE 2. NPN IC vs VCE 130 70 2.0 VCE (V) FIGURE 1. NPN fT vs IC 120 1.5 10nA 100nA 1µA 10µA 100µA 1mA IC FIGURE 3. NPN hFE vs IC 10mA 100mA 10pA 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VBE (V) FIGURE 4. NPN IC AND IB vs VBE All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3-3