SQM40P10-40L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () at VGS = - 10 V 0.040 RDS(on) () at VGS = - 4.5 V 0.048 ID (A) • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd - 40 Configuration • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Single S TO-263 G G D S D Top View P-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM40P10-40L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V - 40 - 23 IS - 60 IDM - 160 IAS - 45 EAS 100 PD UNIT 150 50 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 1 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S12-1847-Rev. B, 30-Jul-12 Document Number: 67053 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40P10-40L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = - 250 μA - 100 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 20 V - - ± 100 - - -1 UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = 0 V VDS = - 100 V VGS = 0 V VDS = - 100 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 100 V, TJ = 175 °C - - - 250 VGS = - 10 V VDS- 5 V - 30 - - VGS = - 10 V ID = - 17 A - 0.033 0.040 VGS = - 10 V ID = - 17 A, TJ = 125 °C - - 0.060 VGS = - 10 V ID = - 17 A, TJ = 175 °C - - 0.099 VGS = - 4.5 V ID = - 14 A VDS = - 15 V, ID = - 17 A - 0.0367 0.0480 - 47 - - 4236 5295 V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss - 314 395 Reverse Transfer Capacitance Crss - 216 270 Total Gate Chargec Qg - 89 134 - 11.6 - - 19.6 - 1.4 2.89 4.5 - 10 15 - 10 15 - 63 95 - 20 30 - - - 160 A - - 0.9 - 1.5 V Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec Source-Drain Diode Ratings and VGS = - 10 V VDS = - 25 V, f = 1 MHz VDS = - 50 V, ID = - 40 A Qgd Rg f = 1 MHz td(on) tr Timec VGS = 0 V td(off) VDD = - 50 V, RL = 1.25 ID - 40 A, VGEN = - 10 V, Rg = 1 tf pF nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 30 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1847-Rev. B, 30-Jul-12 Document Number: 67053 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40P10-40L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 VGS = 3 V 24 TC = 25 °C 16 8 8 0 0 TC = 125 °C 0 2 4 6 8 0 10 1 4 5 Transfer Characteristics 10 100 8 80 gfs - Transconductance (S) ID - Drain Current (A) Output Characteristics 6 TC = 25 °C 2 TC = 125 °C 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 4 2 TC = - 55 °C TC = - 55 °C TC = 25 °C 60 TC = 125 °C 40 20 TC = - 55 °C 0 0 0 1 2 3 4 0 5 8 16 24 32 40 80 100 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Transfer Characteristics Transconductance 7000 0.10 6000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 5000 Ciss 4000 3000 2000 0.02 Coss 1000 Crss 0 0.00 0 8 16 24 32 ID - Drain Current (A) On-Resistance vs. Drain Current S12-1847-Rev. B, 30-Jul-12 40 0 20 40 60 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 67053 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40P10-40L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 40 A VDS = 50 V 8 6 4 2 0 0 20 40 60 80 ID = 10 A 2.1 VGS = 10 V 1.7 VGS = 4.5 V 1.3 0.9 0.5 - 50 - 25 100 0 100 0.25 10 0.20 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Gate Charge TJ = 150 °C 1 0.1 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) TJ = 25 °C 0.01 0.15 0.10 TJ = 150 °C 0.05 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 8 10 VGS - Gate-to-Source Voltage (V) 1.1 - 105 I D = 250 μA 0.5 ID = 5 mA 0.2 - 0.1 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S12-1847-Rev. B, 30-Jul-12 125 150 175 VDS - Drain-to-Source Voltage (V) - 110 0.8 VGS(th) Variance (V) 6 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage - 0.4 - 50 - 25 4 ID = 10 mA - 115 - 120 - 125 - 130 - 135 - 140 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 67053 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40P10-40L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 100 μs 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on)* BVDSS Limited 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S12-1847-Rev. B, 30-Jul-12 Document Number: 67053 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40P10-40L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67053. S12-1847-Rev. B, 30-Jul-12 Document Number: 67053 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix D2PAK / TO-263 and TO-262 Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQM100N04-2m7 SQM100N04-2M7-GE3 SQM100N04-2M7_GE3 SQM100N10-10 SQM100N10-10-GE3 SQM100N10-10_GE3 SQM110N05-06L SQM110N05-06L-GE3 SQM110N05-06L_GE3 SQM110P06-8m9L SQM110P06-8M9L-GE3 SQM110P06-8M9L_GE3 SQM120N02-1m3L SQM120N02-1M3L-GE3 SQM120N02-1M3L_GE3 SQM120N03-1m5L SQM120N03-1M5L-GE3 SQM120N03-1M5L_GE3 SQM120N04-1m7 SQM120N04-1M7-GE3 SQM120N04-1M7_GE3 SQM120N04-1m7L SQM120N04-1M7L-GE3 SQM120N04-1M7L_GE3 SQM120N04-1m9 SQM120N04-1M9-GE3 SQM120N04-1M9_GE3 SQM120N06-06 SQM120N06-06-GE3 SQM120N06-06_GE3 SQM120N06-3m5L SQM120N06-3M5L-GE3 SQM120N06-3M5L_GE3 SQM120N10-09 SQM120N10-09-GE3 SQM120N10-09_GE3 SQM120N10-3m8 SQM120N10-3M8-GE3 SQM120N10-3M8_GE3 SQM120P04-04L SQM120P04-04L-GE3 SQM120P04-04L_GE3 SQM120P06-07L SQM120P06-07L-GE3 SQM120P06-07L_GE3 SQM120P10-10m1L - SQM120P10_10m1LGE3 SQM200N04-1m1L SQM200N04-1M1L-GE3 SQM200N04-1M1L_GE3 SQM200N04-1m7L SQM200N04-1M7L-GE3 SQM200N04-1M7L_GE3 SQM200N04-1m8 SQM200N04-1M8-GE3 SQM200N04-1M8_GE3 SQM25N15-52 SQM25N15-52-GE3 SQM25N15-52_GE3 SQM35N30-97 SQM35N30-97-GE3 SQM35N30-97_GE3 SQM40N10-30 SQM40N10-30-GE3 SQM40N10-30_GE3 SQM40N15-38 SQM40N15-38-GE3 SQM40N15-38_GE3 SQM40P10-40L SQM40P10-40L-GE3 SQM40P10-40L_GE3 SQM47N10-24L SQM47N10-24L-GE3 SQM47N10-24L_GE3 SQM50020EL - SQM50020EL_GE3 SQM50N04-4m0L SQM50N04-4M0L-GE3 SQM50N04-4M0L_GE3 SQM50N04-4m1 SQM50N04-4M1-GE3 SQM50N04-4M1_GE3 SQM50P03-07 SQM50P03-07-GE3 SQM50P03-07_GE3 SQM50P04-09L SQM50P04-09L-GE3 SQM50P04-09L_GE3 SQM50P06-15L SQM50P06-15L-GE3 SQM50P06-15L_GE3 SQM50P08-25L SQM50P08-25L-GE3 SQM50P08-25L_GE3 SQM60030E - SQM60030E_GE3 SQM60N06-15 SQM60N06-15-GE3 SQM60N06-15_GE3 SQM60N20-35 SQM60N20-35-GE3 SQM60N20-35_GE3 SQM85N15-19 SQM85N15-19-GE3 SQM85N15-19_GE3 SQV120N10-3m8 SQV120N10-3m8-GE3 SQV120N10-3m8_GE3 SQV120N06-4m7L - SQV120N06-4m7L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 24-Mar-16 Document Number: 67164 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000