SQD40N06-14L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.014 RDS(on) (Ω) at VGS = 4.5 V 0.017 ID (A) • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified d 40 Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-252 TO-252 TO D Drain connected to tab G S S D N-Channel MOSFET G Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 40 29 IS 40 IDM 160 IAS 32 EAS 51 PD UNIT 75 25 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 60 RthJC 2 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S15-1873-Rev. C, 10-Aug-15 Document Number: 67002 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 20 A - 0.011 0.014 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.024 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.029 VGS = 4.5 V ID = 20 A, TJ = 25 °C VDS = 15 V, ID = 20 A - 0.014 0.017 - 52 - V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 40 A f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 0.75 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics - 1685 2105 - 305 385 - 180 225 51 - 34 - 6 9 - 8.5 13 0.8 1.7 3.7 - 8 12 pF nC Ω - 13 20 - 22 33 - 9 14 - - 160 A - 0.85 1.2 V ns b Pulsed Current a ISM Forward Voltage VSD IF = 20 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1873-Rev. C, 10-Aug-15 Document Number: 67002 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 V GS = 10 V thru 5 V 80 80 ID - Drain Current (A) ID - Drain Current (A) V GS = 4 V 60 40 60 40 T C = 25 °C 20 20 V GS = 3 V T C = 125 °C T C = - 55 °C 0 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 0 15 1 Output Characteristics 3 4 5 Transfer Characteristics 0.05 80 T C = - 55 °C 64 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 2 VGS - Gate-to-Source Voltage (V) T C = 25 °C 48 32 T C = 125 °C 0.04 0.03 0.02 V GS = 4.5 V 0.01 16 V GS = 10 V 0 0 0 8 16 24 ID - Drain Current (A) 32 0 40 12 24 36 48 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 2500 VGS - Gate-to-Source Voltage (V) ID = 40 A 2000 C - Capacitance (pF) Ciss 1500 1000 Coss 500 8 V DS = 30 V 6 4 2 Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance S15-1873-Rev. C, 10-Aug-15 60 0 5 10 15 20 25 Qg - Total Gate Charge (nC) 30 35 Gate Charge Document Number: 67002 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 20 A 2.0 10 V GS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.3 1.7 1.4 1.1 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.8 0.5 -50 0.001 -25 0 25 50 75 100 125 150 175 0 0.2 TJ - Junction Temperature (°C) 1.2 Source Drain Diode Forward Voltage 0.10 0.5 0.08 0.1 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) On-Resistance vs. Junction Temperature 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.06 0.04 -0.3 ID = 5 mA -0.7 ID = 250 μA T J = 150 °C 0.02 -1.1 T J = 25 °C 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 -1.5 -50 -25 0 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 175 Threshold Voltage 75 VDS - Drain-to-Source Voltage (V) ID = 10 mA 72 69 66 63 60 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S15-1873-Rev. C, 10-Aug-15 Document Number: 67002 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited I D - Drain Current (A) 100 µs Limited by RDS(on)* 10 ID Limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1873-Rev. C, 10-Aug-15 Document Number: 67002 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67002. S15-1873-Rev. C, 10-Aug-15 Document Number: 67002 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com REVISION HISTORY REVISION C a DATE 04-Aug-15 Vishay Siliconix DESCRIPTION OF CHANGE • Revised Rg minimum limit Note a. As of April 2014 S15-1873-Rev. C, 10-Aug-15 Document Number: 67002 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix DPAK / TO-252 and Reverse DPAK Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages: DATASHEET PART NUMBER OLD ORDERING CODE a SQD07N25-350H SQD07N25-350H-GE3 SQD07N25-350H_GE3 SQD100N02-3m5L - SQD100N02-3m5L_GE3 SQD100N03-3m2L SQD100N03-3M2L-GE3 SQD100N03-3M2L_GE3 SQD100N03-3m4 SQD100N03-3M4-GE3 SQD100N03-3M4_GE3 NEW ORDERING CODE SQD100N04-3m6 SQD100N04-3M6-GE3 SQD100N04-3M6_GE3 SQD100N04-3m6L SQD100N04-3M6L-GE3 SQD100N04-3M6L_GE3 SQD10N30-330H SQD10N30-330H-GE3 SQD10N30-330H_GE3 SQD15N06-42L SQD15N06-42L-GE3 SQD15N06-42L_GE3 SQD19P06-60L SQD19P06-60L-GE3 SQD19P06-60L_GE3 SQD23N06-31L SQD23N06-31L-GE3 SQD23N06-31L_GE3 SQD25N06-22L SQD25N06-22L-GE3 SQD25N06-22L_GE3 SQD25N15-52 SQD25N15-52-GE3 SQD25N15-52_GE3 SQD30N05-20L SQD30N05-20L-GE3 SQD30N05-20L_GE3 SQD40N06-14L SQD40N06-14L-GE3 SQD40N06-14L_GE3 SQD40N10-25 SQD40N10-25-GE3 SQD40N10-25_GE3 SQD40P10-40L SQD40P10-40L-GE3 SQD40P10-40L_GE3 SQD45P03-12 SQD45P03-12-GE3 SQD45P03-12_GE3 SQD50N04-5m6 SQD50N04-5M6-GE3 SQD50N04-5M6_GE3 SQD50N04-5m6L - SQD50N04-5m6L_GE3 SQD50N05-11L SQD50N05-11L-GE3 SQD50N05-11L_GE3 SQD50N06-09L SQD50N06-09L-GE3 SQD50N06-09L_GE3 SQD50N10-8m9L SQD50N10-8M9L-GE3 SQD50N10-8M9L_GE3 SQD50P03-07 SQD50P03-07-GE3 SQD50P03-07_GE3 SQD50P04-13L SQD50P04-13L-GE3 SQD50P04-13L_GE3 SQD50P04-09L SQD50P04-09L-GE3 SQD50P04-09L_GE3 SQD50P06-15L SQD50P06-15L-GE3 SQD50P06-15L_GE3 SQD50P08-25L SQD50P08-25L-GE3 SQD50P08-25L_GE3 SQD50P08-28 SQD50P08-28-GE3 SQD50P08-28_GE3 SQD90P04-9m4L SQD90P04-9M4L-GE3 SQD90P04-9M4L_GE3 SQD97N06-6m3L SQD97N06-6M3L-GE3 SQD97N06-6M3L_GE3 SQR40N10-25 SQR40N10-25-GE3 SQR40N10-25_GE3 SQR50N04-3m8 SQR50N04-3M8-GE3 SQR50N04-3M8_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 66957 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000