Si4459ADY Datasheet

Si4459ADY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) ()
ID
(A)d
0.005 at VGS = - 10 V
- 29
0.00775 at VGS = - 4.5 V
- 23
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
61 nC
APPLICATIONS
• Adaptor Switch
• Notebook
SO-8
S
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
D
Ordering Information: Si4459ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 30
± 20
- 29
- 23.5
- 19.7a, b
- 15.6a, b
- 70
- 6.5
ID
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
- 2.9a, b
- 30
45
7.8
5
3.5a, b
2.2a, b
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 80 °C/W.
d. Based on TC = 25 °C.
Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4459ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
- 31
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = - 30 V, VGS = 0 V
- 100
VDS = - 20 V, VGS = 0 V
- 75
VDS = - 30 V, VGS = 0 V, TJ = 75 °C
- 10
VDS = - 20 V, VGS = 0 V, TJ = 75 °C
-3
Gate-Source Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
ID(on)
RDS(on)
Forward Transconductancea
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
VDS  - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 15 A
tr
-1
- 2.5
- 30
0.005
VGS = - 4.5 V, ID = - 10 A
0.0062
0.00775
VDS = - 10 V, ID = - 15 A
24
µA

6000
VDS = - 15 V, VGS = 0 V, f = 1 MHz
860
pF
790
VDS = - 15 V, VGS = - 10 V, ID = - 20 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A
129
195
61
95
16.5
nC
23.5
f = 1 MHz
VDD = - 15 V, RL = 1.5 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
0.6
3
6
16
30
16
30
80
150
tf
20
40
75
150
130
260
60
120
40
80
tr
nA
S
td(on)
td(off)
V
A
0.0039
td(on)
td(off)
mV/°C
5.3
VDD = - 15 V, RL = 1.5 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
tf

ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 29
- 70
IS = - 3 A, VGS = 0 V
IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.71
- 1.2
V
67
130
ns
74
150
nC
22
45
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4459ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4.0
70
VGS = 10 thru 4 V
3.2
I D - Drain Current (A)
I D - Drain Current (A)
56
42
28
VGS = 3 V
2.4
TC = 125 °C
1.6
TC = 25 °C
0.8
14
TC = - 55 °C
0.0
0.0
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
5
0.8
Output Characteristics
2.4
3.2
4.0
Transfer Characteristics
9000
0.008
7200
0.007
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.6
VGS - Gate-to-Source Voltage (V)
0.006
0.005
Ciss
5400
3600
VGS = 10 V
1800
0.004
Coss
Crss
0
0.003
0
14
28
42
ID - Drain Current (A)
56
0
70
6
12
18
24
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
10
VDS = 10 V
R DS(on) - On-Resistance (Normalized)
ID = 20 A
VGS - Gate-to-Source Voltage (V)
30
8
VDS = 15 V
VDS = 20 V
6
4
2
0
0
30
60
90
120
150
ID = 15 A
1.4
VGS = 10 V
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4459ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.030
100
ID = 15 A
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.024
0.018
0.012
TJ = 125 °C
0.006
TJ = 25 °C
0.000
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
6
8
10
On-Resistance vs. Gate-to-Source Voltage
200
0.8
0.6
160
ID = 250 µA
0.4
Power (W)
V GS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
ID = 5 mA
0.2
120
80
0.0
40
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
TJ - Temperature (°C)
0.01
0.1
Time (s)
1
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by R DS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
BVDSS
0.01
0.01
100
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area
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Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4459ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
35
I D - Drain Current (A)
28
21
14
7
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
10
2.0
8
1.6
Power (W)
Power (W)
Current Derating*
6
4
1.2
0.8
0.4
2
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Foot
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4459ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69979.
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Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000