SQM200N04-1m1L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0011 RDS(on) () at VGS = 4.5 V 0.0013 ID (A) • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd 200 Configuration • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Single D TO-263-7L G Drain connected to Tab G SS DS SS S N-Channel MOSFET ORDERING INFORMATION Package TO-263-7L Lead (Pb)-free and Halogen-free SQM200N04-1m1L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 200 200 IS 200 IDM 600 IAS 100 EAS 500 PD UNIT 375 125 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 40 RthJC 0.4 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 40 V - - 1 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 40 V, TJ = 125 °C VGS = 0 V VDS = 40 V, TJ = 175 °C - - 500 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 200 - - VGS = 10 V ID = 30 A - 0.0008 0.0011 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0019 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0023 VGS = 4.5 V ID = 20 A - 0.0009 0.0013 - 219 - - 16 524 20 655 - 2060 2575 Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = 15 V, ID = 30 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 484 605 Total Gate Chargec Qg - 275 413 - 56.6 - - 45.4 - f = 1 MHz 4.2 8.5 12.8 - 13 20 VDD = 20 V, RL = 1 ID 20 A, VGEN = 10 V, Rg = 1 - 12 18 - 443 665 - 126 189 - - 600 A - 0.8 1.5 V Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 20 A td(on) tr td(off) tf pF nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 60 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 160 250 VGS = 10 V thru 6 V VGS = 5 V VGS = 4 V 120 ID - Drain Current (A) ID - Drain Current (A) 200 150 VGS = 3 V 100 80 TC = 125 °C 40 TC = 25 °C 50 TC = - 55 °C 0 0 0 2 4 6 8 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 10 450 TC = - 55 °C 360 gfs - Transconductance (S) ID - Drain Current (A) 1.6 1.2 0.8 TC = 25 °C 0.4 TC = 125 °C 270 TC = 125 °C 180 90 TC = - 55 °C 0.0 0 0 1 2 3 4 5 0 14 28 42 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 0.0025 25 000 0.0020 20 000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = 25 °C 0.0015 VGS = 4.5 V 0.0010 VGS = 10 V 0.0005 56 70 32 40 Ciss 15 000 10 000 5000 Coss Crss 0.0000 0 0 20 40 60 80 100 ID - Drain Current (A) On-Resistance vs. Drain Current S12-2164-Rev. A, 24-Sep-12 120 0 8 16 24 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62679 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.4 ID = 20 A VDS = 20 V ID = 30 A 2.1 8 VGS = 10 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 6 4 2 1.8 1.5 VGS = 4.5 V 1.2 0.9 0.6 - 50 - 25 0 0 60 120 180 240 300 0 Qg - Total Gate Charge (nC) 0.005 10 0.004 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 75 100 125 150 175 On-Resistance vs. Junction Temperature 100 TJ = 150 °C TJ = 25 °C 0.1 50 TJ - Junction Temperature (°C) Gate Charge 1 25 0.01 0.003 0.002 TJ = 150 °C 0.001 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) 50 VDS - Drain-to-Source Voltage (V) 0.5 0.1 VGS(th) Variance (V) 4 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage - 0.3 ID = 5 mA - 0.7 - 1.1 ID = 250 μA - 1.5 - 50 - 25 2 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S12-2164-Rev. A, 24-Sep-12 125 150 175 48 ID = 10 mA 46 44 42 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62679 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 IDM Limited 100 μs ID Limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 10 Limited by RDS(on)* 1 BVDSS Limited TC = 25 °C Single Pulse 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62679. S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix D2PAK / TO-263 and TO-262 Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQM100N04-2m7 SQM100N04-2M7-GE3 SQM100N04-2M7_GE3 SQM100N10-10 SQM100N10-10-GE3 SQM100N10-10_GE3 SQM110N05-06L SQM110N05-06L-GE3 SQM110N05-06L_GE3 SQM110P06-8m9L SQM110P06-8M9L-GE3 SQM110P06-8M9L_GE3 SQM120N02-1m3L SQM120N02-1M3L-GE3 SQM120N02-1M3L_GE3 SQM120N03-1m5L SQM120N03-1M5L-GE3 SQM120N03-1M5L_GE3 SQM120N04-1m7 SQM120N04-1M7-GE3 SQM120N04-1M7_GE3 SQM120N04-1m7L SQM120N04-1M7L-GE3 SQM120N04-1M7L_GE3 SQM120N04-1m9 SQM120N04-1M9-GE3 SQM120N04-1M9_GE3 SQM120N06-06 SQM120N06-06-GE3 SQM120N06-06_GE3 SQM120N06-3m5L SQM120N06-3M5L-GE3 SQM120N06-3M5L_GE3 SQM120N10-09 SQM120N10-09-GE3 SQM120N10-09_GE3 SQM120N10-3m8 SQM120N10-3M8-GE3 SQM120N10-3M8_GE3 SQM120P04-04L SQM120P04-04L-GE3 SQM120P04-04L_GE3 SQM120P06-07L SQM120P06-07L-GE3 SQM120P06-07L_GE3 SQM120P10-10m1L - SQM120P10_10m1LGE3 SQM200N04-1m1L SQM200N04-1M1L-GE3 SQM200N04-1M1L_GE3 SQM200N04-1m7L SQM200N04-1M7L-GE3 SQM200N04-1M7L_GE3 SQM200N04-1m8 SQM200N04-1M8-GE3 SQM200N04-1M8_GE3 SQM25N15-52 SQM25N15-52-GE3 SQM25N15-52_GE3 SQM35N30-97 SQM35N30-97-GE3 SQM35N30-97_GE3 SQM40N10-30 SQM40N10-30-GE3 SQM40N10-30_GE3 SQM40N15-38 SQM40N15-38-GE3 SQM40N15-38_GE3 SQM40P10-40L SQM40P10-40L-GE3 SQM40P10-40L_GE3 SQM47N10-24L SQM47N10-24L-GE3 SQM47N10-24L_GE3 SQM50020EL - SQM50020EL_GE3 SQM50N04-4m0L SQM50N04-4M0L-GE3 SQM50N04-4M0L_GE3 SQM50N04-4m1 SQM50N04-4M1-GE3 SQM50N04-4M1_GE3 SQM50P03-07 SQM50P03-07-GE3 SQM50P03-07_GE3 SQM50P04-09L SQM50P04-09L-GE3 SQM50P04-09L_GE3 SQM50P06-15L SQM50P06-15L-GE3 SQM50P06-15L_GE3 SQM50P08-25L SQM50P08-25L-GE3 SQM50P08-25L_GE3 SQM60030E - SQM60030E_GE3 SQM60N06-15 SQM60N06-15-GE3 SQM60N06-15_GE3 SQM60N20-35 SQM60N20-35-GE3 SQM60N20-35_GE3 SQM85N15-19 SQM85N15-19-GE3 SQM85N15-19_GE3 SQV120N10-3m8 SQV120N10-3m8-GE3 SQV120N10-3m8_GE3 SQV120N06-4m7L - SQV120N06-4m7L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 24-Mar-16 Document Number: 67164 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix D2PAK (TO-263-7L) Case Outline Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin to pin coplanarity max. 4 mils. 4. Lead thickness 25 mils. 5. For SUM part numbers lead thickness is 24 mils to 29 mils. 6. For reference only. 7. Use inches as the primary measurement. 8. This feature is only for SUM. INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* SUB 0.012 0.018 0.305 0.457 c* SUM 0.022 0.028 0.559 0.711 c1 0.018 0.025 0.457 0.635 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.072 0.078 1.829 1.981 0.050 BSC e 1.27 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 0.010 BSC L4 M - 0.002 0.254 BSC - 0.050 ECN: T13-0709-Rev. B, 30-Sep-13 DWG: 6006 Revision: 30-Sep-13 1 Document Number: 63782 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000