SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS® 3 Fast IGBT4 Modules SKM200GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 600 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 229 A Tc = 80 °C 172 A 200 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 Typical Applications* • • • • Electronic welders at fsw up to 20 kHz DC/DC – converter Brake chopper Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C IFRM IFRM = 3xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tc = 25 °C 229 A Tc = 80 °C 172 A 200 A Tj Freewheeling diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 200 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 5.00 5.75 m 7.50 8.00 m 5.8 6.5 V 2.7 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 7.6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 12.3 nF f = 1 MHz 0.81 nF f = 1 MHz 0.69 nF 1130 nC 3.8 GAL © by SEMIKRON Rev. 3 – 03.09.2013 1 SKM200GAL12T4 Characteristics Symbol td(on) tr Eon td(off) tf Eoff SEMITRANS® 3 Fast IGBT4 Modules SKM200GAL12T4 rF • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 Typical Applications* Electronic welders at fsw up to 20 kHz DC/DC – converter Brake chopper Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Qrr Err Rth(j-c) chiplevel IRRM Qrr Err Rth(j-c) typ. chiplevel max. Unit 185 ns Tj = 150 °C 40 ns Tj = 150 °C 21 mJ Tj = 150 °C 425 ns Tj = 150 °C 82 ns Tj = 150 °C 20 mJ 0.14 K/W Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 4.5 5.1 m 6.3 6.8 m Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 4450 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 chiplevel rF min. Tj = 150 °C per IGBT Inverse diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 chiplevel IRRM Features • • • • Rth(j-c) Conditions VCC = 600 V IC = 200 A VGE = ±15 V RG on = 1 RG off = 1 di/dton = 5500 A/µs di/dtoff = 2300 A/µs 174 A 33 µC 13 mJ 0.26 K/W Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 4.5 5.1 m 6.3 6.8 m Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 4450 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per Diode 174 A 33.1 µC 13 mJ 0.26 K/W 20 nH Module LCE RCC'+EE' 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt TC = 25 °C 0.25 TC = 125 °C 0.5 0.02 to terminals M6 m m 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g GAL 2 Rev. 3 – 03.09.2013 © by SEMIKRON SKM200GAL12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 03.09.2013 3 SKM200GAL12T4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 3 – 03.09.2013 © by SEMIKRON SKM200GAL12T4 SEMITRANS 3 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 03.09.2013 5