Teccor® brand Thyristors
Silicon Controlled Rectifiers
SxX8xSx EV Series 0.8A Sensitive SCR
Description
New device series offers high static dv/dt and lower turn
off (tq) sensitive SCR with its small die planar construction
EFTJHO*UJTTQFDJmDBMMZEFTJHOFEGPS('$*(SPVOE'BVMU
$JSDVJU*OUFSSVQUFS
BOE(BT*HOJUJPOBQQMJDBUJPOT"MM
SCRs junctions are glass-passivated to ensure long term
reliability and parametric stability.
Features
Main Features
Symbol
IT(RMS)
VDRM / VRRM
I(5
Value
Unit
0.8
A
400 to 800
V
5 to 200
μA
t3P)4DPNQMJBOU
t)JHIEWEUOPJTFJNNVOJUZ
t5ISVIPMFBOETVSGBDF
mount packages
t*NQSPWFEUVSOPGGUJNFUq)
< 25 μsec
t4VSHFDVSSFOU
capability > 10Amps
t4FOTJUJWFHBUFGPSEJSFDU
microprocessor interface
t#MPDLJOHWPMUBHF
( VDRM / VRRM )
capability - up to 800V
Schematic Symbol
A
Applications
5IF4Y9Y4xTFSJFTJTTQFDJmDBMMZEFTJHOFEGPS('$*
(SPVOE'BVMU$JSDVJU*OUFSSVQUFS
BOEHBTJHOJUJPO
applications.
G
K
Absolute Maximum Ratings
Symbol
IT(RMS)
IT(AV)
ITSM
Parameter
RMS on-state current (full sine wave)
I 2t
I2t Value for fusing
di/dt
Critical rate of rise of on-state current I( = 10mA
I(.
1FBL(BUF$VSSFOU
Unit
TO-92
TC = 55°C
0.8
A
SOT-89
TC = 60°C
0.8
A
SOT-223
TL = 60°C
0.8
A
TO-92
TC = 55°C
0.51
A
SOT-89
TC = 60°C
0.51
A
SOT-223
TO-92
SOT-89
SOT-223
tp = 10 ms
TL = 60°C
0.51
A
F= 50Hz
8
A
Average on-state current
Non repetitive surge peak on-state current
(Single cycle, TJ initial = 25°C)
Value
F= 60Hz
10
A
F = 50 Hz
0.32
A 2s
tp = 8.3 ms
TO-92
SOT-89
SOT-223
tp = 10 μs
F = 60 Hz
0.41
A2s
TJ = 125°C
50
A/μs
TJ = 125°C
1.0
A
W
P("7
Average gate power dissipation
—
TJ = 125°C
0.1
Tstg
Storage junction temperature range
—
—
-40 to 150
TJ
Operating junction temperature range
—
—
-40 to 125
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°C
SxX8xSx EV Series 0.8A Sensitive SCR
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Electrical Characteristics (TJ = 25°C, unless otherwise specified)
SxX8xxx
Symbol
Description
Test Conditions
Limit
%$(BUF5SJHHFS$VSSFOU
VD = 6V
RL = 100 Ω
%$(BUF5SJHHFS7PMUBHF
VD = 6V
RL = 100 Ω
MAX.
0.8
V
1FBL3FWFSTF(BUF7PMUBHF
I3( = 10μA
MIN.
5
V
Holding Current
R(, = 1 KΩ
MAX.
5
mA
Critical Rate-of-Rise of
Off-State Voltage
TJ = 125°C
VD = VDRM /VRRM
Exp. Waveform
R(, =1 kΩ
MIN.
75
V/μs
tq
Turn-Off Time
TJ = 25°C @ 600 V
R(, =1 kΩ
MAX.
30
25
25
μs
tgt
Turn-On Time
I(=10mA
PW = 15μsec
IT = 1.6A(pk)
MAX.
2.0
2.0
2.0
μs
I(5
V(5
V(3.
IH
(dv/dt)s
Unit
S1
S2
S
MIN.
0.5
1
15
μA
MAX.
5
50
200
μA
Static Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
VTM
IDRM
Description
Peak On-State Voltage
Off-State Current, Peak Repetitive
Test Conditions
Limit
Value
Unit
ITM = 1.6A (pk)
MAX.
1.70
V
TJ = 25°C @ VD = VDRM
R(, =1 kΩ
MAX.
3
μA
TJ = 125°C @ VD = VDRM
R(, =1 kΩ
MAX.
500
μA
Thermal Resistances
Symbol
Rth(j-c)
Rth(j-a)
1
Description
Junction to case (AC)
Junction to ambient
Test Conditions
IT = 0.8A (RMS)1
IT = 0.8A (RMS)1
Value
Unit
TO-92
75
°C/W
SOT-223
30
°C/W
SOT-89
50
°C/W
TO-92
150
°C/W
SOT-223
60
°C/W
SOT-89
90
°C/W
60Hz AC resistive load condition, 100% conduction.
SxX8xSx EV Series 0.8A Sensitive SCR
146
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Teccor® brand Thyristors
Silicon Controlled Rectifiers
Figure 2: Normalized DC Holding Current
vs. Junction Temperature
1.5
3.0
IH
4.0
1.0
Ratio of
IH (TJ = 25°C)
2.0
Ratio of
IGT
IGT (TJ = 25°C)
Figure 1: Normalized DC Gate Trigger Current For All
Quadrants vs. Junction Temperature
0.5
2.0
1.0
0.0
0.0
-40
-15
+25
+65
+105 +125
-55
-35
-15
Junction Temperature (TJ) - °C
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
+25
+45
+65
+85
+105 +125
Figure 4: Power Dissipation (Typical)
vs. RMS On-State Current
0.8
Average On-state Power Dissipation [PD(AV) ] - Watts
1.0
0.9
0.8
Gate Trigger Voltage (VGT) - V
+5
Junction Temperature (TJ) - °C
0.7
0.6
0.5
0.4
0.3
0.2
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95 +110 +125
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180o
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
Junction Temperature (TJ) - °C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RMS On-state Current [I T(RMS) ] - Amps
Figure 5: Maximum Allowable Case Temperature
vs. On-State Current
Maximum Allowable Case Temperature (TC ) - oC
130
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180o
CASE TEMPERATURE: Measured as
shown on dimensional drawings
120
110
SOT-223 & SOT-89
100
90
TO-92
80
70
60
50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RMS On-state Current [I T(RMS) ] - Amps
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Power Thyristor Databook
SxX8xSx EV Series 0.8A Sensitive SCR
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Peak Surge (Non-repetitive) On-State Current
(IT S M) – Amps .
Figure 6: Surge Peak On-State Current vs. Number of Cycles
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [IT(RMS)]: Max Rated Value at
Specific Case Temperature
20
10
9
8
7
6
5
Notes:
(BUFDPOUSPMNBZCFMPTUEVSJOHBOEJNNFEJBUFMZ
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
4
3
0. 8
2
AD
e vic
e
s
1
1
2
3
4
5 6 7 8 9 10
20
30
40
60 80 100
200
300 400 600
1000
Surge Current Duration - Full Cycle
Soldering Parameters
Reflow Condition
Pre Heat
1Co'SFFBTTFNCMZ
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
oTFDT
Average ramp up rate (Liquidus Temp)
(TL) to peak
5°C/second max
TS(max) to TL - Ramp-up Rate
5°C/second max
Reflow
- Temperature (TL) (Liquidus)
217°C
- Time (min to max) (ts)
oTFDPOET
Peak Temperature (TP)
260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)
oTFDPOET
Ramp-down Rate
5°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
280°C
SxX8xSx EV Series 0.8A Sensitive SCR
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Teccor® brand Thyristors
Silicon Controlled Rectifiers
Physical Specifications
Terminal Finish
Body
Lead Material
Reliability/Environmental Tests
Test
100% Matte Tin-plated.
UL recognized epoxy meeting flammability
classification 94V-0.
Specifications and Conditions
AC Blocking
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 110°C for 1008 hours
Temperature Cycling
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
Temperature/
Humidity
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
High Temp Storage
MIL-STD-750, M-1031,
1008 hours; 150°C
Low-Temp Storage
1008 hours; -40°C
Thermal Shock
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwelltime at each temperature; 10 sec (max)
transfer time between temperature
Autoclave
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
ANSI/J-STD-002, category 3, Test A
Lead Bend
MIL-STD-750, M-2036 Cond E
Copper Alloy
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
UPXBSEFYUFOEJOHUIFPQFSBUJOHMJGFPGUIFUIZSJTUPS(PPE
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Dimensions – TO-92
Inches
Millimeters
Dimensions
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Power Thyristor Databook
Min
Typ
Max
Min
Typ
Max
A
0.175
—
0.205
4.450
—
5.200
B
0.170
—
0.210
4.320
—
5.330
C
0.500
—
—
12.700
—
—
D
0.135
0.165
—
3.430
4.190
—
E
0.125
—
0.165
3.180
—
4.190
F
0.080
0.095
0.105
2.040
2.400
2.660
(
0.016
—
0.021
0.407
—
0.533
H
0.045
0.050
0.055
1.150
1.270
1.390
I
0.095
0.100
0.105
2.420
2.540
2.660
J
0.015
—
0.020
0.380
—
0.500
SxX8xSx EV Series 0.8A Sensitive SCR
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Dimensions – SOT-223
Inches
Millimeters
Dimensions
3.3
(0.130”)
1.5
(0.059”)
1.2
(0.047”)
6.4
(0.252”)
2.3
(0.091”)
(3x)
1.5
(0.059”)
4.6
(0.181”)
Dimensions in Millimeters (Inches)
Min
Typ
Max
Min
Typ
Max
A
0.248
0.256
0.264
6.30
6.50
6.70
B
0.130
0.138
0.146
3.30
3.50
3.70
C
—
—
0.071
—
—
1.80
D
0.001
—
0.004
0.02
—
0.10
E
0.114
0.118
0.124
2.90
3.00
3.15
F
0.024
0.027
0.034
0.60
0.70
0.85
(
—
0.090
—
—
2.30
—
H
—
0.181
—
—
4.60
—
I
0.264
0.276
0.287
6.70
7.00
7.30
J
0.009
0.010
0.014
0.24
0.26
0.35
K
10° MAX
Recommended Soldering Footprint
for SOT223
Dimensions – SOT-89
A
Tc Measuring Point
C
J
B
D
H
E
Inches
F
Pad Layout for SOT-89
(2.21)
.087
(1.12)
.044
(3.91)
.154
(1.19)
.047
(0.91)
.036
(1.63)
.064
(1.63)
.064
Dimensions in Millimeters (Inches)
SxX8xSx EV Series 0.8A Sensitive SCR
Millimeters
Dimension
G
150
Power Thyristor Databook
Min
Typ
Max
Min
Typ
Max
A
0.173
—
0.181
4.40
—
4.60
B
0.090
—
0.102
2.29
—
2.60
C
0.055
—
0.063
1.40
—
1.60
D
0.115
—
0.121
3.94
—
4.25
E
0.035
—
0.047
0.89
—
1.20
F
0.056
—
0.062
1.42
—
1.57
(
0.115
—
0.121
2.92
—
3.07
H
0.014
—
0.017
0.35
—
0.44
I
0.014
—
0.019
0.36
—
0.48
J
0.064
—
0.072
1.62
—
1.83
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Teccor® brand Thyristors
Silicon Controlled Rectifiers
Product Selector
Voltage
Part Number
Gate Sensitivity
Package
—
200 μA
TO-92
X
—
200 μA
TO-92
—
X
200 μA
TO-92
—
—
200 μA
SOT-223
—
X
—
200 μA
SOT-223
—
—
X
200 μA
SOT-223
S4X8BS
X
—
—
200 μA
SOT-89
S6X8BS
—
X
—
200 μA
SOT-89
S4X8ES1
X
—
—
5 μA
TO-92
S6X8ES1
—
X
—
5 μA
TO-92
S8X8ES1
—
—
X
5 μA
TO-92
S4X8TS1
X
—
—
5 μA
SOT-223
S6X8TS1
—
X
—
5 μA
SOT-223
S8X8TS1
—
—
X
5 μA
SOT-223
S4X8ES2
X
—
—
50 μA
TO-92
S6X8ES2
—
X
—
50 μA
TO-92
S8X8ES2
—
—
X
50 μA
TO-92
S4X8TS2
X
—
—
50 μA
SOT-223
S6X8TS2
—
X
—
50 μA
SOT-223
S8X8TS2
—
—
X
50 μA
SOT-223
400V
600V
800V
S4X8ES
X
—
S6X8ES
—
S8X8ES
—
S4X8TS
X
S6X8TS
S8X8TS
Packing Options
Part Number
Marking
Weight
Packing Mode
Base Quantity
SxX8ESy
SxX8ESy
0.170g
Bulk
2500
SxX8ESyAP
SxX8ESy
0.170g
Ammo Pack
2000
2000
SxX8ESyRP
SxX8ESy
0.170g
Tape & Reel
SxX8TSyRP
SxX8TSy
0.120g
Tape & Reel
1000
SxX8BSRP
xX8
0.053g
Tape & Reel
1000
Note: x = voltage, y = gate sensitivity
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Power Thyristor Databook
SxX8xSx EV Series 0.8A Sensitive SCR
Teccor® brand Thyristors
Silicon Controlled Rectifiers
TO-92 (3-lead) Reel Pack (RP) Radial Leaded
Meets all EIA-468-B 1994 Standards
0.02 (0.5)
0.236
(6.0)
1.6
(41.0)
0.708
(18.0)
0.098 (2.5) MAX
1.26
(32.0)
0.354
(9.0)
0.5
(12.7)
MT1 / Cathode
0.1 (2.54)
0.2 (5.08)
MT2 / Anode
Gate
0.157 DIA
(4.0)
14.17(360.0)
Flat up
1.97
(50.0)
Dimensions
are in inches
(and millimeters).
Direction of Feed
TO-92 (3-lead) Ammo Pack (AP) Radial Leaded
Meets all EIA-468-B 1994 Standards
0.236
(6.0)
1.62
(41.2)
0.708
(18.0)
0.02 (0.5)
0.098 (2.5) MAX
1.27
(32.2)
0.354
(9.0)
0.1 (2.54)
0.5
(12.7)
MT2 / Anode
0.2 (5.08)
0.157
(4.0) DIA
MT1 / Cathode
Gate
Flat down
ed
n of Fe
Directio
25 Devices per fold
1.85
(47.0)
12.2
(310.0)
1.85
(47.0)
Dimensions
are in inches
(and millimeters).
13.3
(338.0)
SxX8xSx EV Series 0.8A Sensitive SCR
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Teccor® brand Thyristors
Silicon Controlled Rectifiers
Tape & Reel Specifications for SOT-89
8 mm
4 mm
Ø1.5 mm
2 mm
ANODE
1.75 mm
5.5 mm
12 mm
GATE
ANODE
CATHODE
180 mm
13 mm Abor
Hole Diameter
13.4 mm
DIRECTION OF FEED
Tape & Reel Specifications for SOT-223
8 mm
4 mm
Ø1.5 mm
2 mm
ANODE
1.75 mm
12 mm
5.5 mm
GATE
ANODE
CATHODE
180 mm
13 mm Abor
Hole Diameter
13.4 mm
DIRECTION OF FEED
Part Numbering System
Part Marking System
DC
S xX8 x xx xx
SERIES
S: SCR
VOLTAGE
4: 400V
6: 600V
8: 800V
CURRENT
X8: 0.8A
Date Code
(2 Digits Min.)
Number = Year
Letter = Month
PACKING TYPE
Blank: Bulk Pack
RP: Reel Pack (TO-92)
Embossed Carrier Pack (SOT-223)
Embossed Carrier Pack (SOT-89)
AP: Ammo Pack (TO-92)
A
SENSITIVITY & TYPE
S1: 5μA Sensitive SCR
S2: 50μA Sensiive SCR
S: 200μA Sensitive SCR
K
©2008 Littelfuse
A
A
PACKAGE TYPE
E: TO-92
T: SOT-223
B: SOT-89
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K
G
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Power Thyristor Databook
SxX8xSx EV Series 0.8A Sensitive SCR