BB202 Low-voltage variable capacitance diode Rev. 02 — 3 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification Low-voltage variable capacitance diode FEATURES BB202 MARKING • Very steep C/V curve TYPE NUMBER • C0.2: 30.5 pF; C2.3: 9.5 pF MARKING CODE BB202 L2 • C0.2 to C2.3 ratio: min. 2.5 • Very low series resistance PINNING • Ultra small SMD plastic package. PIN APPLICATIONS • Electronic tuning in FM radio • Voltage Controlled Oscillators (VCO). DESCRIPTION 1 cathode 2 anode handbook, 1 2 columns DESCRIPTION The BB202 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD523 ultra small SMD plastic package. 2 MBK441 The marking bar indicates the cathode. Fig.1 Simplified outline (SOD523) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 6 V IF continuous forward current − 10 mA Tstg storage temperature −55 +85 °C Tj operating junction temperature −55 +85 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL IR PARAMETER reverse current CONDITIONS MIN. TYP. MAX. UNIT VR = 6 V; see Fig.3 − − 10 nA VR = 6 V; Tj = 85 °C; see Fig 3 − − 100 nA rs diode series resistance f = 100 MHz; C = 30 pF − 0.35 0.6 Ω Cd diode capacitance VR = 0.2; f = 1 MHz; see Fig.2 and Fig.4 28.2 − 33.5 pF VR = 2.3; f = 1 MHz; see Fig.2 and Fig.4 7.2 − 11.2 pF f = 1 MHz 2.5 − − C d ( 0.2V ) -------------------C d ( 2.3V ) capacitance ratio Rev. 02 - 3 January 2008 2 of 6 NXP Semiconductors Product specification Low-voltage variable capacitance diode BB202 GRAPHICAL DATA MBL416 40 handbook, full pagewidth Cd (pF) 30 20 10 0 10-1 1 10 VR (V) Fig.2 Diode capacitance as a function of reverse voltage; typical values. MBL417 10−3 handbook, halfpage MBL418 103 handbook, halfpage IR (nA) TCd (K−1) 102 10 1 0 20 40 60 80 Tj (°C) 100 10−4 10−1 Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values. Rev. 02 - 3 January 2008 1 VR (V) 10 Temperature coefficient of diode capacitance as a function of reverse voltage; typical values. 3 of 6 NXP Semiconductors Product specification Low-voltage variable capacitance diode BB202 PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 Rev. 02 - 3 January 2008 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 4 of 6 BB202 NXP Semiconductors Low-voltage variable capacitance diode Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 02 - 3 January 2008 5 of 6 BB202 NXP Semiconductors Low-voltage variable capacitance diode Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BB202_N_2 20080103 Product data sheet - BB202_1 - - Modifications: BB202_1 (9397 750 09195) • Package outline drawing on page 4 changed 20020218 Product specification Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 January 2008 Document identifier: BB202_N_2