Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y Silicon PNP epitaxial planer transistor For digital circuits 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 ● +0.25 0.65±0.15 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.9 –0.05 ● 1.9±0.2 ■ Unit: mm +0.2 2.8 –0.3 Features 2 ● ● ● ■ Absolute Maximum Ratings +0.1 0.8 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0 to 0.1 ● Marking Symbol (R1) 7A 2.2kΩ 7B 4.7kΩ 7C 10kΩ 7D 2.2kΩ 7I 0.27kΩ 7Y 3.1kΩ +0.2 ● UN2121 UN2122 UN2123 UN2124 UN212X UN212Y 1.1 –0.1 ● 0.16 –0.06 ■ Resistance by Part Number EIAJ:SC-59 Mini Type Package (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Internal Connection R1 C B R2 E 1 Transistors with built-in Resistor ■ Electrical Characteristics UN2121/2122/2123/2124/212X/212Y (Ta=25˚C) Parameter Symbol Collector cutoff current UN212X Collector cutoff current UN212X Conditions min VCB = –50V, IE = 0 –1 ICBO VCB = –50V, IE = 0 – 0.1 ICEO VCE = –50V, IB = 0 –1 ICEO VCE = –50V, IB = 0 – 0.5 IEBO VEB = –6V, IC = 0 –2 VCBO IC = –10µA, IE = 0 UN2123/2124 –50 UN2121 40 UN2122/212Y 50 hFE UN2123/2124 VCE = –10V, IC = –100mA UN212X 60 VCE(sat) IC = –100mA, IB = –5mA – 0.25 VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 UN212Y VCE(sat) IC = –50mA, IB = –5mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 500Ω Output voltage low level VOL VCC = –5V, VB = –3.5V, RL = 500Ω Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz – 0.2 200 2.2 4.7 R1 (–30%) UN212X UN212Y (+30%) 3.1 0.8 UN2124 R1/R2 UN212X UN212Y 1.0 0.22 0.054 0.67 Common characteristics chart PT — Ta 250 200 150 100 50 0 60 10 80 100 120 140 160 Ambient temperature Ta (˚C) V MHz 0.27 Resistance ratio Total power dissipation PT (mW) V UN2122 UN2123 V – 0.15 –4.9 UN2121 40 mA 20 UN212X 20 µA V Collector to emitter saturation voltage 0 µA –1 Collector to base voltage Input resistance Unit –5 UN2122/212X/212Y Forward current transfer ratio max ICBO UN2121 Emitter cutoff current 2 typ 1.2 kΩ Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y Characteristics charts of UN2121 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –200 IB=–1.0mA –160 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –120 –0.4mA –80 –0.3mA –0.2mA –40 –0.1mA Collector to emitter saturation voltage VCE(sat) (V) –100 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Collector to emitter voltage VCE (V) –25˚C –3 –10 Ta=75˚C 200 100 25˚C 0 –1 –100 –300 –1000 –3 6 4 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 8 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –30 –10000 f=1MHz IE=0 Ta=25˚C 10 300 Collector current IC (mA) Cob — VCB 12 VCE= –10V –25˚C –0.01 –1 –12 hFE — IC 400 Forward current transfer ratio hFE –240 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 2 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 –1 –3 –10 –30 –100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN2122 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –250 IB=–1.0mA –200 –0.9mA –0.8mA –0.7mA –150 –0.6mA –0.5mA –100 –0.4mA –0.3mA –0.2mA –50 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –1 160 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Ta=75˚C VCE= –10V Forward current transfer ratio hFE –300 120 25˚C 80 –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 3 Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y Cob — VCB IO — VIN –10000 20 16 12 8 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 24 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 4 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN2123 IC — VCE VCE(sat) — IC Collector current IC (mA) –200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –160 –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –100 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 (V) –3 –30 –25˚C 100 50 0 –1 –100 –300 –1000 –3 16 12 8 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 150 IO — VIN f=1MHz IE=0 Ta=25˚C –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 4 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 4 –10 –10000 20 25˚C Collector current IC (mA) Cob — VCB 24 Ta=75˚C VCE= –10V –25˚C –0.01 –1 –12 hFE — IC 200 Forward current transfer ratio hFE –240 –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y Characteristics charts of UN2124 IC — VCE VCE(sat) — IC Collector current IC (mA) –250 IB=–1.0mA –200 –0.9mA –0.8mA –0.7mA –0.6mA –150 –0.5mA –0.4mA –100 –0.3mA –0.2mA –50 –0.1mA Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 0 0 –2 –4 –6 –8 –10 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –0.01 –1 –12 400 IC/IB=10 –30 Collector to emitter voltage VCE (V) –25˚C –3 –10 –30 VCE= –10V 350 300 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –100 –300 –1000 –3 IO — VIN –10000 16 12 8 –100 –300 –1000 VIN — IO VO=–5V Ta=25˚C –3000 –30 –1000 –10 Output current IO (µA) 20 –30 –100 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) Collector current IC (mA) Cob — VCB 24 Collector output capacitance Cob (pF) hFE — IC –100 Forward current transfer ratio hFE –300 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 4 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN212X IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –200 IB=–1.6mA –160 –1.4mA –1.2mA –120 –1.0mA –0.8mA –80 –0.6mA –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –1 240 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE –240 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 5 Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y Cob — VCB VIN — IO –100 f=1MHz IE=0 Ta=25˚C 20 16 12 8 VO=–0.2V Ta=25˚C –30 –10 Input voltage VIN (V) Collector output capacitance Cob (pF) 24 –3 –1 –0.3 –0.1 4 –0.03 0 –1 –3 –10 –30 –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) Collector to base voltage VCB (V) Characteristics charts of UN212Y IC — VCE VCE(sat) — IC IB=–1.2mA –160 –1.0mA –0.8mA –120 –0.6mA –80 –0.4mA –40 –0.2mA 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –1 0 –3 Cob — VCB –30 f=1MHz IE=0 Ta=25˚C 16 12 8 VO=–0.2V Ta=25˚C –10 –3 –1 –0.3 –0.1 4 –0.03 0 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –0.01 –0.1 –0.3 –1 –3 VCE= –10V –10 –30 Output current IO (mA) 200 160 Ta=75˚C 25˚C 120 –25˚C 80 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) –30 Input voltage VIN (V) 20 –100 –300 –1000 VIN — IO –100 24 Collector output capacitance Cob (pF) –10 Collector current IC (mA) Collector to emitter voltage VCE (V) 240 Forward current transfer ratio hFE Collector current IC (mA) –200 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 6 hFE — IC –100 –240 –100