V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with 0.270 Ω RDS(on) at 10 V VGS AND TEC I INNOVAT O L OGY SiHP185N50C, SiHG20N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Combine Low On-Resistance, Low Gate Charge With the SiHP18N50C and SiHG20N50C, Vishay is extending its Gen 6.4 planar MOSFET technology to the TO-220 and TO-247 packages. Their low on-resistance, down to 270 mΩ maximum at VGS = 10 V, helps save energy by reducing conduction losses. KEY BENEFITS • Combine 500 V ratings with low 0.270 Ω maximum on-resistnace at a 10 V gate drive –– Lowers conduction losses and saves energy • Low gate charge of 65 nC and agte charge times on-resistance of 17.75 ΩnC • Provide reliable operation –– 100 % avalanche testsed –– High single-pulse (EAS) and repetitive (EAR) avalanche energy capabilities • Peak current handling of 72 A pulsed and 18 A continuous • High Voltage Power MOSFETs - 500 V with 0.270 Ω RDS(on) at a 10 V VGS RESOURCES • Datasheet: SiHP18N50C - http://www.vishay.com/doc?91374 SiHG20N50C - http://www.vishay.com/doc?91382 • More featured products: http://www.vishay.com/ref/featuredmosfets/ • For technical questions contact [email protected] • Material categorization: For definitions of compliance please see http://www.vishay.com/doc?99912 One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0185-12xx THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . I INNOVAT 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Combine Low On-Resistance, Low Gate Charge EFFICIENCY COMPARISON 90 VAC / 395 VOUT Efficiency vs. Load IRFP460APBF SiHG20N50C 95.5 % 95.0 % 94.5 % Efficiency (%) MOSFETs - 500 V with 0.270 Ω RDS(on) at 10 V VGS AND TEC O L OGY SiHP185N50C, SiHG20N50C N HN POWER MOSFETs O 94.0 % 93.5 % 93.0 % 92.5 % 92.0 % 91.5 % 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Load (A) APPLICATIONS Power factor correction (PFC) and pulsewidth modulation (PWM) applications in a wide range of electronic systems, including LCD TVs, PCs, servers, telecom systems, and welding machines KEY SPECIFICATIONS PART NUMBER PACKAGE VDS (V) VGS (± V) IDS (A) 25 °C Max RDS(on) (mΩ) at VGS = 10 V Qg (nC) Ciss (pF) Crss (pF) SiHP18N50C-E3 TO-220 500 30 18 270 65 2451 26 SiHG20N50C-E3 TO-247 500 30 20 270 65 2451 26 PRODUCT SHEET 2/2 VMN-PT0185-12xx THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000