SQ4401EY www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.014 RDS(on) () at VGS = - 4.5 V 0.023 ID (A) - 17.3 Configuration Single • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4401EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currenta Continuous Source Current (Diode ID TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range - 10 IS - 6.5 - 69 IAS - 30 PD TC = 125 °C V - 17.3 IDM EAS UNIT 45 7.14 2.4 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 85 RthJF 21 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Foot (Drain) °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). S11-2109 Rev. B, 31-Oct-11 1 Document Number: 65901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4401EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = - 250 μA - 40 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = - 40 V - - - 1.0 - - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 40 V, TJ = 125 °C VGS = 0 V VDS = - 40 V, TJ = 175 °C - - - 150 On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 30 - - VGS = - 10 V ID = - 10.5 A - 0.011 0.014 VGS = - 10 V ID = - 10.5 A, TJ = 125 °C - - 0.020 VGS = - 10 V ID = - 10.5 A, TJ = 175 °C - - 0.024 VGS = - 4.5 V ID = - 8.7 A - 0.017 0.023 - 30 - - 3400 4250 - 440 550 Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS = - 15 V, ID = - 10.5 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 350 436 Total Gate Chargec Qg - 74 115 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = - 10 V VDS = - 20 V, f = 1 MHz VDS = - 20 V, ID = - 10.5 A - 11 - - 16 - f = 1 MHz 1.16 - 3.21 - 58 85 VDD = - 15 V, RL = 15 ID - 1 A, VGEN = - 4.5 V, Rg = 6 - 76 105 - 67 85 - 44 55 td(on) tr td(off) tf pF nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 2.7 A, VGS = 0 - - - 69 A - - 0.8 - 1.1 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2109 Rev. B, 31-Oct-11 2 Document Number: 65901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4401EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 V GS = 10 V thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 V GS = 4 V 30 20 30 20 T C = 125 °C 10 10 T C = 25 °C V GS = 3 V T C = - 55 °C 0 0 0 2 4 6 8 V DS - Drain-to-Source Voltage (V) 0 10 2 4 6 8 V GS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 50 0.05 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 40 T C = - 55 °C 30 T C = 25 °C 20 T C = 125 °C 10 0.04 0.03 V GS = 4.5 V 0.02 V GS = 10 V 0.01 0 0 0 5 10 15 ID - Drain Current (A) 20 25 0 10 20 30 ID - Drain Current (A) 40 50 On-Resistance vs. Drain Current Transconductance 10 5500 ID = 10.5 A VGS - Gate-to-Source Voltage (V) 5000 4500 C - Capacitance (pF) 10 4000 Ciss 3500 3000 2500 2000 1500 Coss 1000 8 VDS = 20 V 6 4 2 Crss 500 0 0 0 10 20 30 V DS - Drain-to-Source Voltage (V) 0 40 20 30 40 50 60 Qg - Total Gate Charge (nC) 70 80 Gate Charge Capacitance S11-2109 Rev. B, 31-Oct-11 10 3 Document Number: 65901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4401EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) - 40 1.8 ID = 1 mA R DS(on) - On-Resistance (Normalized) ID = 10.5 A - 42 1.5 V GS = 10 V - 44 BVDSX 1.2 - 46 0.9 - 48 0.6 - 50 - 25 0 25 50 75 100 125 T J - Junction Temperature (°C) 150 - 50 - 50 175 0 25 50 75 100 125 T J - Junction Temperature (°C) 150 175 Breakdown Voltage vs. Junction Temperature On-Resistance vs. Junction Temperature 0.10 10 0.08 R DS(on) - On-Resistance (Ω) 100 I S - Source Current (A) - 25 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.06 0.04 T J = 125 °C 0.02 T J = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 V SD - Source-to-Drain Voltage (V) 0 1.2 2 4 6 8 V GS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage 1.0 0.8 VGS(th) Variance (V) ID = 250 μA 0.6 0.4 ID = 1 mA 0.2 0 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 T J - Temperature (°C) 150 175 Threshold Voltage S11-2109 Rev. B, 31-Oct-11 4 Document Number: 65901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4401EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 100 µs ID - Drain Current (A) Limited by RDS(on)* 10 1 ms 10 ms 1 100 ms 1s 10 s, DC 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 84 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2109 Rev. B, 31-Oct-11 5 Document Number: 65901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4401EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65901. S11-2109 Rev. B, 31-Oct-11 6 Document Number: 65901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix SO-8 Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package: OLD ORDERING CODE a NEW ORDERING CODE SQ4005EY - SQ4005EY-T1_GE3 SQ4050EY SQ4050EY-T1-GE3 SQ4050EY-T1_GE3 SQ4182EY SQ4182EY-T1-GE3 SQ4182EY-T1_GE3 SQ4184EY SQ4184EY-T1-GE3 SQ4184EY-T1_GE3 SQ4282EY SQ4282EY-T1-GE3 SQ4282EY-T1_GE3 SQ4284EY SQ4284EY-T1-GE3 SQ4284EY-T1_GE3 SQ4401EY SQ4401EY-T1-GE3 SQ4401EY-T1_GE3 SQ4410EY SQ4410EY-T1-GE3 SQ4410EY-T1_GE3 SQ4425EY SQ4425EY-T1-GE3 SQ4425EY-T1_GE3 SQ4431EY SQ4431EY-T1-GE3 SQ4431EY-T1_GE3 SQ4435EY SQ4435EY-T1-GE3 SQ4435EY-T1_GE3 DATASHEET PART NUMBER SQ4470EY SQ4470EY-T1-GE3 SQ4470EY-T1_GE3 SQ4483BEEY SQ4483BEEY-T1-GE3 SQ4483BEEY-T1_GE3 SQ4483EY - SQ4483EY-T1_GE3 SQ4532AEY - SQ4532AEY-T1_GE3 SQ4840EY SQ4840EY-T1-GE3 SQ4840EY-T1_GE3 SQ4850EY SQ4850EY-T1-GE3 SQ4850EY-T1_GE3 SQ4917EY SQ4917EY-T1-GE3 SQ4917EY-T1_GE3 SQ4920EY SQ4920EY-T1-GE3 SQ4920EY-T1_GE3 SQ4937EY SQ4937EY-T1-GE3 SQ4937EY-T1_GE3 SQ4940AEY SQ4940AEY-T1-GE3 SQ4940AEY-T1_GE3 SQ4946AEY SQ4946AEY-T1-GE3 SQ4946AEY-T1_GE3 SQ4949EY SQ4949EY-T1-GE3 SQ4949EY-T1_GE3 SQ4961EY SQ4961EY-T1-GE3 SQ4961EY-T1_GE3 SQ9407EY SQ9407EY-T1-GE3 SQ9407EY-T1_GE3 SQ9945BEY SQ9945BEY-T1-GE3 SQ9945BEY-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 21-Oct-15 Document Number: 66624 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000