SQM120N03-1m5L Datasheet

SQM120N03-1m5L
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
30
RDS(on) () at VGS = 10 V
0.0015
RDS(on) () at VGS = 4.5 V
0.0020
ID (A)
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
120
Configuration
• 100 % Rg and UIS Tested
Single
• AEC-Q101 Qualifiedd
D
• Compliant to RoHS Directive 2002/95/EC
TO-263
G
G
D S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and Halogen-free
SQM120N03-1m5L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
120
120
IS
120
IDM
480
IAS
82
EAS
336
PD
UNIT
375
125
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
40
RthJC
0.4
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
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SQM120N03-1m5L
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
250
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
120
-
-
VGS = 10 V
ID = 30 A
-
0.0014
0.0015
Gate-Source Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.0023
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.0028
VGS = 4.5 V
ID = 20 A
VDS = 15 V, ID = 30 A
-
0.0016
0.0020
-
190
-
-
12 484
15 605
-
2204
2755
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 15 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
-
860
1075
Total Gate Chargec
Qg
-
179
270
Gate-Source Chargec
Qgs
-
34
-
Gate-Drain
Chargec
Gate Resistance
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 10 V
VDS = 10 V, ID = 120 A
Qgd
pF
nC
-
21
-
0.59
1.19
1.79
td(on)
-
18
27
tr
-
11
17
-
64
96
-
11
17
-
-
480
A
-
0.81
1.5
V
Rg
td(off)
f = 1 MHz
VDD = 15 V, RL = 0.3 
ID  50 A, VGEN = 10 V, Rg = 1 
tf

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 60 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
200
VGS = 10 V thru 4 V
120
ID - Drain Current (A)
ID - Drain Current (A)
160
120
80
90
TC = 25 °C
60
30
40
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
3
6
9
12
0
15
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
350
1.5
TC = - 55 °C
280
gfs - Transconductance (S)
ID - Drain Current (A)
1.2
0.9
0.6
TC = 25 °C
TC = 25 °C
210
TC = 125 °C
140
70
0.3
TC = 125 °C
TC = - 55 °C
0
0.0
0
1
2
3
4
0
5
14
28
42
56
70
6
12
18
24
VDS - Drain-to-Source Voltage (V)
30
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.005
15 000
0.004
12 000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
0.003
0.002
VGS = 4.5 V
VGS = 10 V
0.001
9000
6000
Coss
3000
Crss
0.000
0
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
120
0
Capacitance
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
2.0
ID = 120 A
8
1.7
6
4
2
0
40
80
120
160
VGS = 4.5 V
1.1
0.5
- 50 - 25
200
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.005
10
0.004
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
175
0.003
TJ = 150 °C
0.002
TJ = 25 °C
0.001
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
6
8
10
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
0.5
VDS - Drain-to-Source Voltage (V)
40
0.1
- 0.3
ID = 5 mA
- 0.7
ID = 250 μA
- 1.1
- 1.5
- 50 - 25
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
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4
25
Gate Charge
100
0.001
0.0
0
Qg - Total Gate Charge (nC)
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
1.4
0.8
0
VGS(th) Variance (V)
VGS = 10 V
ID = 30 A
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
VDS = 15 V
125
150
175
38
ID = 1 mA
36
34
32
30
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
ID - Drain Current (A)
100
100 μs
IDM Limited
1
0.1
0.01
0.01
1 ms
10 ms
100 ms, 1 s, 10 s, DC
ID Limited
10
Limited by RDS(on)*
TC = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67333.
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Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
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Vishay Siliconix
D2PAK / TO-263 and TO-262
Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQM100N04-2m7
SQM100N04-2M7-GE3
SQM100N04-2M7_GE3
SQM100N10-10
SQM100N10-10-GE3
SQM100N10-10_GE3
SQM110N05-06L
SQM110N05-06L-GE3
SQM110N05-06L_GE3
SQM110P06-8m9L
SQM110P06-8M9L-GE3
SQM110P06-8M9L_GE3
SQM120N02-1m3L
SQM120N02-1M3L-GE3
SQM120N02-1M3L_GE3
SQM120N03-1m5L
SQM120N03-1M5L-GE3
SQM120N03-1M5L_GE3
SQM120N04-1m7
SQM120N04-1M7-GE3
SQM120N04-1M7_GE3
SQM120N04-1m7L
SQM120N04-1M7L-GE3
SQM120N04-1M7L_GE3
SQM120N04-1m9
SQM120N04-1M9-GE3
SQM120N04-1M9_GE3
SQM120N06-06
SQM120N06-06-GE3
SQM120N06-06_GE3
SQM120N06-3m5L
SQM120N06-3M5L-GE3
SQM120N06-3M5L_GE3
SQM120N10-09
SQM120N10-09-GE3
SQM120N10-09_GE3
SQM120N10-3m8
SQM120N10-3M8-GE3
SQM120N10-3M8_GE3
SQM120P04-04L
SQM120P04-04L-GE3
SQM120P04-04L_GE3
SQM120P06-07L
SQM120P06-07L-GE3
SQM120P06-07L_GE3
SQM120P10-10m1L
-
SQM120P10_10m1LGE3
SQM200N04-1m1L
SQM200N04-1M1L-GE3
SQM200N04-1M1L_GE3
SQM200N04-1m7L
SQM200N04-1M7L-GE3
SQM200N04-1M7L_GE3
SQM200N04-1m8
SQM200N04-1M8-GE3
SQM200N04-1M8_GE3
SQM25N15-52
SQM25N15-52-GE3
SQM25N15-52_GE3
SQM35N30-97
SQM35N30-97-GE3
SQM35N30-97_GE3
SQM40N10-30
SQM40N10-30-GE3
SQM40N10-30_GE3
SQM40N15-38
SQM40N15-38-GE3
SQM40N15-38_GE3
SQM40P10-40L
SQM40P10-40L-GE3
SQM40P10-40L_GE3
SQM47N10-24L
SQM47N10-24L-GE3
SQM47N10-24L_GE3
SQM50020EL
-
SQM50020EL_GE3
SQM50N04-4m0L
SQM50N04-4M0L-GE3
SQM50N04-4M0L_GE3
SQM50N04-4m1
SQM50N04-4M1-GE3
SQM50N04-4M1_GE3
SQM50P03-07
SQM50P03-07-GE3
SQM50P03-07_GE3
SQM50P04-09L
SQM50P04-09L-GE3
SQM50P04-09L_GE3
SQM50P06-15L
SQM50P06-15L-GE3
SQM50P06-15L_GE3
SQM50P08-25L
SQM50P08-25L-GE3
SQM50P08-25L_GE3
SQM60030E
-
SQM60030E_GE3
SQM60N06-15
SQM60N06-15-GE3
SQM60N06-15_GE3
SQM60N20-35
SQM60N20-35-GE3
SQM60N20-35_GE3
SQM85N15-19
SQM85N15-19-GE3
SQM85N15-19_GE3
SQV120N10-3m8
SQV120N10-3m8-GE3
SQV120N10-3m8_GE3
SQV120N06-4m7L
-
SQV120N06-4m7L_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 24-Mar-16
Document Number: 67164
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000