VS-183NQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 180 A FEATURES • 175 °C TJ operation Lug terminal anode • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified for industrial level Base cathode • UL approved file E222165 HALF-PAK (D-67) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY IF(AV) 180 A VR 100 V Package HALF-PAK (D-67) Circuit Single diode The VS-183NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform IFSM tp = 5 μs sine 180 Apk, TJ = 125 °C TJ Range UNITS 180 A 100 V 22 000 A 0.73 V -55 to +175 °C VS-183NQ100PbF UNITS 100 V VRRM VF VALUES VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 128 °C, rectangular waveform 240 Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A Repetitive avalanche current 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 22 000 UNITS A 2500 Revision: 19-Mar-15 Document Number: 94461 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-183NQ100PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 180 A Maximum forward voltage drop See fig. 1 VFM (1) 180 A IRM (1) 1.23 0.9 4.5 VR = Rated VR TJ = 125 °C CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS From top of terminal hole to mounting plane dV/dt mA 60 Maximum junction capacitance Maximum voltage rate of change V 0.73 TJ = 125 °C TJ = 25 °C UNITS 0.91 TJ = 25 °C 360 A 360 A Maximum reverse leakage current See fig. 2 VALUES 4150 pF 6.0 nH 10 000 V/μs VALUES UNITS -55 to 175 °C Rated VR Note (1) Pulse width = 500 μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 0.28 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.05 °C/W Approximate weight minimum Mounting torque oz. 3.4 (30) maximum N·m (lbf · in) 5 (44.2) HALF-PAK module 1000 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 1.06 4 (35.4) Non-lubricated threads minimum Case style 100 TJ = 125 °C 10 TJ = 25 °C 1 100 TJ = 175 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 94461_01 g 3 (26.5) maximum Terminal torque 30 0.5 1.0 1.5 2.0 2.5 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 94461_02 20 30 40 50 60 70 80 90 100 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Mar-15 Document Number: 94461 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-183NQ100PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 °C 100 0 10 20 30 40 50 60 70 80 90 100 110 VR - Reverse Voltage (V) 94461_03 ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 0.01 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 94461_04 250 200 180 160 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics DC 140 120 Square wave (D = 0.50) 80 % rated VR applied 100 80 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 200 150 100 RMS limit DC 50 See note (1) 0 60 0 94461_05 50 100 150 200 250 0 300 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 94461_06 50 100 150 200 250 300 350 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 19-Mar-15 Document Number: 94461 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-183NQ100PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 1000 100 10 000 tp - Square Wave Pulse Duration (µs) 94461_07 Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR ORDERING INFORMATION TABLE Device code VS- 18 3 N Q 1 2 3 4 5 100 PbF 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - N = Not isolated 5 - Q = Schottky rectifier diode 6 - Voltage rating (100 = 100 V) 7 - Lead (Pb)-free 7 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 19-Mar-15 Document Number: 94461 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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