VS-123NQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 120 A FEATURES • 175 °C TJ operation Lug terminal anode • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified for industrial level Base cathode HALF-PAK (D-67) • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY DESCRIPTION IF(AV) 120 A VR 100 V Package HALF-PAK (D-67) Circuit Single diode The VS-123NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 120 Apk, TJ = 125 °C TJ Range VALUES UNITS 120 A 100 V 12 800 A 0.73 V -55 to 175 °C VS-123NQ100PbF UNITS 100 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 120 A Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A Repetitive avalanche current 50 % duty cycle at TC = 133 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 12 800 A 1800 Revision:19-Mar-15 Document Number: 94129 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-123NQ100PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 120 A Maximum forward voltage drop See fig. 1 VFM (1) VALUES 0.91 TJ = 25 °C 240 A 120 A 1.26 TJ = 25 °C 0.9 3 Maximum reverse leakage current See fig. 2 IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt VR = Rated VR TJ = 125 °C V 0.73 TJ = 125 °C 240 A UNITS mA 40 Rated VR 2650 pF 7.0 nH 10 000 V/μs VALUES UNITS -55 to 175 °C Note (1) Pulse width = 500 μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 0.38 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.05 Approximate weight minimum Mounting torque g oz. 4 (35.4) Non-lubricated threads minimum 3.4 (30) maximum N m (lbf in) 5 (44.2) Case style HALF-PAK module 1000 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 30 1.06 3 (26.5) maximum Terminal torque °C/W 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 1 0.001 0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision:19-Mar-15 Document Number: 94129 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-123NQ100PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 10 20 30 40 50 60 70 80 90 100 110 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 0.01 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 1 0.1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 120 170 Average Power Loss (W) Allowable Case Temperature (°C) 180 160 DC 150 140 Square wave (D = 0.50) 80 % rated VR applied 130 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 80 RMS limit 60 40 DC 20 See note (1) 0 100 0 30 60 90 120 150 180 0 20 40 60 80 100 120 140 160 180 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision:19-Mar-15 Document Number: 94129 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-123NQ100PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 10 000 1000 100 10 10 000 1000 100 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR ORDERING INFORMATION TABLE Device code VS- 12 3 N Q 1 2 3 4 5 100 PbF 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - N = Not isolated 5 - Q = Schottky rectifier diode 6 - Voltage rating (100 = 100 V) 7 - Lead (Pb)-free 7 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision:19-Mar-15 Document Number: 94129 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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