SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS® 3 IGBT4 Modules SKM200GAR12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 600 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 229 A Tc = 80 °C 172 A 200 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 12kHz • UL recognized, file no. E63532 Typical Applications* IFRM IFRM = 3xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tc = 25 °C 229 A Tc = 80 °C 172 A 200 A Tj Freewheeling diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C • DC/DC – converter • Brake chopper • Switched reluctance motor Tstg Remarks Characteristics • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Visol Symbol IGBT VCE(sat) VCE0 AC sinus 50 Hz, t = 1 min Conditions IC = 200 A VGE = 15 V chiplevel chiplevel min. Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 5.00 5.75 m 7.50 8.00 m 5.8 6.5 V 2.7 mA VGE=VCE, IC = 7.6 mA ICES VGE = 0 V VCE = 1200 V Cres QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C V Unit VGE(th) VCE = 25 V VGE = 0 V 4000 max. VGE = 15 V chiplevel Coes A °C typ. rCE Cies 500 -40 ... 125 Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 12.3 nF f = 1 MHz 0.81 nF f = 1 MHz 0.69 nF 1130 nC 3.8 GAR © by SEMIKRON Rev. 1 – 21.08.2013 1 SKM200GAR12E4 Characteristics Symbol td(on) tr Eon td(off) tf Eoff SEMITRANS® 3 IGBT4 Modules SKM200GAR12E4 Rth(j-c) rF • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 12kHz • UL recognized, file no. E63532 Typical Applications* • DC/DC – converter • Brake chopper • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Qrr Err Rth(j-c) chiplevel IRRM Qrr Err Rth(j-c) typ. chiplevel max. Unit 204 ns Tj = 150 °C 40 ns Tj = 150 °C 21 mJ Tj = 150 °C 490 ns Tj = 150 °C 107 ns Tj = 150 °C 27 mJ 0.14 K/W Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 4.5 5.1 m 6.3 6.8 m Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 4450 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 chiplevel rF min. Tj = 150 °C per IGBT Inverse diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 chiplevel IRRM Features Conditions VCC = 600 V IC = 200 A VGE = ±15 V RG on = 1 RG off = 1 di/dton = 5500 A/µs di/dtoff = 2300 A/µs 174 A 33 µC 13 mJ 0.26 K/W Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 4.5 5.1 m 6.3 6.8 m Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 4450 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per Diode 174 A 33.1 µC 13 mJ 0.26 K/W 20 nH Module LCE RCC'+EE' 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt TC = 25 °C 0.25 TC = 125 °C 0.5 0.02 to terminals M6 m m 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g GAR 2 Rev. 1 – 21.08.2013 © by SEMIKRON SKM200GAR12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 21.08.2013 3 SKM200GAR12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 1 – 21.08.2013 © by SEMIKRON SKM200GAR12E4 SEMITRANS 3 GAR This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 21.08.2013 5