PANASONIC UN911F

Transistors with built-in Resistor
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Silicon PNP epitaxial planer transistor
Unit: mm
For digital circuits
1.6±0.15
0.4
●
●
●
●
●
●
0.2 -0.05
1.0±0.1
0.5
1.6±0.1
0.5
+0.1
■ Absolute Maximum Ratings
0 to 0.1
+0.1
0.15 -0.05
0.45±0.1 0.3
0.27±0.02
●
+0.05
0.85–0.03
+0.05
●
0.70–0.03
●
0 to 0.1
●
1.60±0.05
0.80
0.80±0.05
0.425 0.425
0.50
●
Unit: mm
0.80
●
+0.03
●
0.12–0.01
●
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
+0.05
●
1.60–0.03
●
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
100kΩ
—
47kΩ
0.80
●
Marking Symbol (R1)
UN9111
6A
10kΩ
UN9112
6B
22kΩ
UN9113
6C
47kΩ
UN9114
6D
10kΩ
UN9115
6E
10kΩ
UN9116
6F
4.7kΩ
UN9117
6H
22kΩ
UN9118
6I
0.51kΩ
UN9119
6K
1kΩ
UN9110
6L
47kΩ
UN911D
6M
47kΩ
UN911E
6N
47kΩ
UN911F
6O
4.7kΩ
UN911H
6P
2.2kΩ
UN911L
6Q
4.7kΩ
UNR911AJ
6X
100kΩ
UNR911BJ
6Y
100kΩ
UNR911CJ
6Z
—
3
2
■ Resistance by Part Number
●
0.4
1
0.50
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
0.75±0.15
●
1.00±0.05
■
0.8±0.1
Features
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
125
mW
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
–55 to +125
˚C
Internal Connection
R1
C
B
R2
E
1
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter
cutoff
current
Conditions
min
typ
Unit
ICBO
VCB = –50V, IE = 0
– 0.1
µA
ICEO
VCE = –50V, IB = 0
– 0.5
µA
UN9111
– 0.5
UN9112/9114/911E/911D
– 0.2
UN9113/UNR911AJ
– 0.1
UN9115/9116/9117/9110/UNR911BJ
IEBO
VEB = –6V, IC = 0
– 0.01
UN911F/911H
–1.0
UN9119
–1.5
UN9118/911L/911CJ
mA
–2.0
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
UN9111
Forward
current
transfer
ratio
35
UN9112/911E
60
UN9113/9114/UNR911AJ/911CJ
80
UN9115*/9116*/9117*/9110*UNR911BJ
hFE
VCE = –10V, IC = –5mA
UN911F/911D/9119/911H
460
20
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = – 0.3mA
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1kΩ
Output voltage low level
– 0.25
–4.9
– 0.2
VCC = –5V, VB = –3.5V, RL = 1kΩ
– 0.2
VCC = –5V, VB = –10V, RL = 1kΩ
– 0.2
UN911E
VCC = –5V, VB = –6V, RL = 1kΩ
– 0.2
UNR911AJ
VCC = –5V, VB = –5.0V, RL = 1kΩ
– 0.2
UN911D
VOL
Transition frequency
fT
UNR911AJ
150
VCB = –10V, IE = 2mA, f = 200MHz
10
UN9112/9117
22
UN9113/9110/911D/911E
47
UN9116/911F/911L
4.7
R1
(–30%)
UN9119
0.51
1
UN911H
2.2
UNR911AJ/911BJ
100
* hFE rank classification (UN9115/9116/9117/9110)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
V
MHz
80
UN9111/9114/9115
UN9118
V
V
VCC = –5V, VB = –2.5V, RL = 1kΩ
UN9113/UNR911BJ
Input
resistance
160
30
UN9118/911L
2
max
(+30%)
kΩ
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
■ Electrical Characteristics (continued)
Parameter
Resistance
ratio
Symbol
(Ta=25˚C)
Conditions
min
typ
max
UN9111/9112/9113/911L
0.8
1.0
1.2
UN9114
0.17
0.21
0.25
UN9118/9119
0.08
0.1
0.12
UN911D
4.7
R1/R2
UN911E
2.14
UN911F
0.47
UN911H
0.17
UNR911AJ
Resistance between Emitter to Base
Unit
0.22
0.27
1.0
UNR911CJ
R2
–30%
47
30%
3
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
150
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN9111
IC — VCE
VCE(sat) — IC
IB=–1.0mA
Collector current IC (mA)
–140
Ta=25˚C
–0.9mA
–120
–0.8mA
–0.7mA
–100
–0.6mA
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
IC/IB=10
–30
–10
–3
–1
–0.3
–25˚C
–0.03
–0.01
–0.1 –0.3
–10
–10000
–30
–25˚C
80
40
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
25˚C
120
IO — VIN
f=1MHz
IE=0
Ta=25˚C
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
4
–1
Ta=75˚C
VCE= –10V
Collector current IC (mA)
Cob — VCB
5
Ta=75˚C
25˚C
–0.1
Collector to emitter voltage VCE (V)
6
hFE — IC
160
Forward current transfer ratio hFE
–160
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN9112
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–140
–120
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
–0.3
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–10
–30
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
4
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
–10
Collector current IC (mA)
IO — VIN
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
VCE= –10V
Collector current IC (mA)
Cob — VCB
5
Ta=75˚C
25˚C
–0.1
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Collector to emitter saturation voltage VCE(sat) (V)
–160
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
–1
–3
–10
–30
–100
Output current IO (mA)
Input voltage VIN (V)
VCB (V)
Characteristics charts of UN9113
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
Ta=25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–120
–0.5mA
–100
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
400
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
VCE= –10V
Forward current transfer ratio hFE
IB=–1.0mA
–140
Collector to emitter saturation voltage VCE(sat) (V)
–160
Ta=75˚C
300
25˚C
200
–25˚C
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
5
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Cob — VCB
IO — VIN
4
3
2
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
VIN — IO
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
6
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN9114
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–140
IB=–1.0mA
–120
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–0.2mA
–40
–0.1mA
–20
Collector to emitter saturation voltage VCE(sat) (V)
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–1
–3
–10
–10000
–30
25˚C
–25˚C
100
0
–1
–100
–3
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
VO=–5V
Ta=25˚C
–1000
–3000
–300
–1000
–100
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
4
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–30
–10
–3
–1
1
–0.3
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
6
Ta=75˚C
200
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
300
Collector current IC (mA)
Cob — VCB
6
VCE= –10V
–25˚C
–0.01
–0.1 –0.3
–12
hFE — IC
400
Forward current transfer ratio hFE
–160
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.1
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN9115
IC — VCE
VCE(sat) — IC
–100
IB=–1.0mA
Collector current IC (mA)
–140
–120
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–0.4mA
–80
–0.3mA
–60
–0.2mA
–40
–0.1mA
–20
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
Cob — VCB
–30
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–160
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN9116
IC — VCE
VCE(sat) — IC
IB=–1.0mA
Collector current IC (mA)
–140
Ta=25˚C
–0.9mA
–0.8mA
–120
–0.7mA
–0.6mA
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
400
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
–160
–100
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
7
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Cob — VCB
IO — VIN
–10000
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–0.4
–100
Collector to base voltage VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN9117
IC — VCE
VCE(sat) — IC
–100
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Collector current IC (mA)
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
Ta=75˚C
–1
–0.3
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Collector to emitter voltage VCE (V)
–10
200
Ta=75˚C
25˚C
100
–25˚C
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
–30
300
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
–10000
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
8
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–120
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN9118
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–160
–0.8mA
–0.7mA
–120
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
Cob — VCB
–30
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–100
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
160
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN9119
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–160
–120
–80
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
160
IC/IB=10
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
VCE= –10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
9
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Cob — VCB
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Collector output capacitance Cob (pF)
IO — VIN
–10000
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–0.4
–100
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
Collector to base voltage VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN9110
IC — VCE
VCE(sat) — IC
–100
–60
–0.2mA
–40
–0.1mA
–20
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–12
Collector to emitter voltage VCE (V)
–10
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
–30
300
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
–10000
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
10
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=–1.0mA
–0.9mA
–100
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
–120
–30
–100
VCB (V)
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN911D
IC — VCE
VCE(sat) — IC
–100
Ta=25˚C
Collector current IC (mA)
–50
–40
–0.3mA
–30
–0.2mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–20
–0.1mA
–10
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
0
–12
Collector to emitter voltage VCE (V)
–1
–30
25˚C
–25˚C
80
40
0
–1
–100
Ta=75˚C
120
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
IB=–1.0mA
–0.9mA
–0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
–60
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–1.5
–100
VCB (V)
–0.03
–2.0
–2.5
–3.0
–3.5
–4.0
–0.01
–0.1 –0.3
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN911E
IC — VCE
VCE(sat) — IC
–100
Ta=25˚C
Collector current IC (mA)
–50
–40
–0.3mA
–30
–0.6mA
–0.5mA
–0.4mA
–20
–0.2mA
–0.1mA
–10
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
400
IC/IB=10
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
VCE=–10V
Forward current transfer ratio hFE
IB=–1.0mA
–0.9mA
–0.8mA –0.7mA
Collector to emitter saturation voltage VCE(sat) (V)
–60
–100
300
200
Ta=75˚C
100
0
–1
25˚C
–25˚C
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
11
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Cob — VCB
f=1MHz
IE=0
Ta=25˚C
4
3
2
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Output current IO (µA)
5
VIN — IO
–100
Input voltage VIN (V)
Collector output capacitance Cob (pF)
IO — VIN
–10000
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–1.5
–100
–0.03
–2.0
–2.5
–3.0
–3.5
–4.0
–0.01
–0.1 –0.3
Input voltage VIN (V)
Collector to base voltage VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN911F
IC — VCE
VCE(sat) — IC
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Collector current IC (mA)
–200
–160
–120
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
Collector to emitter voltage VCE (V)
–10
–10000
–30
Ta=75˚C
25˚C
80
–25˚C
40
0
–1
–100
–3
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
4
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
12
–3
120
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
–240
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN911H
IC — VCE
VCE(sat) — IC
–120
–80
IB=–0.5mA
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
IC/IB=10
–10
–1
Ta=75˚C
25˚C
–0.1
–25˚C
–0.01
–1
–12
Collector to emitter voltage VCE (V)
–3
–30
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
–0.1 –0.3
–100 –300 –1000
–1
–3
–10
–30
–100
Collector current IC (mA)
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
4
3
2
VO=–0.2V
Ta=25˚C
–10
Input voltage VIN (V)
5
–10
VCE=–10V
Collector current IC (mA)
Cob — VCB
6
240
Forward current transfer ratio hFE
Collector current IC (mA)
–100
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
Collector output capacitance Cob (pF)
hFE — IC
–100
–1
–0.1
1
0
–1
–3
–10
–30
Collector to base voltage
–0.01
–0.1 –0.3
–100
–1
–3
–10
–30
–100
Output current IO (mA)
VCB (V)
Characteristics charts of UN911L
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
–160
IB=–1.0mA
–120
–0.8mA
–0.6mA
–80
–0.4mA
–40
–0.2mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
25˚C
–0.3
–25˚C
–0.1
–0.03
–0.01
–1
240
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
200
160
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
13
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Cob — VCB
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
VO= –0.2V
Ta=25˚C
–10
–1
–0.1
1
0
–1
–3
–10
Collector to base voltage
14
VIN — IO
–100
Input voltage VIN (V)
Collector output capacitance Cob (pF)
6
–30
–100
VCB (V)
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100