SQM40N10-30 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 100 RDS(on) (Ω) at VGS = 10 V 0.030 RDS(on) (Ω) at VGS = 6 V 0.034 ID (A) • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg and UIS tested 40 Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-263 D TO-263 G S S D Top View G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 40 22 IS 60 IDM 155 IAS 40 EAS 80 PD UNIT 107 35 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 1.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S15-1873-Rev. D, 10-Aug-15 Document Number: 64716 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40N10-30 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 1 UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductancea Dynamic IDSS ID(on) RDS(on) gfs VGS = 0 V VDS = 100 V - - VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 50 - - VGS = 10 V ID = 15 A - 0.023 0.030 VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.054 VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.067 VGS = 6 V ID = 10 A - 0.025 0.034 - 52 - - 2676 3345 VDS = 15 V, ID = 15 A V nA μA A Ω S b Input Capacitance Ciss Output Capacitance Coss - 285 355 Reverse Transfer Capacitance Crss - 95 120 Total Gate Charge c Qg - 41 62 Gate-Source Charge c Qgs 11 - 11 - f = 1 MHz 0.7 1.3 2.6 td(on) - 12 18 tr VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω - 5 8 - 23 35 - 5 8 - - 155 A - 0.85 1.5 V Gate Resistance Rg Turn-On Delay Rise Time c Turn-Off Delay Time c Fall Time c td(off) VDS = 50 V, ID = 40 A pF - Qgd VGS = 10 V VDS = 25 V, f = 1 MHz - Gate-Drain Charge c Time c VGS = 0 V tf nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 30 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1873-Rev. D, 10-Aug-15 Document Number: 64716 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40N10-30 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 75 75 V GS = 10 V thru 6 V 60 ID - Drain Current (A) ID - Drain Current (A) 60 45 V GS = 5 V 30 45 30 T C = 25 °C 15 15 T C = 125 °C V GS = 4 V T C = - 55 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 125 0.10 100 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 10 T C = - 55 °C 75 T C = 25 °C 50 T C = 125 °C 25 0.08 0.06 0.04 V GS = 6 V 0.02 0 V GS = 10 V 0 0 12 24 36 48 60 0 15 30 45 60 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 5000 75 10 VGS - Gate-to-Source Voltage (V) ID = 40 A C - Capacitance (pF) 4000 3000 Ciss 2000 Coss 1000 8 V DS = 50 V 6 4 2 Crss 0 0 0 20 40 60 80 100 0 10 20 30 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S15-1873-Rev. D, 10-Aug-15 40 50 Document Number: 64716 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40N10-30 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 15 A 2.1 10 V GS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 1.7 1.3 0.9 T J = 25 °C 0.1 0.01 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 0.8 0.12 0.3 0.09 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) T J = 150 °C 1 0.06 T J = 150 °C 0.03 T J = 25 °C 2 4 6 8 ID = 5 mA - 0.7 ID = 250 μA - 1.2 - 1.7 - 50 0 0 - 0.2 10 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 125 150 175 130 VDS - Drain-to-Source Voltage (V) ID = 10 mA 124 118 112 106 100 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S15-1873-Rev. D, 10-Aug-15 Document Number: 64716 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40N10-30 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 I D - Drain Current (A) 100 µs Limited by RDS(on)* 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1873-Rev. D, 10-Aug-15 Document Number: 64716 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40N10-30 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64716. S15-1873-Rev. D, 10-Aug-15 Document Number: 64716 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40N10-30 www.vishay.com REVISION HISTORY REVISION D a DATE 04-Aug-15 Vishay Siliconix DESCRIPTION OF CHANGE • Revised Rg minimum limit Note a. As of April 2014 S15-1873-Rev. D, 10-Aug-15 Document Number: 64716 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix D2PAK / TO-263 and TO-262 Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQM100N04-2m7 SQM100N04-2M7-GE3 SQM100N04-2M7_GE3 SQM100N10-10 SQM100N10-10-GE3 SQM100N10-10_GE3 SQM110N05-06L SQM110N05-06L-GE3 SQM110N05-06L_GE3 SQM110P06-8m9L SQM110P06-8M9L-GE3 SQM110P06-8M9L_GE3 SQM120N02-1m3L SQM120N02-1M3L-GE3 SQM120N02-1M3L_GE3 SQM120N03-1m5L SQM120N03-1M5L-GE3 SQM120N03-1M5L_GE3 SQM120N04-1m7 SQM120N04-1M7-GE3 SQM120N04-1M7_GE3 SQM120N04-1m7L SQM120N04-1M7L-GE3 SQM120N04-1M7L_GE3 SQM120N04-1m9 SQM120N04-1M9-GE3 SQM120N04-1M9_GE3 SQM120N06-06 SQM120N06-06-GE3 SQM120N06-06_GE3 SQM120N06-3m5L SQM120N06-3M5L-GE3 SQM120N06-3M5L_GE3 SQM120N10-09 SQM120N10-09-GE3 SQM120N10-09_GE3 SQM120N10-3m8 SQM120N10-3M8-GE3 SQM120N10-3M8_GE3 SQM120P04-04L SQM120P04-04L-GE3 SQM120P04-04L_GE3 SQM120P06-07L SQM120P06-07L-GE3 SQM120P06-07L_GE3 SQM120P10-10m1L - SQM120P10_10m1LGE3 SQM200N04-1m1L SQM200N04-1M1L-GE3 SQM200N04-1M1L_GE3 SQM200N04-1m7L SQM200N04-1M7L-GE3 SQM200N04-1M7L_GE3 SQM200N04-1m8 SQM200N04-1M8-GE3 SQM200N04-1M8_GE3 SQM25N15-52 SQM25N15-52-GE3 SQM25N15-52_GE3 SQM35N30-97 SQM35N30-97-GE3 SQM35N30-97_GE3 SQM40N10-30 SQM40N10-30-GE3 SQM40N10-30_GE3 SQM40N15-38 SQM40N15-38-GE3 SQM40N15-38_GE3 SQM40P10-40L SQM40P10-40L-GE3 SQM40P10-40L_GE3 SQM47N10-24L SQM47N10-24L-GE3 SQM47N10-24L_GE3 SQM50020EL - SQM50020EL_GE3 SQM50N04-4m0L SQM50N04-4M0L-GE3 SQM50N04-4M0L_GE3 SQM50N04-4m1 SQM50N04-4M1-GE3 SQM50N04-4M1_GE3 SQM50P03-07 SQM50P03-07-GE3 SQM50P03-07_GE3 SQM50P04-09L SQM50P04-09L-GE3 SQM50P04-09L_GE3 SQM50P06-15L SQM50P06-15L-GE3 SQM50P06-15L_GE3 SQM50P08-25L SQM50P08-25L-GE3 SQM50P08-25L_GE3 SQM60030E - SQM60030E_GE3 SQM60N06-15 SQM60N06-15-GE3 SQM60N06-15_GE3 SQM60N20-35 SQM60N20-35-GE3 SQM60N20-35_GE3 SQM85N15-19 SQM85N15-19-GE3 SQM85N15-19_GE3 SQV120N10-3m8 SQV120N10-3m8-GE3 SQV120N10-3m8_GE3 SQV120N06-4m7L - SQV120N06-4m7L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 24-Mar-16 Document Number: 67164 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000