DATASHEET

IGNS
EW DES
N
R
O
F
NDED
EMENT
COMME
REPL AC
D
E
NO T RE
D
N
ter at
E
OMM
port Cen /tsc
p
u
S
l
N O REC
a
m
nic
tersil.co
our Tech
contact ERSIL or www.in
Data
July 21, 2005
-INT
1-888Sheet
Multiple Linear Power Controller with
ACPI Control Interface
FN4882.5
Features
The HIP6503 complements either an HIP6020 or an
HIP6021 in ACPI-compliant designs for microprocessor and
computer applications. The IC integrates four linear
controllers/regulators, switching, monitoring and control
functions into a 20 pin SOIC package. One linear controller
generates the 3.3VDUAL/3.3VSB voltage plane from the ATX
supply’s 5VSB output, powering the south bridge and the
PCI slots through an external pass transistor during sleep
states (S3, S4/S5). A second transistor is used to switch in
the ATX 3.3V output for operation during S0 and S1/S2
(active) operating states. A linear controllers/regulator
supplies at choice either of 2.5V or 3.3V memory power
through external pass transistors (switch for 3.3V setting) in
active states. During sleep states, integrated pass
transistors supply the sleep power. Another controller
powers up the 5VDUAL plane by switching in the ATX 5V
output in active states, and the ATX 5VSB in sleep states.
Two internal regulators output both a dedicated, noise-free
2.5V clock chip supply, as well as a 1.8V ICH2 resume well
voltage. The HIP6503’s operating mode (active outputs or
sleep outputs) is selectable through two digital control pins,
S3 and S5. Enabling sleep state support on the 5VDUAL
output is offered through the EN5VDL pin. In active state, the
3.3VDUAL/3.3VSB and 2.5VMEM/3.3VMEM linear regulators
use external N-channel pass MOSFETs to connect the
outputs directly to the 3.3V input supplied by an ATX power
supply, for minimal losses. In sleep state, power delivery on
both outputs is transferred to NPN transistors. Active state
regulation on the 2.5VMEM output is performed through an
external NPN transistor. The 5VDUAL output is powered
through two external MOS transistors. In sleep states, a
PMOS (or PNP) transistor conducts the current from the ATX
5VSB output; while in active state, current flow is transferred
to an NMOS transistor connected to the ATX 5V output. The
operation of the 5VDUAL output is dictated not only by the
status of the S3 and S5 pins, but that of the EN5VDL pin as
well. The 3.3VDUAL/3.3VSB and 1.8VSB outputs are active
for as long as the ATX 5VSB voltage is applied to the chip.
The 2.5VCLK output is only active during S0 and S1/S2, and
uses the 3V3 pin as input source for its internal pass
element.
• Provides 5 ACPI-Controlled Voltages
- 5VDUAL USB/Keyboard/Mouse
- 3.3VDUAL/3.3VSB PCI/Auxiliary/LAN
- 2.5VMEM RDRAM or 3.3VMEM SDRAM
- 2.5VCLK Clock/Processor Terminations
- 1.8VSB ICH2 Resume Well
• Excellent Output Voltage Regulation
- All Outputs: 2.0% Over Temperature (as applicable)
• Small Size; Very Low External Component Count
• RDRAM/SDRAM/DDRAM Memory Support
• Undervoltage Monitoring of All Outputs with Centralized
FAULT Reporting and Temperature Shutdown
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• ACPI-Compliant Power Regulation for Motherboards
Ordering Information
TEMP.
RANGE (°C)
PART NUMBER
PACKAGE
PKG.
DWG. #
HIP6503CB
0 to 70
20 Ld SOIC
HIP6503CBZ (Note)
0 to 70
20 Ld SOIC (Pb-free) M20.3
HIP6503CBZ-T (Note) 20 Ld SOIC Tape and Reel
(Pb-free)
HIP6503EVAL1
M20.3
M20.3
Evaluation Board
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100% matte
tin plate termination finish, which are RoHS compliant and compatible with
both SnPb and Pb-free soldering operations. Intersil Pb-free products are
MSL classified at Pb-free peak reflow temperatures that meet or exceed
the Pb-free requirements of IPC/JEDEC J STD-020.
Pinout
HIP6503
(SOIC)
TOP VIEW
5VSB
1
1V8IN 2
1V8SB 3
3V3DLSB 4
3V3DL 5
VCLK 6
3V3 7
20 VSEN2
19 DRV2
18 5V
17 12V
16 SS
15 5VDL
14 5VDLSB
EN5VDL
8
13 DLA
S3
9
12 FAULT/MSEL
S5 10
1
HIP6503
11
GND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2001, 2005. All Rights Reserved
Block Diagram
12V
5V 3V3
3V3DL
3V3DLSB
EA4
DLA 5VDLSB
5VSB
-
+
5VSB POR
TEMPERATURE
MONITOR
(TMON)
12V MONITOR
4.4V/3.4V
2
10.8V/9.8V
3V3 MONITOR
5V MONITOR
1V8IN
4.5V/4.25V
EA3
2.97V/2.8V
+
-
TO UV
DETECTOR
1V8SB
TO 3V3
MONITOR AND CONTROL
+
TO
UV DETECTOR
EA3
-
40A
FAULT/MSEL
VCLK
UV DETECTOR
+
-
TO 5V
1.265V
10A
DRV2
TO UV
DETECTOR
-
+
UV COMP
EA2
+
+
4.15V
5VDL
-
GND
VSEN2
SS
S3
S5
EN5VDL
FN4882.5
July 21, 2005
FIGURE 1.
HIP6503
TO 5VSB
HIP6503
Simplified Power System Diagram
+5VIN
+12VIN
+5VSB
+3.3VIN
1.8V
Q1
LINEAR
LINEAR
REGULATOR
1.8VSB
CONTROLLER
VMEM
2.5V/3.3V
Q2
LINEAR
CONTROLLER
Q3
3.3VDUAL/3.3VSB
LINEAR
VCLK
REGULATOR
2.5V
Q4
3.3V
FAULT\MSEL
CONTROL
LOGIC
HIP6503
Q5
5VDUAL
5V
SHUTDOWN
SX
2
EN5VDL
FIGURE 2.
Typical Application
+5VIN
+12VIN
+5VSB
+3.3VIN
12V
VOUT1
5VSB
3V3
1V8SB
1.8VSB
Q1
DRV2
5V
COUT1
1V8IN
VSEN2
VOUT2
3V3DLSB
Q2
2.5/3.3VMEM
COUT2
Q3
VOUT3
VOUT4
3V3DL
3.3VDUAL/3.3VSB
COUT3
FAULT/MSEL
HIP6503
VCLK
2.5VCLK
COUT4
Q4
5VDLSB
RSEL
FAULT
DLA
S3
SLP_S3
Q5
S5
SLP_S5
VOUT5
5VDL
EN5VDL
EN5VDL
COUT5
SS
CSS
SHUTDOWN
5VDUAL
GND
FIGURE 3.
3
FN4882.5
July 21, 2005
HIP6503
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V5VSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to +14.5V
DLA, DRV2 . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to V12V +0.3V
All Other Pins . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 5VSB + 0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 3
Thermal Resistance (Typical, Note 1)
JA (°C/W)
SOIC Package (Note 1) . . . . . . . . . . . . . . . . . . . . . .
60
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Supply Voltage, V5VSB . . . . . . . . . . . . . . . . . . . . . . . . . . . +5V 5%
Lowest 5VSB Supply Voltage Guaranteeing Parameters . . . . +4.5V
Digital Inputs, VSX, VEN5VDL . . . . . . . . . . . . . . . . . . . . . . .0 to +5.5V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Junction Temperature Range. . . . . . . . . . . . . . . . . . . . 0°C to 125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted Refer to Figures 1, 2 and 3
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
30
-
mA
-
14
-
mA
Rising 5VSB POR Threshold
-
-
4.5
V
5VSB POR Hysteresis
-
1.0
-
V
Rising 12V Threshold
-
-
10.8
V
12V Hysteresis
-
1.0
-
V
Rising 3V3 and 5V Thresholds
-
90
-
%
3V3 and 5V Hysteresis
-
5
-
%
Falling Threshold Timeout (All Monitors)
-
10
-
s
VCC SUPPLY CURRENT
Nominal Supply Current
I5VSB
Shutdown Supply Current
I5VSB(OFF)
VSS = 0.8V
POWER-ON RESET, SOFT-START, AND VOLTAGE MONITORS
Soft-Start Current
ISS
-
10
-
A
Shutdown Voltage Threshold
VSD
-
-
0.8
V
-
-
2.0
%
-
1.8
-
V
1V8SB Undervoltage Rising Threshold
-
1.494
-
V
1V8SB Undervoltage Hysteresis
-
54
-
mV
250
300
-
mA
-
-
2.0
%
1.8VSB LINEAR REGULATOR (VOUT1)
Regulation
1V8SB Nominal Voltage Level
V1V8SB
1V8SB Output Current
I1V8SB
1V8IN = 3.3V
2.5/3.3VMEM LINEAR REGULATOR (VOUT2)
Regulation (Note 2)
VSEN2 Nominal Voltage Level
VVSEN2
RSEL = 1k
-
2.5
-
V
VSEN2 Nominal Voltage Level
VVSEN2
RSEL = 10k
-
3.3
-
V
VSEN2 Undervoltage Rising Threshold
-
83
-
%
VSEN2 Undervoltage Hysteresis (Note 3)
-
3
-
%
250
300
-
mA
VSEN2 Output Current
IVSEN2
4
5VSB = 5V
FN4882.5
July 21, 2005
HIP6503
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted Refer to Figures 1, 2 and 3 (Continued)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
220
-
-
mA
-
200
-

-
-
2.0
%
-
3.3
-
V
3V3DL Undervoltage Rising Threshold
-
2.739
-
V
3V3DL Undervoltage Hysteresis
-
99
-
mV
5
10
-
mA
-
90
-

-
-
2.0
%
-
2.5
-
V
VCLK Undervoltage Rising Threshold
-
2.075
-
V
VCLK Undervoltage Hysteresis
-
75
-
mV
500
800
-
mA
5VDL Undervoltage Rising Threshold
-
4.150
-
V
5VDL Undervoltage Hysteresis
-
150
-
mV
-20
-
-40
mA
-
350
-

20
25
30
ms
-
200
-
s
High Level Input Threshold
-
-
2.2
V
Low Level Input Threshold
0.8
-
-
V
-
50
-
k
-
100
-

125
-
-
°C
-
155
-
°C
DRV2 Output Drive Current
IDRV2
DRV2 Output Impedance
TEST CONDITIONS
5VSB = 5V, RSEL = 1k
RSEL = 10k
3.3VDUAL/3.3VSB LINEAR REGULATOR (VOUT3)
Sleep State Regulation
3V3DL Nominal Voltage Level
V3V3DL
3V3DLSB Output Drive Current
I3V3DLSB
5VSB = 5V
DLA Output Impedance
2.5VCLK LINEAR REGULATOR (VOUT4)
Regulation
VCLK Nominal Voltage Level
VVCLK
VCLK Output Current (Note 4)
IVCLK
V3V3 = 3.3V
5VDUAL SWITCH CONTROLLER (VOUT5)
5VDLSB Output Drive Current
I5VDLSB
5VDLSB = 4V, 5VSB = 5V
5VDLSB Pull-Up Impedance to 5VSB
TIMING INTERVALS
Active State Assessment Past Input UV
Thresholds (Note 5)
Active-to-Sleep Control Input Delay
CONTROL I/O (S3, S5, EN5VDL, FAULT/MSEL)
S3, S5 Internal Pull-up Impedance to 5VSB
FAULT Output Impedance
FAULT = high
TEMPERATURE MONITOR
Fault-Level Threshold (Note 6)
Shutdown-Level Threshold (Note 6)
NOTES:
2. Sleep-State Only for 3.3V Setting
3. Parameters not guaranteed for 5VSB < 4.0V.
4. At Ambient Temperatures Less Than 50°C.
5. Guaranteed by Correlation.
6. Guaranteed by Design.
5
FN4882.5
July 21, 2005
HIP6503
Functional Pin Description
3V3 (Pin 7)
Connect this pin to the ATX 3.3V output. This pin provides
the output current for the 2V5CLK pin, and is monitored for
power quality.
overtemperature event, this pin is used to report the fault
condition by being pulled to 5VSB.
SS (Pin 16)
Provide a very well de-coupled 5V bias supply for the IC to
this pin by connecting it to the ATX 5VSB output. This pin
provides the output current for the VSEN1 and VSEN2 pins,
as well as the base current for Q2. The voltage at this pin is
monitored for power-on reset (POR) purposes.
Connect this pin to a small ceramic capacitor (no less than
5nF; 0.1F recommended). The internal soft-start (SS)
current source along with the external capacitor creates a
voltage ramp used to control the ramp-up of the output
voltages. Pulling this pin low with an open-drain device shuts
down all the outputs as well as force the FAULT pin low. The
CSS capacitor is also used to provide a controlled voltage
slew rate during active-to-sleep transitions on the
3.3VDUAL/3.3VSB and 2.5VMEM/3.3VMEM outputs.
5V (Pin 18)
VSEN2 (Pin 20)
Connect this pin to the ATX 5V output. This pin provides the
base bias current for Q1, and is monitored for power quality.
Connect this pin to the ATX 12V output. This pin provides the
gate bias voltage for Q3, Q5 and Q6, and is monitored for
power quality.
Connect this pin to the memory output (VOUT2). In sleep
states, this pin is regulated to 2.5V through an internal pass
transistor capable of delivering 300mA (typically). The
active-state voltage at this pin is regulated through an
external NPN transistor connected at the DRV2 pin. During
all operating states, the voltage at this pin is monitored for
under-voltage events.
GND (Pin 11)
DRV2 (Pin 19)
Signal ground for the IC. All voltage levels are measured
with respect to this pin.
Connect this pin to the base of a suitable NPN transistor.
This pass transistor regulates the 2.5V output from the ATX
3.3V during active states operation.
5VSB (Pin 1)
12V (Pin 17)
S3 and S5 (Pins 9 and 10)
These pins switch the IC’s operating state from active (S0,
S1/S2) to S3 and S4/S5 sleep states. These are digital
inputs featuring internal 50k (typical) resistor pull-ups to
5VSB. Internal circuitry de-glitches these pins for
disturbances lasting as long as 2s (typically). Additional
circuitry blocks any illegal state transitions (such as S3 to
S4/S5 or vice versa). Respectively, connect S3 and S5 to the
computer system’s SLP_S3 and SLP_S5 signals.
EN5VDL (Pin 8)
This pin enables or disables sleep state support on the
5VDUAL output in response to S3 and S4/S5 requests. This
is a digital input pin whose status can only be changed
during active state operation or during chip shutdown (SS
pin grounded by external open-drain device or chip bias
below POR level). The input information is latched-in when
entering a sleep state, as well as following 5VSB POR
release or exit from shutdown. EN5VDL is internally pulled
high through a 40A current source.
FAULT/MSEL (Pin 12)
This is a multiplexed function pin allowing the setting of the
memory output voltage to either 2.5V or 3.3V (for RDRAM or
SDRAM memory systems). An internal 40A current source
creates a voltage across an external resistor - this voltage
level is compared to an internal 200mV reference and the
memory regulator output voltage is set.
In case of an undervoltage on any of the controlled outputs,
on any of the monitored ATX supplies, or in case of an
6
3V3DL (Pin 5)
Connect this pin to the 3.3V dual/stand-by output (VOUT3).
In sleep states, the voltage at this pin is regulated to 3.3V; in
active states, ATX 3.3V output is delivered to this node
through a fully on N-MOS transistor. During all operating
states, this pin is monitored for under-voltage events.
3V3DLSB (Pin 4)
Connect this pin to the base of a suitable NPN transistor. In
sleep state, this transistor is used to regulate the voltage at
the 3V3DL pin to 3.3V.
DLA (Pin 13)
Connect this pin to the gates of suitable N-MOSFETs, which
in active state, switch in the ATX 3.3V and 5V outputs into
the 3.3VMEM, 3.3VDUAL/3.3VSB and 5VDUAL outputs,
respectively.
5VDL (Pin 15)
Connect this pin to the 5VDUAL output (VOUT5). In either
operating state, the voltage at this pin is provided through a
fully on MOS transistor. This pin is also monitored for undervoltage events.
5VDLSB (Pin 14)
Connect this pin to the gate of a suitable P-MOSFET or
bipolar PNP. In sleep state, this transistor is switched on,
connecting the ATX 5VSB output to the 5VDUAL regulator
output.
FN4882.5
July 21, 2005
HIP6503
TABLE 1. 5VDUAL OUTPUT (VOUT5) TRUTH TABLE
1V8SB (Pin 3)
This pin is the output of the internal 1.8V regulator (VOUT1).
This internal regulator operates for as long as 5VSB is
applied to the HIP6503. This pin is monitored for undervoltage events.
EN5VDL
S5
S3
5VDL
0
1
1
5V
S0, S1 States (Active)
0
1
0
0V
S3
0
0
1
Note
This pin is the input supply for the 1.8V internal regulator’s
pass element. Connect this pin to the 3.3VDUAL/3.3VSB
output.
0
0
0
0V
S4/S5
1
1
1
5V
S0, S1 States (Active)
1
1
0
5V
S3
VCLK (Pin 6)
1
0
1
Note
1
0
0
5V
1V8IN (Pin 2)
This pin is the output of the internal 2.5V clock chip regulator
(VOUT4). This internal regulator operates only in active
states (S0, S1/S2) and is shut off during any sleep state,
regardless of the configuration of the chip. This pin is
monitored for under-voltage events.
Description
Operation
The HIP6503 controls 5 output voltages (Refer to Figures 1,
2, and 3). It is designed for microprocessor computer
applications with 3.3V, 5V, 5VSB, and 12V bias input from an
ATX power supply. The IC is composed of three linear
controllers/regulators supplying the computer system’s
1.8VSB (VOUT1), 3.3VSB and PCI slots’ 3.3VAUX power
(VOUT3), the 2.5V RDRAM and 3.3V SDRAM memory
power (VOUT2), an integrated regulator dedicated to 2.5V
clock chip (VOUT4), a dual switch controller supplying the
5VDUAL voltage (VOUT5), as well as all the control and
monitoring functions necessary for complete ACPI
implementation.
COMMENTS
Maintains Previous State
Maintains Previous State
S4/S5
NOTE: Combination Not Allowed.
The internal circuitry does not allow the transition from an S3
(suspend to RAM) state to an S4/S5 (suspend to disk/soft
off) state or vice versa. The only ‘legal’ transitions are from
an active state (S0, S1) to a sleep state (S3, S5) and vice
versa.
Functional Timing Diagrams
Figures 4 through 6 are timing diagrams, detailing the power
up/down sequences of all three outputs in response to the
status of the enable (EN5VDL) and sleep-state pins (S3,
S5), as well as the status of the ATX supply.
5VSB
S3
S5
3.3V,
5V, 12V
Initialization
The HIP6503 automatically initializes upon receipt of input
power. The Power-On Reset (POR) function continually
monitors the 5VSB input supply voltage, initiating
3.3VDUAL/3.3VSB and 1.8VSB soft-start operation shortly
after exceeding POR threshold. At 3ms (typically) after these
two outputs finish their ramp-up, the EN5VDL and MSEL
status is latched in and the chip proceeds to ramp up the
remainder of the voltages, as required.
3V3DLSB
DLA
3V3DL
5VDLSB
5VDL
Operational Truth Table
The EN5VDL pin offers the choice of supporting or disabling
5VDUAL output in S3 and S4/S5 sleep states. Table 1
describes the truth combinations pertaining to this output.
FIGURE 4. 5VDUAL TIMING DIAGRAM FOR EN5VDL = 1;
3.3VDUAL/3.3VSB
The status of the EN5VDL pin can only be changed while in
active (S0, S1) states, when the bias supply (5VSB pin) is
below POR level, or during chip shutdown (SS pin shorted to
GND or within 3ms of 5VSB POR); a status change of this
pin while in a sleep state is ignored.
7
FN4882.5
July 21, 2005
HIP6503
proportional to the SS (soft-start) pin voltage. As the SS pin
voltage slews from about 1.25V to 2.5V, the input clamp
allows a rapid and controlled output voltage rise.
5VSB
S3
S5
3.3V,
5V, 12V
5VSB
(1V/DIV)
SOFT-START
(1V/DIV)
3V3DLSB
DLA
3V3DL
0V
5VDLSB
5VDL
VOUT5 (5VDUAL)
FIGURE 5. 5VDUAL TIMING DIAGRAM FOR EN5VDL = 0;
3VDUAL/3VSB
Not shown in these diagrams is the deglitching feature used
to protect against false sleep state tripping. Both S3 and S5
pins are protected against noise by a 2s filter (typically 1 4s). This feature is useful in noisy computer environments if
the control signals have to travel over significant distances.
Additionally, the S3 pin features a 200s delay in
transitioning to sleep states. Once the S3 pin goes low, an
internal timer is activated. At the end of the 200s interval, if
the S5 pin is low, the HIP6503 switches into S5 sleep state; if
the S5 pin is high, the HIP6503 goes into S3 sleep state.
5VSB
S3
S5
3.3V,
5V, 12V
INTERNAL
VSEN 2
DEVICES
DRV2
VSEN2
DLA
VSEN1
VCLK
FIGURE 6. 2.5VMEM, 3.3VMEM , AND 2.5VCLK TIMING DIAGRAM
Soft-Start Circuit
SOFT-START INTO SLEEP STATES (S3, S4/S5)
The 5VSB POR function initiates the soft-start sequence. An
internal 10A current source charges an external capacitor.
The error amplifiers reference inputs are clamped to a level
8
VOUT1 (1.8VSB)
VOUT3 (3.3VDUAL/3.3VSB)
OUTPUT
VOLTAGES
(1V/DIV)
VOUT2
(2.5VMEM)
VOUT4
(2.5VCLK)
0V
T0 T1 T2
T3
T4
TIME
T5
FIGURE 7. SOFT-START INTERVAL IN A SLEEP STATE
(ALL OUTPUTS ENABLED)
Figure 7 shows the soft-start sequence for the typical
application start-up in sleep state with all output voltages
enabled. At time T0 5VSB (bias) is applied to the circuit. At
time T1 the 5VSB surpasses POR level. An internal fast
charge circuit quickly raises the SS capacitor voltage to
approximately 1V, then the 10A current source continues
the charging. The soft-start capacitor voltage reaches
approximately 1.25V at time T2, at which point the
3.3VDUAL/3.3VSB and 1.8VSB error amplifiers’ reference
inputs start their transition, resulting in the output voltages
ramping up proportionally. The ramp-up continues until time
T3 when the two voltages reach the set value. As the softstart capacitor voltage reaches approximately 2.75V, the
under-voltage monitoring circuit of this output is activated
and the soft-start capacitor is quickly discharged to
approximately 1.25V. Following the 3ms (typical) time-out
between T3 and T4, the MSEL and EN5VDL selections are
latched in, and the soft-start capacitor commences a second
ramp-up designed to smoothly bring up the remainder of the
voltages required by the system. At time T5 all voltages are
within regulation limits, and as the SS voltage reaches
2.75V, all the remaining UV monitors are activated and the
SS capacitor is quickly discharged to 1.25V, where it
remains until the next transition. As the 2.5VCLK output is
only active while in an active state, it does not come up, but
FN4882.5
July 21, 2005
HIP6503
rather awaits until the main ATX outputs are well within
regulation limits.
SOFT-START INTO ACTIVE STATES (S0, S1)
If both S3 and S5 are logic high at the time the 5VSB is
applied, the HIP6503 will assume active state wake-up and
keep off the required outputs until some time (typically 25ms)
after the ATX’s main outputs used by the application (3.3V,
5V, and 12V) exceed the set thresholds. This time-out
feature is necessary in order to insure the main ATX outputs
are stabilized. The time-out also assures smooth transitions
from sleep into active when sleep states are being
supported. 3.3VDUAL/3.3VSB and 1.8VSB outputs, whose
operation is only dependent on 5VSB presence, will come up
right after bias voltage surpasses POR level.
+12VIN
DLA PIN
(2V/DIV)
INPUT VOLTAGES
(2V/DIV)
+5VIN
+5VSB
+3.3VIN
SOFT-START
(1V/DIV)
0V
OUTPUT
VOLTAGES
(1V/DIV)
VOUT5 (5VDUAL)
VOUT3 (3.3VDUAL/3.3VSB)
VOUT2, 4
(2.5VMEM, 2.5VCLK)
VOUT1 (1.8VSB)
0V
T0
T1
T2
T3
TIME
FIGURE 8. SOFT-START INTERVAL IN ACTIVE STATE
(2.5/3.3VMEM OUTPUT SHOWN IN 2.5V SETTING)
During sleep to active state transitions from conditions
where the outputs are initially 0V (such as S5 to S0 transition
on the 5VDUAL output with EN5VDL = 0, or simple power-up
sequence directly into active state), the memory (in 3.3V
setting) and 5VDUAL outputs go through a quasi soft-start by
being pulled high through the body diodes of the N-Channel
MOSFETs connected between these outputs and the 3.3V
and 5V ATX outputs. Figure 8 shows this start-up case,
exemplifying the 5VDUAL output.
5VSB is already present when the main ATX outputs are
turned on, at time T0. As a result of +5VIN ramping up, the
5VDUAL output capacitors charge up through the body diode
of Q5 (see Figure 3). At time T1, all main ATX outputs
exceed the HIP6503’s undervoltage thresholds, and the
9
internal 25ms (typical) timer is initiated. At T2 the time-out
initiates a soft-start, and the 2.5V memory and clock outputs
are ramped-up, reaching regulation limits at time T3.
Simultaneous with the beginning of the memory and clock
voltage ramp-up, at time T2, the DLA pin is pulled high,
turning on Q3 and Q5 in the process, and bringing the
5VDUAL output in regulation. Shortly after time T3, as the SS
voltage reaches 2.75V, the soft-start capacitor is quickly
discharged down to approximately 2.45V, where it remains
until a valid sleep state request is received from the system.
Fault Protection
All the outputs are monitored against undervoltage events. A
severe overcurrent caused by a failed load on any of the
outputs, would, in turn, cause that specific output to
suddenly drop. If any of the output voltages drops below
80% (typical) of their set value, such event is reported by
having the FAULT/MSEL pin pulled to 5V. Additionally,
exceeding the maximum current rating of an integrated
regulator (output with pass regulator on chip) can lead to
output voltage drooping; if excessive, this droop can
ultimately trip the under-voltage detector and send a FAULT
signal to the computer system.
A FAULT condition occurring on an output when controlled
through an external pass transistor will only set off the
FAULT flag, and it will not shut off or latch off any part of the
circuit. A FAULT condition occurring on an output when
controlled through an internal pass transistor, will set off the
FAULT flag, and it will shut off the respective faulting
regulator only. If shutdown or latch off of the entire circuit is
desired in case of a fault, regardless of the cause, this can
be achieved by externally pulling or latching the SS pin low.
Pulling the SS pin low will also force the FAULT pin to go low
and reset any internally latched-off output.
Special consideration is given to the initial start-up
sequence. If, following a 5VSB POR event, any of the
1.8VSB or 3.3VDUAL/3.3VSB outputs is ramped up and is
subject to an undervoltage event before the remainder of the
controlled voltages have been brought up, then the FAULT
output goes high and the entire IC latches off. Latch-off
condition can be reset by cycling the bias power (5VSB).
Undervoltage events on the 1.8VSB and the
3.3VDUAL/3.3VSB outputs at any other times are handled
according to the description found in the second paragraph
under the current heading.
Another condition that could set off the FAULT flag is chip
over-temperature. If the HIP6503 reaches an internal
temperature of 140°C (typical), the FAULT flag is set off, but
the chip continues to operate until the temperature reaches
155°C (typical), when unconditional shutdown of all outputs
takes place. Operation resumes at 140°C and the
temperature cycling occurs until the fault-causing condition
is removed.
FN4882.5
July 21, 2005
HIP6503
In HIP6503 applications, loss of any one active ATX output
(3.3VIN, 5VIN, or 12VIN; as detected by the on-board voltage
monitors) during active state operation causes the chip to
switch to S5 sleep state, in addition to reporting the input UV
condition on the FAULT/MSEL pin. Exiting from this forcedS5 state can only be achieved by returning the faulting input
voltage above its UV threshold, by resetting the chip through
removal of 5VSB bias voltage, or by bringing the SS pin at a
potential lower than 0.8V.
Output Voltages
The output voltages are internally set and do not require any
external components. Selection of the VMEM memory
voltage is done by means of an external resistor connected
between the FAULT/MSEL pin and ground. An internal 40A
(typical) current source creates a voltage drop across this
resistor. Following every 3.3VSB ramp-up or chip reset (see
Soft-Start Circuit), this voltage is compared with an internal
reference and the setting is latched in. Based on this
comparison, the output voltage is set at either 2.5V
(RSEL = 1k), or 3.3V (RSEL = 10k). It is very important
that no capacitor is connected to the FAULT/MSEL pin; the
presence of a capacitive element at this pin can lead to false
memory voltage selection. See Figure 9 for details.
RSEL
VMEM
1k
10k
2.5V
3.3V
5VSB
MEM VOLTAGE
SELECT COMP
+
-
+
RSEL
-
0.2V
FIGURE 9. 2.5/3.3VMEM OUTPUT VOLTAGE SELECTION
CIRCUITRY DETAILS
Application Guidelines
Soft-Start Interval
The 5VSB output of a typical ATX supply is capable of
725mA. During power-up in a sleep state, it needs to provide
sufficient current to charge up all the output capacitors and
simultaneously provide some amount of current to the output
loads. Drawing excessive amounts of current from the 5VSB
output of the ATX can lead to voltage collapse and induce a
pattern of consecutive restarts with unknown effects on the
system’s behavior or health.
The built-in soft-start circuitry allows tight control of the slewup speed of the output voltages controlled by the HIP6503,
thus enabling power-ups free of supply drop-off events.
Since the outputs are ramped up in a linear fashion, the
10
I SS
I COUT = ------------------------------    C OUT  V OUT  , where
C SS  V BG
ISS - soft-start current (typically 10A)
CSS - soft-start capacitor
VBG - bandgap voltage (typically 1.26V)
COUT x VOUT) - sum of the products between the
capacitance and the voltage of an output (total charge
delivered to all outputs)
Due to the various system timing events, it is recommended
that the soft-start interval not be set to exceed 30ms.
Shutdown
In case of a FAULT condition that might endanger the
computer system, or at any other time, all the HIP6503
outputs can be shut down by pulling the SS pin below the
specified shutdown level (typically 0.8V) with an open drain
or open collector device capable of sinking a minimum of
2mA. Pulling the SS pin low effectively shuts down all the
pass elements. Upon release of the SS pin, the HIP6503
undergoes a new soft-start cycle and resumes normal
operation in accordance to the ATX supply and control pins
status.
Layout Considerations
40A
FAULT/MSEL
current dedicated to charging the output capacitors can be
calculated with the following formula:
The typical application employing a HIP6503 is a fairly
straight forward implementation. Like with any other linear
regulator, attention has to be paid to the few potentially
sensitive small signal components, such as those connected
to sensitive nodes or those supplying critical by-pass
current.
The power components (pass transistors) and the controller
IC should be placed first. The controller should be placed in
a central position on the motherboard, closer to the memory
load if possible, but not excessively far from the clock chip or
the processor. Insure the 1V8SB, DRV2 and VSEN2
connections are properly sized to carry 250mA without
significant resistive losses; similar guideline applies to the
VCLK output, which can deliver as much as 800mA (typical).
As the current for the VCLK output is provided from the ATX
3.3V, the connection from the 3V3 pin to the 3.3V plane
should be sized to carry the maximum clock output current
while exhibiting negligible voltage losses. Similarly, the
5VSB and the 5V pins are carrying significant levels of
current - for best results, insure they are connected to their
respective sources through adequately sized traces. The
pass transistors should be placed on pads capable of
heatsinking matching the device’s power dissipation. Where
applicable, multiple via connections to a large internal plane
can significantly lower localized device temperature rise.
Placement of the decoupling and bulk capacitors should
follow a placement reflecting their purpose. As such, the
FN4882.5
July 21, 2005
HIP6503
high-frequency decoupling capacitors should be placed as
close as possible to the load they are decoupling; the ones
decoupling the controller close to the controller pins, the
ones decoupling the load close to the load connector or the
load itself (if embedded). Even though bulk capacitance
(aluminum electrolytics or tantalum capacitors) placement is
not as critical as the high-frequency capacitor placement,
having these capacitors close to the load they serve is
preferable.
The critical small signal components include the soft-start
capacitor, CSS, as well as the memory selection resistor,
RSEL. Locate these components close to the respective pins
of the control IC, and connect them to ground through a via
placed close to the ground pad. Minimize any leakage
current paths from these nodes, since the internal current
sources are only 10s of microamperes (10A to 40A).
+12VIN
+5VSB
5VSB
12V
SS
Q2
CHF5
CBULK5
LOAD
1V8SB
VOUT1
HIP6503
CHF3
3V3DL
VOUT2
Q3
3V3
CHF2
VSEN2
GND DRV2
Q1
CBULK4
CBULK2
CHF4
+3.3VIN
LOAD
Also, during the transition between active and sleep states,
there is a short interval of time during which none of the
power pass elements are conducting - during this time the
output capacitors have to supply all the output current. The
output voltage drop during this brief period of time can be
easily approximated with the following formula:
tt 

V OUT = I OUT   ESR OUT + ---------------- , where
C OUT

COUT - output capacitor bank capacitance
+5VIN
5V
VCLK
The output capacitors for all outputs should be selected to
allow the output voltage to meet the dynamic regulation
requirements of active state operation (S0, S1). The load
transient for the various microprocessor system’s
components may require high quality capacitors to supply
the high slew rate (di/dt) current demands. Thus, it is
recommended that the output capacitors be selected for
transient load regulation, paying attention to their parasitic
components (ESR, ESL).
IOUT - output current during transition
Q5
DLA
CBULK3
Output Capacitors Selection
ESROUT - output capacitor bank ESR
1V8IN
VOUT3
Component Selection Guidelines
VOUT - output voltage drop
3V3DLSB
LOAD
LOAD
VOUT5
5VDL
CBULK1
LOAD
Q4
5VDLSB
CSS
CHF1
CIN
C5VSB
C12V
plane should support both the input power and output power
nodes. Use copper filled polygons on the top and bottom
circuit layers to create power islands connecting the filtering
components (output capacitors) and the loads. Use the
remaining printed circuit layers for small signal wiring.
KEY
ISLAND ON POWER PLANE LAYER
ISLAND ON CIRCUIT/POWER PLANE LAYER
VIA CONNECTION TO GROUND PLANE
FIGURE 10. PRINTED CIRCUIT BOARD ISLANDS
tt - active-to-sleep or sleep-to-active transition time (10s typ.)
The output voltage drop is heavily dependent on the ESR
(equivalent series resistance) of the output capacitor bank,
the choice of capacitors should be such as to maintain the
output voltage above the lowest allowable regulation level.
VCLK (VOUT4) Output Capacitors Selection
The output capacitor for the VCLK linear regulator provides
loop stability. Figure 11 outlines a capacitance vs. equivalent
series resistance envelope. For stable operation and
optimized performance, select a COUT4 capacitor or
combination of capacitors with characteristics within the
shown envelope.
A multi-layer printed circuit board is recommended. Figure
10 shows the connections of most of the components in the
converter. Note that the individual capacitors shown each
could represent numerous physical capacitors. Dedicate one
solid layer for a ground plane and make all critical
component ground connections through vias placed as close
to the component terminal as possible. Dedicate another
solid layer as a power plane and break this plane into
smaller islands of common voltage levels. Ideally, the power
11
FN4882.5
July 21, 2005
HIP6503
Q2
10
The NPN transistor used as sleep state pass element (Q2)
on the 3.3VDUAL output has to have a minimum current gain
of 100 at 1.5V VCE and 500mA ICE throughout the in-circuit
operating temperature range.
1
ESR ()
Q3, 4, Q2 in 3.3VMEM configuration
These N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the 3.3VMEM,
3.3VDUAL/3.3VSB, and 5VDUAL outputs, while in active (S0,
S1) state. The main criteria for the selection of these
transistors is output voltage budgeting. The maximum
rDS(ON) allowed at highest junction temperature can be
expressed with the following equation:
0.1
0.01
10
100
CAPACITANCE (F)
1000
FIGURE 11. COUT4 OUTPUT CAPACITOR
V INmin – V OUTmin
r DS  ON max = --------------------------------------------------- , where
I OUTmax
VINmin - minimum input voltage
VOUTmin - minimum output voltage allowed
Input Capacitors Selection
IOUTmax - maximum output current
The input capacitors for an HIP6503 application have to
have a sufficiently low ESR as to not allow the input voltage
to dip excessively when energy is transferred to the output
capacitors. If the ATX supply does not meet the
specifications, certain imbalances between the ATX’s
outputs and the HIP6503’s regulation levels could have as a
result a brisk transfer of energy from the input capacitors to
the supplied outputs. At the transition between active and
sleep states, this phenomena could result in the 5VSB
voltage drooping excessively and affecting the output
regulation. The solution to a potential problem such as this is
using larger input capacitors with a lower total combined
ESR.
The gate bias available for these MOSFETs is of the order of
8V.
Transistor Selection/Considerations
Q5
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5VDUAL output during S3 and S5
states (as dictated by EN5VDL status), then the selection
criteria of this device is proper voltage budgeting. The
maximum rDS(ON) , however, has to be achieved with only
4.5V of VGS , so a logic level MOSFET needs to be selected.
If a PNP device is chosen to perform this function, it has to
have a low saturation voltage while providing the maximum
sleep current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA).
The HIP6503 usually requires one P-Channel (or bipolar
PNP), two N-Channel MOSFETs and two bipolar NPN
transistors.
One important criteria for selection of transistors for all the
linear regulators/switching elements is package selection for
efficient removal of heat. The power dissipated in a linear
regulator/switching element is
P LINEAR = I O   V IN – V OUT 
Select a package and heatsink that maintains the junction
temperature below the rating with the maximum expected
ambient temperature.
Q1
The active element on the 2.5VMEM output has to be a
bipolar NPN capable of conducting the maximum active
memory current and exhibit a current gain (hfe) of minimum
40 at this current and 0.7V VCE .
12
FN4882.5
July 21, 2005
HIP6503
+5VSB, +5V, and +12VDC ATX supply outputs. Q4 can also
be a PNP, such as an MMBT2907AL. For detailed
information on the circuit, including a Bill-of-Materials and
circuit board description, see Application Note AN9901.
HIP6503 Application Circuit
Figure 12 shows an application circuit of an
ACPI-sanctioned power management system for a
microprocessor computer system. The power supply
provides the 3.3VDUAL/3.3VSB voltage (VOUT3), the ICH2
resume well 1.8VSB voltage (VOUT1), the RDRAM 2.5VMEM
memory voltage (VOUT2), the 2.5VCLK clock voltage
(VOUT4), and the 5VDUAL voltage (VOUT5) from +3.3V,
Also see Intersil Corporation’s web page
(www.intersil.com) or call 1 888-INTERSIL for the latest
information.
+5VIN
+12VIN
+3.3VIN
+5VSB
+
C1
1F
C3
1F
12V
17
5V
VOUT1
1.8VSB
C5 +
1F
1V8SB
3.3VDUAL/3.3VSB
19
18
3V3DL
+
C10
330F
1V8IN
FAULT/MSEL
FAULT OUTPUT
S3
SLP_S3
S5
SLP_S5
SS
C15
0.1F
VSEN2
4
U1
6
VOUT2
2.5VMEM
C8
1F
VOUT4
VCLK
2.5VCLK
C11 +
150F
5
HIP6503
C12
1F
2
14
12
13
EN5VDL
Q1
2SC5001
C7 +
330F
R1
1K
CONFIGURATION
HARDWARE
DRV2
3
Q3
HUF76113T3S
C9
1F
1
20
3V3DLSB
C4
1F
5VSB
7
C6
150F
Q2
2SD1802
VOUT3
3V3
C2
1000F
Q4
FDV304P
5VDLSB
DLA
Q5
1/2 HUF76113DK8
8
15
9
+
10
16
VOUT5
5VDL
C13
150F
C14
1F
5VDUAL
11
GND
SHUTDOWN
(FROM OPEN-DRAIN N-MOS)
FIGURE 12. TYPICAL HIP6503 APPLICATION DIAGRAM
13
FN4882.5
July 21, 2005
HIP6503
Small Outline Plastic Packages (SOIC)
M20.3 (JEDEC MS-013-AC ISSUE C)
20 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE
N
INDEX
AREA
H
0.25(0.010) M
B M
INCHES
E
-B-
1
2
3
L
SEATING PLANE
-A-
A
D
h x 45°
-C-
e
A1
B
C
0.10(0.004)
0.25(0.010) M
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0926
0.1043
2.35
2.65
-
A1
0.0040
0.0118
0.10
0.30
-
B
0.014
0.019
0.35
0.49
9
C
0.0091
0.0125
0.23
0.32
-
D
0.4961
0.5118
12.60
13.00
3
E
0.2914
0.2992
7.40
7.60
4
e

B S
0.050 BSC
1.27 BSC
-
H
0.394
0.419
10.00
10.65
-
h
0.010
0.029
0.25
0.75
5
L
0.016
0.050
0.40
1.27
6
N

NOTES:
MILLIMETERS
20
0°
20
8°
0°
7
8°
1. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication Number 95.
Rev. 2 6/05
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch)
10. Controlling dimension: MILLIMETER. Converted inch
dimensions are not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9001 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
14
FN4882.5
July 21, 2005