SKUT 115/12T V2 Absolute Maximum Ratings Symbol Conditions Values Unit Ts = 25 °C 127 A Ts = 85 °C 71 A Tj = 25 °C 1500 A Tj = 130 °C 1250 A Tj = 25 °C 11250 A²s Tj = 130 °C 7813 A²s VRSM 1300 V VRRM 1200 V Chip IT(AV) ITSM i2t SEMIPONT® 5 Three phase antiparallel thyristor module sinus 180° 10 ms 10 ms VDRM (di/dt)cr Tj = 130 °C (dv/dt)cr Tj = 130 °C Tj SKUT 115/12T V2 • Compact design • Two screws mounting • Heat ransfer and isolation through direct copper board (Low Rth) • Low resistance in steady-state and high reliability • High surge currents • Glass passivated thyrsitor chips • UL recognized, file no. E 63 532 • Integrated temperature sensor Typical Applications* • Soft starter • Light control(e.g. studios, theaters) • Temperature control (e.g. oven, chemical processes) Remarks • IRMS=105A , for W3C application, sin.180° and TS=85°C V 50 A/µs 500 V/µs -40 ... 125 °C Module Tstg Visol Features 1200 ac; 50Hz; r.m.s -40 ... 125 °C 1 min 3000 V 1s 3600 V Characteristics Symbol Conditions min. typ. max. Unit V Chip VT Tj = 25 °C, IT = 150 A 1.6 VT(TO) Tj = 130 °C 0.9 V rT Tj = 130 °C 5 m IDD;IRD Tj = 130 °C, VRD=VRRM 20 mA tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 µs tgr VD = 0.67 * VDRM 2 µs tq Tj = 130 °C IH Tj = 25 °C IL Tj = 25 °C, RG = 33 VGT Tj = 25 °C, d.c. 3 V IGT Tj = 25 °C, d.c. 150 mA VGD Tj = 130 °C, d.c. IGD Tj = 115 °C, d.c. Rth(j-s) Rth(j-s) Rth(j-s) Rth(j-s) Rth(j-s) Rth(j-s) continuous DC sin. 180° rec. 120° 150 µs 200 mA 600 mA 0.25 6 V mA per thyristor K/W per module K/W per thyristor K/W per module 0.32 K/W per thyristor K/W per module K/W Module K/W Rth(c-s) K/W Ms to heatsink 2.25 2.5 Mt Nm Nm a m/s² w 75 g 1670 3550 ± 2% K Temperature Sensor R100 B100/125 UT-T © by SEMIKRON Tr = 100 °C, tolerance = 3 % R(T)=1000[1+A(T-25°C)+B(T-25°C)2 ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 Rev. 0 – 05.04.2013 1 SKUT 115/12T V2 Fig. 2: Power dissipation per thyristor vs r.m.s. current Fig. 6: Transient thermal impedance Zth(j-s) Fig. 8: On state characteristics Fig. 9: Surge overload current vs. time Fig. 10: Gate trigger characteristic Fig.11: Temperature sensor characteristic 2 Rev. 0 – 05.04.2013 © by SEMIKRON SKUT 115/12T V2 UT-T SEMIPONT 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0 – 05.04.2013 3