SQV120N06-4m7L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.00470 RDS(on) (Ω) at VGS = 4.5 V 0.00600 ID (A) • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg and UIS tested 120 Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-262 D TO-262 G S S D Top View G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C a Continuous Drain Current Continuous Source Current (Diode TC = 125 °C Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 120 91 IS 120 IDM 300 IAS 80 EAS 320 PD UNIT 250 83 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.6 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S15-2326-Rev. A, 05-Oct-15 Document Number: 66962 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV120N06-4m7L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 1 IDSS ID(on) RDS(on) gfs V VGS = 0 V VDS = 60 V - - VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 500 VGS = 10 V VDS ≥ 5 V 120 - - VGS = 10 V ID = 30 A - VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.00801 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.00992 VGS = 4.5 V ID = 20 A - VDS = 15 V, ID = 30 A nA μA A 0.00378 0.00470 Ω 0.00481 0.00600 - 118 - S - 6705 8800 - 904 1200 - 555 800 - 148 230 - 21.4 - - 33.2 - f = 1 MHz 0.45 0.99 1.5 td(on) - 16 25 tr VDD = 30 V, RL = 0.353 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω - 9 15 - 46 75 - 12 20 - - 300 A - 0.92 1.5 V b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Rise Time c Turn-Off Delay Time c Fall Time c VDS = 25 V, f = 1 MHz Qg Gate-Source Charge c Time c VGS = 0 V VGS = 10 V td(off) VDS = 30 V, ID = 85 A tf Source-Drain Diode Ratings and Characteristics Pulsed Current a ISM Forward Voltage VSD pF nC Ω ns b IF = 70 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2326-Rev. A, 05-Oct-15 Document Number: 66962 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV120N06-4m7L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 200 120 10000 10000 VGS = 10 V thru 4 V 80 100 40 1000 72 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 96 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 160 48 TC = 25 °C 100 24 TC = 125 °C VGS = 3 V 0 0 2 4 6 8 TC = -55 °C 0 10 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 150 0.01 10000 10000 1000 90 TC = 125 °C 60 100 30 0 0 6.0 12.0 18.0 24.0 0.008 1000 0.006 VGS = 4.5 V 0.004 0.002 10 0 20 On-Resistance vs. Drain Current Axis Title 4000 100 Coss Crss 10 30 40 50 60 10000 ID = 85 A VDS = 30 V 8 1000 6 1st line 2nd line 1000 6000 2nd line VGS - Gate-to-Source Voltage (V) Ciss 20 4 100 2 0 10 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S15-2326-Rev. A, 05-Oct-15 100 10 1st line 2nd line 2nd line C - Capacitance (pF) 80 Transconductance 8000 10 60 ID - Drain Current (A) 2nd line 10000 0 40 ID - Drain Current (A) 2nd line Axis Title 0 100 VGS = 10 V 0 10 30.0 10000 2000 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 120 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 150 Document Number: 66962 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV120N06-4m7L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 VGS = 10 V 2nd line IS - Source Current (A) 10 1000 1.7 VGS = 4.5 V 1.3 100 0.9 0.5 0 25 50 TJ = 150 °C 1000 1 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 -25 10000 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.030 0.5 10000 10000 0.1 1000 0.018 0.012 100 TJ = 150 °C 1000 -0.3 ID = 5 mA -0.7 100 -1.1 0.006 1st line 2nd line 2nd line VGS(th) Variance (V) 0.024 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line ID = 30 A 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 ID = 250 μA TJ = 25 °C 0.000 0 2 4 6 8 10 -1.5 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 10 mA 81 1000 77 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 85 73 100 69 65 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S15-2326-Rev. A, 05-Oct-15 Document Number: 66962 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV120N06-4m7L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 100 μs IDM limited 1 ms ID limited 10 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on) (1) 100 BVDSS limited 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2326-Rev. A, 05-Oct-15 Document Number: 66962 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV120N06-4m7L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 3 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66962. S15-2326-Rev. A, 05-Oct-15 Document Number: 66962 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix D2PAK / TO-263 and TO-262 Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQM100N04-2m7 SQM100N04-2M7-GE3 SQM100N04-2M7_GE3 SQM100N10-10 SQM100N10-10-GE3 SQM100N10-10_GE3 SQM110N05-06L SQM110N05-06L-GE3 SQM110N05-06L_GE3 SQM110P06-8m9L SQM110P06-8M9L-GE3 SQM110P06-8M9L_GE3 SQM120N02-1m3L SQM120N02-1M3L-GE3 SQM120N02-1M3L_GE3 SQM120N03-1m5L SQM120N03-1M5L-GE3 SQM120N03-1M5L_GE3 SQM120N04-1m7 SQM120N04-1M7-GE3 SQM120N04-1M7_GE3 SQM120N04-1m7L SQM120N04-1M7L-GE3 SQM120N04-1M7L_GE3 SQM120N04-1m9 SQM120N04-1M9-GE3 SQM120N04-1M9_GE3 SQM120N06-06 SQM120N06-06-GE3 SQM120N06-06_GE3 SQM120N06-3m5L SQM120N06-3M5L-GE3 SQM120N06-3M5L_GE3 SQM120N10-09 SQM120N10-09-GE3 SQM120N10-09_GE3 SQM120N10-3m8 SQM120N10-3M8-GE3 SQM120N10-3M8_GE3 SQM120P04-04L SQM120P04-04L-GE3 SQM120P04-04L_GE3 SQM120P06-07L SQM120P06-07L-GE3 SQM120P06-07L_GE3 SQM120P10-10m1L - SQM120P10_10m1LGE3 SQM200N04-1m1L SQM200N04-1M1L-GE3 SQM200N04-1M1L_GE3 SQM200N04-1m7L SQM200N04-1M7L-GE3 SQM200N04-1M7L_GE3 SQM200N04-1m8 SQM200N04-1M8-GE3 SQM200N04-1M8_GE3 SQM25N15-52 SQM25N15-52-GE3 SQM25N15-52_GE3 SQM35N30-97 SQM35N30-97-GE3 SQM35N30-97_GE3 SQM40N10-30 SQM40N10-30-GE3 SQM40N10-30_GE3 SQM40N15-38 SQM40N15-38-GE3 SQM40N15-38_GE3 SQM40P10-40L SQM40P10-40L-GE3 SQM40P10-40L_GE3 SQM47N10-24L SQM47N10-24L-GE3 SQM47N10-24L_GE3 SQM50020EL - SQM50020EL_GE3 SQM50N04-4m0L SQM50N04-4M0L-GE3 SQM50N04-4M0L_GE3 SQM50N04-4m1 SQM50N04-4M1-GE3 SQM50N04-4M1_GE3 SQM50P03-07 SQM50P03-07-GE3 SQM50P03-07_GE3 SQM50P04-09L SQM50P04-09L-GE3 SQM50P04-09L_GE3 SQM50P06-15L SQM50P06-15L-GE3 SQM50P06-15L_GE3 SQM50P08-25L SQM50P08-25L-GE3 SQM50P08-25L_GE3 SQM60030E - SQM60030E_GE3 SQM60N06-15 SQM60N06-15-GE3 SQM60N06-15_GE3 SQM60N20-35 SQM60N20-35-GE3 SQM60N20-35_GE3 SQM85N15-19 SQM85N15-19-GE3 SQM85N15-19_GE3 SQV120N10-3m8 SQV120N10-3m8-GE3 SQV120N10-3m8_GE3 SQV120N06-4m7L - SQV120N06-4m7L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 24-Mar-16 Document Number: 67164 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO−262: 3−LEAD A E E1 D D1 L2 F 2 E2 3 L1 1 L b(1) J1 e b e(1) c MILLIMETERS* Dim A b b(1) c D D1 e e(1) E E1 E2 F J1 L L1 L2 INCHES Min Max Min Max 4.32 4.70 0.170 0.185 0.64 1.00 0.025 0.039 1.14 1.40 0.045 0.055 0.36 0.50 0.014 0.020 8.64 9.65 0.340 0.380 5.59 6.10 0.220 0.240 2.41 2.67 0.095 0.105 4.95 5.33 0.195 0.210 10.03 10.41 0.395 0.410 7.87 8.64 0.310 0.340 9.02 9.53 0.355 0.375 1.14 1.40 0.045 0.055 2.41 2.79 0.095 0.110 13.08 14.22 0.515 0.560 - 3.81 - 0.150 1.02 1.40 0.040 0.055 ECN: T-02234—Rev. C, 14-Oct-02 DWG: 5855 *Use millimeters as the primary measurement Document Number: 71769 15-Oct-02 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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