Si1480DH Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.200 at VGS = 10 V 2.6a 0.320 at VGS = 4.5 V 2.2 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 1.8 APPLICATIONS • • • • Load Switches DC/DC Converters Power Management LED Backlighting SOT-363 SC-70 (6-LEADS) D 1 D 6 D D 5 2 AU D XX YY Marking Code G Lot Traceability and Date Code G 3 4 S Part # Code S Top View N-Channel MOSFET Ordering Information: Si1480DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C)a TC = 70 °C TA = 25 °C 2.6 2.1b,c IDM 7 Avalanche Current IAS 2.4 EAS 0.29 Continuous Source-Drain Diode Current Maximum Power Dissipationa TC = 25 °C TA = 25 °C IS A 1.3b,c 2.8 TC = 70 °C 1.8 PD W 1.5b,c TA = 70 °C Operating Junction and Storage Temperature Range mJ 2.3 TC = 25 °C TA = 25 °C A 1.7b,c Pulsed Drain Current (t = 300 µs) L = 0.1 mH V a 2.2 ID TA = 70 °C Repetitive Avalanche Energy Unit 1 TJ, Tstg b,c - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter t 5 s Steady State Maximum Junction-to-Ambientb,d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum Unit RthJA RthJF 60 34 80 45 °C/W Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. Document Number: 67327 S12-2727-Rev. A, 12-Nov-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1480DH Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient ID = 250 µA VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductance gfs V 54 mV/°C - 4.1 3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 VDS = 5 V, VGS = 10 V 1.6 6 µA A VGS = 10 V, ID = 1.9 A 0.161 0.200 VGS = 4.5 V, ID = 1.5 A 0.230 0.320 VDS = 10 V, ID = 1.9 A 3.7 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 130 VDS = 50 V, VGS = 0 V, f = 1 MHz tr Turn-Off DelayTime td(off) Fall Time 3.3 5 1.8 2.7 VDS = 50 V, VGS = 4.5 V, ID = 2.7 A 0.7 Turn-On Delay Time VDD = 50 V, RL = 23 ID 2.2 A, VGEN = 4.5 V, Rg = 1 td(on) tr Turn-Off DelayTime td(off) Fall Time nC 1 f = 1 MHz tf Rise Time pF VDS = 50 V, VGS = 10 V, ID = 2.7 A td(on) Rise Time 54 10 VDD = 50 V, RL = 23 ID 2.2 A, VGEN = 10 V, Rg = 1 tf 1.3 6.5 13 15 30 45 90 11 20 13 25 5 10 11 20 10 20 10 20 ns ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Charge Qrr Body Diode Reverse Recovery Time trr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 2.3 7 IS = 2.2 A, VGS = 0 V IF = 2.2 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.9 1.2 V 20 40 nC 25 50 18 ns 7 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 67327 S12-2727-Rev. A, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1480DH Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 7 2.0 VGS = 10 V thru 6 V VGS = 5 V 6 ID - Drain Current (A) ID - Drain Current (A) 1.6 5 4 3 VGS = 4 V 2 1.2 TC = 25 °C 0.8 TC = 125 °C 0.4 1 TC = - 55 °C VGS = 3 V 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 1.0 VDS - Drain-to-Source Voltage (V) 3.0 4.0 5.0 Transfer Characteristics Curves vs. Temperature 0.500 200 0.400 160 Ciss 0.300 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics VGS = 4.5 V 0.200 VGS = 10 V 120 Coss 80 0.100 40 0.000 Crss 0 0 1 2 3 4 5 6 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.8 10 RDS(on) - On-Resistance (Normalized) VDS = 50 V VGS - Gate-to-Source Voltage (V) 2.0 VGS - Gate-to-Source Voltage (V) ID = 2.7 A 8 VDS = 25 V 6 VDS = 80 V 4 2 VGS = 10 V 1.6 ID = 1.9 A 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 0 0 1 2 3 4 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 67327 S12-2727-Rev. A, 12-Nov-12 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1480DH Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 0.60 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.50 TJ = 150 °C TJ = 25 °C 1 ID = 1.9 A 0.40 0.30 TJ = 125 °C 0.20 TJ = 25 °C 0.10 0.1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature 30 2.8 25 2.6 Power (W) VGS(th) (V) 20 2.4 ID = 250 μA 2.2 15 10 2.0 5 1.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 1 Time (s) Threshold Voltage Single Pulse Power 10 100 600 Limited by RDS(on)* 10 100 us 1 ID - Drain Current (A) 0.01 0.1 TJ - Temperature (°C) 1 ms 0.1 10 ms 100 ms 1s 10 s DC TA = 25 °C 0.01 BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 67327 S12-2727-Rev. A, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1480DH Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3.0 3.0 2.5 2.5 2.0 2.0 Power (W) ID - Drain Current (A) Package Limited 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0 0 25 50 75 100 TF - Foot Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Foot Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67327 S12-2727-Rev. A, 12-Nov-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1480DH Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67327. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 67327 S12-2727-Rev. A, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 AN815 Vishay Siliconix Single-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance INTRODUCTION EVALUATION BOARDS SINGLE SC70-6 The new single 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small to medium load applications where a miniaturized package is required. Devices in this package come in a range of on-resistance values, in n-channel and p-channel versions. This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the single-channel version. The evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as in Figure 2. The board allows examination from the outer pins to 6-pin DIP connections, permitting test sockets to be used in evaluation testing. See Figure 3. 52 (mil) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the basic pad layout and dimensions. These pad patterns are sufficient for the low to medium power applications for which this package is intended. Increasing the drain pad pattern yields a reduction in thermal resistance and is a preferred footprint. The availability of four drain leads rather than the traditional single drain lead allows a better thermal path from the package to the PCB and external environment. 96 (mil) 6 5 4 1 2 3 71 (mil) 26 (mil) 13 (mil) 0, 0 (mil) 18 (mil) 26 (mil) PIN-OUT 16 (mil) Figure 1 shows the pin-out description and Pin 1 identification.The pin-out of this device allows the use of four pins as drain leads, which helps to reduce on-resistance and junction-to-ambient thermal resistance. SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D G 3 4 S FIGURE 2. SC-70 (6 leads) Single The thermal performance of the single 6-pin SC-70 has been measured on the EVB, comparing both the copper and Alloy 42 leadframes. This test was first conducted on the traditional Alloy 42 leadframe and was then repeated using the 1-inch2 PCB with dual-side copper coating. Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) Document Number: 71334 12-Dec-03 www.vishay.com 1 AN815 Vishay Siliconix Front of Board SC70-6 Back of Board SC70-6 vishay.com FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (Package Performance) COOPER LEADFRAME Room Ambient 25 _C The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. A helpful way of presenting the thermal performance of the 6-Pin SC-70 copper leadframe device is to compare it to the traditional Alloy 42 version. Thermal performance for the 6-pin SC-70 measured as junction-to-foot thermal resistance, where the “foot” is the drain lead of the device at the bottom where it meets the PCB. The junction-to-foot thermal resistance is typically 40_C/W in the copper leadframe and 163_C/W in the Alloy 42 leadframe — a four-fold improvement. This improved performance is obtained by the enhanced thermal conductivity of copper over Alloy 42. The typical RqJA for the single 6-pin SC-70 with copper leadframe is 103_C/W steady-state, compared with 212_C/W for the Alloy 42 version. The figures are based on the 1-inch2 FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the two different leadframes at varying ambient temperatures. ALLOY 42 LEADFRAME PD + Rq JA Elevated Ambient 60 _C PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 212 CńW o o P D + 150 Co* 25 C 212 CńW P D + 590 mW P D + 425 mW www.vishay.com 2 T J(max) * T A T J(max) * T A Rq JA PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 124 CńW o o P D + 150 Co* 60 C 124 CńW P D + 1.01 W P D + 726 mW As can be seen from the calculations above, the compact 6-pin SC-70 copper leadframe LITTLE FOOT power MOSFET can handle up to 1 W under the stated conditions. Testing To further aid comparison of copper and Alloy 42 leadframes, Figure 5 illustrates single-channel 6-pin SC-70 thermal performance on two different board sizes and two different pad patterns. The measured steady-state values of RqJA for the two leadframes are as follows: LITTLE FOOT 6-PIN SC-70 Power Dissipation Room Ambient 25 _C PD + Elevated Ambient 60 _C 1) Minimum recommended pad pattern on the EVB board V (see Figure 3. 1-inch2 2) Industry standard PCB with maximum copper both sides. Alloy 42 Copper 329.7_C/W 208.5_C/W 211.8_C/W 103.5_C/W The results indicate that designers can reduce thermal resistance (RqJA) by 36% simply by using the copper leadframe device rather than the Alloy 42 version. In this example, a 121_C/W reduction was achieved without an increase in board area. If increasing in board size is feasible, a further 105_C/W reduction could be obtained by utilizing a 1-inch2 square PCB area. The copper leadframe versions have the following suffix: Single: Si14xxEDH Dual: Si19xxEDH Complementary: Si15xxEDH Document Number: 71334 12-Dec-03 AN815 400 250 320 200 240 Thermal Resistance (C/W) Thermal Resistance (C/W) Vishay Siliconix Alloy 42 160 Copper 80 150 Alloy 42 100 50 Copper 0 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 10-5 Leadframe Comparison on EVB Document Number: 71334 12-Dec-03 10-3 10-2 10-1 1 10 100 1000 Time (Secs) Time (Secs) FIGURE 4. 10-4 FIGURE 5. Leadframe Comparison on Alloy 42 1-inch2 PCB www.vishay.com 3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000