HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TA = 25°C (W) Micro3™ (SOT-23) Surface Mount N-Channel Fax-onDemand Logic Level IRLML2402* 20 0.25 0.93 0.74 370 340 91257 IRLML2803 30 0.25 0.91 0.73 370 340 91258 P-Channel Logic Level IRLML5103 -30 0.6 -0.6 -0.48 370 280 91260 IRLML6302* -20 0.6 -0.61 -0.49 370 280 91259 * Indicates low VGS(th), which can operate at VGS= 2.75V www.irf.com Page 1 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand Micro6™ Surface Mount N-Channel Logic Level IRLMS1503 30 0.1 2.2 1.8 160 780 91508 IRLMS1902* 20 0.1 2.2 1.8 160 780 91540 P-Channel Logic Level IRLMS5703 -30 0.2 -1.6 -1.3 75 780 91413 IRLMS6702* -20 0.2 -1.6 -1.3 160 780 91414 * Indicates low VGS(th), which can operate at VGS= 2.75V www.irf.com Page 2 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TA = 25°C (W) Fax-onDemand Micro8™ Surface Mount N-Channel Logic Level IRF7601* 20 0.035 3.8 3 160 780 91261 IRF7603 30 0.035 3.7 3 160 780 91262 Dual N-Channel Logic Level IRF7501* 20 0.135 1.7 1.4 200 625 91265 IRF7503 30 0.135 1.7 1.4 200 625 91266 P-Channel Logic Level IRF7604* -20 0.09 -2.4 -1.9 160 780 91263 IRF7606 -30 0.09 -2.4 -1.9 160 780 91264 Dual P-Channel Logic Level IRF7504* -20 0.27 -1.2 -0.96 200 625 91267 IRF7506 -30 0.27 -1.2 -0.96 200 625 91268 20 0.135 1.7 1.3 200 625 91269 -20 0.27 -1.2 -0.96 200 625 91269 30 0.135 1.7 1.3 200 625 91270 -30 0.27 -1.2 -0.96 200 625 91270 Dual N- and P-Channel IRF7507* IRF7509 Logic Level * Indicates low VGS(th), which can operate at VGS = 2.75V www.irf.com Page 3 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TA = 25°C (W) Fax-onDemand SO-8 Surface Mount N-Channel IRF7413 N-Channel 30 0.011 10 5.8 62.5 2 91330 Logic Level IRF7201 30 0.03 7 5.6 80 1.6 91100 IRF7401 20 0.022 6.9 5.5 80 1.6 91244 IRF7403 30 0.022 6.7 5.4 80 1.6 91245 Dual N-Channel Logic Level IRF7101 20 0.1 3.5 2.3 90 1.4 90871 IRF7103 50 0.13 3 2.3 90 1.4 91095 IRF7301 20 0.05 4.3 3.4 90 1.4 91238 IRF7303 30 0.05 4 3.2 90 1.4 91239 IRF7311 20 0.026 5.9 4.1 0.026 1.4 91435 IRF7313 30 0.029 6.5 5.2 62.5 2 91480 IRF9956 30 0.1 3.5 2.8 62.5 2 91559 P-Channel Logic Level IRF7204 -20 0.06 -5.3 -4.2 80 1.6 91103 IRF7205 -30 0.07 -4.6 -3.7 80 1.6 91104 IRF7404 -20 0.04 -5.3 -4.3 80 1.6 91246 IRF7406 -30 0.045 -4.7 -3.8 80 1.6 91247 IRF7416 -30 0.02 -8.8 -5.6 50 1 91356 www.irf.com Page 4 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TA = 25°C (W) Fax-onDemand SO-8 Surface Mount Dual P-Channel Logic Level IRF7104 -20 0.25 -2.3 -1.8 90 1.4 91096 IRF7304 -20 0.09 -3.6 -2.9 90 1.4 91240 IRF7306 -30 0.1 -3 -2.4 90 1.4 91241 IRF7314 -20 0.053 -4.2 -2.9 190 1.4 91435 IRF7316 -30 0.058 -4.9 -3.9 62.5 2 91505 IRF9953 -30 0.25 -2.3 -1.8 62.5 2 91560 25 0.1 3.5 2.8 90 1.4 91097 -20 0.27 -1.2 -0.96 200 625 91097 20 0.05 4.3 3.4 90 1.4 91242 -20 0.09 -4 -2.9 90 1.4 91242 30 0.05 4 3.2 90 1.4 91243 -30 0.1 -3.5 -2.4 90 1.4 91243 30 0.1 3.5 2.8 62.5 2 91562 -30 0.25 -2.3 -1.8 62.5 2 91562 Dual N- and P-Channel IRF7105 IRF7307 IRF7309 IRF9952 www.irf.com Logic Level Page 5 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) VFM P Max. D Forward Power Dissipation @ TC = 25°C Voltage Drop @ Tj = 25°C (W) FETKY™ SO-8 Surface Mount N-Channel Fax-onDemand FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode) IRF7421D1 30 0.035 4.1 3.3 50 2.5 0.50V @ 1.0A 91411 IRF7422D2 -20 0.09 -2.9 -2.3 50 2.5 0.57V @ 3.0A 91412 www.irf.com Page 6 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ A Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand SOT-223 (TO-261AA) Surface Mount N-Channel IRFL014 60 0.2 2.7 1.7 60 2 90860 IRFL110 100 0.54 1.5 0.96 60 2 90861 IRFL210 200 1.5 0.96 0.6 60 2 90868 IRFL214 250 2 0.79 0.5 60 2 90862 IRFL4105 55 0.045 3.7 60 2.1 91381 IRFL4310 100 0.2 1.6 60 2.1 91368 55 0.14 2.8 1.6 60 2.1 91499 IRLL110 100 0.54 1.5 0.93 40 3.1 90869 IRLL2705 55 0.04 5.2 3 60 2.1 91380 IRLL3303 30 0.031 6.5 3.7 60 2.1 91379 IRFL9014 -60 0.5 -1.8 -1.1 60 2 90863 IRFL9110 -100 1.2 -1.1 -0.69 60 2 90864 N-Channel IRLL014N Logic Level P-Channel www.irf.com Page 7 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-252AA (D-Pak) Surface Mount N-Channel IRFR014 60 0.2 7.7 4.9 5 25 90701 IRFR024N 55 0.075 16 10 3.3 38 91336 IRFR110 100 0.54 4.3 2.7 5 25 90524 IRFR1205 55 0.027 37 23 1.8 69 91318 IRFR120N 100 0.21 9.1 5.8 3.2 39 91365 IRFR210 200 1.5 2.6 1.7 5 25 90526 IRFR214 250 2 2.2 1.4 5 25 90703 IRFR220 200 0.8 4.8 3 3 42 90525 IRFR224 250 1.1 3.8 2.4 3 42 90600 IRFR310 400 3.6 1.7 1.1 5 25 90597 IRFR320 400 1.8 3.1 2 3 42 90598 IRFR3910 100 0.11 15 9.5 2.4 52 91364 IRFR4105 55 0.045 25 16 2.7 48 91302 IRFR420 500 3 2.4 1.5 3 42 90599 IRFRC20 600 4.4 2 1.3 3 42 90637 N-Channel Logic Level IRLR014 60 0.2 7.7 4.9 5 25 90624 IRLR024N 55 0.065 17 11 3.3 38 91363 IRLR110 100 0.54 4.3 2.7 5 25 90633 IRLR120 100 0.27 7.7 4.9 3 42 90636 www.irf.com Page 8 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-252AA (D-Pak) Surface Mount IRLR2703 30 0.045 22 14 3.3 38 91335 IRLR2905 55 0.027 36 23 1.8 69 91334 IRLR3103 30 0.019 46 29 1.8 69 91333 IRFR9014 -60 0.5 -5.1 -3.2 5 25 90654 IRFR9024 -60 0.28 -8.8 -5.6 3 42 90655 IRFR9110 -100 1.2 -3.1 -2 5 25 90519 IRFR9120 -100 0.6 -5.6 -3.6 3 42 90520 IRFR9210 -200 3 -1.9 -1.2 5 25 90521 IRFR9220 -200 1.5 -3.6 -2.3 3 42 90522 0.04 24 15 2.7 46 91317 P-Channel P-Channel IRLR2705 www.irf.com Logic Level 55 Page 9 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-251AA (I-Pak) Discrete N-Channel IRFU014 60 0.2 7.7 4.9 5 25 90701 IRFU024N 55 0.075 16 10 3.3 38 91336 IRFU110 100 0.54 4.3 2.7 5 25 90524 IRFU1205 55 0.027 37 23 1.8 69 91318 IRFU120N 100 0.21 9.1 5.8 3.2 39 91365 IRFU210 200 1.5 2.6 1.7 5 25 90526 IRFU214 250 2 2.2 1.4 5 25 90703 IRFU220 200 0.8 4.8 3 3 42 90525 IRFU224 250 1.1 3.8 2.4 3 42 90600 IRFU310 400 3.6 1.7 1.1 5 25 90597 IRFU320 400 1.8 3.1 2 3 42 90598 IRFU3910 100 0.11 15 9.5 2.4 52 91364 IRFU4105 55 0.045 25 19 2.7 48 91302 IRFU420 500 3 2.4 1.5 3 42 90599 IRFUC20 600 4.4 2 1.3 3 42 90637 N-Channel Logic Level IRLU014 60 0.2 7.7 4.9 5 25 90624 IRLU024N 55 0.065 17 11 3.3 38 91363 IRLU110 100 0.54 4.3 2.7 5 25 90633 IRLU120 100 0.27 7.7 4.9 3 42 90636 www.irf.com Page 10 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-251AA (I-Pak) Discrete IRLU2703 30 0.045 22 14 3.3 38 91335 IRLU2705 55 0.04 24 0 15 46 91317 IRLU2905 55 0.027 36 23 1.8 69 91334 IRLU3103 30 0.019 46 29 1.8 69 91333 -60 0.5 -5.1 -3.2 5 25 90654 IRFU9024 -60 0.28 -8.8 -5.6 3 42 90655 IRFU9110 -100 1.2 -3.1 -2 5 25 90519 IRFU9120 -100 0.6 -5.6 -3.6 3 42 90520 IRFU9210 -200 3 -1.9 -1.2 5 25 90521 IRFU9220 -200 1.5 -3.6 -2.3 3 42 90522 P-Channel IRFU9014 www.irf.com Page 11 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand HEXDIP (HD-1) Discrete N-Channel IRFD014 60 0.2 1.7 1.2 120 1.3 90700 IRFD024 60 0.1 2.5 1.8 120 1.3 90699 IRFD110 100 0.54 1 0.71 120 1.3 90328 IRFD120 100 0.27 1.3 0.94 120 1.3 90385 IRFD210 200 1.5 0.6 0.38 120 1.3 90386 IRFD214 250 2 0.57 0.32 120 1.3 91271 IRFD220 200 0.8 0.8 0.5 120 1.3 90417 IRFD224 250 1.1 0.76 0.43 120 1.3 91272 IRFD310 400 3.6 0.42 0.23 120 1.3 91225 IRFD320 400 1.8 0.6 0.33 120 1.3 91226 IRFD420 500 3 0.46 0.26 120 1.3 91227 IRFDC20 600 4.4 0.32 0.21 120 1.3 91228 N-Channel Logic Level IRLD014 60 0.2 1.7 1.2 120 1.3 90628 IRLD024 60 0.1 2.5 1.8 120 1.3 90629 IRLD110 100 0.54 1 0.7 120 1.3 90635 IRLD120 100 0.27 1.3 0.94 120 1.3 90634 IRFD9014 -60 0.5 -1.1 -0.8 120 1.3 90696 IRFD9024 -60 0.28 -1.6 -1.1 120 1.3 90698 P-Channel www.irf.com Page 12 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand HEXDIP (HD-1) Discrete IRFD9110 -100 1.2 -0.7 -0.49 120 1.3 90389 IRFD9120 -100 0.6 -1 -0.7 120 1.3 90331 IRFD9210 -200 3 -0.4 -0.25 120 1.3 90387 IRFD9220 -200 1.5 -0.56 -0.36 120 1.3 90439 www.irf.com Page 13 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand D2Pak Surface Mount N-Channel IRL3103D1S FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode) 30 0.014 54 34 1.8 3.1 91558 IRF1010NS 55 0.012 72 51 1.2 3.8 91372 IRF1310NS 100 0.036 36 25 1.3 120 91514 IRF3205S 55 0.008 98 69 1 150 91304 IRF3415S 150 0.042 37 26 1 150 91509 IRF3710S 100 0.028 46 33 1 150 91310 IRF510S 100 0.54 5.6 4 3.5 43 90895 IRF520NS 100 0.2 9.5 6.7 3.2 47 91340 IRF530NS 100 0.11 15 11 2.4 63 91352 IRF530S 100 0.16 14 10 1.7 88 90897 IRF540NS 100 0.052 27 19 1.6 110 91342 IRF540S 100 0.077 28 20 1 150 90898 IRF610S 200 1.5 3.3 2.1 3.5 36 90899 IRF614S 250 2 2.7 1.7 3.5 36 91003 IRF620S 200 0.8 5.2 3.3 2.5 50 90900 N-Channel IRF624S 250 1.1 4.4 2.8 2.5 50 91004 IRF630S 200 0.4 9 5.7 1.7 74 90901 IRF634S 250 0.45 8.1 5.1 1.7 74 91005 IRF640S 200 0.18 18 11 1 125 90902 www.irf.com Page 14 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand D2Pak Surface Mount IRF644S 250 0.28 14 8.5 1 125 91006 IRF710S 400 3.6 2 1.2 3.5 36 91007 IRF720S 400 1.8 3.3 2.1 2.5 50 91008 IRF730S 400 1 5.5 3.3 1.7 74 91009 IRF740S 400 0.55 10 6.3 1 125 91010 IRF820S 500 3 2.5 1.6 2.5 50 91011 IRF830S 500 1.5 4.5 2.9 1.7 74 91012 IRF840S 500 0.85 8 5.1 1 125 91013 IRFZ14S 60 0.2 10 7.2 3.5 43 90890 IRFZ24NS 55 0.07 17 12 3.3 45 91355 IRFZ24S 60 0.1 17 12 2.5 60 90891 IRFZ34NS 55 0.04 26 18 2.7 56 91311 IRFZ34S 60 0.05 30 21 1.7 88 90892 IRFZ44N 55 0.024 41 29 1.8 83 91303 IRFZ44NS 60 0.028 50 36 1 150 91315 IRFZ44S 60 0.028 50 36 1 150 90893 IRFZ46NS 55 0.02 46 33 1.7 88 91305 IRFZ46S 50 0.024 50 38 1 150 90922 IRFZ48NS 60 0.016 53 37 1.6 3.8 91408 IRFZ48S 60 0.018 50 50 0.8 190 90894 IRL2505S 55 0.008 90 64 1 2.1 91326 IRL2703S 30 0.04 24 17 3.3 130 91360 www.irf.com Page 15 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand D2Pak Surface Mount IRL530NS 100 0.1 15 11 2.4 63 91349 IRL620S 200 0.8 5.2 3.3 2.5 50 91218 N-Channel Logic Level IRL2203NS 30 0.007 100 71 1.2 130 91367 IRL3103S 30 0.014 56 40 1.8 83 91338 IRL3303S 30 0.026 34 24 2.7 56 91323 IRL3705NS 55 0.01 77 54 1.2 3.8 91502 IRL3803S 30 0.006 120 83 1 150 91319 IRL510S 100 0.54 5.6 4 3.5 43 90907 IRL520S 100 0.27 9.2 6.5 2.5 60 90896 IRL530S 100 0.16 15 10 1.7 88 90909 IRLZ14S 60 0.2 10 7.2 3.5 43 90903 IRLZ24NS 55 0.06 18 13 3.3 45 91358 IRLZ24S 60 0.1 17 12 2.5 60 90904 IRLZ34NS 55 0.035 27 19 2.7 56 91308 IRLZ34S 60 0.05 30 21 1.7 88 90905 IRLZ44NS 55 0.022 41 29 1.8 83 91347 IRLZ44S 60 0.028 50 36 1 150 90906 IRF4905S -55 0.02 -64 -45 1 150 91478 IRF5210S -100 0.06 -35 -25 1 150 91405 P-Channel www.irf.com Page 16 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand D2Pak Surface Mount IRF9510S -100 1.2 -4 -2.8 3.5 43 90914 IRF9520S -100 0.6 -6.8 -4.8 2.5 60 90915 IRF9530S -100 0.3 -12 -8.2 1.7 88 90916 IRF9540S -100 0.2 -19 -13 1 150 90917 IRF9610S -200 3 -1.8 -1 6.4 20 90918 IRF9620S -200 1.5 -2.5 -2 3.1 40 90919 IRF9630S -200 0.8 -6.5 -4 1.7 74 90920 IRF9640S -200 0.5 -11 -6.8 1 125 90921 IRF9Z14S -60 0.5 -6.7 -4.7 3.5 43 90911 www.irf.com Page 17 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Q Total Drain Current 0 (nC) Rθ C Max Thermal Resistance (°C/W) Qg Total Gate P Max. D Power Dissipation Charge (nC) @ TC = 25°C (W) Fax-onDemand TO-220AB Discrete N-Channel Low Charge IRF737LC 300 0.75 6.1 1.7 74 3.9 91314 IRF740LC 400 0.55 10 1 125 39 91068 IRF840LC 500 0.85 8 1 125 39 91069 IRFBC40LC 600 1.2 6.2 1 125 39 91070 www.irf.com Page 18 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-220AB Discrete N-Channel IRL3103D1 FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode) 30 0.014 54 34 1.8 2 91608 IRF1010N 55 0.012 72 51 1.2 130 91278 IRF1310N 100 0.036 36 25 1.3 120 91611 IRF3205 55 0.008 98 69 1 150 91279 IRF3415 150 0.042 37 26 1 150 91477 N-Channel IRF3710 100 0.028 46 33 1 150 91309 IRF510 100 0.54 5.6 4 3.5 43 90325 IRF520N 100 0.2 9.5 6.7 9.5 47 91339 IRF530N 100 0.11 15 11 2.4 60 91351 IRF540N 100 0.052 27 19 1.6 94 91341 IRF610 200 1.5 3.3 2.1 3.5 36 90326 IRF614 250 2 2.7 1.7 3.5 36 90475 IRF620 200 0.8 5.2 3.3 2.5 50 90317 IRF624 250 1.1 4.4 2.8 2.5 50 90472 IRF630 200 0.4 9 5.7 1.7 74 90309 IRF634 250 0.45 8.1 5.1 1.7 74 90476 IRF640 200 0.18 18 11 1 125 90374 IRF644 250 0.28 14 8.5 1 125 90527 IRF710 400 3.6 2 1.2 3.5 36 90327 www.irf.com Page 19 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-220AB Discrete IRF720 400 1.8 3.3 2.1 2.5 50 90315 IRF730 400 1 5.5 3.3 1.7 74 90308 IRF734 450 1.2 4.9 3.1 1.7 74 90999 IRF740 400 0.55 10 6.3 1 125 90375 IRF744 450 0.63 8.8 5.6 1 125 91000 IRF820 500 3 2.5 1.6 2.5 50 90324 IRF830 500 1.5 4.5 2.9 1.7 74 90311 IRF840 500 0.85 8 5.1 1 125 90376 IRFBC20 600 4.4 2.2 1.4 2.5 50 90623 IRFBC30 600 2.2 3.6 2.3 1.7 74 90482 IRFBC40 600 1.2 6.2 3.9 1 125 90506 IRFBE20 800 6.5 1.8 1.2 2.3 54 90610 IRFBE30 800 3 4.1 2.6 2 125 90613 IRFBF20 900 8 1.7 1.1 2.3 54 90607 IRFBF30 900 3.7 3.6 2.3 1 125 90616 IRFBG20 1000 11 1.4 0.86 2.3 54 90604 IRFBG30 1000 5 3.1 2 1 125 90620 IRFZ14 60 0.2 10 7.2 3.5 43 90507 IRFZ24N 55 0.07 17 12 3.3 45 91354 IRFZ34N 55 0.04 26 18 2.7 56 91276 IRFZ46N 55 0.02 46 33 1.7 88 91277 IRFZ48N 55 0.016 53 37 1.6 94 91406 www.irf.com Page 20 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-220AB Discrete N-Channel Logic Level IRL2203N 30 0.007 100 71 1.2 130 91366 IRL3103 30 0.014 56 40 1.8 83 91337 IRL3303 30 0.026 34 24 2.7 56 91322 IRL3705N 55 0.01 77 54 1.2 130 91370 IRL3803 30 0.006 120 83 1 150 91301 IRL520N 100 3.2 10 7.1 3.2 47 91494 IRL530N 100 0.1 15 11 2.4 63 91348 IRL540N 100 0.044 30 21 1.6 94 91495 IRL640 200 0.18 17 11 1 125 91089 IRLI2203N 30 0.007 61 43 3.2 47 91378 IRLZ14 60 0.2 10 7.2 3.5 43 90556 IRLZ24N 55 0.06 18 13 3.3 45 91357 IRLZ34N 55 0.035 27 19 2.7 56 91307 IRLZ44N 55 0.022 41 29 1.8 83 91346 IRF4905 -55 0.02 -64 -45 1 150 91280 IRF9510 -100 1.2 -4 -2.8 3.5 43 90390 IRF9520 -100 0.6 -6.8 -4.8 2.5 60 90319 IRF9530N -100 0.2 -13 -9.2 2 75 91482 IRF9540N -100 0.117 -19 -13 1.6 94 91437 P-Channel www.irf.com Page 21 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-220AB Discrete IRF9610 -200 3 -1.8 -1 6.4 20 90350 IRF9620 -200 1.5 -2.5 -2 3.1 40 90351 IRF9630 -200 0.8 -6.5 -4 1.7 74 90352 IRF9640 -200 0.5 -11 -6.8 1 125 90422 IRF9Z14 -60 0.5 -6.7 -4.7 3.5 43 90736 IRF9Z24N -55 0.175 -12 -8.5 3.3 45 91484 IRF9Z34N -55 0.1 -17 -12 2.7 56 92001 www.irf.com Page 22 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Q Total Drain Current 0 (nC) Rθ C Max Thermal Resistance (°C/W) Qg Total Gate P Max. D Power Dissipation Charge (nC) @ TC = 25°C (W) TO-220 FullPak Fully Isolated N-Channel Fax-onDemand Low Charge IRFI740GLC 400 0.55 6 3.1 40 39 91209 IRFI840GLC 500 0.85 4.8 3.1 40 39 91208 IRFIBC40GLC 600 1.2 4 3.1 40 39 91211 www.irf.com Page 23 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-220 Full-Pak Fully Isolated N-Channel IRFI1010N 55 0.012 44 31 3.2 47 91373 IRFI1310N 100 0.036 22 16 3.3 45 91611 IRFI3205 55 0.008 56 40 3.1 48 91374 IRFI510G 100 0.54 4.5 3.2 5.5 27 90829 IRFI520N 100 0.2 7.2 5.1 5.5 27 91362 IRFI530N 100 0.11 11 7.8 4.5 33 91353 IRFI540N 100 0.052 18 13 3.6 42 91361 IRFI614G 250 2 2.1 1.3 5.5 23 90831 IRFI620G 200 0.8 4.1 2.6 4.1 30 90832 IRFI624G 250 1.1 3.4 2.2 4.1 30 90833 IRFI630G 200 0.4 5.9 3.7 3.6 32 90652 IRFI634G 250 0.45 5.6 3.5 3.6 32 90738 IRFI640G 200 0.18 9.8 6.2 3.1 40 90649 IRFI644G 250 0.28 7.9 5 3.1 40 90739 IRFI720G 400 1.8 2.6 1.7 4.1 30 90834 IRFI730G 400 1 3.7 2.3 3.6 32 90650 IRFI734G 450 1.2 3.4 2.1 3.6 35 91001 IRFI740G 400 0.55 5.4 3.4 3.1 40 90651 IRFI744G 450 0.63 4.9 3.1 3.1 40 91002 IRFI820G 500 3 2.1 1.3 4.1 30 90641 www.irf.com Page 24 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-220 FullPak Fully Isolated IRFI830G 500 1.5 3.1 2 3.6 32 90646 IRFI840G 500 0.85 4.6 2.9 3.1 40 90642 IRFIBC20G 600 4.4 1.7 1.1 4.1 30 90850 IRFIBC30G 600 2.2 2.5 1.6 3.6 35 90851 IRFIBC40G 600 1.2 3.5 2.2 3.1 40 90852 IRFIBE20G 800 6.5 1.4 0.86 4.1 30 90853 IRFIBE30G 800 3 2.1 1.4 3.6 35 90854 IRFIBF20G 900 8 1.2 0.79 4.1 30 90855 IRFIBF30G 900 3.7 1.9 1.2 3.6 35 90856 IRFIZ14G 60 0.2 8 5.7 5.5 27 90859 IRFIZ24N 55 0.07 13 9.2 5.8 26 91501 IRFIZ34N 55 0.04 19 13 4.8 31 91489 IRFIZ44N 55 0.024 28 20 0.024 38 91403 IRFIZ46N 55 0.02 31 22 3.8 40 91306 IRFIZ48N 55 0.016 36 25 3.6 42 91407 N-Channel Logic Level IRLI3705N 55 0.01 47 33 3.2 47 91369 IRLI3803 30 0.006 67 47 3.1 48 91320 IRLI520N 100 0.18 7.7 5.4 5.5 27 91496 IRLI530G 100 0.16 9.7 6.9 3.6 42 90844 IRLI540N 100 0.044 20 14 3.6 42 91497 www.irf.com Page 25 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-220 FullPak Fully Isolated IRLI620G 200 0.8 4.1 2.6 4.1 30 91235 IRLI630G 200 0.4 5.9 3.7 3.6 32 91236 IRLI640G 200 0.18 9.8 6.2 3.1 40 91237 IRLIZ14G 60 0.2 8 5.7 5.5 27 90846 IRLIZ24G 60 0.1 14 10 4.1 37 90847 IRLIZ24N 55 0.06 14 9.9 5.8 26 91344 IRLIZ34N 55 0.035 20 14 4.8 31 91329 IRLIZ44N 55 0.022 28 20 4 38 91498 IRFI9540G -100 0.117 -13 -9.2 3.6 42 90837 IRFI9540N -100 0.117 -13 -9.2 3.6 42 91487 IRFI9634G -250 1 -4.1 -2.6 3.6 35 91488 P-Channel P-Channel Logic Level IRFI9520G -100 0.6 -5.2 -3.6 4.1 37 90835 IRFI9530G -100 0.03 -7.7 -5.4 3.6 38 90836 IRFI9620G -200 1.5 -3 -1.9 4.1 30 90874 IRFI9630G -200 0.8 -4.3 -2.7 3.6 40 90838 IRFI9640G -200 0.5 -6.1 -3.9 3.1 40 90839 IRFI9Z14G -60 0.5 -5.3 -3.8 5.5 27 90840 IRFI9Z24G -60 0.285 -8.5 -6 4.1 37 90841 IRFI9Z34G -60 0.14 -12 8.5 3.6 38 90842 www.irf.com Page 26 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Nominal Sense Number Fax-onDemand TO-220 Hexsense HEXSENSE N-Channel IRC530 100 0.16 14 10 1.7 88 1540 90454 IRC540 100 0.077 28 20 1 150 2810 90592 IRC630 200 0.4 9 5.7 1.7 74 1570 90565 IRC634 250 0.45 8.1 5.1 1.7 74 1580 90566 IRC640 200 0.18 18 11 1 125 2880 90568 IRC644 250 0.28 14 8.5 1 125 2900 90569 IRC730 400 1 5.5 3.5 1 74 1600 90567 IRC740 400 0.55 10 6.3 1 125 2940 90570 IRC830 500 1.5 4.5 3 1.7 74 1600 90455 IRC840 500 0.85 8 5.1 1 125 2970 90593 IRCZ24 60 0.1 17 12 2.5 60 820 90615 IRCZ34 60 0.05 30 21 1.7 88 1480 90590 IRCZ44 60 0.028 50 37 1 150 2720 90529 www.irf.com Page 28 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Drain Current Rθ C Max Thermal Resistance (°C/W) Qg Total Gate P Max. D Power Dissipation Charge (nC) @ TC = 25°C (W) Fax-onDemand TO-247AC Discrete N-Channel Low Charge IRFP350LC 400 0.3 18 0.65 190 70 91229 IRFP360LC 400 0.2 23 0.45 280 98 91230 IRFP450LC 500 0.4 16 0.65 190 70 91231 IRFP460LC 500 0.27 20 0.45 280 98 91232 IRFPC50LC 600 0.6 13 0.65 190 70 91233 IRFPC60LC 600 0.4 16 0.45 280 98 91234 www.irf.com Page 29 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-247AC Discrete N-Channel IRFP044N 55 0.02 49 35 1.5 100 91410 IRFP048N 55 0.016 62 44 1.2 130 91409 IRFP054N 55 0.012 72 51 1.2 130 91382 IRFP064N 55 0.008 98 69 1 150 91383 IRFP140N 100 0.052 27 19 1.6 94 91343 IRFP150N 100 0.036 39 28 1.1 140 91503 IRFP240 200 0.18 20 12 0.83 150 90444 IRFP244 250 0.28 15 9.7 0.83 150 90588 IRFP250 200 0.085 30 19 0.65 190 90443 IRFP254 250 0.14 23 15 0.65 190 90540 IRFP260 200 0.055 46 29 0.45 280 90755 IRFP264 250 0.075 38 24 0.45 280 90756 IRFP340 400 0.55 11 6.9 0.83 150 90456 IRFP344 450 0.63 9.5 6 0.83 150 90998 IRFP350 400 0.3 16 10 0.65 190 90445 IRFP354 450 0.35 14 9.1 0.65 190 90995 IRFP360 400 0.2 23 14 0.45 280 90586 IRFP3710 100 0.028 51 36 0.83 180 91490 IRFP440 500 0.85 8.8 5.6 0.83 150 90457 IRFP448 500 0.6 11 6.6 0.7 180 90595 www.irf.com Page 30 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation @ TC = 25°C (W) Fax-onDemand TO-247AC Discrete IRFP450 500 0.4 14 8.7 0.65 190 90458 IRFP460 500 0.27 20 13 0.45 280 90512 IRFPC30 600 2.2 4.3 2.7 1.2 100 90596 IRFPC40 600 1.2 6.8 4.3 0.83 150 90511 IRFPC48 600 0.82 8.9 5.6 0.73 170 90996 IRFPC50 600 0.6 11 7 0.65 180 90656 IRFPC60 600 0.4 16 10 0.45 280 90870 IRFPE30 800 3 4.1 2.6 1 125 90612 IRFPE40 800 2 5.4 3.4 0.83 150 90578 IRFPE50 800 1.2 7.8 4.9 0.65 190 90573 IRFPF30 900 3.7 3.6 2.3 1 125 90618 IRFPF40 900 2.5 4.7 2.9 0.83 150 90580 IRFPF50 900 1.6 6.7 4.2 0.65 190 90542 IRFPG30 1000 5 3.1 2 1 125 90621 IRFPG40 1000 3.5 4.3 2.7 0.83 150 90576 IRFPG50 1000 2 6.1 3.9 0.65 190 90543 IRFP9140 -100 0.2 -21 -15 0.83 180 90480 IRFP9240 -200 0.5 -12 -7.5 0.83 150 90481 P-Channel www.irf.com Page 31 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID M Pulse Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation (W) TO-240AA HEX-Pak Module N-Channel Parallel Chip IRFK4H054 60 0.005 150 960 0.25 500 IRFK4H150 100 0.014 145 580 0.25 500 IRFK4H250 200 0.021 108 432 0.25 500 IRFK4H350 400 0.075 50 200 0.25 500 IRFK4H450 500 0.1 44 176 0.25 500 IRFK4HC50 600 0.175 35 140 0.25 500 IRFK4HE50 800 0.3 26 104 0.25 500 IRFK4J054 60 0.005 150 960 0.25 500 IRFK4J150 100 0.014 145 580 0.25 500 IRFK4J250 200 0.021 108 432 0.25 500 IRFK4J350 400 0.075 50 200 0.25 500 IRFK4J450 500 0.1 44 176 0.25 500 IRFK4JC50 600 0.175 35 140 0.25 500 IRFK4JE50 800 0.3 26 104 0.25 500 IRFK6H054 60 0.003 350 1400 0.2 625 IRFK6H150 100 0.01 150 720 0.2 625 IRFK6H250 200 0.015 140 560 0.2 625 IRFK6H350 400 0.05 75 300 0.2 625 IRFK6H450 500 0.067 66 264 0.2 625 IRFK6HC50 600 0.1 48 192 0.2 625 www.irf.com Fax-onDemand Page 32 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID M Pulse Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation (W) TO-240AA HEX-Pak Module IRFK6J054 60 0.003 350 1400 0.2 625 IRFK6J150 100 0.01 150 720 0.2 625 IRFK6J250 200 0.015 140 560 0.2 625 IRFK6J350 400 0.05 75 300 0.2 625 IRFK6J450 500 0.067 66 264 0.2 625 IRFK6JC50 600 0.1 48 192 0.2 625 www.irf.com Fax-onDemand Page 33 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID M Pulse Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation (W) TO-240AA HEX-Pak Module N-Channel Half Bridge IRFK2D054 60 0.01 120 480 0.25 500 IRFK2D150 100 0.028 72 288 0.25 500 IRFK2D250 200 0.043 54 216 0.25 500 IRFK2D350 400 0.15 25 100 0.25 500 IRFK2D450 500 0.2 22 88 0.25 500 IRFK2DC50 600 0.35 18 72 0.25 500 IRFK2DE50 800 0.6 12 48 0.25 500 IRFK2F054 60 0.01 120 480 0.25 500 IRFK2F150 100 0.028 72 288 0.25 500 IRFK2F250 200 0.043 54 216 0.25 500 IRFK2F350 400 0.15 25 100 0.25 500 IRFK2F450 500 0.2 22 88 0.25 500 IRFK2FC50 600 0.35 18 72 0.25 500 IRFK2FE50 800 0.6 12 48 0.25 500 IRFK3D150 100 0.02 125 435 0.2 625 IRFK3D250 200 0.03 70 280 0.2 625 IRFK3D350 400 0.1 37 148 0.2 625 IRFK3D450 500 0.135 33 132 0.2 625 IRFK3DC50 600 0.23 24 96 0.2 625 IRFK3F150 100 0.02 125 435 0.2 625 www.irf.com Fax-onDemand Page 34 HEXFET® Power MOSFETs Part Number International Rectifier ID R DS(on) V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID M Pulse Drain Current 100°C (A) Rθ C Max Thermal Resistance (°C/W) P Max. D Power Dissipation (W) TO-240AA HEX-Pak Module IRFK3F250 200 0.03 70 280 0.2 625 IRFK3F350 400 0.1 37 148 0.2 625 IRFK3F450 500 0.135 33 132 0.2 625 IRFK3FC50 600 0.23 24 96 0.2 625 www.irf.com Fax-onDemand Page 35