SQD50N04-5m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 40 RDS(on) () at VGS = 10 V 0.0056 RDS(on) () at VGS = 4.5 V 0.0070 ID (A) • Package with low thermal resistance • AEC-Q101 qualified • 100 % Rg and UIS tested 50 Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-252 D TO-252 TO Drain connected to tab G N-Channel MOSFET S S D G Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 50 45 IS 50 IDM 200 IAS 33 EAS 54 PD UNIT 71 23 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c RthJA 50 RthJC 2.1 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). S15-2665-Rev. A, 09-Nov-15 Document Number: 63413 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N04-5m6L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS 5 V 50 - - VGS = 10 V ID = 20 A - 0.0043 0.0056 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0094 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0115 VGS = 4.5 V ID = 15 A - 0.0057 0.0070 - 100 - - 2850 4000 VDS = 15 V, ID = 15 A V nA μA A S b Input Capacitance Ciss VGS = 0 V Output Capacitance Coss - 360 500 Reverse Transfer Capacitance Crss - 135 200 Total Gate Charge c Qg - 46 75 Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Qgs Fall Time c VDS = 20 V, ID = 50 A Qgd Rg f = 1 MHz td(on) tr Time c VGS = 10 V VDS = 25 V, f = 1 MHz td(off) VDD = 20 V, RL = 0.4 ID 50 A, VGEN = 10 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics pF - 10 - - 8 - nC 1.3 2.8 4.5 - 9 15 - 19 30 - 26 40 - 10 15 - - 200 A - 0.87 1.5 V ns b Pulsed Current a ISM Forward Voltage VSD IF = 30 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2665-Rev. A, 09-Nov-15 Document Number: 63413 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N04-5m6L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 250 100 10000 VGS = 10 V thru 6 V 80 150 VGS = 4 V 100 50 1000 60 1st line 2nd line VGS = 5 V 2nd line ID - Drain Current (A) 40 20 VGS = 3 V TC = -55 °C 0 0 0 4 8 12 16 20 10 0 2 Transfer Characteristics Axis Title TC = 125 °C 80 100 40 0 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 2nd line gfs - Transconductance (S) 1000 120 20 30 40 10000 0.008 0.004 VGS = 10 V 10 0 20 40 60 80 ID - Drain Current (A) 2nd line ID - Drain Current (A) 2nd line Transconductance On-Resistance vs. Drain Current Axis Title Axis Title 1st line 2nd line 1600 100 Crss Coss 0 10 16 24 32 40 10000 ID = 50 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 2400 2nd line VGS - Gate-to-Source Voltage (V) Ciss 800 4 100 2 0 10 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S15-2665-Rev. A, 09-Nov-15 100 10 10000 3200 100 0.002 50 4000 8 1000 VGS = 4.5 V 0.006 0.000 10 10 10 0.010 10000 TC = 25 °C 0 8 Output Characteristics TC = -55 °C 0 6 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 160 4 VDS - Drain-to-Source Voltage (V) 2nd line 200 2nd line C - Capacitance (pF) 100 TC = 25 °C TC = 125 °C 1st line 2nd line 2nd line ID - Drain Current (A) 200 50 Document Number: 63413 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N04-5m6L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 30 A TJ = 150 °C 10 VGS = 10 V 1000 1.7 VGS = 4.5 V 1.3 100 0.9 0.5 0 25 50 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 -25 1000 1 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.05 0.6 10000 0.04 10000 1000 0.03 0.02 100 TJ = 150 °C 0.01 0 2 4 10 6 8 ID = 5 mA -0.6 ID = 250 μA 100 -1.0 TJ = 25 °C 0 1000 -0.2 1st line 2nd line 2nd line VGS(th) Variance (V) 0.2 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 2nd line IS - Source Current (A) 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 -1.4 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA 52 1000 49 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 55 46 100 43 40 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S15-2665-Rev. A, 09-Nov-15 Document Number: 63413 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N04-5m6L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 μs 10 ID limited 1000 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on) (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) BVDSS limited 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Axis Title 1 Duty Cycle = 0.5 1000 Notes: 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 PDM 0.1 0.1 t1 0.05 t2 t1 t2 100 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2665-Rev. A, 09-Nov-15 Document Number: 63413 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N04-5m6L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63413. S15-2665-Rev. A, 09-Nov-15 Document Number: 63413 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix DPAK / TO-252 and Reverse DPAK Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages: DATASHEET PART NUMBER OLD ORDERING CODE a SQD07N25-350H SQD07N25-350H-GE3 SQD07N25-350H_GE3 SQD100N02-3m5L - SQD100N02-3m5L_GE3 SQD100N03-3m2L SQD100N03-3M2L-GE3 SQD100N03-3M2L_GE3 SQD100N03-3m4 SQD100N03-3M4-GE3 SQD100N03-3M4_GE3 NEW ORDERING CODE SQD100N04-3m6 SQD100N04-3M6-GE3 SQD100N04-3M6_GE3 SQD100N04-3m6L SQD100N04-3M6L-GE3 SQD100N04-3M6L_GE3 SQD10N30-330H SQD10N30-330H-GE3 SQD10N30-330H_GE3 SQD15N06-42L SQD15N06-42L-GE3 SQD15N06-42L_GE3 SQD19P06-60L SQD19P06-60L-GE3 SQD19P06-60L_GE3 SQD23N06-31L SQD23N06-31L-GE3 SQD23N06-31L_GE3 SQD25N06-22L SQD25N06-22L-GE3 SQD25N06-22L_GE3 SQD25N15-52 SQD25N15-52-GE3 SQD25N15-52_GE3 SQD30N05-20L SQD30N05-20L-GE3 SQD30N05-20L_GE3 SQD40N06-14L SQD40N06-14L-GE3 SQD40N06-14L_GE3 SQD40N10-25 SQD40N10-25-GE3 SQD40N10-25_GE3 SQD40P10-40L SQD40P10-40L-GE3 SQD40P10-40L_GE3 SQD45P03-12 SQD45P03-12-GE3 SQD45P03-12_GE3 SQD50N04-5m6 SQD50N04-5M6-GE3 SQD50N04-5M6_GE3 SQD50N04-5m6L - SQD50N04-5m6L_GE3 SQD50N05-11L SQD50N05-11L-GE3 SQD50N05-11L_GE3 SQD50N06-09L SQD50N06-09L-GE3 SQD50N06-09L_GE3 SQD50N10-8m9L SQD50N10-8M9L-GE3 SQD50N10-8M9L_GE3 SQD50P03-07 SQD50P03-07-GE3 SQD50P03-07_GE3 SQD50P04-13L SQD50P04-13L-GE3 SQD50P04-13L_GE3 SQD50P04-09L SQD50P04-09L-GE3 SQD50P04-09L_GE3 SQD50P06-15L SQD50P06-15L-GE3 SQD50P06-15L_GE3 SQD50P08-25L SQD50P08-25L-GE3 SQD50P08-25L_GE3 SQD50P08-28 SQD50P08-28-GE3 SQD50P08-28_GE3 SQD90P04-9m4L SQD90P04-9M4L-GE3 SQD90P04-9M4L_GE3 SQD97N06-6m3L SQD97N06-6M3L-GE3 SQD97N06-6M3L_GE3 SQR40N10-25 SQR40N10-25-GE3 SQR40N10-25_GE3 SQR50N04-3m8 SQR50N04-3M8-GE3 SQR50N04-3M8_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 66957 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000