Si4477DY Datasheet

Si4477DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d
0.0062 at VGS = - 4.5 V
- 26.6
0.0105 at VGS = - 2.5 V
- 20.6
VDS (V)
- 20
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
59 nC
APPLICATIONS
• Load Switch
• Adapter Switch
- Notebook
- Game Station
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
S
G
Top View
D
Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 20
± 12
ID
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
- 2.5a, b
30
45
6.6
4.2
3a, b
1.95a, b
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 26.6
- 21.3
- 18a, b
- 14.5a, b
- 60
- 5.5
IDM
Pulsed Drain Current
Unit
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
34
15
Maximum
41
19
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 80 °C/W.
d. Based on TC = 25 °C.
Document Number: 64829
S09-0858-Rev. A, 18-May-09
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1
Si4477DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
tr
mV/°C
4.1
- 0.6
- 1.5
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≥ - 10 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 18 A
- 30
0.0062
VGS = - 2.5 V, ID = - 14 A
0.0085
0.0105
VDS = - 10 V, ID = - 3.5 A
10
4600
VDS = - 10 V, VGS = 0 V, f = 1 MHz
980
pF
175
VDS = - 10 V, VGS = - 10 V, ID = - 18 A
125
190
59
90
VDS = - 10 V, VGS = - 4.5 V, ID = - 18 A
10
f = 1 MHz
1.3
2.6
13
20
nC
19
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
10
20
100
150
tf
25
40
42
60
tr
Ω
S
td(on)
td(off)
µA
A
0.0051
td(on)
td(off)
V
- 13
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
tf
42
60
100
150
42
60
Ω
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 5.5
- 60
IS = - 5 A, VGS = 0 V
IF = - 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.75
- 1.2
V
42
60
ns
40
60
nC
20
22
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64829
S09-0858-Rev. A, 18-May-09
Si4477DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
1.5
VGS = 5 V thru 2.5 V
1.2
I D - Drain Current (A)
I D - Drain Current (A)
45
VGS = 2 V
30
0.9
0.6
TC = 25 °C
15
0.3
TC = 125 °C
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
TC = -- 55 °C
0.0
0.0
2.5
0.5
VDS - Drain-to-Source Voltage (V)
1.0
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.016
6000
5000
Ciss
0.012
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.5
VGS = 2.5 V
0.008
VGS = 4.5 V
4000
3000
2000
Coss
0.004
1000
0.000
Crss
0
0
15
30
45
60
0
10
15
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
6
20
1.8
ID = 18 A
ID = 18 A
4
VDS = 5 V
VDS = 15 V
2
0
0
20
40
60
80
1.5
VGS = 4.5 V
(Normalized)
VDS = 10 V
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
VDS - Drain-to-Source Voltage (V)
1.2
VGS = 2.5 V
0.9
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64829
S09-0858-Rev. A, 18-May-09
150
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3
Si4477DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
TJ = 25 °C
ID = 18 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = - 50 °C
0.1
0.01
0.04
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
VSD - Source-to-Drain Voltage (V)
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.55
100
0.40
80
ID = 250 µA
0.25
Power (W)
VGS(th) Variance (V)
2
ID = 1 mA
0.10
60
40
- 0.05
20
- 0.20
- 0.35
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
1
10
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
0.1
Time (s)
TJ - Temperature (°C)
Limited by RDS(on)*
10 µs
100 µs
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
TA = 25 °C
Single Pulse
1s
10 s
100 s, DC
0.1
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 64829
S09-0858-Rev. A, 18-May-09
Si4477DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
I D - Drain Current (A)
25
20
15
10
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
8
2.0
1.6
Power (W)
Power (W)
6
4
1.2
0.8
2
0.4
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Foot
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64829
S09-0858-Rev. A, 18-May-09
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Si4477DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64829.
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Document Number: 64829
S09-0858-Rev. A, 18-May-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000