SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0015 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET® Power MOSFET • Package with Low Thermal Resistance 120 Configuration • 100 % Rg and UIS Tested Single • AEC-Q101 Qualifiedd D • Compliant to RoHS Directive 2002/95/EC TO-263 G G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM120N03-1m5L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 120 120 IS 120 IDM 480 IAS 82 EAS 336 PD UNIT 375 125 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 40 RthJC 0.4 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. Document Number: 67333 S11-1098-Rev. A, 13-Jun-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120N03-1m5L Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 30 V - - 1 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 250 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 120 - - VGS = 10 V ID = 30 A - 0.0014 0.0015 Gate-Source Threshold Voltage Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0023 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0028 VGS = 4.5 V ID = 20 A VDS = 15 V, ID = 30 A - 0.0016 0.0020 - 190 - - 12 484 15 605 - 2204 2755 V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss VGS = 0 V VDS = 15 V, f = 1 MHz Reverse Transfer Capacitance Crss - 860 1075 Total Gate Chargec Qg - 179 270 Gate-Source Chargec Qgs - 34 - Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 10 V VDS = 10 V, ID = 120 A Qgd pF nC - 21 - 0.59 1.19 1.79 td(on) - 18 27 tr - 11 17 - 64 96 - 11 17 - - 480 A - 0.81 1.5 V Rg td(off) f = 1 MHz VDD = 15 V, RL = 0.3 ID 50 A, VGEN = 10 V, Rg = 1 tf ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 60 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67333 S11-1098-Rev. A, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120N03-1m5L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 150 200 VGS = 10 V thru 4 V 120 ID - Drain Current (A) ID - Drain Current (A) 160 120 80 90 TC = 25 °C 60 30 40 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 3 6 9 12 0 15 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 350 1.5 TC = - 55 °C 280 gfs - Transconductance (S) ID - Drain Current (A) 1.2 0.9 0.6 TC = 25 °C TC = 25 °C 210 TC = 125 °C 140 70 0.3 TC = 125 °C TC = - 55 °C 0 0.0 0 1 2 3 4 0 5 14 28 42 56 70 6 12 18 24 VDS - Drain-to-Source Voltage (V) 30 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 0.005 15 000 0.004 12 000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 0.003 0.002 VGS = 4.5 V VGS = 10 V 0.001 9000 6000 Coss 3000 Crss 0.000 0 0 20 40 60 80 100 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 67333 S11-1098-Rev. A, 13-Jun-11 120 0 Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120N03-1m5L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 2.0 ID = 120 A 8 1.7 6 4 2 0 40 80 120 160 VGS = 4.5 V 1.1 0.5 - 50 - 25 200 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 0.005 10 0.004 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 175 0.003 TJ = 150 °C 0.002 TJ = 25 °C 0.001 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 6 8 10 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage 0.5 VDS - Drain-to-Source Voltage (V) 40 0.1 - 0.3 ID = 5 mA - 0.7 ID = 250 μA - 1.1 - 1.5 - 50 - 25 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 25 Gate Charge 100 0.001 0.0 0 Qg - Total Gate Charge (nC) RDS(on) - On-Resistance (Ω) IS - Source Current (A) 1.4 0.8 0 VGS(th) Variance (V) VGS = 10 V ID = 30 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) VDS = 15 V 125 150 175 38 ID = 1 mA 36 34 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 67333 S11-1098-Rev. A, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120N03-1m5L Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 100 μs IDM Limited 1 0.1 0.01 0.01 1 ms 10 ms 100 ms, 1 s, 10 s, DC ID Limited 10 Limited by RDS(on)* TC = 25 °C Single Pulse BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 67333 S11-1098-Rev. A, 13-Jun-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120N03-1m5L Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67333. www.vishay.com 6 Document Number: 67333 S11-1098-Rev. A, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix D2PAK / TO-263 and TO-262 Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQM100N04-2m7 SQM100N04-2M7-GE3 SQM100N04-2M7_GE3 SQM100N10-10 SQM100N10-10-GE3 SQM100N10-10_GE3 SQM110N05-06L SQM110N05-06L-GE3 SQM110N05-06L_GE3 SQM110P06-8m9L SQM110P06-8M9L-GE3 SQM110P06-8M9L_GE3 SQM120N02-1m3L SQM120N02-1M3L-GE3 SQM120N02-1M3L_GE3 SQM120N03-1m5L SQM120N03-1M5L-GE3 SQM120N03-1M5L_GE3 SQM120N04-1m7 SQM120N04-1M7-GE3 SQM120N04-1M7_GE3 SQM120N04-1m7L SQM120N04-1M7L-GE3 SQM120N04-1M7L_GE3 SQM120N04-1m9 SQM120N04-1M9-GE3 SQM120N04-1M9_GE3 SQM120N06-06 SQM120N06-06-GE3 SQM120N06-06_GE3 SQM120N06-3m5L SQM120N06-3M5L-GE3 SQM120N06-3M5L_GE3 SQM120N10-09 SQM120N10-09-GE3 SQM120N10-09_GE3 SQM120N10-3m8 SQM120N10-3M8-GE3 SQM120N10-3M8_GE3 SQM120P04-04L SQM120P04-04L-GE3 SQM120P04-04L_GE3 SQM120P06-07L SQM120P06-07L-GE3 SQM120P06-07L_GE3 SQM120P10-10m1L - SQM120P10_10m1LGE3 SQM200N04-1m1L SQM200N04-1M1L-GE3 SQM200N04-1M1L_GE3 SQM200N04-1m7L SQM200N04-1M7L-GE3 SQM200N04-1M7L_GE3 SQM200N04-1m8 SQM200N04-1M8-GE3 SQM200N04-1M8_GE3 SQM25N15-52 SQM25N15-52-GE3 SQM25N15-52_GE3 SQM35N30-97 SQM35N30-97-GE3 SQM35N30-97_GE3 SQM40N10-30 SQM40N10-30-GE3 SQM40N10-30_GE3 SQM40N15-38 SQM40N15-38-GE3 SQM40N15-38_GE3 SQM40P10-40L SQM40P10-40L-GE3 SQM40P10-40L_GE3 SQM47N10-24L SQM47N10-24L-GE3 SQM47N10-24L_GE3 SQM50020EL - SQM50020EL_GE3 SQM50N04-4m0L SQM50N04-4M0L-GE3 SQM50N04-4M0L_GE3 SQM50N04-4m1 SQM50N04-4M1-GE3 SQM50N04-4M1_GE3 SQM50P03-07 SQM50P03-07-GE3 SQM50P03-07_GE3 SQM50P04-09L SQM50P04-09L-GE3 SQM50P04-09L_GE3 SQM50P06-15L SQM50P06-15L-GE3 SQM50P06-15L_GE3 SQM50P08-25L SQM50P08-25L-GE3 SQM50P08-25L_GE3 SQM60030E - SQM60030E_GE3 SQM60N06-15 SQM60N06-15-GE3 SQM60N06-15_GE3 SQM60N20-35 SQM60N20-35-GE3 SQM60N20-35_GE3 SQM85N15-19 SQM85N15-19-GE3 SQM85N15-19_GE3 SQV120N10-3m8 SQV120N10-3m8-GE3 SQV120N10-3m8_GE3 SQV120N06-4m7L - SQV120N06-4m7L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 24-Mar-16 Document Number: 67164 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000