SQM50N04-4m0L Datasheet

SQM50N04-4m0L
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
40
RDS(on) () at VGS = 10 V
0.0040
RDS(on) () at VGS = 4.5 V
0.0055
ID (A)
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
50
Configuration
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Single
D
TO-263
G
G
D S
Top View
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and Halogen-free
SQM50N04-4m0L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
50
50
IS
50
IDM
200
IAS
62
EAS
192
PD
UNIT
150
50
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
1
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-1847-Rev. B, 30-Jul-12
Document Number: 66800
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50N04-4m0L
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
-
-
50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
150
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
50
-
-
VGS = 10 V
ID = 20 A
-
0.0025
0.0040
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0067
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0082
VGS = 4.5 V
ID = 20 A
-
0.0030
0.0055
-
110
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VDS = 15 V, ID = 15 A
V
nA
μA
A

S
Dynamicb
-
4880
6100
-
560
700
Crss
-
250
315
Qg
-
85
130
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 20 V, ID = 50 A
-
14
-
-
14
-
f = 1 MHz
1
2.15
3.3
-
9
14
VDD = 20 V, RL = 0.4 
ID  50 A, VGEN = 10 V, Rg = 1 
-
11
17
-
39
59
-
11
17
-
-
200
A
-
0.9
1.5
V
td(on)
tr
td(off)
pF
tf
nC

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 50 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S12-1847-Rev. B, 30-Jul-12
Document Number: 66800
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50N04-4m0L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
100
V GS = 10 V thru 4 V
80
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
20
60
40
T C = 25 °C
20
T C = 125 °C
V GS = 3 V
0
0
3
6
9
12
0
15
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
0.010
RDS(on) - On-Resistance (Ω)
240
T C = - 55 °C
180
T C = 25 °C
T C = 125 °C
120
0.008
0.006
V GS = 4.5 V
0.004
0.002
60
V GS = 10 V
0.000
0
0
16
32
48
ID - Drain Current (A)
64
0
80
20
40
60
ID - Drain Current (A)
80
100
On-Resistance vs. Drain Current
Transconductance
7000
10
ID = 50 A
VGS - Gate-to-Source Voltage (V)
6000
Ciss
C - Capacitance (pF)
1
VDS - Drain-to-Source Voltage (V)
300
g fs - Transconductance (S)
T C = - 55 °C
0
5000
4000
3000
2000
Coss
1000
8
6
V DS = 20 V
4
2
Crss
0
0
0
10
20
30
40
0
10
20
30
40
50
60
70
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S12-1847-Rev. B, 30-Jul-12
80
90
Document Number: 66800
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50N04-4m0L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
52
2.3
ID = 10 mA
2.0
V GS = 10 V
1.7
V GS = 4.5 V
1.4
1.1
0.8
0.5
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
50
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Normalized)
ID = 20 A
48
46
44
42
40
- 50
175
0.030
10
0.024
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
25
50
75
100
125
150
175
Drain Source Breakdown vs. Junction Temperature
100
T J = 150 °C
T J = 25 °C
0.1
0
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1
- 25
0.01
0.018
0.012
T J = 150 °C
0.006
T J = 25 °C
0
0.001
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Source Drain Diode Forward Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
0.7
VGS(th) Variance (V)
0.2
ID = 5 mA
- 0.3
- 0.8
ID = 250 μA
- 1.3
- 1.8
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
Threshold Voltage
S12-1847-Rev. B, 30-Jul-12
Document Number: 66800
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50N04-4m0L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
100
100 μs
ID - Drain Current (A)
Limited
by RDS(on)*
ID Limited
1 ms
10 ms
100 ms
1 s, 10 s, DC
10
1
0.1
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-1847-Rev. B, 30-Jul-12
Document Number: 66800
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50N04-4m0L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66800.
S12-1847-Rev. B, 30-Jul-12
Document Number: 66800
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
D2PAK / TO-263 and TO-262
Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQM100N04-2m7
SQM100N04-2M7-GE3
SQM100N04-2M7_GE3
SQM100N10-10
SQM100N10-10-GE3
SQM100N10-10_GE3
SQM110N05-06L
SQM110N05-06L-GE3
SQM110N05-06L_GE3
SQM110P06-8m9L
SQM110P06-8M9L-GE3
SQM110P06-8M9L_GE3
SQM120N02-1m3L
SQM120N02-1M3L-GE3
SQM120N02-1M3L_GE3
SQM120N03-1m5L
SQM120N03-1M5L-GE3
SQM120N03-1M5L_GE3
SQM120N04-1m7
SQM120N04-1M7-GE3
SQM120N04-1M7_GE3
SQM120N04-1m7L
SQM120N04-1M7L-GE3
SQM120N04-1M7L_GE3
SQM120N04-1m9
SQM120N04-1M9-GE3
SQM120N04-1M9_GE3
SQM120N06-06
SQM120N06-06-GE3
SQM120N06-06_GE3
SQM120N06-3m5L
SQM120N06-3M5L-GE3
SQM120N06-3M5L_GE3
SQM120N10-09
SQM120N10-09-GE3
SQM120N10-09_GE3
SQM120N10-3m8
SQM120N10-3M8-GE3
SQM120N10-3M8_GE3
SQM120P04-04L
SQM120P04-04L-GE3
SQM120P04-04L_GE3
SQM120P06-07L
SQM120P06-07L-GE3
SQM120P06-07L_GE3
SQM120P10-10m1L
-
SQM120P10_10m1LGE3
SQM200N04-1m1L
SQM200N04-1M1L-GE3
SQM200N04-1M1L_GE3
SQM200N04-1m7L
SQM200N04-1M7L-GE3
SQM200N04-1M7L_GE3
SQM200N04-1m8
SQM200N04-1M8-GE3
SQM200N04-1M8_GE3
SQM25N15-52
SQM25N15-52-GE3
SQM25N15-52_GE3
SQM35N30-97
SQM35N30-97-GE3
SQM35N30-97_GE3
SQM40N10-30
SQM40N10-30-GE3
SQM40N10-30_GE3
SQM40N15-38
SQM40N15-38-GE3
SQM40N15-38_GE3
SQM40P10-40L
SQM40P10-40L-GE3
SQM40P10-40L_GE3
SQM47N10-24L
SQM47N10-24L-GE3
SQM47N10-24L_GE3
SQM50020EL
-
SQM50020EL_GE3
SQM50N04-4m0L
SQM50N04-4M0L-GE3
SQM50N04-4M0L_GE3
SQM50N04-4m1
SQM50N04-4M1-GE3
SQM50N04-4M1_GE3
SQM50P03-07
SQM50P03-07-GE3
SQM50P03-07_GE3
SQM50P04-09L
SQM50P04-09L-GE3
SQM50P04-09L_GE3
SQM50P06-15L
SQM50P06-15L-GE3
SQM50P06-15L_GE3
SQM50P08-25L
SQM50P08-25L-GE3
SQM50P08-25L_GE3
SQM60030E
-
SQM60030E_GE3
SQM60N06-15
SQM60N06-15-GE3
SQM60N06-15_GE3
SQM60N20-35
SQM60N20-35-GE3
SQM60N20-35_GE3
SQM85N15-19
SQM85N15-19-GE3
SQM85N15-19_GE3
SQV120N10-3m8
SQV120N10-3m8-GE3
SQV120N10-3m8_GE3
SQV120N06-4m7L
-
SQV120N06-4m7L_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 24-Mar-16
Document Number: 67164
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Revision: 02-Oct-12
1
Document Number: 91000