SQV120N06-4m7L Datasheet

SQV120N06-4m7L
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
60
RDS(on) (Ω) at VGS = 10 V
0.00470
RDS(on) (Ω) at VGS = 4.5 V
0.00600
ID (A)
• Package with low thermal resistance
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
120
Configuration
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Single
Package
TO-262
D
TO-262
G
S
S
D
Top View
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
TC = 25 °C a
Continuous Drain Current
Continuous Source Current (Diode
TC = 125 °C
Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
120
91
IS
120
IDM
300
IAS
80
EAS
320
PD
UNIT
250
83
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.6
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mount c
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
S15-2326-Rev. A, 05-Oct-15
Document Number: 66962
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQV120N06-4m7L
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward
Transconductance b
Dynamic
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
1
IDSS
ID(on)
RDS(on)
gfs
V
VGS = 0 V
VDS = 60 V
-
-
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
500
VGS = 10 V
VDS ≥ 5 V
120
-
-
VGS = 10 V
ID = 30 A
-
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.00801
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.00992
VGS = 4.5 V
ID = 20 A
-
VDS = 15 V, ID = 30 A
nA
μA
A
0.00378 0.00470
Ω
0.00481 0.00600
-
118
-
S
-
6705
8800
-
904
1200
-
555
800
-
148
230
-
21.4
-
-
33.2
-
f = 1 MHz
0.45
0.99
1.5
td(on)
-
16
25
tr
VDD = 30 V, RL = 0.353 Ω
ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω
-
9
15
-
46
75
-
12
20
-
-
300
A
-
0.92
1.5
V
b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate
Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay
Rise Time c
Turn-Off Delay Time c
Fall Time c
VDS = 25 V, f = 1 MHz
Qg
Gate-Source Charge c
Time c
VGS = 0 V
VGS = 10 V
td(off)
VDS = 30 V, ID = 85 A
tf
Source-Drain Diode Ratings and Characteristics
Pulsed Current a
ISM
Forward Voltage
VSD
pF
nC
Ω
ns
b
IF = 70 A, VGS = 0
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2326-Rev. A, 05-Oct-15
Document Number: 66962
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQV120N06-4m7L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
200
120
10000
10000
VGS = 10 V thru 4 V
80
100
40
1000
72
1st line
2nd line
1000
120
2nd line
ID - Drain Current (A)
96
VGS = 4 V
1st line
2nd line
2nd line
ID - Drain Current (A)
160
48
TC = 25 °C
100
24
TC = 125 °C
VGS = 3 V
0
0
2
4
6
8
TC = -55 °C
0
10
10
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
10
Axis Title
150
0.01
10000
10000
1000
90
TC = 125 °C
60
100
30
0
0
6.0
12.0
18.0
24.0
0.008
1000
0.006
VGS = 4.5 V
0.004
0.002
10
0
20
On-Resistance vs. Drain Current
Axis Title
4000
100
Coss
Crss
10
30
40
50
60
10000
ID = 85 A
VDS = 30 V
8
1000
6
1st line
2nd line
1000
6000
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
20
4
100
2
0
10
0
30
60
90
120
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S15-2326-Rev. A, 05-Oct-15
100
10
1st line
2nd line
2nd line
C - Capacitance (pF)
80
Transconductance
8000
10
60
ID - Drain Current (A)
2nd line
10000
0
40
ID - Drain Current (A)
2nd line
Axis Title
0
100
VGS = 10 V
0
10
30.0
10000
2000
1st line
2nd line
TC = 25 °C
2nd line
RDS(on) - On-Resistance (Ω)
120
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
150
Document Number: 66962
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQV120N06-4m7L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
VGS = 10 V
2nd line
IS - Source Current (A)
10
1000
1.7
VGS = 4.5 V
1.3
100
0.9
0.5
0
25
50
TJ = 150 °C
1000
1
TJ = 25 °C
0.1
100
0.01
0.001
10
-50 -25
10000
10
0
75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.030
0.5
10000
10000
0.1
1000
0.018
0.012
100
TJ = 150 °C
1000
-0.3
ID = 5 mA
-0.7
100
-1.1
0.006
1st line
2nd line
2nd line
VGS(th) Variance (V)
0.024
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1st line
2nd line
ID = 30 A
2.1
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.5
ID = 250 μA
TJ = 25 °C
0.000
0
2
4
6
8
10
-1.5
10
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
10000
ID = 10 mA
81
1000
77
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
85
73
100
69
65
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S15-2326-Rev. A, 05-Oct-15
Document Number: 66962
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQV120N06-4m7L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
100 μs
IDM limited
1 ms
ID limited
10
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
100
10 ms
100 ms, 1 s, 10 s, DC
1
Limited by RDS(on) (1)
100
BVDSS limited
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
0.1
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2326-Rev. A, 05-Oct-15
Document Number: 66962
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQV120N06-4m7L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 5
10- 4
10- 3
10- 2
Square Wave Pulse Duration (s)
10- 1
1
3
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66962.
S15-2326-Rev. A, 05-Oct-15
Document Number: 66962
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
D2PAK / TO-263 and TO-262
Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQM100N04-2m7
SQM100N04-2M7-GE3
SQM100N04-2M7_GE3
SQM100N10-10
SQM100N10-10-GE3
SQM100N10-10_GE3
SQM110N05-06L
SQM110N05-06L-GE3
SQM110N05-06L_GE3
SQM110P06-8m9L
SQM110P06-8M9L-GE3
SQM110P06-8M9L_GE3
SQM120N02-1m3L
SQM120N02-1M3L-GE3
SQM120N02-1M3L_GE3
SQM120N03-1m5L
SQM120N03-1M5L-GE3
SQM120N03-1M5L_GE3
SQM120N04-1m7
SQM120N04-1M7-GE3
SQM120N04-1M7_GE3
SQM120N04-1m7L
SQM120N04-1M7L-GE3
SQM120N04-1M7L_GE3
SQM120N04-1m9
SQM120N04-1M9-GE3
SQM120N04-1M9_GE3
SQM120N06-06
SQM120N06-06-GE3
SQM120N06-06_GE3
SQM120N06-3m5L
SQM120N06-3M5L-GE3
SQM120N06-3M5L_GE3
SQM120N10-09
SQM120N10-09-GE3
SQM120N10-09_GE3
SQM120N10-3m8
SQM120N10-3M8-GE3
SQM120N10-3M8_GE3
SQM120P04-04L
SQM120P04-04L-GE3
SQM120P04-04L_GE3
SQM120P06-07L
SQM120P06-07L-GE3
SQM120P06-07L_GE3
SQM120P10-10m1L
-
SQM120P10_10m1LGE3
SQM200N04-1m1L
SQM200N04-1M1L-GE3
SQM200N04-1M1L_GE3
SQM200N04-1m7L
SQM200N04-1M7L-GE3
SQM200N04-1M7L_GE3
SQM200N04-1m8
SQM200N04-1M8-GE3
SQM200N04-1M8_GE3
SQM25N15-52
SQM25N15-52-GE3
SQM25N15-52_GE3
SQM35N30-97
SQM35N30-97-GE3
SQM35N30-97_GE3
SQM40N10-30
SQM40N10-30-GE3
SQM40N10-30_GE3
SQM40N15-38
SQM40N15-38-GE3
SQM40N15-38_GE3
SQM40P10-40L
SQM40P10-40L-GE3
SQM40P10-40L_GE3
SQM47N10-24L
SQM47N10-24L-GE3
SQM47N10-24L_GE3
SQM50020EL
-
SQM50020EL_GE3
SQM50N04-4m0L
SQM50N04-4M0L-GE3
SQM50N04-4M0L_GE3
SQM50N04-4m1
SQM50N04-4M1-GE3
SQM50N04-4M1_GE3
SQM50P03-07
SQM50P03-07-GE3
SQM50P03-07_GE3
SQM50P04-09L
SQM50P04-09L-GE3
SQM50P04-09L_GE3
SQM50P06-15L
SQM50P06-15L-GE3
SQM50P06-15L_GE3
SQM50P08-25L
SQM50P08-25L-GE3
SQM50P08-25L_GE3
SQM60030E
-
SQM60030E_GE3
SQM60N06-15
SQM60N06-15-GE3
SQM60N06-15_GE3
SQM60N20-35
SQM60N20-35-GE3
SQM60N20-35_GE3
SQM85N15-19
SQM85N15-19-GE3
SQM85N15-19_GE3
SQV120N10-3m8
SQV120N10-3m8-GE3
SQV120N10-3m8_GE3
SQV120N06-4m7L
-
SQV120N06-4m7L_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 24-Mar-16
Document Number: 67164
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO−262:
3−LEAD
A
E
E1
D
D1
L2
F
2
E2
3
L1
1
L
b(1)
J1
e
b
e(1)
c
MILLIMETERS*
Dim
A
b
b(1)
c
D
D1
e
e(1)
E
E1
E2
F
J1
L
L1
L2
INCHES
Min
Max
Min
Max
4.32
4.70
0.170
0.185
0.64
1.00
0.025
0.039
1.14
1.40
0.045
0.055
0.36
0.50
0.014
0.020
8.64
9.65
0.340
0.380
5.59
6.10
0.220
0.240
2.41
2.67
0.095
0.105
4.95
5.33
0.195
0.210
10.03
10.41
0.395
0.410
7.87
8.64
0.310
0.340
9.02
9.53
0.355
0.375
1.14
1.40
0.045
0.055
2.41
2.79
0.095
0.110
13.08
14.22
0.515
0.560
-
3.81
-
0.150
1.02
1.40
0.040
0.055
ECN: T-02234—Rev. C, 14-Oct-02
DWG: 5855
*Use millimeters as the primary measurement
Document Number: 71769
15-Oct-02
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Revision: 02-Oct-12
1
Document Number: 91000