BAP51-02 General purpose PIN diode Rev. 03 — 2 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance. 1 2 APPLICATIONS • General RF applications. handbook, halfpage DESCRIPTION cathode anode 1 2 Top view General purpose PIN diode in a SOD523 ultra small SMD plastic package. DESCRIPTION MAM405 Marking code: K1. Fig.1 Simplified outline (SOD523) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 60 V IF continuous forward current − 50 mA Ptot total power dissipation − 715 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Ts = 90 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 50 mA − 0.95 1.1 V VR reverse voltage IR = 10 µA 50 − − V IR reverse current VR = 50 V − − 100 nA Cd diode capacitance VR = 0; f = 1 MHz − 0.4 − pF VR = 1 V; f = 1 MHz − 0.3 0.55 pF rD diode forward resistance VR = 5 V; f = 1 MHz − 0.2 0.35 pF IF = 0.5 mA; f = 100 MHz; note 1 − 5.5 9 Ω IF = 1 mA; f = 100 MHz; note 1 − 3.6 6.5 Ω IF = 10 mA; f = 100 MHz; note 1 − 1.5 2.5 Ω Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point Rev. 03 - 2 January 2008 VALUE UNIT 85 K/W 2 of 6 NXP Semiconductors Product specification General purpose PIN diode BAP51-02 GRAPHICAL DATA MGS323 MGS322 10 500 handbook, halfpage handbook, halfpage Cd (fF) rD (Ω) 400 5 300 200 2 100 1 10−1 0 1 4 0 10 I F (mA) 12 16 f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 Diode capacitance as a function of reverse voltage; typical values. MGT264 MGT265 0 0 handbook, halfpage 2 handbook, halfpage 2 | s21| | s21| (dB) −0.5 (dB) −5 (1) (2) (3) −1 −10 −1.5 −15 −2 −20 −2.5 0.5 1 1.5 2 2.5 3 −25 0.5 f (GHz) (1) IF = 10 mA. (2) IF = 1 mA. 1 1.5 2 2.5 3 f (GHz) (3) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Fig.4 20 VR (V) f = 100 MHz; Tj = 25 °C. Forward resistance as a function of forward current; typical values. 8 Insertion loss (|s21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Fig.5 Rev. 03 - 2 January 2008 Isolation (|s21|2) of the diode as a function of frequency; typical values. 3 of 6 NXP Semiconductors Product specification General purpose PIN diode BAP51-02 PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 Rev. 03 - 2 January 2008 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 4 of 6 BAP51-02 NXP Semiconductors General purpose PIN diode Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 03 - 2 January 2008 5 of 6 BAP51-02 NXP Semiconductors General purpose PIN diode Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BAP51-02_N_3 20080102 Product data sheet - BAP51-02_2 Modifications: • Package outline drawing on page 4 changed BAP51-02_2 (9397 750 07151) 20000706 Product specification - BAP51-02_N_1 BAP51-02_N_1 (9397 750 06152) 19990628 Preliminary specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 January 2008 Document identifier: BAP51-02_N_3