SQ2351ES Datasheet

SQ2351ES
www.vishay.com
Vishay Siliconix
Automotive P-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 4.5 V
0.115
RDS(on) () at VGS = - 2.5 V
0.205
ID (A)
- 3.2
Configuration
S
1
3
S
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Single
TO-236
(SOT-23)
G
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
- 20
D
G
2
Top View
D
SQ2351ES
Marking Code: 8Sxxx
P-Channel MOSFET
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
SQ2351ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
LIMIT
- 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
- 3.2
- 1.8
IS
- 2.5
IDM
- 12.7
IAS
-6
EAS
1.8
PD
UNIT
2
0.67
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
175
RthJF
75
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-2312-Rev. B, 01-Oct-12
Document Number: 66716
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2351ES
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
VDS
VGS = 0, ID = - 250 μA
- 20
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 0.6
- 1.0
- 1.5
VDS = 0 V, VGS = ± 12 V
-
-
± 100
-
-
-1
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V
VDS = - 20 V
VGS = 0 V
VDS = - 20 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 20 V, TJ = 175 °C
-
-
- 150
VGS = - 4.5 V
VDS5 V
-8
-
-
VGS = - 4.5 V
ID = - 2.4 A
-
0.080
0.115
VGS = - 4.5 V
ID = - 2.4 A, TJ = 125 °C
-
-
0.168
VGS = - 4.5 V
ID = - 2.4 A, TJ = 175 °C
-
-
0.196
VGS = - 2.5 V
ID = - 1.8 A
VDS = - 10 V, ID = - 2.4 A
-
0.150
0.205
-
6
-
-
265
330
-
75
94
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
50
63
Total Gate Chargec
Qg
-
3.4
5.5
-
0.6
-
-
1.1
-
4.8
9.6
14.4
-
20
30
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Rg
VGS = 0 V
VDS = - 10 V, f = 1 MHz
VGS = - 4.5 V
VDS = - 10 V, ID = - 2.4 A
f = 1 MHz
td(on)
tr
td(off)
VDD = - 10 V, RL = 5.21 
ID  - 1.9 A, VGEN = - 4.5 V, Rg = 1 
tf
pF
nC

-
18
27
-
19
28
-
8
12
-
-
- 12.7
A
-
- 0.8
- 1.2
V
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 2 A, VGS = 0
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.





Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2312-Rev. B, 01-Oct-12
Document Number: 66716
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2351ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
12
10
VGS = 5.0 V thru 3.5 V
8
9
6
ID - Drain Current (A)
ID - Drain Current (A)
VGS = 3 V
VGS = 2.5 V
3
VGS = 2 V
T C = 25 °C
6
4
2
T C = 125 °C
VGS = 1.5 V
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
0.5
8
0.4
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
0
T C = - 55 °C
0
TC = - 55 °C
6
TC = 125 °C
4
2
VGS = 4.5 V
0.3
0.2
VGS = 10 V
0.1
0
5
0.0
0.0
0.4
0.8
1.2
1.6
ID - Drain Current (A)
2.0
2.4
0
2
4
6
8
10
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
500
4.5
ID = 2.4 A
VGS - Gate-to-Source Voltage (V)
4.0
C - Capacitance (pF)
400
Ciss
300
200
Coss
100
Crss
3.5
V DS = 10 V
3.0
2.5
2.0
1.5
1.0
0.5
0
0.0
0
5
10
15
VDS - Drain-to-Source Voltage (V)
Capacitance
S12-2312-Rev. B, 01-Oct-12
20
0
1
2
3
4
5
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 66716
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2351ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 1.8 A
10
1.7
V GS = 4.5 V
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
1.4
V GS = 2.5 V
1.1
0.8
T J = 150 °C
1
T J = 25 °C
0.1
0.01
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
0
175
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.0
0.5
ID = 250 μA
0.3
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
0.4
0.8
0.6
0.4
0.2
0.2
ID = 5 mA
0.1
0
T J = 150 °C
- 0.1
T J = 25 °C
0.0
0
1
2
3
4
- 0.2
- 50
5
- 25
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
125
150
175
VDS - Drain-to-Source Voltage (V)
- 21
- 22
ID = 1 mA
- 23
- 24
- 25
- 26
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2312-Rev. B, 01-Oct-12
Document Number: 66716
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2351ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
ID - Drain Current (A)
10
Limited by RDS(on)*
100 µs
1
1 ms
10 ms
100 ms
1 s, 10 s, DC
0.1
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 175 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2312-Rev. B, 01-Oct-12
Document Number: 66716
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2351ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66716.
S12-2312-Rev. B, 01-Oct-12
Document Number: 66716
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
Ordering Information
www.vishay.com
Vishay Siliconix
SOT-23
Ordering codes for the SQ rugged series power MOSFETs in the SOT-23 package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQ2301ES
SQ2301ES-T1-GE3
SQ2301ES-T1_GE3
SQ2303ES
SQ2303ES-T1-GE3
SQ2303ES-T1_GE3
SQ2308CES
SQ2308CES-T1-GE3
SQ2308CES-T1_GE3
SQ2309ES
SQ2309ES-T1-GE3
SQ2309ES-T1_GE3
SQ2310ES
SQ2310ES-T1-GE3
SQ2310ES-T1_GE3
SQ2315ES
SQ2315ES-T1-GE3
SQ2315ES-T1_GE3
SQ2318AES
SQ2318AES-T1-GE3
SQ2318AES-T1_GE3
SQ2319ADS
-
SQ2319ADS-T1_GE3
SQ2325ES
SQ2325ES-T1-GE3
SQ2325ES-T1_GE3
SQ2337ES
SQ2337ES-T1-GE3
SQ2337ES-T1_GE3
SQ2348ES
SQ2348ES-T1-GE3
SQ2348ES-T1_GE3
SQ2351ES
SQ2351ES-T1-GE3
SQ2351ES-T1_GE3
SQ2361AEES
SQ2361AEES-T1-GE3
SQ2361AEES-T1_GE3
SQ2361ES
-
SQ2361ES-T1_GE3
SQ2362ES
-
SQ2362ES-T1_GE3
SQ2389ES
-
SQ2389ES-T1_GE3
SQ2398ES
-
SQ2398ES-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 06-Jun-16
Document Number: 65844
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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1
AN807
Vishay Siliconix
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
0.150
3.8
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
Document Number: 70739
26-Nov-03
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
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Revision: 02-Oct-12
1
Document Number: 91000