SQJ952EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 60 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.024 ID (A) per leg 23 Configuration Dual • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8L Dual D1 D2 D1 D2 6. 15 m m 1 13 5. m 3 4 S2 G2 m Top View 2 G1 G1 1 S1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET Bottom View ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ952EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C Maximum Power Dissipation a TC = 125 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ID 13 IS 23 93 IAS 21 EAS 22 TJ, Tstg c, d V 23 IDM PD UNIT 25 8.3 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c SYMBOL LIMIT RthJA 85 RthJC 6 UNIT °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-1221-Rev. A, 21-May-15 Document Number: 62862 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ952EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 VGS = 10 V VDS 5 V 30 - - VGS = 10 V ID = 10.3 A - 0.012 0.020 VGS = 10 V ID = 10.3 A, TJ = 125 °C - - 0.030 VGS = 10 V ID =10.3 A, TJ = 175 °C - - 0.040 VGS = 4.5 V ID = 10.3 A - 0.016 0.024 - 68 - VDS = 15 V, ID = 10.3 A V nA μA A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = 10 V VDS = 30 V, f = 1 MHz VDS = 30 V, ID = 4.5 A f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 30 ID 1 A, VGEN = 10 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics - 1500 1800 - 130 156 - 55 66 - 24 30 - 5 - - 12 - 0.6 1.3 2.6 - 9 12 - 6 8 - 25 30 - 9 12 pF nC ns b Pulsed Current a ISM Forward Voltage VSD IF = 10.3 A, VGS = 0 V - - 93 A - 0.7 1.1 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1221-Rev. A, 21-May-15 Document Number: 62862 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ952EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 VGS = 3 V 24 16 TC = 25 °C 8 8 TC = 125 °C TC = -55 °C 0 0 0 2 4 6 8 0 10 1 2 4 5 Transfer Characteristics Output Characteristics 10 125 8 100 gfs - Transconductance (S) ID - Drain Current (A) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 6 4 TC = 25 °C TC = -55 °C TC = 25 °C 75 50 TC = 125 °C 25 2 TC = 125 °C TC = -55 °C 0 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 3 0.05 2000 0.04 1600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 9 12 15 Transconductance Transfer Characteristics 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 6 ID - Drain Current (A) Ciss 1200 800 400 Coss Crss 0 0 0 8 16 24 32 ID - Drain Current (A) On-Resistance vs. Drain Current S15-1221-Rev. A, 21-May-15 40 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 60 Capacitance Document Number: 62862 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ952EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.5 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 4.5 A VDs = 30 V 8 6 4 2 0 0 5 10 15 20 25 1.7 VGS = 4.5 V 1.3 0.9 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 175 0.15 RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 IS - Source Current (A) VGS = 10 V 0.5 - 50 30 100 1 TJ = 25 °C 0.1 0.01 0.001 0.0 ID = 10.3 A 2.1 0.12 0.09 0.06 TJ = 150 °C 0.03 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage 80 0.6 ID = 1 mA VDS - Drain-to-Source Voltage (V) VGS(th) - Variance (V) 0.3 0.0 ID = 5 mA - 0.3 ID = 250 μA - 0.6 - 0.9 - 1.2 - 50 - 25 76 72 68 64 60 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S15-1221-Rev. A, 21-May-15 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62862 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ952EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited ID - Drain Current (A) 100 100 μs Limited by RDS(on)* 10 1 ms ID Limited 1 10 ms 100 ms, 1 s, 10 s, DC BVDSS Limited 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1 . Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1221-Rev. A, 21-May-15 Document Number: 62862 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ952EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62862. S15-1221-Rev. A, 21-May-15 Document Number: 62862 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQJ200EP - SQJ200EP-T1_GE3 SQJ202EP - SQJ202EP-T1_GE3 SQJ401EP SQJ401EP-T1-GE3 SQJ401EP-T1_GE3 SQJ402EP SQJ402EP-T1-GE3 SQJ402EP-T1_GE3 SQJ403EEP SQJ403EEP-T1-GE3 SQJ403EEP-T1_GE3 SQJ403EP - SQJ403EP-T1_GE3 SQJ410EP SQJ410EP-T1-GE3 SQJ410EP-T1_GE3 SQJ412EP SQJ412EP-T1-GE3 SQJ412EP-T1_GE3 SQJ422EP SQJ422EP-T1-GE3 SQJ422EP-T1_GE3 SQJ431EP SQJ431EP-T1-GE3 SQJ431EP-T1_GE3 SQJ443EP SQJ443EP-T1-GE3 SQJ443EP-T1_GE3 SQJ446EP - SQJ446EP-T1_GE3 SQJ456EP SQJ456EP-T1-GE3 SQJ456EP-T1_GE3 SQJ459EP - SQJ459EP-T1_GE3 SQJ460AEP - SQJ460AEP-T1_GE3 SQJ461EP SQJ461EP-T1-GE3 SQJ461EP-T1_GE3 SQJ463EP SQJ463EP-T1-GE3 SQJ463EP-T1_GE3 SQJ465EP SQJ465EP-T1-GE3 SQJ465EP-T1_GE3 SQJ469EP SQJ469EP-T1-GE3 SQJ469EP-T1_GE3 SQJ486EP SQJ486EP-T1-GE3 SQJ486EP-T1_GE3 SQJ488EP SQJ488EP-T1-GE3 SQJ488EP-T1_GE3 SQJ500AEP SQJ500AEP-T1-GE3 SQJ500AEP-T1_GE3 SQJ840EP SQJ840EP-T1-GE3 SQJ840EP-T1_GE3 SQJ844AEP SQJ844AEP-T1-GE3 SQJ844AEP-T1_GE3 SQJ850EP SQJ850EP-T1-GE3 SQJ850EP-T1_GE3 SQJ858AEP SQJ858AEP-T1-GE3 SQJ858AEP-T1_GE3 SQJ886EP SQJ886EP-T1-GE3 SQJ886EP-T1_GE3 SQJ910AEP SQJ910AEP-T1-GE3 SQJ910AEP-T1_GE3 SQJ912AEP SQJ912AEP-T1-GE3 SQJ912AEP-T1_GE3 SQJ940EP SQJ940EP-T1-GE3 SQJ940EP-T1_GE3 SQJ942EP SQJ942EP-T1-GE3 SQJ942EP-T1_GE3 SQJ951EP SQJ951EP-T1-GE3 SQJ951EP-T1_GE3 SQJ952EP - SQJ952EP-T1_GE3 SQJ956EP SQJ956EP-T1-GE3 SQJ956EP-T1_GE3 SQJ960EP SQJ960EP-T1-GE3 SQJ960EP-T1_GE3 SQJ963EP SQJ963EP-T1-GE3 SQJ963EP-T1_GE3 SQJ968EP SQJ968EP-T1-GE3 SQJ968EP-T1_GE3 SQJ980AEP SQJ980AEP-T1-GE3 SQJ980AEP-T1_GE3 SQJ992EP SQJ992EP-T1-GE3 SQJ992EP-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 21-Oct-15 Document Number: 65804 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline for all Parts Document Number: 66934 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0° - 0.117 10° 0° - 10° ECN: C15-1203-Rev. A, 07-Sep-15 DWG: 6044 Note • Millimeters will gover Document Number: 66934 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000