Schottky Barrier Diodes (SBD) MA2YD28 Silicon epitaxial planar type For high speed switching Unit: mm 0.80±0.05 1.6±0.1 ■ Features 1 • Forward current (Average) IF(AV) = 1.5 A rectification is possible • Low forward voltage VF • Mini type 2-pin package 5˚ 2.6±0.1 3.5±0.1 0 to 0.1 2 ■ Absolute Maximum Ratings Ta = 25°C 0.45±0.1 0.55±0.1 0.16+0.1 –0.06 Reverse voltage Symbol Rating Unit VR 30 V VRRM 30 V IF(AV) 1.5 A IFSM 3 A Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Repetitive peak reverse voltage Forward current (Average) *1 Non-repetitive peak forward surge current *2 0 to 0.3 Parameter 0 to 0.1 5˚ 1: Anode 2: Cathode Mini2-F1 Package Marking Symbol: 2Z Note) *1: Mounted on a alumina PC board *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Symbol Conditions Min Typ Max Unit V VF1 IF = 0.5 A 0.35 0.39 VF2 IF = 1.0 A 0.40 0.44 0.45 0.49 VF3 IF = 1.5 A Reverse current IR VR = 30 V Terminal capacitance Ct VR = 10 V, f = 1 MHz 50 pF Reverse recovery time * trr IF = IR = 100 mA Irr = 10 mA , RL = 100 Ω 13 ns µA 100 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% Pulse Generator (PG-10N) Rs = 50 Ω Publication date: March 2003 Wave Form Analyzer (SAS-8130) V R Ri = 50 Ω A SKH00124AED 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10mA IF = IR = 100 mA RL = 100 Ω 1 MA2YD28 IF V F I R VR 104 250 102 125°C 75°C 10 25°C 1 −20°C 10−1 Terminal capacitance Ct (pF) 102 Ta = 150°C Reverse current IR (mA) Forward current IF (mA) 103 Ta = 150°C 125°C 10 1 75°C 10−1 25°C 10−2 10−2 10−3 0 0.2 0.4 Forward voltage VF (V) 2 Ct VR 103 0.6 10−3 0 5 10 15 20 25 Reverse voltage VR (V) SKH00124AED 30 Ta = 25°C 200 150 100 50 0 0 5 10 15 20 25 Reverse voltage VR (V) 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL