Switching Diodes MA27111 Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.27+0.05 –0.02 0.13+0.05 –0.02 Maximum peak reverse voltage Forward current Rating Unit VR 80 V VRM 80 V IF 100 mA Peak forward current IFM 225 mA Non-repetitive peak forward surge current * IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.52±0.03 Reverse voltage Symbol 0 to 0.01 Parameter 0.15 max. 0.60±0.05 5° 0.15 min. 1 ■ Absolute Maximum Ratings Ta = 25°C 0.15 min. 5° 1.00±0.05 • High-density mounting is possible • Short reverse recovery time trr • Small terminal capacitance Ct 1.40±0.05 2 ■ Features 1: Anode 2: Cathode SSSMini2-F2 Package Marking Symbol: S Note) *: t = 1 s ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Forward voltage VF IF = 100 mA Reverse voltage VR IR = 100 µA Reverse current IR VR = 75 V Terminal capacitance Ct VR = 0 V, f = 1 MHz Reverse recovery time * trr IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω Min Typ Max Unit 0.95 1.20 V 100 nA 2.0 pF 3 ns 80 0.6 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 10 MHz. 3. *: trr measurement circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: November 2003 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω SKF00066BED Output Pulse t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA27111 IF V F I R VR Ta = 150°C 25°C −20°C 1 10−1 100°C 103 102 25°C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 IF = 100 mA 0.8 10 mA 3 mA 0.4 0 20 IR T a 60 80 100 0 −40 120 Ct VR 102 10 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 103 0.8 0.6 0.4 0.2 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 0 20 40 60 80 100 Reverse voltage VR (V) SKF00066BED 80 120 160 200 IF(surge) tW 1.0 6V 40 103 f = 1 MHz Ta = 25°C 35 V 104 0 Ambient temperature Ta (°C) 1.2 VR = 75 V 1 −40 40 Reverse voltage VR (V) 105 Reverse current IR (nA) 1.2 10 Forward voltage VF (V) 2 Forward voltage VF (V) 100°C 10 1.6 104 Ta = 150°C Reverse current IR (nA) Forward current IF (mA) 102 10−2 VF T a 105 103 120 Ta = 25°C IF(surge) tW Non repetitive 102 10 1 10−1 10−1 1 10 Pulse width tW (ms) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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