SiHG20N50C Datasheet

SiHG20N50C
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Halogen-free According to IEC 61249-2-21
Definition
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved Trr/Qrr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC
560
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
0.270
76
Qgs (nC)
21
Qgd (nC)
34
Configuration
Single
D
TO-247AC
G
S
S
D
G
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-247AC
SiHG20N50C-E3
SiHG20N50C-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)e
Pulsed Drain
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currenta
UNIT
V
20
ID
A
11
IDM
80
Linear Derating Factor
1.8
W/°C
mJ
Single Pulse Avalanche Energyb
EAS
361
Maximum Power Dissipation
PD
250
W
Peak Diode Recovery dV/dtc
dV/dt
5
V/ns
TJ, Tstg
- 55 to + 150
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A.
c. ISD ≤ 18 A, dI/dt ≤ 380 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Limited by maximum junction temperature.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
Maximum Junction-to-Ambient
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
0.5
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
MAX.
UNIT
°C/W
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG20N50C
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
700
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
VGS = ± 30 V
-
-
± 100
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
μA
-
0.225
0.270
Ω
gfs
VDS = 50 V, ID = 10 A
-
6.4
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
-
2451
2942
-
300
360
RDS(on)
VGS = 10 V
ID = 10 A
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 18 A, VDS = 400 V
-
26
32
-
65
76
-
21
-
-
29
-
-
80
-
pF
nC
VDD = 250 V, ID = 18 A,
Rg = 9.1 Ω
-
27
-
-
32
-
-
44
-
f = 1 MHz, open drain
-
1.1
-
-
-
20
-
-
80
-
-
1.5
-
503
-
ns
-
6.7
-
μC
-
30
-
A
ns
Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Current
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 18 A, VGS = 0 V
TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, V = 35 V
IRRM
V
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
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Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG20N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
50
40
30
TJ = 25 °C
TJ = 150 °C
ID, Drain Current (A)
60
ID, Drain Current (A)
100
VGS
Top
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
Bottom 5.0 V
20
TJ = 25 °C
1
0.1
7.0 V
10
0
0.01
0
6
12
18
24
30
5
6
7
8
9
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
40
ID, Drain Current (A)
10
VGS
Top
15 V
14 V
13 V
12 V
30
11 V
10 V
9.0 V
8.0 V
7.0 V
20
6.0 V
Bottom 5.0 V
TJ = 150 °C
7.0 V
10
0
0
6
12
18
24
30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
10
3
2.5
ID = 17 A
2
1.5
VGS = 10 V
1
0.5
0
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG20N50C
Vishay Siliconix
1000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
104
Operation in this area limited
by RDS(on)
ID, Drain Current (A)
Capacitance (pF)
105
Ciss
103
102
Coss
Crss
10
1
10
100
100
10
100 µs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
100
10
1000
1000
10 000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
20
ID = 17 A
VDS = 400 V
VDS = 250 V
VDS = 100 V
16
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
10 ms
12
8
15
10
5
4
0
0
0
30
60
90
120
QG, Total Gate Charge (nC)
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
ISD, Reverse Drain Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
VGS = 0 V
0.1
0.2
0.5
0.8
1.1
1.4
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
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Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG20N50C
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-2
10-3
0.1
1
Pulse Time (s)
Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-247)
RD
VDS
VDS
tp
VGS
D.U.T.
VDD
Rg
+
- VDD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 11a - Switching Time Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
VDS
90 %
QG
10 V
QGS
10 %
VGS
QGD
VG
td(on)
td(off) tf
tr
Fig. 11b - Switching Time Waveforms
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
Vary tp to obtain
required IAS
VDS
50 kΩ
D.U.T
Rg
+
-
IAS
12 V
0.2 µF
0.3 µF
V DD
+
D.U.T.
-
VDS
10 V
tp
0.01 Ω
VGS
3 mA
Fig. 12a - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG20N50C
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91382.
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Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-247AC (High Voltage)
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
4
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
(b1, b3, b5)
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
A1
2.21
2.59
A2
1.17
2.49
b
0.99
1.40
b1
0.99
1.35
b2
1.53
2.39
b3
1.65
2.37
b4
2.42
3.43
b5
2.59
3.38
c
0.38
0.86
c1
0.38
0.76
D
19.71
20.82
D1
13.08
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
INCHES
MIN.
MAX.
0.180
0.209
0.087
0.102
0.046
0.098
0.039
0.055
0.039
0.053
0.060
0.094
0.065
0.093
0.095
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.820
0.515
-
DIM.
D2
E
E1
e
Øk
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
0.254
14.20
16.25
3.71
4.29
7.62 BSC
3.51
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.640
0.146
0.169
0.300 BSC
0.138
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
Document Number: 91360
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000