KGF12N05

DATASHEET
N-Channel 5.5V Power MOSFET
KGF12N05
Features
The KGF12N05 is a 5.5V, 1.9mΩ, chip-scale, N-channel,
multidirectional current flow MOSFET. The device uses
technology that uniquely integrates low cost CMOS and WLCSP
fabrication processes. The chip-scale WLCSP package offers
small area, low vertical profile and is fully compatible with
standard SMT assembly processes. The KGF12N05 device
offers unprecedented low on-resistance and total gate charge,
outperforming conventional trench MOSFETs and enabling
high frequency, low voltage switching. The device offers
extremely high power density, reducing the board size of
DC/DC converters and other power management systems.
• Industry leading figures of merit:
rDS(ON) × Qg and rDS(ON) × Qgd
• Low profile/small footprint chip-scale WLCSP package
• High frequency switching
• Known Good FET (KGF) Quality Assurance Process
Applications
• Low thermal resistance
• Point-of-load DC/DC converters
• Portable electronics
• OR’ing diodes
PRODUCT SUMMARY
ID
TA = +25°C
12A
Maximum
V(BR)DSS
ID = 10mA
5.5V
Minimum
rDS(ON)
VGS = 4.5V
1.9mΩ
Typical
rDS(ON)
VGS = 3.5V
2.1mΩ
Typical
Qg
ID = 12A
5nC
Typical
1.2nC
Typical
Qgd
Related Literature
• AN1968, “Unclamped Inductive Switching (UIS) Test and
Rating Methodology”
D
G
S
FIGURE 1. EQUIVALENT CIRCUIT
December 18, 2015
FN8787.1
1
FIGURE 2. N-CHANNEL MOSFET WLCSP PACKAGE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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KGF12N05
Ordering Information
PART NUMBER
TEMP RANGE
(°C)
PART MARKING
KGF12N05-400-SP
S
Pin Configuration
6 Bump WLCSP
Pin Descriptions
KGF12N05
(6 BUMP WLCSP)
LAND GRID ARRAY VIEW
5
S
1
-55 to +150
PACKAGE
(RoHS Compliant)
G
PIN #
PIN NAME
DESCRIPTION
1
G
Gate of MOSFET
2, 3, 4, 5
S
Source of MOSFET
6
D
Drain of MOSFET
6
D
2
S
4
S
S
3
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December 18, 2015
KGF12N05
Absolute Maximum Ratings
Thermal Information
(Note 1)
Drain-to-Source Voltage (VDS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5.5V
Gate-to-Source Voltage (VGS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5.5V
Drain Current
Continuous (ID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulsed (IDM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Single Pulse Avalanche Current (IAS)
L ≤ 50µH, RG ≤ 25Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Thermal Resistance (Typical)
JA (°C/W) JP (°C/W)
WLCSP Package . . . . . . . . . . . . . . . . . . . . . .
50
10
Maximum Power Dissipation (PD) (Note 2)
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W (10s)
TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6W
Junction and Storage Temperature Range (TJ, Tstg). . . . .-55°C to +150°C
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
1. TJ = +25°C unless otherwise noted.
2. When mounted on 1 inch square 2oz copper clad FR-4.
Electrical Characteristics
SYMBOL
TJ = +25°C unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
(Note 3)
TYP
(Note 4)
MAX
(Note 3)
UNIT
Drain-to-Source Breakdown Voltage
VGS = 0V, ID = 10mA
Zero Gate Voltage Drain Current
VDS = 3.5V, VGS = 0V, TJ = +25°C
1
µA
VDS = 5.5V, VGS = 0V, TJ = +25°C
25
µA
VDS = 5.5V, VGS = 0V, TJ = +125°C
250
µA
Gate-Body Leakage
VGS = 5.5V, VDS = 0V
150
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
0.62
0.80
V
rDS(ON)
Drain-to-Source On-State Resistance
VGS = 3.5V, ID = 12A
2.1
2.6
mΩ
VGS = 4.5V, ID = 12A
1.9
2.4
mΩ
VDS = 5.5V, VGS = 0V, f = 1MHz
V(BR)DSS
IDSS
IGSS
5.5
0.52
V
Ciss
Input Capacitance
750
940
pF
Coss
Output Capacitance
940
1175
pF
Crss
Reverse Transfer Capacitance
230
300
pF
Ciss
Input Capacitance
790
990
pF
Coss
Output Capacitance
1450
1800
pF
Crss
Reverse Transfer Capacitance
270
400
pF
VDS = 0V, VGS = 0V, f = 1MHz
rg
Gate Resistance
VDS = 0V, f = 1MHz
1.0
Ω
Qg
Total Gate Charge
VGS = 3.5V, ID = 12A, VDS = 4.4V
5.0
6.0
nC
Qgs
Gate-to-Source Charge
1.1
1.5
nC
Qgd
Gate-to-Drain Charge
1.2
2.0
nC
Qg
Total Gate Charge
VGS = 4.5V, ID = 12A, VDS = 4.4V
6.2
7.0
nC
trr
Source-to-Drain Reverse Recovery Time
IS = 3A, di/dt = 33A/µs
100
Diode Forward Voltage
IS = 5A, VGS = 0V
0.65
VSD
ns
1.00
V
NOTES:
3. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
4. Typical values are for TA = +25°C.
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December 18, 2015
KGF12N05
Typical Performance Curves
40
40
VGS = 5.0 TO 1.5V
35
ID - DRAIN CURRENT (A)
ID - DRAIN CURRENT (A)
35
30
25
20
15
10
5
30
25
20
15
0
0.5
1
1.5
TJ = +25°C
5
1.0V
0
TJ = +125°C
10
0
0.00
2
0.50
VDS - DRAIN-TO-SOURCE VOLTAGE (V)
20
30
ID - DRAIN CURRENT (A)
40
50
rDS(ON) - ON-STATE RESISTANCE (mΩ)
rDS(ON) - ON-STATE RESISTANCE (mΩ)
VGS = 4.5V
10
16
14
12
10
VGS = 3.5V
ID = 12A
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-25
0
25
50
75
100
125
150
TJ - JUNCTION TEMPERATURE (°C)
FIGURE 7. ON-STATE RESISTANCE vs JUNCTION TEMPERATURE
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VGS(th) - GATE THRESHOLD VOLTAGE (V)
(NORMALIZED)
rDS(ON) - ON-STATE RESISTANCE (mΩ)
1.4
-50
ID = 12A
8
6
4
2
0
0.00
1.00
2.00
3.00
4.00
VGS - GATE-TO-SOURCE VOLTAGE (V)
5.00
FIGURE 6. ON-RESISTANCE vs GATE-TO-SOURCE VOLTAGE
1.5
1.2
2.00
18
FIGURE 5. ON-RESISTANCE vs DRAIN CURRENT
1.3
1.50
FIGURE 4. TRANSFER CHARACTERISTICS
VGS = 3.5V
0
1.00
VGS - GATE-TO-SOURCE (V)
FIGURE 3. OUTPUT CHARACTERISTICS
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TJ = -55°C
1.4
1.3
ID = 250µA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100
125
150
TJ - JUNCTION TEMPERATURE (°C)
FIGURE 8. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
FN8787.1
December 18, 2015
KGF12N05
1.10
100
IS - SOURCE CURRENT (A)
V(BR)DSS - DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE (V) (NORMALIZED
Typical Performance Curves (Continued)
1.05
ID = 10mA
1.00
0.95
0.90
-50
-25
0
25
50
75
100
125
1
150
0
0.2
TJ - JUNCTION TEMPERATURE
C - CAPACITANCE (pF)
VGS - GATE-TO-SOURCE VOLTAGE (V)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
2
3
0.8
1
1.2
1600
1600
VDS = 4.4V
ID = 5A
VGS = 0 to 4.5V
0
0.6
FIGURE 10. SOURCE-TO-DRAIN DIODE FORWARD VOLTAGE
4.5
3.5
0.4
VSD - DIODE FORWARD VOLTAGE (V)
FIGURE 9. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE vs JUNCTION
TEMPERATURE
4.0
TJ = +25oC
TJ = +125oC
10
4
5
6
1400
1400
1200
1200
1000
1000
800
800
600
600
400
400
200
200
00
7
00
11
22
33
44
55
VDS - DRAIN-TO-SOURCE VOLTAGE
(V)
VDS - DRAIN-TO-SOURCE
VOLTAGE
(V)
QG - TOTAL GATE CHARGE (nC)
FIGURE 11. GATE CHARGE
FIGURE 12. CAPACITANCE
ID - DRAIN CURRENT (A)
100
1ms
10
10ms
100ms
1
rDS(ON) LIMIT
PACKAGE LIMIT
THERMAL LIMIT
0.1
DC
TA = +25oC, SINGLE PULSE
VGS = 4.5V
0.01
0.1
1
10
VDS - DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 13. MAXIMUM RATED FORWARD BIASED SAFE OPERATING AREA
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KGF12N05
r(t) - TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Typical Performance Curves (Continued)
1.00
0.5
0.2
0.10
0.1
0.05
0.02
= +50oC/W
SINGLE PULSE
0.01
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
t, TIME (s)
FIGURE 14. TRANSIENT THERMAL RESPONSE, JUNCTION-TO-AMBIENT
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that
you have the latest revision.
DATE
REVISION
CHANGE
December 18, 2015
FN8787.1
Added “Note 1. TJ = +25°C unless otherwise noted.” to Abs Max on page 3.
October 30, 2015
FN8787.0
Initial release
About Intersil
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address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
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Reliability reports are also available from our website at www.intersil.com/support.
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KGF12N05
Dimensional Outline and Pad Layout
Die Size = 1.47mm ± 0.005mm (square)
Pad Thickness = 3µm NiAu
Die Thickness = 400µm ± 15µm
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in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
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