KGF4N60

DATASHEET
N-Channel 60V Power MOSFET for Soft Switching
KGF4N60
Features
The KGF4N60 is a 60V, 33mΩ, chip scale, N-channel lateral
MOSFET. The device uses technology that uniquely integrates
low cost CMOS and WLCSP fabrication processes. The chip
scale package offers small area, low vertical profile and is fully
compatible with standard SMT assembly processes. The
KGF4N60 device offers unprecedented low ON-resistance and
total gate charge, outperforming conventional trench MOSFETs
and enabling high frequency, low voltage switching. The device
offers extremely high power density, reducing the board size of
DC/DC converters and other power management systems.
• Industry leading figures of merit:
rDS(ON) × Qg and rDS(ON) × Qgd
• High frequency switching
• Known Good FET (KGF) quality assurance process
• Low thermal resistance
Applications
• Point-of-load DC/DC converters
• Portable electronics
PRODUCT SUMMARY
• OR’ing diodes
ID
TA = +25°C
4A
Maximum
V(BR)DSS
ID = 250µA
60V
Minimum
rDS(ON)
VGS = 5V
33mΩ
Typical
Qg
ID = 12A
2.5nC
Typical
0.53nC
Typical
Qgd
• Low profile/small footprint chip scale WLCSP package
Related Literature
• AN1968, “Unclamped Inductive Switching (UIS) Test and
Rating Methodology”
D
G
S
FIGURE 1. EQUIVALENT CIRCUIT
February 2, 2016
FN8811.0
1
FIGURE 2. N-CHANNEL MOSFET CHIP SCALE WLCSP PACKAGE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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KGF4N60
Ordering Information
PART NUMBER
TEMP RANGE
(°C)
PART MARKING
KGF4N60
H
Pin Configuration
6 Bump WLCSP
Pin Descriptions
KGF4N60
(6 BUMP WLCSP)
LAND GRID ARRAY VIEW
5
S
1
G
-55 to +150
PACKAGE
(RoHS Compliant)
PIN #
PIN NAME
DESCRIPTION
1
G
Gate of MOSFET
2, 3, 4, 5
S
Source of MOSFET
6
D
Drain of MOSFET
6
4
S
D
S
2
S
3
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KGF4N60
Absolute Maximum Ratings
Thermal Information
(Note 1)
Drain-to-Source Voltage (VDS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate-to-Source Voltage (VGS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Drain Current
Continuous (ID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Pulsed (IDM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Single Pulse Avalanche Current (IAS)
L ≤ 300µH, RG ≤ 25Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Thermal Resistance (Typical) (Note 2)
JA (°C/W) JP (°C/W)
WLCSP Package . . . . . . . . . . . . . . . . . . . . . .
50
10
Maximum Power Dissipation (PD) (Note 2)
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6W
Junction and Storage Temperature Range (TJ, Tstg). . . . .-55°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
1. TJ = +25°C unless otherwise noted.
2. When mounted on 1 inch square 2oz copper clad FR-4.
Electrical Characteristics
SYMBOL
V(BR)DSS
IDSS
TJ = +25°C unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
(Note 3)
TYP
(Note 4)
MAX
(Note 3)
UNIT
Drain-to-Source Breakdown Voltage
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
VDS = 48V, VGS = 0V, TJ = +25°C
60
1
µA
V
VDS = 60V, VGS = 0V, TJ = +25°C
25
µA
VDS = 60V, VGS = 0V, TJ = +125°C
250
µA
150
nA
IGSS
Gate-to-Body Leakage
VGS = 15V, VDS = 0V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
1.8
V
rDS(ON)
Drain-to-Source On-State Resistance
VGS = 5V, ID = 4A
33
mΩ
Ciss
Input Capacitance
VDS = 60V, VGS = 0V, f = 1MHz
215
pF
Coss
Output Capacitance
205
pF
Crss
Reverse Transfer Capacitance
2.5
pF
Ciss
Input Capacitance
245
pF
Coss
Output Capacitance
640
pF
Crss
Reverse Transfer Capacitance
35
pF
VDS = 0V, VGS = 0V, f = 1MHz
rg
Gate Resistance
VDS = 0V, f = 1MHz
1.0
Ω
Qg
Total Gate Charge
VGS = 5V, ID = 4A, VDS = 48V
2.5
nC
Qgs
Gate-to-Source Charge
0.99
nC
Qgd
Gate-to-Drain Charge
0.53
nC
42
ns
trr
VSD
Source-to-Drain Reverse Recovery Time
IS = 4A, di/dt = 33A/µs
Diode Forward Voltage
IS = 4A, VGS = 0V
0.65
1.00
V
NOTES:
3. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
4. Typical values are for TA = +25°C.
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KGF4N60
Typical Performance Curves
25
10
VGS = 10V TO 3V
VGS = 3V
8
ID - DRAIN CURRENT (A)
ID - DRAIN CURRENT (A)
9
7
6
5
VGS = 2.75V
4
3
2
20
15
10
TJ = +1 25°C
5
0
0
0.0
2.0
4.0
6.0
8.0
10.0
0.0
0.5
1.0
1.5
FIGURE 3. OUTPUT CHARACTERISTICS
2 .5
3.0
3.5
4.0
4.5
5.0
FIGURE 4. TRANSFER CHARACTERISTICS
50
1.6
rDS(ON) - ON-STATE RESISTANCE
(NORMALIZED)
rDS(ON) - ON-STATE RESISTANCE (Ω)
2.0
VGS - GATE-TO -SOURCE (V)
VDS - DRAIN-TO-SOURCE VOLTAGE (V)
45
40
VGS = 5V
35
30
25
20
1.5
1.4
1.3
VGS = 5V
I D = 4A
1.2
1.1
1.0
0.9
0.8
0.7
0.6
15
0.0
2.0
4.0
6.0
8.0
-60
10.0
-4 0
I D - DR AIN CURRENT (A)
180
160
140
I D = 4A
100
80
60
40
20
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
VGS - GATE-TO-SOURCE VOLTAGE (V)
FIGURE 7. DRAIN-TO-SOURCE ON-RESISTANCE vs GATE-TO-SOURCE
VOLTAGE
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4
0
20
40
60
80
100 120 140 160
FIGURE 6. DRAIN TO SOURCE ON-RESISTANCE vs JUNCTION
TEMPERATURE
VGS(th) - GATE THRESHOLD VOLTAGE
(NORMALIZED)
200
120
-20
TJ - JUNCTION TEMPERATURE (°C)
FIGURE 5. DRAIN-TO-SOURCE ON-RESISTANCE vs DRAIN CURRENT
rDS(ON) - ON-STATE RESISTANCE (mΩ)
TJ = -55°C
TJ = +25°C
1
1.5
1.4
1.3
1.2
1.1
I D = 250µA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-60
-40
-20
0
20
40
60
80
100 120 140 160
TJ - JUNCTION TEMPERATURE (°C)
FIGURE 8. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
FN8811.0
February 2, 2016
KGF4N60
IS - SOURCE CURRENT (A)
100 .0
10.0
TJ = +125°C
TJ = +25°C
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V(BR)DSS - DRAIN-TO-SOURCE VOLTAGE
(NORMALIZED)
Typical Performance Curves (Continued)
1.20
1.15
1.10
I D = 250µA
1.05
1.00
0.95
0.90
0.85
0.80
-60
-40
-20
VSD - SOURCE-TO-DRAIN VOLTAGE (V)
0
20
40
60
80
100 120 140 160
TJ - JUNCTION TEMPERATURE (°C)
FIGURE 9. SOURCE-TO-DRAIN BREAKDOWN DIODE FOWARD
VOLTAGE
FIGURE 10. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE vs JUNCTION
TEMPERATURE
C oss
4.5
VDS = 48V
I D = 4A
4.0
C - CAPACITANCE (pF)
VGS - GATE-TO-SOURCE VOLTAGE (V)
100 0
5.0
3.5
3.0
2.5
2.0
1.5
C iss
100
C rss
10
1.0
0.5
1
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
Qg - TOTAL GATE CHARGE (nC)
3.0
10
20
30
40
50
60
VDS - DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11. GATE CHARGE
FIGURE 12. CAPACITANCE
100 .00
ID - DRAIN CURRENT (A)
r DS(ON) LIMITED
VGS = 5V
10.00
100µs
1ms
1.00
10ms
100ms
0.10
rDS(ON) LIMIT
PACKAGE LIMIT
THERMAL LIMIT
TA = +25o C,
SINGLE PULSE
0.01
0.10
1.00
10.00
DC
100 .00
VDS - DRAIN-TO-SOURCE VOLTAG E (V)
FIGURE 13. MAXIMUM RATED FORWARD BIASED SAFE OPERATING AREA
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KGF4N60
r(t) - TRANSIENT THERMAL RESISTANCE
Typical Performance Curves (Continued)
1.00
0.50
0.20
0.10
0.10
0.05
0.02
SINGLE PULSE
0.01
100 E-6
1E- 3
10E -3
100 E-3
1E+0
10E +0
100 E+0
1E+3
TIME (s)
FIGURE 14. TRANSIENT THERMAL RESPONSE, JUNCTION-TO-AMBIENT
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that
you have the latest revision.
DATE
REVISION
February 2, 2016
FN8811.0
CHANGE
Initial release
About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
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Reliability reports are also available from our website at www.intersil.com/support.
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KGF4N60
Dimensional Outline and Pad Layout
0.18
0.465
0.285
R 0.35
0.2
0.645
R 0.05
0.285
0.4
0.464
0.182
0.928
0.4
0.4
0.464
0.646
0.464
0.2
45°
0.271
0.083
0.271
0.934
0.467
0.467
0.052
All Dimensions in mm
DIE SIZE = 1.47mm ±0.005mm (SQUARE)
PAD THICKNESS = 3µm NiAu
DIE THICKNESS = 400µm ±15µm
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in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
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without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
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