RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics (trr < 200ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <200ns This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Avalanche Energy Rated PACKAGE TO-218 • Planar Construction Applications • Switching Power Supplies • General Purpose Ordering Information RURU150120 • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V • Power Switching Circuits Formerly developmental type TA49073. PART NUMBER • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC BRAND RUR150120 Packaging SINGLE LEAD JEDEC STYLE TO-218 NOTE: When ordering, use the entire part number. ANODE Symbol CATHODE (FLANGE) K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RURU150120 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 1200 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) TC = 60oC 150 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM Square Wave, 20kHz 300 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 Phase, 60Hz 1500 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 375 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 50 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 oC 3-1 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 RURU150120 TC = 25oC, Unless Otherwise Specified Electrical Specifications SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 150A - - 2.1 V IF = 150A, TC = 150oC - - 1.9 V VR = 1200V - - 250 µA VR = 1200V, TC = 150oC - - 3.0 mA IF = 1A, dIF/dt = 200A/µs - - 200 ns IF = 150A, dIF/dt = 200A/µs - - 250 ns ta IF = 150A, dIF/dt = 200A/µs - 140 - ns tb IF = 150A, dIF/dt = 200A/µs - 80 - ns QRR IF = 150A, dIF/dt = 200A/µs - 2000 - nC VR = 10V, IF = 0A - 420 - pF 0.4 oC/W VF IR trr CJ RθJC - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 3000 500 175oC IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 1000 100 175oC 10 1 100oC 25oC 100 100oC 10 1 25oC 0.1 0.01 0 0.5 1 1.5 2 2.5 VF, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE 3-2 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RURU150120 Typical Performance Curves 500 TC = 25oC, dIF/dt = 200A/µs 200 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 250 (Continued) trr 150 ta 100 tb 50 0 1 10 50 400 300 trr 200 ta 100 tb 0 150 TC = 100oC, dIF/dt = 200A/µs 1 10 FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/µs 600 trr 400 ta tb 0 1 10 50 150 150 DC 125 100 SQ. WAVE 75 50 25 0 25 50 75 FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT CJ , JUNCTION CAPACITANCE (pF) 125 150 FIGURE 6. CURRENT DERATING CURVE 1500 1200 900 600 300 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 3-3 100 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) 0 150 FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT 800 200 50 IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A) 175 RURU150120 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1.6A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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