IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S Available RoHS* COMPLIANT DESCRIPTION TO-220 FULLPAK Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. G D P-Channel MOSFET G D S ORDERING INFORMATION Package TO-220 FULLPAK IRFI9Z14GPbF SiHFI9Z14G-E3 IRFI9Z14G SiHFI9Z14G Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C Currenta Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque SYMBOL LIMIT VDS VGS - 60 ± 20 - 5.3 - 3.8 - 21 0.18 120 - 5.3 2.7 27 - 4.5 - 55 to + 175 300d 10 1.1 ID IDM TC = 25 °C for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). VDD = - 25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = - 5.3 A (see fig. 12). ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91170 S09-0062-Rev. A, 02-Feb-09 www.vishay.com 1 IRFI9Z14G, SiHFI9Z14G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 5.5 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = - 250 µA - 60 - - V ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.060 - V/°C VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - - - 100 VDS = - 48 VGS = 0 V, TJ = 150 °C - - - 500 - - 0.50 Ω 1.6 - - S - 270 - - 170 - - 31 - - 12 - Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = - 3.2 Ab VGS = - 10 V VDS = - 25 V, ID = - 3.2 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain to Sink Capacitance VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 C Total Gate Charge Qg Gate-Source Charge Qgs f = 1.0 MHz VGS = - 10 V ID = - 6.7 A, VDS = - 48 V, see fig. 6 and 13b - - 12 - - 3.8 Gate-Drain Charge Qgd - - 5.1 Turn-On Delay Time td(on) - 11 - - 63 - - 9.6 - - 31 - - 4.5 - - 7.5 - - - - 5.3 - - - 21 - - - 5 .5 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = - 30 V, ID = - 6.7 A, RG = 24 Ω, RD= 4.0 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 5.3 A, VGS = 0 Vb TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/µsb V - 80 160 ns - 0.096 0.19 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91170 S09-0062-Rev. A, 02-Feb-09 IRFI9Z14G, SiHFI9Z14G Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC= 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC= 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91170 S09-0062-Rev. A, 02-Feb-09 www.vishay.com 3 IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91170 S09-0062-Rev. A, 02-Feb-09 IRFI9Z14G, SiHFI9Z14G Vishay Siliconix RD VDS VGS D.U.T. RG +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) td(off) tf tr VGS 10 % 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS IAS VDS D.U.T. RG VDS + V DD VDD IAS tp - 10 V tp 0.01 Ω VDS Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91170 S09-0062-Rev. A, 02-Feb-09 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91170 S09-0062-Rev. A, 02-Feb-09 IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91170. Document Number: 91170 S09-0062-Rev. A, 02-Feb-09 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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